David Avellaneda Avellaneda
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
David Avellaneda Avellaneda has a total of 104 co-authors. Here are the top co-authors by number of shared publications:
- Sadasivan Shaji
Facultad de Ingeniería Mecánica y Eléctrica (FIME), Universidad Autónoma de Nuevo León, Av. Universidad s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo León 66455, Mexico
48 shared publications - Bindu Krishnan
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León. San Nicolás de los Garza, Nuevo León, 66455, Méxicohttps://ror.org/01fh86n78https://www.isni.org/isni
47 shared publications - Josue Amilcar Aguilar Martinez
Centro de Investigación e Innovación en Ingeniería Aeronáutica (CIIIA), Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Carretera a Salinas Victoria km. 2.3, Apodaca 66600, NL, Mexico
24 shared publications - Guadalupe Alan Castillo Rodríguez
Universidad Autónoma de Nuevo León , México image/svg+xml
17 shared publications - Maria Isabel Mendivil Palma
Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, San Nicolás de los Garza, Mexico
11 shared publications T.K. Das Roy
11 shared publications
Latest Publications
- 23 August 2026
- Published by Elsevier in Applied Surface Science
- Vol. 751
Laser irradiated Sb2S3 nanocolloids to thin films for self-driven photodetector applications
- 23 August 2026
- Published by Elsevier in Applied Surface Science
- Vol. 751
Laser irradiated Sb2S3 nanocolloids to thin films for self-driven photodetector applications
- Open Access
- 27 August 2025
- Published by Beilstein Institut in Beilstein Journal of Nanotechnology
- Vol. 16 (1) , 1428-1498
Laser processing in liquids: insights into nanocolloid generation and thin film integration for energy, photonic, and sensing applications
Nanoparticles in their pure colloidal form synthesized by laser-assisted processes such as laser ablation/fragmentation/irradiation/melting in liquids have attained much interest from the scientific community because of their specialties like facile synthesis, ultra-high purity, biocompatibility, colloidal stability in addition to other benefits like tunable size and morphology, crystalline phases, new compounds and alloys, and defect engineering. These nanocolloids are useful for fabricating different devices mainly with applications in optoelectronics, catalysis, sensors, photodetectors, surface-enhanced Raman spectroscopy (SERS) substrates, and solar cells. In this review article, we describe different methods of nanocolloidal synthesis using laser-assisted processes and corresponding thin film fabrication methods, particularly those utilized for device fabrication and characterization. The four sections start with an introduction to the common laser-assisted synthesis for nanocolloids and different methods of thin film fabrication using these nanocolloids followed by devices fabricated and characterized for applications including photovoltaics, photodetectors, catalysis, photocatalysis, electrochemical/photoelectrochemical sensors, hydrogen/oxygen evolution, SERS sensors and other types of devices reported so far. The last section explains the challenges and further scope of these devices from laser-generated nanocolloids.
- 27 August 2025
- Published by Beilstein Institut in Beilstein Journal of Nanotechnology
- Vol. 16 (1) , 1428-1498
Open AccessLaser processing in liquids: insights into nanocolloid generation and thin film integration for energy, photonic, and sensing applications
Nanoparticles in their pure colloidal form synthesized by laser-assisted processes such as laser ablation/fragmentation/irradiation/melting in liquids have attained much interest from the scientific community because of their specialties like facile synthesis, ultra-high purity, biocompatibility, colloidal stability in addition to other benefits like tunable size and morphology, crystalline phases, new compounds and alloys, and defect engineering. These nanocolloids are useful for fabricating different devices mainly with applications in optoelectronics, catalysis, sensors, photodetectors, surface-enhanced Raman spectroscopy (SERS) substrates, and solar cells. In this review article, we describe different methods of nanocolloidal synthesis using laser-assisted processes and corresponding thin film fabrication methods, particularly those utilized for device fabrication and characterization. The four sections start with an introduction to the common laser-assisted synthesis for nanocolloids and different methods of thin film fabrication using these nanocolloids followed by devices fabricated and characterized for applications including photovoltaics, photodetectors, catalysis, photocatalysis, electrochemical/photoelectrochemical sensors, hydrogen/oxygen evolution, SERS sensors and other types of devices reported so far. The last section explains the challenges and further scope of these devices from laser-generated nanocolloids.
- 14 June 2025
- Published by Elsevier in Applied Surface Science
- Vol. 709
IR laser induced defects and morphology in titania nanoparticles as black titania for environmental remediation
- 14 June 2025
- Published by Elsevier in Applied Surface Science
- Vol. 709
IR laser induced defects and morphology in titania nanoparticles as black titania for environmental remediation
- Open Access
Hybrid CuI@g-C3N4/MoS2 Thin Films for Energy Conversion Applications: A Photoelectrochemical Characterization
In this work, we report the fabrication of CuI@g-C3N4/MoS2 thin films by the thermal evaporation of Cu films and their conversion into hybrid films by a simple wet chemical method. Compared to pure CuI, CuI@g-C3N4/MoS2 shows enhanced absorption near the UV region, which improves its DC photoconductivity. The conductivity of the films is enhanced by the addition of g-C3N4/MoS2, which is distributed on the surface of the CuI film. The band gap of the films red-shifts upon adding g-C3N4/MoS2. We evaluate this material’s potential application as a photodetector and in photocatalysis by evaluating its photoelectrochemical properties using impedance spectroscopy measurements, cyclic voltammetry, and DC photoresponse measurements. We find that upon the addition of g-C3N4/MoS2, the conductivity of the films is increased, as evidenced by the time-dependent photo amperometry measurements. Also, a higher DC photoresponse is observed upon increasing the concentration of MoS2. This work marks the first time a hybrid CuI@g-C3N4/MoS2 film and its photoelectrochemical characteristics have ever been reported.
