Yang Liu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
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Research Interests
Yang Liu has a total of 338 co-authors. Here are the top co-authors by number of shared publications:
Yi Wu
School of Physics Zhejiang University 310058 Hangzhou China
22 shared publicationsChao Cao
Zhejiang University
19 shared publications- Hui Qiu Yuan
Zhejiang University
18 shared publications Peng Li
Center for Correlated Matter and Department of Physics, Zhejiang University, Hangzhou 310058, China
18 shared publicationsYuan Fang
Shanghai Institute of Optics and Fine Mechanics
16 shared publications- Chao Cao
Zhejiang University
13 shared publications
Latest Publications
- 15 October 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (23)
Nonthermal nonlinear many-body excitonic dynamics in high-purity silicon
- 15 October 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (23)
Nonthermal nonlinear many-body excitonic dynamics in high-purity silicon
- 10 September 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (14) , 144412
Distinguishing apparent and hidden altermagnetism via uniaxial strain in CsV 2 Te 2 O
Hidden altermagnetism was theoretically proposed and then experimentally confirmed in the metal ${\mathrm{Cs}}_{1\ensuremath{-}\ensuremath{\delta}}{\mathrm{V}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$, which exhibits two nearly degenerate ground-state magnetic configurations ($C$ type and $G$ type), corresponding, respectively, to apparent and hidden altermagnetism. Here, we propose that in-plane uniaxial strain can be utilized to distinguish apparent and hidden altermagnetism. Under uniaxial strain, apparent altermagnetism exhibits an obvious net magnetic moment, whereas hidden altermagnetism maintains zero net magnetic moment. The magnetic moment induced by uniaxial strain here, namely, the piezomagnetic effect, differs from that in semiconductors, where strain must be applied first, followed by carrier doping, to generate net magnetism. First-principles calculations verify our proposal, revealing that the magnetic moment induced by uniaxial strain in $C$-type antiferromagnetic ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ is much larger than that in previously studied altermagnetic semiconductors. Furthermore, we also investigate the electronic state transitions of semiconductors featuring a crystal structure analogous to ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ under uniaxial strain and verify our proposal for specific materials via first-principles calculations. Upon application of uniaxial strain, $C$-type ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ exhibits the anomalous Hall effect via the piezomagnetic effect, while $G$-type ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ shows no anomalous Hall response. Our work provides an experimentally feasible strategy to distinguish apparent and hidden altermagnetism in the ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ family.- 10 September 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (14) , 144412
Distinguishing apparent and hidden altermagnetism via uniaxial strain in CsV 2 Te 2 O
Hidden altermagnetism was theoretically proposed and then experimentally confirmed in the metal ${\mathrm{Cs}}_{1\ensuremath{-}\ensuremath{\delta}}{\mathrm{V}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$, which exhibits two nearly degenerate ground-state magnetic configurations ($C$ type and $G$ type), corresponding, respectively, to apparent and hidden altermagnetism. Here, we propose that in-plane uniaxial strain can be utilized to distinguish apparent and hidden altermagnetism. Under uniaxial strain, apparent altermagnetism exhibits an obvious net magnetic moment, whereas hidden altermagnetism maintains zero net magnetic moment. The magnetic moment induced by uniaxial strain here, namely, the piezomagnetic effect, differs from that in semiconductors, where strain must be applied first, followed by carrier doping, to generate net magnetism. First-principles calculations verify our proposal, revealing that the magnetic moment induced by uniaxial strain in $C$-type antiferromagnetic ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ is much larger than that in previously studied altermagnetic semiconductors. Furthermore, we also investigate the electronic state transitions of semiconductors featuring a crystal structure analogous to ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ under uniaxial strain and verify our proposal for specific materials via first-principles calculations. Upon application of uniaxial strain, $C$-type ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ exhibits the anomalous Hall effect via the piezomagnetic effect, while $G$-type ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ shows no anomalous Hall response. Our work provides an experimentally feasible strategy to distinguish apparent and hidden altermagnetism in the ${\mathrm{CsV}}_{2}{\mathrm{Te}}_{2}\mathrm{O}$ family.- 26 May 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (20)
Tracking the local order parameter through the Hubbard exciton decoherence time in the Mott-Hubbard insulator LaVO 3
- 26 May 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (20)
Tracking the local order parameter through the Hubbard exciton decoherence time in the Mott-Hubbard insulator LaVO 3
- Open Access
- 10 March 2026
- Published by American Physical Society (APS) in Physical Review X
- Vol. 16 (1)
Dimensionality Tuning of Heavy-Fermion States in Ultrathin CeSi 2 Films
Dimensionality tuning is an important method to modify the electronic states of quantum materials. However, the mechanism of such tuning in heavy fermion systems and its connection with transport properties remain largely unexplored. Here by combining molecular beam epitaxy, angle-resolved photoemission spectroscopy and transport measurements, we study the electronic states of the heavy-fermion compound CeSi 2 as a function of film thickness. In three-dimensional thick films, our measurements reveal a dispersive Kondo peak at the Fermi level ( E F ) and satellite peaks originating from crystal electric field (CEF) excitations, characteristic of heavy-fermion systems. For two-dimensional ultrathin films, the CEF satellites are largely suppressed while the ground-state Kondo peak at E F remains strong, although it develops at lower temperatures. Simultaneously, the maximum temperature T max of the magnetic resistivity, ρ m ( T ) , changes from ≈ 100 K in thick films to ≈ 35 K in ultrathin films. This can be attributed to the dimensionality-driven reduction of CEF excitations during the Kondo process, in good agreement with spectroscopic results. Our work provides direct insight to understand the quantum confinement effects on strongly correlated 4 f -electron systems and opens up new opportunities to explore emergent phenomena in two-dimensional heavy-fermion materials.
