Andrea Cordaro

The recent emergence of thin-film lithium niobate (TFLN) has extended the landscape of integrated photonics. This has been enabled by the commercialization of TFLN wafers and advanced nanofabrication of TFLN such as high-quality dry etching. However, fabrication imperfections still limit the propagation loss to a few dB/m, restricting the impact of this platform. Here, we demonstrate TFLN microresonators with a record-high intrinsic quality (Q) factor of twenty-nine million, corresponding to an ultra-low propagation loss of 1.3 dB/m. We present spectral analysis and the statistical distribution of Q factors across different resonator geometries. Our work pushes the fabrication limits of TFLN photonics to achieve a Q factor within 1 order of magnitude of the material limit.

A scalable selective-area electrochemical method is reported for the fabrication of interconnected metal nanostructures. In this work, the fabrication of silver nanowire grids for the application of transparent electrodes is explored. The presented method is based on a through-the-mask electrodeposition method, where the mask is made by using substrate conformal imprint lithography. We find that the nucleation density of the silver nanoparticles is the key parameter for successful homogeneous void-free filling of the template. We independently controlled the density of the silver nuclei and their growth by using a double potential pulse. The silver nanowire grids show high transmission (95.9%) and low sheet resistance (as low as 3.7 Ω/sq), resulting in a superior figure of merit (FoM). Due to the bottom-up nature of this technique, arbitrarily high aspect ratio nanowires can be achieved, therefore decreasing the sheet resistance without affecting transmittance and carrier collection. The presented method can be generalized to the large-area nanofabrication of any well-defined nanostructure design of any metal transparent electrode for multiple applications.

In this work, we present the fabrication and analysis of a wafer‐bonded GaInP/GaInAsP//Si triple‐junction solar cell with 36.1% conversion efficiency under AM1.5g spectral illumination. The new cell design presents an improvement over previous III‐V//Si triple‐junction cells by the implementation of a rear‐heterojunction for the middle cell. Furthermore, an advanced metallodielectric rear‐side grating was used for light trapping enhancement in the silicon bottom cell that increased the silicon subcell current by 1.4 mA/cm². The external radiative efficiency was quantified to be 1.5 times higher compared to a reference device with a GaInAsP homojunction middle cell. A luminescent coupling factor of 0.46 between the middle and bottom subcell was determined. The share of recombination in the space‐charge region was experimentally shown to be insignificant as intended by the rear‐heterojunction design. Overall, the open‐circuit voltage of the middle cell increased by 61 mV compared to the previous generation. Given the established long‐term stability of III‐V and silicon‐based solar cells, these results are promising steps towards the future employment of III‐V/Si tandem solar cells.

Multijunction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting a broader range of the solar spectrum more efficiently. However, Si-based multijunction architectures are hindered by incomplete harvesting in the near-infrared (near-IR) spectral range as Si subcells have weak absorption close to the band gap. Here, we introduce an integrated near-field/far-field light trapping scheme to enhance the efficiency of silicon-based multijunction solar cells in the near-IR range. To achieve this, we design a nanopatterned diffractive silver back-reflector featuring a scattering matrix that optimizes trapping of multiply scattered light into a range of diffraction angles. We minimize reflection to the zeroth order and parasitic plasmonic absorption in silver by engineering destructive interference in the patterned back-contact. Numerical and experimental assessment of the optimal design on the performance of single-junction Si TOPCon solar cells highlights an improved external quantum efficiency over a planar back-reflector (+1.52 mA/cm²). Nanopatterned metagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminal triple-junction solar cells via substrate conformal imprint lithography and characterized optically and electronically, demonstrating a power conversion efficiency improvement of +0.9%_abs over the planar reference. Overall, our work demonstrates the potential of nanophotonic light trapping for enhancing the efficiency of silicon-based multijunction solar cells, paving the way for more efficient and sustainable solar energy technologies.

