Fernando de Juan
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Fernando de Juan has a total of 154 co-authors. Here are the top co-authors by number of shared publications:
- Miguel Moreno Ugeda
Donostia International Physics Center (DIPC), San Sebastián, Spain
7 shared publications - Fèlix Casanova
CIC nanoGUNE BRTA
5 shared publications - Ivo Souza
Centro de Física de Materiales
5 shared publications - Luis E. Hueso
CIC nanoGUNE BRTA
5 shared publications - Marco Gobbi
Materials Physics Center CSIC-UPV/EHU
5 shared publications Sandra Sajan
Donostia International Physics Center
5 shared publications
Latest Publications
- 7 August 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (12) , 125104
Quantum geometry in the NbSe 2 family: Obstructed compact Wannier function and perturbation theory
Here, the authors reveal that monolayer NbSe${}_{2}$ and related transition metal dichalcogenides host obstructed atomic bands near the Fermi level. By constructing $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ six-, three-, and single-band Wannier models, they identify remarkably compact obstructed Wannier functions and an unusual dominance of next-nearest-neighbor hopping. These results provide a transparent low-energy framework for investigating how quantum geometry shapes charge order, electron--phonon coupling, and superconductivity in NbSe${}_{2}$.- 7 August 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 114 (12) , 125104
Quantum geometry in the NbSe 2 family: Obstructed compact Wannier function and perturbation theory
Here, the authors reveal that monolayer NbSe${}_{2}$ and related transition metal dichalcogenides host obstructed atomic bands near the Fermi level. By constructing $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ six-, three-, and single-band Wannier models, they identify remarkably compact obstructed Wannier functions and an unusual dominance of next-nearest-neighbor hopping. These results provide a transparent low-energy framework for investigating how quantum geometry shapes charge order, electron--phonon coupling, and superconductivity in NbSe${}_{2}$.- 31 March 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (5) , 686-691
Observation of an obstructed atomic band in a transition metal dichalcogenide
- 31 March 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (5) , 686-691
Observation of an obstructed atomic band in a transition metal dichalcogenide
- Open Access
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (5)
Optical probes of two-component pairing states in transition metal dichalcogenides
Signatures of unconventional superconductivity have been recently observed in certain transition metal dichalcogenides (TMDs), including 4 H b − TaS 2 and monolayer 2H- NbSe 2 . While the pairing channel remains unknown, it has been argued that spin fluctuations can stabilize pairing in the two-component E ′ channel, a p -wave spin-triplet state which could be consistent with some of the reported signatures. Exploiting the particular multiorbital character of the Fermi surface and the presence of Ising spin-orbit coupling, which enable finite optical conductivity in the clean limit, in this work we predict clear-cut optical signatures to detect and distinguish the chiral and nematic ground states of the E ′ pairing. We quantify how nematic E ′ states produce a diagonal anisotropy σ x x ≠ σ y y due to the broken threefold symmetry ( C 3 ), while chiral E ′ states yield a finite optical Hall conductivity σ x y H due to broken time-reversal symmetry, and find both signals could be detected in current experiments. For instance, for realistic gaps in the meV range, we predict a relative anisotropy Δ σ / σ ∼ 10 − 5 in the nematic states, and a polar Kerr rotation of θ K ∼ 10 − 5 rad in the chiral states. These symmetry fingerprints provide a practical route to distinguish nematic and chiral superconducting order in TMD superconductors.
- 26 February 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (5)
Open AccessOptical probes of two-component pairing states in transition metal dichalcogenides
Signatures of unconventional superconductivity have been recently observed in certain transition metal dichalcogenides (TMDs), including 4 H b − TaS 2 and monolayer 2H- NbSe 2 . While the pairing channel remains unknown, it has been argued that spin fluctuations can stabilize pairing in the two-component E ′ channel, a p -wave spin-triplet state which could be consistent with some of the reported signatures. Exploiting the particular multiorbital character of the Fermi surface and the presence of Ising spin-orbit coupling, which enable finite optical conductivity in the clean limit, in this work we predict clear-cut optical signatures to detect and distinguish the chiral and nematic ground states of the E ′ pairing. We quantify how nematic E ′ states produce a diagonal anisotropy σ x x ≠ σ y y due to the broken threefold symmetry ( C 3 ), while chiral E ′ states yield a finite optical Hall conductivity σ x y H due to broken time-reversal symmetry, and find both signals could be detected in current experiments. For instance, for realistic gaps in the meV range, we predict a relative anisotropy Δ σ / σ ∼ 10 − 5 in the nematic states, and a polar Kerr rotation of θ K ∼ 10 − 5 rad in the chiral states. These symmetry fingerprints provide a practical route to distinguish nematic and chiral superconducting order in TMD superconductors.
