Basanta Bhowmik
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Basanta Bhowmik has a total of 45 co-authors. Here are the top co-authors by number of shared publications:
K. Dutta
Nano Thin Films and Solid State Gas Sensor Devices Laboratory, Department of Electronics and Telecommunication Engineering, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, Howrah, India
12 shared publicationsP. Bhattacharyya
Nano Thin Films and Solid State Gas Sensor Devices Laboratory, Indian Institute of Engineering Science and Technology, Shibpur, India
11 shared publications- Arnab Hazra
Dept. of Electrical and Electronics Engineering, Birla Institute of Technology and Science (BITS)-Pilani, Vidya Vihar, Rajasthan 333031, India
10 shared publications - Partha Bhattacharyya
Department of Electronics and Telecommunication Engineering, Nano Thin Films and Solid State Gas Sensor Devices Laboratory, Indian Institute of Engineering Science and Technology (IIEST), Shibpur, India
10 shared publications Nikita Kar Chowdhury
6 shared publicationsAditya Kumar Singh
5 shared publications
Latest Publications
- 11 November 2026
- Published by Springer Nature in Journal of Electronic Materials
Graphene Nanocomposite Micro or Nano Sensor for Industrial Applications
- 11 November 2026
- Published by Springer Nature in Journal of Electronic Materials
Graphene Nanocomposite Micro or Nano Sensor for Industrial Applications
- 24 September 2026
- Published by Springer Nature in Journal of Optics
- p. 1-13
Influence of transport layer on the efficiency improvement of bilayer perovskite solar devices
- 24 September 2026
- Published by Springer Nature in Journal of Optics
- p. 1-13
Influence of transport layer on the efficiency improvement of bilayer perovskite solar devices
- 6 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Letters
- Vol. 10 (6) , 2001404-2001407
Unveiling of Ni Clusters MoS 2 Thin-Film Transistor 3, 3-dimethyl Pentane Sensor; a Biomarker Linked to Breast Cancer
This study demonstrated for the first time 3, 3-dimethylpentane detection using MoS2 thin film transistor (TFT) and modified Ni cluster MoS2 TFT sensor, a biomarker linked to breast cancer. The Ni clusters make the film more sensitive and selective by creating active adsorption sites and catalytic interactions. The MoS2 film was prepared by low cost hydrothermal followed by dip coating for successfully forming Ni cluster on MoS2/SiO2/Si. Electrical characterizations of the Ni-MoS2 TFT for the –1 V to 2.5 V bias window showed Ion/Ioff, sub-threshold swing (SS), threshold voltage (Vt), and mobility (μn) as 5.3×106, 67 mv/decade, 0.6 V, and 47 cm2/Vs, respectively. Under dynamic response measurements Ni-cluster modified MoS₂ surfaces demonstrated better 3, 3-dimethylpentane adsorption capability than the pristine MoS2. 3, 3-dimethylpentane sensing showed maximum response of 79% and 59.6% at 150°C and 200°C for Ni-MoS2 thin film and pristine MoS2, respectively. The sensor showed fast response time of ∼5s with lower detection limits of ∼1 ppm, and good repeatability. Electrostatic gate induced adsorption-desorption of 3, 3-dimethylpentane accelerated by spill over mechanism of Ni cluster on MoS2 surfaces were correlated considering barrier limited energy band diagram and charge transfer model.
