Wenbin Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Wenbin Wang has a total of 27 co-authors. Here are the top co-authors by number of shared publications:
- Fujun Zhang
Advanced Organic Materials and Devices Laboratory School of Physical Science and Engineering Beijing Jiaotong University Beijing China
6 shared publications Lingliang Li
Key Laboratory of Luminescence and Optical Information Ministry of Education Beijing Jiaotong University Beijing 100044 P. R. China
5 shared publicationsMiao Zhang
Key Laboratory of Luminescence and Optical Information Ministry of Education Beijing Jiaotong University Beijing 100044 P. R. China
5 shared publications- Mingde Du
QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Espoo FI-00076 Aalto, Finland
3 shared publications Jianli Miao
Key Laboratory of Luminescence and Optical Information Ministry of Education Beijing Jiaotong University Beijing 100044 P. R. China
2 shared publications- Ying Fang
CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
2 shared publications
Latest Publications
- 10 June 2018
- Published by Wiley in Advanced Optical Materials
- Vol. 6 (16)
Organic Photodetectors with Gain and Broadband/Narrowband Response under Top/Bottom Illumination Conditions
Organic photodetectors (OPDs) possessing broadband/narrowband photodetection capability and gain have great potential in integrated optoelectronics products. In this work, OPDs with a device structure of ITO/poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/thick active layer/semitransparent Al electrode exhibit the extraordinary functions, gain and bidirectional photodetection capability with tunable spectral response range. For the binary OPDs with poly(3‐hexylthiophene‐2,5‐diyl) (P3HT):[6,6]‐phenyl‐C71‐butyric acid methyl ester (PC71BM) (100:1, wt/wt) as active layer, the OPDs exhibit narrowband response from 620 to 700 nm with full‐width at half maximum (FWHM) of ≈30 nm under bottom illumination condition and broadband response from 300 to 700 nm under top illumination condition, respectively. To further confirm and optimize the extraordinary functions of OPDs, ternary devices are fabricated with P3HT:poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dit‐hiophene‐co‐3‐fluor‐othieno[3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC71BM (50:50:1, wt/wt) as active layer. The narrowband response can be adjusted to near infrared (NIR) region from 760 to 860 nm. The broadband response can be extended to NIR region with response range from 300 to 860 nm. Meanwhile, external quantum efficiency (EQE) spectral shape of the ternary OPDs becomes flatter under top illumination condition and can be kept constant under different bias. The ternary OPDs exhibit similar EQE values of ≈2000% and specific detectivity larger than 1011 Jones at −50 V bias under bottom and top illumination conditions.
- 10 June 2018
- Published by Wiley in Advanced Optical Materials
- Vol. 6 (16)
Organic Photodetectors with Gain and Broadband/Narrowband Response under Top/Bottom Illumination Conditions
Organic photodetectors (OPDs) possessing broadband/narrowband photodetection capability and gain have great potential in integrated optoelectronics products. In this work, OPDs with a device structure of ITO/poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS)/thick active layer/semitransparent Al electrode exhibit the extraordinary functions, gain and bidirectional photodetection capability with tunable spectral response range. For the binary OPDs with poly(3‐hexylthiophene‐2,5‐diyl) (P3HT):[6,6]‐phenyl‐C71‐butyric acid methyl ester (PC71BM) (100:1, wt/wt) as active layer, the OPDs exhibit narrowband response from 620 to 700 nm with full‐width at half maximum (FWHM) of ≈30 nm under bottom illumination condition and broadband response from 300 to 700 nm under top illumination condition, respectively. To further confirm and optimize the extraordinary functions of OPDs, ternary devices are fabricated with P3HT:poly[4,8‐bis(5‐(2‐ethylhexyl)thiophen‐2‐yl)benzo[1,2‐b:4,5‐b′]dit‐hiophene‐co‐3‐fluor‐othieno[3,4‐b]thiophene‐2‐carboxylate] (PTB7‐Th):PC71BM (50:50:1, wt/wt) as active layer. The narrowband response can be adjusted to near infrared (NIR) region from 760 to 860 nm. The broadband response can be extended to NIR region with response range from 300 to 860 nm. Meanwhile, external quantum efficiency (EQE) spectral shape of the ternary OPDs becomes flatter under top illumination condition and can be kept constant under different bias. The ternary OPDs exhibit similar EQE values of ≈2000% and specific detectivity larger than 1011 Jones at −50 V bias under bottom and top illumination conditions.