- Open Access
Topologically Protected Surface Altermagnetism on Antiferromagnets
Altermagnetism (AM) and its associated spin-transport phenomena are typically linked to spin-split electronic band structures in bulk materials. However, the crystal surface has a reduced symmetry with respect to the bulk, which can induce AM at the surface of conventional antiferromagnets (AFMs) $\unicode{x2013}$ a local effect which cannot be detected using bulk properties. In this work we define the symmetry conditions necessary for surface AM and show how it can be topologically protected, rendering it a robust effect. We provide a minimal model for one trivial and two topological examples of surface AM. We show that the spin spectral density, accessible by spin- and angle-resolved photoemission spectroscopy, can exhibit a $d$-wave-like altermagnetic character at the surface, even when the full band structure is completely spin degenerate. Our topological model describes the Dirac semimetal CuMnAs, which provides an existing realization of our theory. Our results identify crystal surfaces as a platform to realize robust, topology- and symmetry-driven unconventional magnetism beyond the bulk classification of magnetic materials.Open AccessTopologically Protected Surface Altermagnetism on Antiferromagnets
Altermagnetism (AM) and its associated spin-transport phenomena are typically linked to spin-split electronic band structures in bulk materials. However, the crystal surface has a reduced symmetry with respect to the bulk, which can induce AM at the surface of conventional antiferromagnets (AFMs) $\unicode{x2013}$ a local effect which cannot be detected using bulk properties. In this work we define the symmetry conditions necessary for surface AM and show how it can be topologically protected, rendering it a robust effect. We provide a minimal model for one trivial and two topological examples of surface AM. We show that the spin spectral density, accessible by spin- and angle-resolved photoemission spectroscopy, can exhibit a $d$-wave-like altermagnetic character at the surface, even when the full band structure is completely spin degenerate. Our topological model describes the Dirac semimetal CuMnAs, which provides an existing realization of our theory. Our results identify crystal surfaces as a platform to realize robust, topology- and symmetry-driven unconventional magnetism beyond the bulk classification of magnetic materials. - 28 January 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (3)
Magnetic injection photocurrents in valley-polarized states of twisted bilayer graphene
- 28 January 2026
- Published by American Physical Society (APS) in Physical Review B
- Vol. 113 (3)
Magnetic injection photocurrents in valley-polarized states of twisted bilayer graphene
- Open Access
- 6 January 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (2) , 816-822
Near-commensuration from Intertwined Charge Density Waves in Single-Layer TiSe 2
When the period of an incommensurate charge density wave (ICDW) approaches a multiple of a lattice vector, the energy gain from locking the period can drive a transition into an intermediate near-commensurate (NC) state made of locally commensurate regions separated by phase slips of a complex CDW. In TiSe2, a paradigmatic CDW system, incommensuration is believed to be induced by carrier doping, yet its putative NC state has never been imaged. Here we observe a striking NC state in ultraclean, doped monolayers of TiSe2, displaying an intricate network of unidirectional domain walls. Detailed analysis reveals that these are not phase slips of a complex CDW, but rather sign-changing Ising-type domain walls of two coupled real CDWs of different symmetry. In addition, these CDWs are coupled to an unexpected nematic modulation at the lattice Bragg peaks. TiSe2 is thus a rare example of a NC-CDW of two intertwined real modulations with nematicity.
- 6 January 2026
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 26 (2) , 816-822
Open AccessNear-commensuration from Intertwined Charge Density Waves in Single-Layer TiSe 2
When the period of an incommensurate charge density wave (ICDW) approaches a multiple of a lattice vector, the energy gain from locking the period can drive a transition into an intermediate near-commensurate (NC) state made of locally commensurate regions separated by phase slips of a complex CDW. In TiSe2, a paradigmatic CDW system, incommensuration is believed to be induced by carrier doping, yet its putative NC state has never been imaged. Here we observe a striking NC state in ultraclean, doped monolayers of TiSe2, displaying an intricate network of unidirectional domain walls. Detailed analysis reveals that these are not phase slips of a complex CDW, but rather sign-changing Ising-type domain walls of two coupled real CDWs of different symmetry. In addition, these CDWs are coupled to an unexpected nematic modulation at the lattice Bragg peaks. TiSe2 is thus a rare example of a NC-CDW of two intertwined real modulations with nematicity.
- Open Access
- 29 November 2025
- Published by Springer Nature in Communications Materials
- Vol. 6 (1) , 277
Direct to indirect band gap transition induced by approximately dark states
Recent work suggests that crystal structures with two sublattice pairs per primitive cell can host “dark states”, electronic states that barely interact with light due to destructive interference, which makes them invisible in photoemission. In practice, however, dark states are only approximately dark, arising from near but imperfect translation symmetries. Here, we demonstrate a practical consequence of this in the semiconductor (NbSe 4 ) 3 I: Although its band structure indicates an almost direct gap, the material behaves optically like an indirect-gap semiconductor. Angle-resolved photoemission spectroscopy uncovers weak spectral-weight bands folded from a larger Brillouin zone, reflecting approximate intra-unit-cell symmetry. These states form a small direct band gap consistent with transport data but exhibit very low optical transition probability. Instead, optical absorption is dominated by higher-energy transitions involving bands with stronger spectral weight, effectively enlarging the observed optical gap. Our results show that dark states are approximate phenomena with significant consequences for optoelectronic properties.