- 6 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Letters
- Vol. 10 (6) , 2001404-2001407
Unveiling of Ni Clusters MoS 2 Thin-Film Transistor 3, 3-dimethyl Pentane Sensor; a Biomarker Linked to Breast Cancer
This study demonstrated for the first time 3, 3-dimethylpentane detection using MoS2 thin film transistor (TFT) and modified Ni cluster MoS2 TFT sensor, a biomarker linked to breast cancer. The Ni clusters make the film more sensitive and selective by creating active adsorption sites and catalytic interactions. The MoS2 film was prepared by low cost hydrothermal followed by dip coating for successfully forming Ni cluster on MoS2/SiO2/Si. Electrical characterizations of the Ni-MoS2 TFT for the –1 V to 2.5 V bias window showed Ion/Ioff, sub-threshold swing (SS), threshold voltage (Vt), and mobility (μn) as 5.3×106, 67 mv/decade, 0.6 V, and 47 cm2/Vs, respectively. Under dynamic response measurements Ni-cluster modified MoS₂ surfaces demonstrated better 3, 3-dimethylpentane adsorption capability than the pristine MoS2. 3, 3-dimethylpentane sensing showed maximum response of 79% and 59.6% at 150°C and 200°C for Ni-MoS2 thin film and pristine MoS2, respectively. The sensor showed fast response time of ∼5s with lower detection limits of ∼1 ppm, and good repeatability. Electrostatic gate induced adsorption-desorption of 3, 3-dimethylpentane accelerated by spill over mechanism of Ni cluster on MoS2 surfaces were correlated considering barrier limited energy band diagram and charge transfer model.
- 1 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 26 (10) , 15059-15066
Low-Energy Room-Temperature Ni-Functionalized ZnO–TiO 2 Ternary Nanocomposite Thin-Film Transistor Formaldehyde Sensor
- 1 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 26 (10) , 15059-15066
Low-Energy Room-Temperature Ni-Functionalized ZnO–TiO 2 Ternary Nanocomposite Thin-Film Transistor Formaldehyde Sensor
- 27 June 2025
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 54 (9) , 6929-6959
Ternary Composite and Beyond for Gas Sensing: A Review
- 27 June 2025
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 54 (9) , 6929-6959
Ternary Composite and Beyond for Gas Sensing: A Review
- 8 April 2025
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 318
Room temperature selective propanol sensor based on p-TiO NP /n-ZnO NS heterojunction interfaces
- 8 April 2025
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 318
Room temperature selective propanol sensor based on p-TiO NP /n-ZnO NS heterojunction interfaces
- 2 October 2024
- Published by Springer Nature
- p. 155-161
Efficient Sr-TiO3 Nanoparticle-Based Resistive n-Butanol Sensor: Effects of Composite Materials
- 2 October 2024
- Published by Springer Nature
- p. 155-161
Efficient Sr-TiO3 Nanoparticle-Based Resistive n-Butanol Sensor: Effects of Composite Materials
- 2 October 2024
- Published by Springer Nature
- p. 9-16
Ethanol Sensing Performance of Au/TiO2/Ti TFT: Effects of Back Gate Biasing
- 2 October 2024
- Published by Springer Nature
- p. 9-16
Ethanol Sensing Performance of Au/TiO2/Ti TFT: Effects of Back Gate Biasing
- 3 September 2024
- Published by Springer Nature
- p. 101-119
Graphene-Based Devices for Beyond CMOS Applications
- 3 September 2024
- Published by Springer Nature
- p. 101-119
Graphene-Based Devices for Beyond CMOS Applications
- 1 February 2024
- Published by Royal Society of Chemistry (RSC) in The Analyst
- Vol. 149 (6) , 1895-1906
Frequency-tuned selectivity enhancement of Mg@ZnO–TiO 2 nanoflake-based heterojunction sensor devices
Selectivity improvement by the frequency tuning of Mg@ZnO–TiO 2 nanoflake-based heterojunction devices under exposure to different volatile organic compounds is the prime focus of the present paper.
- 1 February 2024
- Published by Royal Society of Chemistry (RSC) in The Analyst
- Vol. 149 (6) , 1895-1906
Frequency-tuned selectivity enhancement of Mg@ZnO–TiO 2 nanoflake-based heterojunction sensor devices
Selectivity improvement by the frequency tuning of Mg@ZnO–TiO 2 nanoflake-based heterojunction devices under exposure to different volatile organic compounds is the prime focus of the present paper.