- 13 September 2017
- Published by Wiley in Advanced Functional Materials
- Vol. 27 (42)
Highly Sensitive Low‐Bandgap Perovskite Photodetectors with Response from Ultraviolet to the Near‐Infrared Region
It is a great challenge to obtain broadband response perovskite photodetectors (PPDs) due to the relatively large bandgaps of the most used methylammonium lead halide perovskites. The response range of the reported PPDs is limited in the ultraviolet–visible range. Here, highly sensitive PPDs are successfully fabricated with low bandgap (≈1.25 eV) (FASnI3)0.6(MAPbI3)0.4 perovskite as active layers, exhibiting a broadband response from 300 to 1000 nm. The performance of the PPDs can be optimized by adjusting the thicknesses of the perovskite and C60 layers. The optimized PPDs with 1000 nm thick perovskite layer and 70 nm thick C60 layer exhibit an almost flat external quantum efficiency (EQE) spectrum from 350 to 900 nm with EQE larger than 65% under −0.2 V bias. Meanwhile, the optimized PPDs also exhibit suppressed dark current of 3.9 nA, high responsivity (R) of over 0.4 A W−1, high specific detectivity (D*) of over 1012 Jones in the near‐infrared region under −0.2 V. Such highly sensitive broadband response PPDs, which can work well as self‐powered conditions, offer great potential applications in multicolor light detection.
- 13 September 2017
- Published by Wiley in Advanced Functional Materials
- Vol. 27 (42)
Highly Sensitive Low‐Bandgap Perovskite Photodetectors with Response from Ultraviolet to the Near‐Infrared Region
It is a great challenge to obtain broadband response perovskite photodetectors (PPDs) due to the relatively large bandgaps of the most used methylammonium lead halide perovskites. The response range of the reported PPDs is limited in the ultraviolet–visible range. Here, highly sensitive PPDs are successfully fabricated with low bandgap (≈1.25 eV) (FASnI3)0.6(MAPbI3)0.4 perovskite as active layers, exhibiting a broadband response from 300 to 1000 nm. The performance of the PPDs can be optimized by adjusting the thicknesses of the perovskite and C60 layers. The optimized PPDs with 1000 nm thick perovskite layer and 70 nm thick C60 layer exhibit an almost flat external quantum efficiency (EQE) spectrum from 350 to 900 nm with EQE larger than 65% under −0.2 V bias. Meanwhile, the optimized PPDs also exhibit suppressed dark current of 3.9 nA, high responsivity (R) of over 0.4 A W−1, high specific detectivity (D*) of over 1012 Jones in the near‐infrared region under −0.2 V. Such highly sensitive broadband response PPDs, which can work well as self‐powered conditions, offer great potential applications in multicolor light detection.
- 7 February 2017
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 17 (3) , 1995-2002
Highly Narrowband Photomultiplication Type Organic Photodetectors
Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at −60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window.
- 7 February 2017
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 17 (3) , 1995-2002
Highly Narrowband Photomultiplication Type Organic Photodetectors
Filterless narrowband response organic photodetectors (OPDs) present a great challenge due to the broad absorption range of organic semiconducting materials. The reported narrowband response OPDs also suffer from low external quantum efficiency (EQE) in the desired response window and low rejection ratio. Here, we report highly narrowband photomultiplication (PM) type OPDs based on P3HT:PC71BM (100:1, wt/wt) as active layer without an optical filter. The full width at half-maximum (fwhm) of the PM-type OPDs can be well retained less than 30 nm under different biases. Meanwhile, the champion EQE and rejection ratio approach 53 500% and 2020 at −60 V bias, respectively. The small fwhm should be attributed to the sharp absorption edge of active layer with small amount of PC71BM. The PM phenomenon is attributed to hole tunneling injection from the external circuit assisted by trapped electron in PC71BM near the Al electrode under light illumination. These highly narrowband PM-type OPDs should have great potential applications in sensitively detecting specific wavelength light and be blind to light outside of the desired response window.