- 10 March 2026
- Published by American Physical Society (APS) in Physical Review X
- Vol. 16 (1)
Open AccessDimensionality Tuning of Heavy-Fermion States in Ultrathin CeSi 2 Films
Dimensionality tuning is an important method to modify the electronic states of quantum materials. However, the mechanism of such tuning in heavy fermion systems and its connection with transport properties remain largely unexplored. Here by combining molecular beam epitaxy, angle-resolved photoemission spectroscopy and transport measurements, we study the electronic states of the heavy-fermion compound CeSi 2 as a function of film thickness. In three-dimensional thick films, our measurements reveal a dispersive Kondo peak at the Fermi level ( E F ) and satellite peaks originating from crystal electric field (CEF) excitations, characteristic of heavy-fermion systems. For two-dimensional ultrathin films, the CEF satellites are largely suppressed while the ground-state Kondo peak at E F remains strong, although it develops at lower temperatures. Simultaneously, the maximum temperature T max of the magnetic resistivity, ρ m ( T ) , changes from ≈ 100 K in thick films to ≈ 35 K in ultrathin films. This can be attributed to the dimensionality-driven reduction of CEF excitations during the Kondo process, in good agreement with spectroscopic results. Our work provides direct insight to understand the quantum confinement effects on strongly correlated 4 f -electron systems and opens up new opportunities to explore emergent phenomena in two-dimensional heavy-fermion materials.
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (5)
Infinite magnetoresistance and vortex coupling in the Pb / Bi 2 Sr 2 CaCu 2 O 8 + δ heterostructure
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (5)
Infinite magnetoresistance and vortex coupling in the Pb / Bi 2 Sr 2 CaCu 2 O 8 + δ heterostructure
- Open Access
Infinite Magnetoresistance and Vortex Coupling in the Pb/BSCCO Heterostructure
Combining superconductivity with spintronics provides exciting opportunities to realize low-dissipation quantum devices. Here we report the synthesis, characterization and magnetotransport measurements of the Pb/Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) superconducting heterostructures, where an insulating PbO$_{x}$ layer spontaneously forms at the interface. Non-volatile switching between superconducting (logical "0") and normal ("1") states in Pb films by an external field, i.e., infinite magnetoresistance (IMR), can be realized and are attributed to the strong trapping and pinning of vortices in BSCCO. Furthermore, butterfly-shaped hysteresis loops in magnetoresistance, pronounced resistance dips/jumps and thermal reset to superconducting states can be observed and are direct manifestations of the peculiar vortex dynamics in BSCCO and vortex coupling across the Pb/BSCCO interface. Our work demonstrates a simple and effective way to realize IMR through superconducting vortices and opens up new opportunities to study the vortex interactions across the superconducting interfaces.
Open AccessInfinite Magnetoresistance and Vortex Coupling in the Pb/BSCCO Heterostructure
Combining superconductivity with spintronics provides exciting opportunities to realize low-dissipation quantum devices. Here we report the synthesis, characterization and magnetotransport measurements of the Pb/Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) superconducting heterostructures, where an insulating PbO$_{x}$ layer spontaneously forms at the interface. Non-volatile switching between superconducting (logical "0") and normal ("1") states in Pb films by an external field, i.e., infinite magnetoresistance (IMR), can be realized and are attributed to the strong trapping and pinning of vortices in BSCCO. Furthermore, butterfly-shaped hysteresis loops in magnetoresistance, pronounced resistance dips/jumps and thermal reset to superconducting states can be observed and are direct manifestations of the peculiar vortex dynamics in BSCCO and vortex coupling across the Pb/BSCCO interface. Our work demonstrates a simple and effective way to realize IMR through superconducting vortices and opens up new opportunities to study the vortex interactions across the superconducting interfaces.