Open AccessHybrid CuI@g-C3N4/MoS2 Thin Films for Energy Conversion Applications: A Photoelectrochemical Characterization
In this work, we report the fabrication of CuI@g-C3N4/MoS2 thin films by the thermal evaporation of Cu films and their conversion into hybrid films by a simple wet chemical method. Compared to pure CuI, CuI@g-C3N4/MoS2 shows enhanced absorption near the UV region, which improves its DC photoconductivity. The conductivity of the films is enhanced by the addition of g-C3N4/MoS2, which is distributed on the surface of the CuI film. The band gap of the films red-shifts upon adding g-C3N4/MoS2. We evaluate this material’s potential application as a photodetector and in photocatalysis by evaluating its photoelectrochemical properties using impedance spectroscopy measurements, cyclic voltammetry, and DC photoresponse measurements. We find that upon the addition of g-C3N4/MoS2, the conductivity of the films is increased, as evidenced by the time-dependent photo amperometry measurements. Also, a higher DC photoresponse is observed upon increasing the concentration of MoS2. This work marks the first time a hybrid CuI@g-C3N4/MoS2 film and its photoelectrochemical characteristics have ever been reported.
- Open Access
- 13 January 2025
- Published by IOP Publishing in Nano Express
- Vol. 6 (1) , 015002
Chalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices
Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal halide perovskites have demonstrated groundbreaking photodetector performance due to their exceptional properties originating from their perovskite structure. However, toxicity and stability remain challenges for their large-scale applications. Inspired by the perovskite structure, intense investigation in search of highly stable, non-toxic and earth abundant materials with superior optoelectronic features has led to the discovery of chalcogenide perovskites (CPs). These are unconventional semiconductors with the formula ABX3, where A and B are cations and X is a chalcogen, which covers the compounds with the corner sharing perovskite structures of type II-IV- VI3 compounds (II = Ba, Sr, Ca, Eu; IV = Zr, Hf; VI = S, Se) and III1-III2-VI3 compounds (III1 and III2 = Lanthanides, Y, Sc; VI = S, Se). The increased coordination and ionicity in these compounds contribute to their excellent charge transport properties and exceptionally high optical absorption coefficient (> 105 cm−1). The present review encompasses theoretical analysis that provides electronic band structures and the orbital contributions that support the excellent optoelectronic properties. Furthermore, the challenging thin film deposition, characterizations, and their application in photodetection focusing on BaZrS3-which is the most studied one, are ascribed. Additionally, we suggest prospects that can bring out the true potential of these materials in photodetection and photovoltaics.
- 13 January 2025
- Published by IOP Publishing in Nano Express
- Vol. 6 (1) , 015002
Open AccessChalcogenide perovskites: enticing prospects across a wide range of compositions and optoelectronic properties for stable photodetector devices
Photodetectors are indispensable components of many modern light sensing and imaging devices, converting photon energy into processable electrical signal through absorption, carrier generation and extraction using semiconducting thin films with appropriate optoelectronic properties. Recently, metal halide perovskites have demonstrated groundbreaking photodetector performance due to their exceptional properties originating from their perovskite structure. However, toxicity and stability remain challenges for their large-scale applications. Inspired by the perovskite structure, intense investigation in search of highly stable, non-toxic and earth abundant materials with superior optoelectronic features has led to the discovery of chalcogenide perovskites (CPs). These are unconventional semiconductors with the formula ABX3, where A and B are cations and X is a chalcogen, which covers the compounds with the corner sharing perovskite structures of type II-IV- VI3 compounds (II = Ba, Sr, Ca, Eu; IV = Zr, Hf; VI = S, Se) and III1-III2-VI3 compounds (III1 and III2 = Lanthanides, Y, Sc; VI = S, Se). The increased coordination and ionicity in these compounds contribute to their excellent charge transport properties and exceptionally high optical absorption coefficient (> 105 cm−1). The present review encompasses theoretical analysis that provides electronic band structures and the orbital contributions that support the excellent optoelectronic properties. Furthermore, the challenging thin film deposition, characterizations, and their application in photodetection focusing on BaZrS3-which is the most studied one, are ascribed. Additionally, we suggest prospects that can bring out the true potential of these materials in photodetection and photovoltaics.
- 18 May 2024
- Published by Elsevier in Optical Materials
- Vol. 152
In situ grown Bi2S3 nanorods in Cs3Bi2I9 thin films as broadband self-driven photodetector with improved photostability
- 18 May 2024
- Published by Elsevier in Optical Materials
- Vol. 152
In situ grown Bi2S3 nanorods in Cs3Bi2I9 thin films as broadband self-driven photodetector with improved photostability
- Open Access
- 27 April 2024
- Published by EYA Academy
Películas delgadas semiconductoras
En entrevista para la UANL, el Dr. David Avellaneda Avellaneda describe la síntesis de semiconductores para el desarrollo de dispositivos fotovoltaicos y celdas solares como su principal línea de investigación dentro del Programa Doctoral en Ingeniería de
- 27 April 2024
- Published by EYA Academy
Open AccessPelículas delgadas semiconductoras
En entrevista para la UANL, el Dr. David Avellaneda Avellaneda describe la síntesis de semiconductores para el desarrollo de dispositivos fotovoltaicos y celdas solares como su principal línea de investigación dentro del Programa Doctoral en Ingeniería de