Sakineh Chabi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Sakineh Chabi has a total of 56 co-authors. Here are the top co-authors by number of shared publications:
- Yanqiu Zhu
State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures, MOE Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
6 shared publications - Yongde Xia
Department of Engineering, Faculty of Environment, Science and Economy, University of Exeter, Exeter, EX4 4QF, UK
6 shared publications Daniel Wesolowski
Power Sources Technology Group
3 shared publicationsZhuxian Yang
3 shared publications- Chuang Peng
School of Resource and Environmental Sciences Wuhan University Wuhan 430072 China
2 shared publications David Schrock
Power Sources Technology Group Sandia National Laboratories Albuquerque NM 87185 USA
2 shared publications
Latest Publications
- 3 April 2025
- Published by Wiley in Advanced Energy and Sustainability Research
- Vol. 6 (4)
Estimating the State of Charge in Lithium Primary Batteries: Recent Advances and Critical Insights
- 3 April 2025
- Published by Wiley in Advanced Energy and Sustainability Research
- Vol. 6 (4)
Estimating the State of Charge in Lithium Primary Batteries: Recent Advances and Critical Insights
- Open Access
- 8 February 2025
- Published by Wiley in Advanced Energy and Sustainability Research
- Vol. 6 (4)
Estimating the State of Charge in Lithium Primary Batteries: Recent Advances and Critical Insights
Lithium primary batteries (LPBs) remain essential in critical applications such as military, aerospace, medical and emergency devices, and portable electronics. Their superior energy density over lithium‐ion batteries offers a significant advantage for long‐duration use. Therefore, accurate estimation of the state of charge (SoC) is essential for ensuring the reliable and safe operation of these batteries. While extensive research has been conducted on SoC estimation techniques for lithium‐ion secondary batteries, LPBs present unique challenges that complicate accurate SoC estimation. Moreover, research on nondestructive testing techniques for SoC estimation in LPBs is significantly lacking. In this review article, it is aimed to provide a comprehensive overview of recent advancements in SoC estimation for LPBs and generates new insights and directions for future research. Herein, existing methods are discussed and their effectiveness and mechanisms are identified, and areas for further optimization are outlined. More theoretical/experimental efforts to advance SoC detection in LPBs is recommended due to challenges identified with existing techniques.
- 8 February 2025
- Published by Wiley in Advanced Energy and Sustainability Research
- Vol. 6 (4)
Open AccessEstimating the State of Charge in Lithium Primary Batteries: Recent Advances and Critical Insights
Lithium primary batteries (LPBs) remain essential in critical applications such as military, aerospace, medical and emergency devices, and portable electronics. Their superior energy density over lithium‐ion batteries offers a significant advantage for long‐duration use. Therefore, accurate estimation of the state of charge (SoC) is essential for ensuring the reliable and safe operation of these batteries. While extensive research has been conducted on SoC estimation techniques for lithium‐ion secondary batteries, LPBs present unique challenges that complicate accurate SoC estimation. Moreover, research on nondestructive testing techniques for SoC estimation in LPBs is significantly lacking. In this review article, it is aimed to provide a comprehensive overview of recent advancements in SoC estimation for LPBs and generates new insights and directions for future research. Herein, existing methods are discussed and their effectiveness and mechanisms are identified, and areas for further optimization are outlined. More theoretical/experimental efforts to advance SoC detection in LPBs is recommended due to challenges identified with existing techniques.
- Open Access
Manufacturing of Complex Silicon–Carbon Structures: Exploring SixCy Materials
This paper reports on the manufacturing of complex three-dimensional Si/C structures via a chemical vapor deposition method. The structure and properties of the grown materials were characterized using various techniques including scanning electron microscopy, aberration-corrected transmission electron microscopy, confocal Raman spectroscopy, and X-ray photoelectron spectroscopy. The spectroscopy results revealed that the grown materials were composed of micro/nanostructures with various compositions and dimensions. These included two-dimensional silicon carbide (SiC), cubic silicon, and various SiC polytypes. The coexistence of these phases at the nano-level and their interfaces can benefit several Si/C-based applications ranging from ceramics and structural applications to power electronics, aerospace, and high-temperature applications. With an average density of 7 mg/cm3, the grown materials can be considered ultralightweight, as they are three orders of magnitude lighter than bulk Si/C materials. This study aims to impact how ceramic materials are manufactured, which may lead to the design of new carbide materials or Si/C-based lightweight structures with additional functionalities and desired properties.