- 29 November 2025
- Published by Springer Nature in Communications Materials
- Vol. 6 (1) , 277
Open AccessDirect to indirect band gap transition induced by approximately dark states
Recent work suggests that crystal structures with two sublattice pairs per primitive cell can host “dark states”, electronic states that barely interact with light due to destructive interference, which makes them invisible in photoemission. In practice, however, dark states are only approximately dark, arising from near but imperfect translation symmetries. Here, we demonstrate a practical consequence of this in the semiconductor (NbSe 4 ) 3 I: Although its band structure indicates an almost direct gap, the material behaves optically like an indirect-gap semiconductor. Angle-resolved photoemission spectroscopy uncovers weak spectral-weight bands folded from a larger Brillouin zone, reflecting approximate intra-unit-cell symmetry. These states form a small direct band gap consistent with transport data but exhibit very low optical transition probability. Instead, optical absorption is dominated by higher-energy transitions involving bands with stronger spectral weight, effectively enlarging the observed optical gap. Our results show that dark states are approximate phenomena with significant consequences for optoelectronic properties.
- 14 October 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (16)
Doping-induced nematic and stripe orders within the charge density wave state of- 14 October 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (16)
Doping-induced nematic and stripe orders within the charge density wave state of- 25 September 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 135 (13) , 136102
In-Plane Anisotropy of Charge Density Wave Fluctuations inWe report measurements of anisotropic triple-q charge density wave (CDW) fluctuations in the transition metal dichalcogenide 1T-TiSe_{2} over a large volume of reciprocal space with x-ray diffuse scattering. Above the transition temperature, T_{CDW}, the in-plane diffuse scattering is marked by ellipses which reveal that the in-plane fluctuations are anisotropic. In addition, the out-of-plane diffuse scattering is characterized by rodlike structures which indicate that the CDW fluctuations in neighboring layers are largely decoupled. Our analysis of the diffuse scattering line shapes and orientations suggests that the three charge density wave components contain independent phase fluctuations with a hierarchy of length scales, leading to intricate fluctuation patterns that go beyond the conventional 2D-to-3D crossover picture.
- 25 September 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 135 (13) , 136102
In-Plane Anisotropy of Charge Density Wave Fluctuations inWe report measurements of anisotropic triple-q charge density wave (CDW) fluctuations in the transition metal dichalcogenide 1T-TiSe_{2} over a large volume of reciprocal space with x-ray diffuse scattering. Above the transition temperature, T_{CDW}, the in-plane diffuse scattering is marked by ellipses which reveal that the in-plane fluctuations are anisotropic. In addition, the out-of-plane diffuse scattering is characterized by rodlike structures which indicate that the CDW fluctuations in neighboring layers are largely decoupled. Our analysis of the diffuse scattering line shapes and orientations suggests that the three charge density wave components contain independent phase fluctuations with a hierarchy of length scales, leading to intricate fluctuation patterns that go beyond the conventional 2D-to-3D crossover picture.
- Top Cited Papers
- 20 June 2025
- Published by Springer Nature in Nature Materials
- Vol. 24 (7) , 1005-1018
Nonlinear transport in non-centrosymmetric systems
Ohm’s law has been a cornerstone of electronics since its experimental discovery. This law establishes that, in a conductive system, the voltage is directly proportional to the current. Even when time-reversal symmetry is disrupted, leading to the emergence of magnetoresistance and Hall effects, the linear relationship between voltage and current remains intact. However, recent experiments have demonstrated a breakdown of Ohm’s law in non-centrosymmetric structures. In these systems, nonlinear transport effects are permitted with quadratic scaling between voltages and currents. Here we review the main demonstrations of nonlinear transport in non-centrosymmetric systems, analysing the connection between nonlinear behaviour and the system’s symmetry. We also investigate the microscopic mechanisms driving these effects, such as Berry curvature dipole and Berry connection polarizability. Finally, we highlight potential applications of nonlinear transport in spintronics and energy harvesting.
- 20 June 2025
- Published by Springer Nature in Nature Materials
- Vol. 24 (7) , 1005-1018
Top Cited PapersNonlinear transport in non-centrosymmetric systems
Ohm’s law has been a cornerstone of electronics since its experimental discovery. This law establishes that, in a conductive system, the voltage is directly proportional to the current. Even when time-reversal symmetry is disrupted, leading to the emergence of magnetoresistance and Hall effects, the linear relationship between voltage and current remains intact. However, recent experiments have demonstrated a breakdown of Ohm’s law in non-centrosymmetric structures. In these systems, nonlinear transport effects are permitted with quadratic scaling between voltages and currents. Here we review the main demonstrations of nonlinear transport in non-centrosymmetric systems, analysing the connection between nonlinear behaviour and the system’s symmetry. We also investigate the microscopic mechanisms driving these effects, such as Berry curvature dipole and Berry connection polarizability. Finally, we highlight potential applications of nonlinear transport in spintronics and energy harvesting.