Yoshitaka Kawasugi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Yoshitaka Kawasugi has a total of 50 co-authors. Here are the top co-authors by number of shared publications:
- Hiroshi M. Yamamoto
RIKEN 2 , Wako, Saitama 351-0198
14 shared publications - Reizo Kato
RIKEN
11 shared publications - Naoya Tajima
Department of Physics, Toho University, Funabashi, Chiba 274-8510, Japan
9 shared publications Reizo Kato
RIKEN 351-0198 Wako Saitama Japan
5 shared publicationsJiang Pu
Department of Applied Physics Nagoya University Furo-cho Chikusa-ku 464-8603 Nagoya Japan
4 shared publicationsSeiji Yunoki
RIKEN 351-0198 Wako Saitama Japan
4 shared publications
Latest Publications
- 15 June 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (24)
Extrinsic origin of nonreciprocal resistance in a non-chiral organic superconductor
We investigate nonreciprocal conductivity in the superconducting state of the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl. Although the material is neither chiral nor polar, we have observed nonreciprocal resistance proportional to the applied current and in-plane magnetic field, which is comparable with that of gate-induced superconducting MoS2. However, we find that this nonreciprocal resistance exhibits significant sample dependence, with even its sign varying. Furthermore, within the same sample, its magnitude and sign varied depending on the measurement location, suggesting the existence of nonreciprocal resistance governed by a mechanism distinct from the Rashba effect in polar superconductors. The increase in nonreciprocal resistance due to current terminals with high contact resistance suggests the Nernst effect, arising from slight temperature gradients along the out-of-plane direction, as its origin. Utilizing this, we successfully increased the nonreciprocal coefficient by up to approximately twofold by processing the sample into a nonuniform shape.
- 15 June 2026
- Published by AIP Publishing in Applied Physics Letters
- Vol. 128 (24)
Extrinsic origin of nonreciprocal resistance in a non-chiral organic superconductor
We investigate nonreciprocal conductivity in the superconducting state of the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl. Although the material is neither chiral nor polar, we have observed nonreciprocal resistance proportional to the applied current and in-plane magnetic field, which is comparable with that of gate-induced superconducting MoS2. However, we find that this nonreciprocal resistance exhibits significant sample dependence, with even its sign varying. Furthermore, within the same sample, its magnitude and sign varied depending on the measurement location, suggesting the existence of nonreciprocal resistance governed by a mechanism distinct from the Rashba effect in polar superconductors. The increase in nonreciprocal resistance due to current terminals with high contact resistance suggests the Nernst effect, arising from slight temperature gradients along the out-of-plane direction, as its origin. Utilizing this, we successfully increased the nonreciprocal coefficient by up to approximately twofold by processing the sample into a nonuniform shape.
- 15 June 2026
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 95 (6)
Anomalous Phase-Coherence Scaling in a Quantum-Critical Dirac Semimetal
- 15 June 2026
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 95 (6)
Anomalous Phase-Coherence Scaling in a Quantum-Critical Dirac Semimetal
- 30 June 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 126 (26)
Off-diagonal thermoelectric effect and its gate tuning in molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl
We report on the off-diagonal (transverse) thermoelectric effect in the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl, originating from the coexistence of the two-dimensional hole-like and one-dimensional electron-like Fermi surfaces. The off-diagonal thermoelectric voltage corresponds to the anisotropy of the Seebeck coefficient and is proportional to the sample length perpendicular to the temperature gradient, reaching ∼90 μV/K in our sample. Also, we investigated the effect of electric-double-layer doping on the off-diagonal thermoelectric effect. Under hole doping, while the resistance significantly decreases, the off-diagonal Seebeck coefficient does not decrease probably because of pseudogap formation. As a result, hole doping increases the off-diagonal power factor by up to a factor of approximately 15 at the doped surface.
- 30 June 2025
- Published by AIP Publishing in Applied Physics Letters
- Vol. 126 (26)
Off-diagonal thermoelectric effect and its gate tuning in molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl
We report on the off-diagonal (transverse) thermoelectric effect in the molecular conductor κ-(BEDT-TTF)2Cu[N(CN)2]Cl, originating from the coexistence of the two-dimensional hole-like and one-dimensional electron-like Fermi surfaces. The off-diagonal thermoelectric voltage corresponds to the anisotropy of the Seebeck coefficient and is proportional to the sample length perpendicular to the temperature gradient, reaching ∼90 μV/K in our sample. Also, we investigated the effect of electric-double-layer doping on the off-diagonal thermoelectric effect. Under hole doping, while the resistance significantly decreases, the off-diagonal Seebeck coefficient does not decrease probably because of pseudogap formation. As a result, hole doping increases the off-diagonal power factor by up to a factor of approximately 15 at the doped surface.