Open AccessManufacturing of Complex Silicon–Carbon Structures: Exploring SixCy Materials
This paper reports on the manufacturing of complex three-dimensional Si/C structures via a chemical vapor deposition method. The structure and properties of the grown materials were characterized using various techniques including scanning electron microscopy, aberration-corrected transmission electron microscopy, confocal Raman spectroscopy, and X-ray photoelectron spectroscopy. The spectroscopy results revealed that the grown materials were composed of micro/nanostructures with various compositions and dimensions. These included two-dimensional silicon carbide (SiC), cubic silicon, and various SiC polytypes. The coexistence of these phases at the nano-level and their interfaces can benefit several Si/C-based applications ranging from ceramics and structural applications to power electronics, aerospace, and high-temperature applications. With an average density of 7 mg/cm3, the grown materials can be considered ultralightweight, as they are three orders of magnitude lighter than bulk Si/C materials. This study aims to impact how ceramic materials are manufactured, which may lead to the design of new carbide materials or Si/C-based lightweight structures with additional functionalities and desired properties.
- Open Access
- 17 September 2021
- Published by Lupine Publishers LLC in Modern Approaches on Material Science
- Vol. 4 (4) , 561-577
Graphene Membranes: Transport Properties and Energy Applications
- 17 September 2021
- Published by Lupine Publishers LLC in Modern Approaches on Material Science
- Vol. 4 (4) , 561-577
Open AccessGraphene Membranes: Transport Properties and Energy Applications
- Open Access
- 10 July 2021
- Published by MDPI AG in Nanomaterials
- Vol. 11 (7) , 1799
The Creation of True Two-Dimensional Silicon Carbide
This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.
- 10 July 2021
- Published by MDPI AG in Nanomaterials
- Vol. 11 (7) , 1799
Open AccessThe Creation of True Two-Dimensional Silicon Carbide
This paper reports the successful synthesis of true two-dimensional silicon carbide using a top-down synthesis approach. Theoretical studies have predicted that 2D SiC has a stable planar structure and is a direct band gap semiconducting material. Experimentally, however, the growth of 2D SiC has challenged scientists for decades because bulk silicon carbide is not a van der Waals layered material. Adjacent atoms of SiC bond together via covalent sp3 hybridization, which is much stronger than van der Waals bonding in layered materials. Additionally, bulk SiC exists in more than 250 polytypes, further complicating the synthesis process, and making the selection of the SiC precursor polytype extremely important. This work demonstrates, for the first time, the successful isolation of 2D SiC from hexagonal SiC via a wet exfoliation method. Unlike many other 2D materials such as silicene that suffer from environmental instability, the created 2D SiC nanosheets are environmentally stable, and show no sign of degradation. 2D SiC also shows interesting Raman behavior, different from that of the bulk SiC. Our results suggest a strong correlation between the thickness of the nanosheets and the intensity of the longitudinal optical (LO) Raman mode. Furthermore, the created 2D SiC shows visible-light emission, indicating its potential applications for light-emitting devices and integrated microelectronics circuits. We anticipate that this work will cause disruptive impact across various technological fields, ranging from optoelectronics and spintronics to electronics and energy applications.
- Open Access
- 9 November 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (11) , 2226
Two-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide.- 9 November 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (11) , 2226
Open AccessTwo-Dimensional Silicon Carbide: Emerging Direct Band Gap Semiconductor
As a direct wide bandgap semiconducting material, two-dimensional, 2D, silicon carbide has the potential to bring revolutionary advances into optoelectronic and electronic devices. It can overcome current limitations with silicon, bulk SiC, and gapless graphene. In addition to SiC, which is the most stable form of monolayer silicon carbide, other compositions, i.e., are also predicted to be energetically favorable. Depending on the stoichiometry and bonding, monolayer may behave as a semiconductor, semimetal or topological insulator. With different Si/C ratios, the emerging 2D silicon carbide materials could attain novel electronic, optical, magnetic, mechanical, and chemical properties that go beyond those of graphene, silicene, and already discovered 2D semiconducting materials. This paper summarizes key findings in 2D SiC and provides insight into how changing the arrangement of silicon and carbon atoms in SiC will unlock incredible electronic, magnetic, and optical properties. It also highlights the significance of these properties for electronics, optoelectronics, magnetic, and energy devices. Finally, it will discuss potential synthesis approaches that can be used to grow 2D silicon carbide. - Open Access
- 16 January 2020
- Published by Wiley in Advanced Intelligent Systems
- Vol. 2 (5)
3D Assembly of Graphene Nanomaterials for Advanced Electronics
Since the discovery of electricity and the creation of the first transistors two centuries ago, the field of electronics has evolved rapidly to become omnipresent. Today, electronic devices are challenged by new demands in function and performance: they are expected to be lightweight, highly efficient, flexible, smart, implantable, and so on. To meet these demands, the materials and components in devices need to be carefully selected and assembled together. In this regard, the controlled assembly of 3D graphene structures holds tremendous potential to achieve such levels of multifunctionality and outstanding properties. Advanced processing approaches, such as 3D printing, allow the fabrication of a variety of 3D graphene–based materials that present outstanding properties and a high degree of multifunctionality. Herein, the recent progress in the fabrication of graphene‐based devices for advanced electronics using controlled assembly is reported. The benefits of controlling the microstructure of graphene nanomaterials for enhanced properties and functionalities are highlighted, and the various fabrication methods and their implications on the organization of materials are reviewed, as well as selected electrical devices. The approaches described here are opening up new avenues for the fabrication of health or structural monitoring devices, autonomous machines, and interconnected objects.