- 4 December 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (22)
Multigap nodeless superconductivity in the Dirac semimetal PdTe
- 4 December 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (22)
Multigap nodeless superconductivity in the Dirac semimetal PdTe
- Open Access
Orbital-selective charge transfer drives two-step negative thermal expansion structural transitions in PbTa2Se4
The negative thermal expansion (NTE) effect has been found generally combined with structural phase transitions. However, the charge and orbital freedoms of the NTE has not been well studied. This study employs angle-resolved photoemission spectroscopy and first-principles calculations to elucidate the charge and orbital kinetics of the anomalous two-step negative thermal expansion structural phase transitions in PbTa2Se4. As the temperature decreases, each transition undergoes a similar block-layer sliding, although the charge transfer behaviors differ significantly. During the first transition, charge is mainly transferred from the Pb 6pz orbital to an M-shaped band below the Fermi level, barely altering the Fermi surface. In contrast, the second transition involves modifications to both the Fermi surface and charge-transfer orbitals, with charge selectively transferred from Pb 6px/py orbitals to Ta 5dz2 orbitals and a decrease of the Fermi pockets formed by Pb 6px/py orbitals. Furthermore, a small pressure can easily tune the base structure phase among the three phases and the corresponding superconductivity. Therefore, our findings reveal that the orbital-selective charge transfer drives the unusual structure transition in PbTa2Se4, offering new insights into the NTE mechanisms and providing a unique window to study the pressure-tuned superconductivity in this metal-intercalated transition chalcogenides.
Open AccessOrbital-selective charge transfer drives two-step negative thermal expansion structural transitions in PbTa2Se4
The negative thermal expansion (NTE) effect has been found generally combined with structural phase transitions. However, the charge and orbital freedoms of the NTE has not been well studied. This study employs angle-resolved photoemission spectroscopy and first-principles calculations to elucidate the charge and orbital kinetics of the anomalous two-step negative thermal expansion structural phase transitions in PbTa2Se4. As the temperature decreases, each transition undergoes a similar block-layer sliding, although the charge transfer behaviors differ significantly. During the first transition, charge is mainly transferred from the Pb 6pz orbital to an M-shaped band below the Fermi level, barely altering the Fermi surface. In contrast, the second transition involves modifications to both the Fermi surface and charge-transfer orbitals, with charge selectively transferred from Pb 6px/py orbitals to Ta 5dz2 orbitals and a decrease of the Fermi pockets formed by Pb 6px/py orbitals. Furthermore, a small pressure can easily tune the base structure phase among the three phases and the corresponding superconductivity. Therefore, our findings reveal that the orbital-selective charge transfer drives the unusual structure transition in PbTa2Se4, offering new insights into the NTE mechanisms and providing a unique window to study the pressure-tuned superconductivity in this metal-intercalated transition chalcogenides.
- Open AccessLarge ferromagnetic-like band splitting in ultrathin ${\mathrm{SmC}}_{6}$ filmsTwo-dimensional (2D) magnetic materials provide a unique platform for exploring quantum phases from magnetic order in reduced dimensions. While there have been extensive studies on 2D magnetic materials based on 3$d$ electrons, experimental studies on 4$f$-electron counterparts are far fewer, particularly on their electronic structure. In this study, we report the successful synthesis of ultrathin ${\mathrm{SmC}}_{6}$ films using molecular beam epitaxy. Utilizing in situ angle-resolved photoemission spectroscopy (ARPES), we uncover a large band splitting in the valence bands, which we attribute to the ferromagnetic order driven by exchange couplings between Sm 4$f$ moments and conduction electrons. Despite the small magnetic moment of Sm, the observed splitting is comparable to those of Eu- and Gd-based systems with much larger local moments. Interestingly, the surface state also exhibits splitting with similar magnitude and can be eliminated by overannealing, while the valence bands with ferromagnetic-like splittings remain robust. Our work provides spectroscopic insight to understand the electronic origin of magnetic order in Sm-based compounds. Our study also offers a platform to study 2D magnetic materials based on 4$f$ electrons.Open AccessLarge ferromagnetic-like band splitting in ultrathin ${\mathrm{SmC}}_{6}$ filmsTwo-dimensional (2D) magnetic materials provide a unique platform for exploring quantum phases from magnetic order in reduced dimensions. While there have been extensive studies on 2D magnetic materials based on 3$d$ electrons, experimental studies on 4$f$-electron counterparts are far fewer, particularly on their electronic structure. In this study, we report the successful synthesis of ultrathin ${\mathrm{SmC}}_{6}$ films using molecular beam epitaxy. Utilizing in situ angle-resolved photoemission spectroscopy (ARPES), we uncover a large band splitting in the valence bands, which we attribute to the ferromagnetic order driven by exchange couplings between Sm 4$f$ moments and conduction electrons. Despite the small magnetic moment of Sm, the observed splitting is comparable to those of Eu- and Gd-based systems with much larger local moments. Interestingly, the surface state also exhibits splitting with similar magnitude and can be eliminated by overannealing, while the valence bands with ferromagnetic-like splittings remain robust. Our work provides spectroscopic insight to understand the electronic origin of magnetic order in Sm-based compounds. Our study also offers a platform to study 2D magnetic materials based on 4$f$ electrons.
- 14 July 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (3)
Large ferromagnetic-like band splitting in ultrathin films- 14 July 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (3)
Large ferromagnetic-like band splitting in ultrathin films