A scalable selective area electrochemical method is reported for the fabrication of interconnected metal nanostructures. In this work, the fabrication of silver nanowire grids for the application of transparent electrodes is explored. The presented method is based on a through-the-mask electrodeposition method, where the mask is made using substrate conformal imprint lithography. We find that the nucleation density of the silver nanoparticles is the key parameter for the successful homogenous void-free filling of the template. We independently control the density of the silver nuclei and their growth by using a double potential pulse. The silver nanowire grids show high transmission (95.9%) and low sheet resistance (as low as 3.7 Ohm/sq), resulting into a superior Figure of Merit (FoM). Due to the bottom-up nature of this technique, arbitrarily high aspect ratio nanowires can be achieved and therefore the relationship of decreasing transmission with decreasing sheet resistance is broken. The presented method can be generalized to the large-area nanofabrication of any well-defined nanostructure design of any metal transparent electrode for multiple applications.

Multi-junction solar cells provide a path to overcome the efficiency limits of standard silicon solar cells by harvesting more efficiently a broader range of the solar spectrum. However, Si-based multi-junction architectures are hindered by incomplete harvesting in the near-infrared (near-IR) spectral range, as Si sub-cells have weak absorption close to the band gap. Here, we introduce an integrated near-field/far-field light trapping scheme to enhance the efficiency of silicon-based multi-junction solar cells in the near-IR range. To achieve this, we design a nanopatterned diffractive silver back-reflector featuring a scattering matrix that optimizes trapping of multiply-scattered light into a range of diffraction angles. We minimize reflection to the 0th-order and parasitic plasmonic absorption in the silver by engineering destructive interference in the patterned back contact. Numerical and experimental assessment of the optimal design on the performance of single-junction Si TOPCon solar cells highlights an improved external quantum efficiency (EQE) over a planar back-reflector (+1.52 mA/cm2). Nanopatterned metagrating back-reflectors are fabricated on GaInP/GaInAsP//Si two-terminal triple-junction solar cells via Substrate Conformal Imprint Lithography (SCIL) and characterized optically and electronically, demonstrating a power conversion efficiency improvement of +0.9%abs over the planar reference. Overall, our work demonstrates the potential of nanophotonic light trapping for enhancing the efficiency of silicon-based multi-junction solar cells, paving the way for more efficient and sustainable solar energy technologies.

The optical properties of periodic metallic nanoparticle lattices have found many exciting applications. Indium is an emerging plasmonic material that offers to extend the plasmonic applications given by gold and silver from the visible to the ultraviolet spectral range, with applications in imaging, sensing, and lasing. Due to the high vapor pressure/low melting temperature of indium, nanofabrication of ordered metallic nanoparticles is nontrivial. In this work, we show the potential of selective area electrochemical deposition to generate large-area lattices of In pillars for plasmonic applications. We study the optical response of the In lattices by means of angle-dependent extinction measurements demonstrating strong plasmonic surface lattice resonances and a good agreement with numerical simulations. The results open avenues toward high-quality lattices of plasmonic indium nanoparticles and can be extended to other promising plasmonic materials that can be electrochemically grown.

Crystalline Si solar cells based on thin wafers, with thicknesses in the range of 5–50 μm, can find applications in a wide range of markets where flexibility and bendability are important. For these cells, avoiding standard macroscopic texture is desirable to increase structural integrity. Herein, a nanopatterned SiN _x antireflection (AR) coating that consists of 174 nm‐radius and 118 nm‐high SiN _x nanodisks arranged in a square lattice on a thin (59 nm) SiN _x layer is introduced. This geometry combines Fabry–Pérot AR and forward scattering by a resonant Mie mode to achieve high transmission into the Si absorber over a broad spectral band. The nanostructured coating is patterned on a commercial interdigitated‐back‐contact (IBC) Si solar cell, experimentally demonstrating a short‐circuit current density (J _sc) of 36.9 mA cm⁻², 2.3 mA cm⁻² higher than for a single‐layer AR coated cell, and an efficiency of 16.3% at a thickness of around 100 μm. It is shown that light incoupling efficiency is comparable to that of pyramidal texturing, while the absorption in the infrared is lower, due to less‐effective light trapping. Overall, nanopatterned SiN _x broadband AR coatings are an appealing option for improving light management in ultrathin solar cells and other optoelectronic devices.