- 16 January 2020
- Published by Wiley in Advanced Intelligent Systems
- Vol. 2 (5)
Open Access3D Assembly of Graphene Nanomaterials for Advanced Electronics
Since the discovery of electricity and the creation of the first transistors two centuries ago, the field of electronics has evolved rapidly to become omnipresent. Today, electronic devices are challenged by new demands in function and performance: they are expected to be lightweight, highly efficient, flexible, smart, implantable, and so on. To meet these demands, the materials and components in devices need to be carefully selected and assembled together. In this regard, the controlled assembly of 3D graphene structures holds tremendous potential to achieve such levels of multifunctionality and outstanding properties. Advanced processing approaches, such as 3D printing, allow the fabrication of a variety of 3D graphene–based materials that present outstanding properties and a high degree of multifunctionality. Herein, the recent progress in the fabrication of graphene‐based devices for advanced electronics using controlled assembly is reported. The benefits of controlling the microstructure of graphene nanomaterials for enhanced properties and functionalities are highlighted, and the various fabrication methods and their implications on the organization of materials are reviewed, as well as selected electrical devices. The approaches described here are opening up new avenues for the fabrication of health or structural monitoring devices, autonomous machines, and interconnected objects.
- Open Access
- 24 January 2019
- Published by Springer Nature in Scientific Reports
- Vol. 9 (1) , 740
Structure-Mechanical Property Relations of Skin-Core Regions of Poly(p-phenylene terephthalamide) Single Fiber
This study aims to elucidate the relationship between the mechanical properties and microstructures of poly(p-phenylene terephthalamide) (PPTA) single fibers at the micro/nano scale. The skin-core structure of Kevlar® 29 fiber was revealed through a focused electron beam experiment inside a scanning electron microscope (SEM) chamber. Cross sectional SEM images of the broken fiber showed that the thickness of the skin ranged from 300 to 800 nm and that the core region consisted of highly packed layers of fibrils. The skin and the core regions showed different mechanical behaviour and structural changes during nanoindentation and micro-tensile tests, indicating that the core region possessed higher stiffness, whereas the skin region could undergo more plastic deformation. Furthermore, micro-tensile testing results showed that the ultimate tensile strength, the elongation at failure, and the tensile toughness of single fibers could be significantly enhanced by cyclic loading. Such findings are important to understand the contribution of different microstructures of Kevlar® fibers to their mechanical performance, which in turn can be utilized to design high-performance fibers that are not limited by the trade-off between toughness and stiffness.
- 24 January 2019
- Published by Springer Nature in Scientific Reports
- Vol. 9 (1) , 740
Open AccessStructure-Mechanical Property Relations of Skin-Core Regions of Poly(p-phenylene terephthalamide) Single Fiber
This study aims to elucidate the relationship between the mechanical properties and microstructures of poly(p-phenylene terephthalamide) (PPTA) single fibers at the micro/nano scale. The skin-core structure of Kevlar® 29 fiber was revealed through a focused electron beam experiment inside a scanning electron microscope (SEM) chamber. Cross sectional SEM images of the broken fiber showed that the thickness of the skin ranged from 300 to 800 nm and that the core region consisted of highly packed layers of fibrils. The skin and the core regions showed different mechanical behaviour and structural changes during nanoindentation and micro-tensile tests, indicating that the core region possessed higher stiffness, whereas the skin region could undergo more plastic deformation. Furthermore, micro-tensile testing results showed that the ultimate tensile strength, the elongation at failure, and the tensile toughness of single fibers could be significantly enhanced by cyclic loading. Such findings are important to understand the contribution of different microstructures of Kevlar® fibers to their mechanical performance, which in turn can be utilized to design high-performance fibers that are not limited by the trade-off between toughness and stiffness.
- Open Access
- 9 March 2018
- Published by Portico in Veruscript Functional Nanomaterials
- Vol. 2, 1-10
In-situ compression and electrochemical studies of graphene foam
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- 9 March 2018
- Published by Portico in Veruscript Functional Nanomaterials
- Vol. 2, 1-10
Open AccessIn-situ compression and electrochemical studies of graphene foam
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