- Open Access
Molecular Conductors Based on Dimethylcyclohexene-Fused Tetrathiafulvalene
Chiral electroactive materials have attracted attention for the effects of electrical magnetochiral anisotropy (eMChA) and chirality-induced spin selectivity (CISS). The combination of tetrathiafulvalene (TTF) with chiral moieties is one way to access chiral electroactive materials. In this paper, we have focused on the fused 2,3-dimethylcyclohexene (DMCh) ring as a substituent with chiral carbon atoms and without heteroatoms, which has not been used in the field of molecular conductors, and we synthesized a new TTF derivative (rac-DMCh-EDT-TTF). We have developed novel molecular conductors (rac-DMCh-EDT-TTF)2X (X− = PF6−, AsF6− and ClO4−), which have bilayer conducting sheets composed of the two crystallographically independent molecules. All salts exhibited semiconducting behavior from room temperature down to low temperatures, and a resistivity anomaly was observed at 180–250 K. X-ray structure analysis at 100 K and 263 K and molecular orbital calculations using the results of X-ray structure analysis indicated the emergence of a charge disproportionation between Layers 1 and 2 at the low-temperature phase.
Open AccessMolecular Conductors Based on Dimethylcyclohexene-Fused Tetrathiafulvalene
Chiral electroactive materials have attracted attention for the effects of electrical magnetochiral anisotropy (eMChA) and chirality-induced spin selectivity (CISS). The combination of tetrathiafulvalene (TTF) with chiral moieties is one way to access chiral electroactive materials. In this paper, we have focused on the fused 2,3-dimethylcyclohexene (DMCh) ring as a substituent with chiral carbon atoms and without heteroatoms, which has not been used in the field of molecular conductors, and we synthesized a new TTF derivative (rac-DMCh-EDT-TTF). We have developed novel molecular conductors (rac-DMCh-EDT-TTF)2X (X− = PF6−, AsF6− and ClO4−), which have bilayer conducting sheets composed of the two crystallographically independent molecules. All salts exhibited semiconducting behavior from room temperature down to low temperatures, and a resistivity anomaly was observed at 180–250 K. X-ray structure analysis at 100 K and 263 K and molecular orbital calculations using the results of X-ray structure analysis indicated the emergence of a charge disproportionation between Layers 1 and 2 at the low-temperature phase.
- 15 December 2023
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 92 (12)
Evidence for Three-dimensional Dirac Semimetal State in Strongly Correlated Organic Quasi-two-dimensional Material
- 15 December 2023
- Published by Physical Society of Japan in Journal of the Physical Society of Japan
- Vol. 92 (12)
Evidence for Three-dimensional Dirac Semimetal State in Strongly Correlated Organic Quasi-two-dimensional Material
- 20 March 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 122 (12) , 123102
Strain-induced massless Dirac fermion state of the molecular conductor α-(BEDT-TTF)2I3
Uniaxial pressure can dramatically change the properties of low-dimensional systems and induce electronic phase transitions. The first-discovered molecular massless Dirac electron system α-(BEDT-TTF)2I3 has intensively been studied because of its unique features, such as the Fermi energy being very close to the Dirac point, strong electron correlation, and the quantum phase transition from the charge-ordered insulating state. However, the Dirac state is realized only under high pressure of 15 kbar, which limits the measurement of physical properties (e.g., experimental determination of band dispersion and density of states). Here, we demonstrate that the Dirac state of α-(BEDT-TTF)2I3 can be realized by applying uniaxial bending strain without confining it in a pressure cell. Uniaxial strain below 1% completely suppresses the metal–insulator transition observed at ambient pressure. Under strain, a characteristic temperature dependence of magnetoresistance associated with the formation of the n = 0 Landau level is observed, indicating the realization of the massless Dirac state.
- 20 March 2023
- Published by AIP Publishing in Applied Physics Letters
- Vol. 122 (12) , 123102
Strain-induced massless Dirac fermion state of the molecular conductor α-(BEDT-TTF)2I3
Uniaxial pressure can dramatically change the properties of low-dimensional systems and induce electronic phase transitions. The first-discovered molecular massless Dirac electron system α-(BEDT-TTF)2I3 has intensively been studied because of its unique features, such as the Fermi energy being very close to the Dirac point, strong electron correlation, and the quantum phase transition from the charge-ordered insulating state. However, the Dirac state is realized only under high pressure of 15 kbar, which limits the measurement of physical properties (e.g., experimental determination of band dispersion and density of states). Here, we demonstrate that the Dirac state of α-(BEDT-TTF)2I3 can be realized by applying uniaxial bending strain without confining it in a pressure cell. Uniaxial strain below 1% completely suppresses the metal–insulator transition observed at ambient pressure. Under strain, a characteristic temperature dependence of magnetoresistance associated with the formation of the n = 0 Landau level is observed, indicating the realization of the massless Dirac state.
- Open Access
Simultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).
Open AccessSimultaneous Control of Bandfilling and Bandwidth in Electric Double-Layer Transistor Based on Organic Mott Insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl
The physics of quantum many-body systems have been studied using bulk correlated materials, and recently, moiré superlattices formed by atomic bilayers have appeared as a novel platform in which the carrier concentration and the band structures are highly tunable. In this brief review, we introduce an intermediate platform between those systems, namely, a band-filling- and bandwidth-tunable electric double-layer transistor based on a real organic Mott insulator κ-(BEDT-TTF)2Cu[N(CN)2]Cl. In the proximity of the bandwidth-control Mott transition at half filling, both electron and hole doping induced superconductivity (with almost identical transition temperatures) in the same sample. The normal state under electric double-layer doping exhibited non-Fermi liquid behaviors as in many correlated materials. The doping levels for the superconductivity and the non-Fermi liquid behaviors were highly doping-asymmetric. Model calculations based on the anisotropic triangular lattice explained many phenomena and the doping asymmetry, implying the importance of the noninteracting band structure (particularly the flat part of the band).
- Open Access
Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3
Field-effect transistors based on strongly correlated insulators are an excellent platform for studying the electronic phase transition and simultaneously developing phase transition transistors. Molecular conductors are suitable for phase transition transistors owing to the high tunability of the electronic states. Molecular Mott transistors show field-induced phase transitions including superconducting transitions. However, their application to charge-ordered insulators is limited. In this study, we fabricated electric double layer transistors based on quarter-filled charge-ordered insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. We observed ambipolar field effects in both compounds where both electron and hole doping (up to the order of ) reduces the resistance by the band filling shift from the commensurate value. The maximum field-effect mobilities are approximately 10 and 55 , and the gate-induced conductivities are 0.96 and in α-(BEDT-TTF)2I3 and α-(BETS)2I3, respectively. However, gate-induced metallic conduction does not emerge. The gate voltage dependence of the activation energy in α-(BEDT-TTF)2I3 and the Hall resistance in α-(BETS)2I3 imply that the electric double layer doping in the present experimental setup induces hopping transport rather than band-like two-dimensional transport.Open AccessElectric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3
Field-effect transistors based on strongly correlated insulators are an excellent platform for studying the electronic phase transition and simultaneously developing phase transition transistors. Molecular conductors are suitable for phase transition transistors owing to the high tunability of the electronic states. Molecular Mott transistors show field-induced phase transitions including superconducting transitions. However, their application to charge-ordered insulators is limited. In this study, we fabricated electric double layer transistors based on quarter-filled charge-ordered insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. We observed ambipolar field effects in both compounds where both electron and hole doping (up to the order of ) reduces the resistance by the band filling shift from the commensurate value. The maximum field-effect mobilities are approximately 10 and 55 , and the gate-induced conductivities are 0.96 and in α-(BEDT-TTF)2I3 and α-(BETS)2I3, respectively. However, gate-induced metallic conduction does not emerge. The gate voltage dependence of the activation energy in α-(BEDT-TTF)2I3 and the Hall resistance in α-(BETS)2I3 imply that the electric double layer doping in the present experimental setup induces hopping transport rather than band-like two-dimensional transport. - 20 May 2021
- Published by American Physical Society (APS) in Physical Review B
- Vol. 103 (20) , 205140
Pressure-induced phase switching of Shubnikov–de Haas oscillations in the molecular Dirac fermion systemWe report on the Shubnikov–de Haas (SdH) oscillations in the quasi-two-dimensional molecular conductor [BETS: bis(ethylenedithio)tetraselenafulvalene] laminated on polyimide films at 1.7 K. From the SdH phase factor we verified experimentally that the material is in the Dirac fermion phase under pressure. is in the vicinity of the phase transition between strongly correlated insulating and Dirac fermion phases, and is a possible candidate for an ambient-pressure molecular Dirac fermion system. However, the SdH oscillations indicate that the Berry phase is zero at ambient pressure. Under pressure, a Berry phase emerges when the metal-insulator crossover is almost suppressed at GPa. The results contrast with those for the pioneering molecular Dirac fermion system [BEDT-TTF: bis(ethylenedithio)tetrathiafulvalene] in which Dirac fermions and semiconducting behavior are simultaneously observed.- 20 May 2021
- Published by American Physical Society (APS) in Physical Review B
- Vol. 103 (20) , 205140
Pressure-induced phase switching of Shubnikov–de Haas oscillations in the molecular Dirac fermion systemWe report on the Shubnikov–de Haas (SdH) oscillations in the quasi-two-dimensional molecular conductor [BETS: bis(ethylenedithio)tetraselenafulvalene] laminated on polyimide films at 1.7 K. From the SdH phase factor we verified experimentally that the material is in the Dirac fermion phase under pressure. is in the vicinity of the phase transition between strongly correlated insulating and Dirac fermion phases, and is a possible candidate for an ambient-pressure molecular Dirac fermion system. However, the SdH oscillations indicate that the Berry phase is zero at ambient pressure. Under pressure, a Berry phase emerges when the metal-insulator crossover is almost suppressed at GPa. The results contrast with those for the pioneering molecular Dirac fermion system [BEDT-TTF: bis(ethylenedithio)tetrathiafulvalene] in which Dirac fermions and semiconducting behavior are simultaneously observed.