- 8 February 2016
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 8 (10) , 5578-5586
Photomultiplication photodetectors with P3HT:fullerene-free material as the active layers exhibiting a broad response
A series of polymer photodetectors (PPDs) are fabricated based on P3HT as an electron donor and fullerene-free material DC-IDT2T as an electron acceptor. The only difference among these PPDs is the P3HT:DC-IDT2T doping weight ratios from 2 : 1 to 150 : 1. The PPDs with P3HT:DC-IDT2T (100 : 1, w/w) as the active layers exhibit champion external quantum efficiency (EQE) of 28 000% and 4000% corresponding to 390 nm and 750 nm light illumination at −20 V bias, respectively. The photomultiplication (PM) phenomenon should be attributed to the enhanced hole tunneling injection due to the interfacial band bending, which is induced by the trapped electrons in DC-IDT2T near the Al cathode. The high EQE value in the long wavelength range is due to the effect of DC-IDT2T photon harvesting and exciton dissociation on the interfacial trap-assisted hole tunneling injection. Meanwhile, the PPDs with DC-IDT2T as the electron acceptor exhibit superior stability compared with the PPDs with PC71BM as the electron acceptor.
- 8 February 2016
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 8 (10) , 5578-5586
Photomultiplication photodetectors with P3HT:fullerene-free material as the active layers exhibiting a broad response
A series of polymer photodetectors (PPDs) are fabricated based on P3HT as an electron donor and fullerene-free material DC-IDT2T as an electron acceptor. The only difference among these PPDs is the P3HT:DC-IDT2T doping weight ratios from 2 : 1 to 150 : 1. The PPDs with P3HT:DC-IDT2T (100 : 1, w/w) as the active layers exhibit champion external quantum efficiency (EQE) of 28 000% and 4000% corresponding to 390 nm and 750 nm light illumination at −20 V bias, respectively. The photomultiplication (PM) phenomenon should be attributed to the enhanced hole tunneling injection due to the interfacial band bending, which is induced by the trapped electrons in DC-IDT2T near the Al cathode. The high EQE value in the long wavelength range is due to the effect of DC-IDT2T photon harvesting and exciton dissociation on the interfacial trap-assisted hole tunneling injection. Meanwhile, the PPDs with DC-IDT2T as the electron acceptor exhibit superior stability compared with the PPDs with PC71BM as the electron acceptor.
- 1 October 2015
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 7 (40) , 22660-22668
Improved Performance of Photomultiplication Polymer Photodetectors by Adjustment of P3HT Molecular Arrangement
A series of photomultiplication (PM)-type polymer photodetectors (PPDs) were fabricated with polymer poly(3-hexylthiophene)–[6,6]-phenyl-C71-butyric acid methyl ester (P3HT–PC71BM) (100:1, w/w) as the active layers, the only difference being the self-assembly time of the active layers for adjusting the P3HT molecular arrangement. The grazing incidence X-ray diffraction (GIXRD) results exhibit that P3HT molecular arrangement can be adjusted between face-on and edge-on structures by controlling the self-assembly time. The champion EQE value of PPDs, based on the active layers without the self-assembly process, arrives at 6380% under 610 nm light illumination at −10 V bias, corresponding to the face-on molecular arrangement of P3HT in the active layers. The EQE values of PPDs were markedly decreased to 1600%, along with the self-assembly time up to 12 min, which should be attributed to the variation of absorption and hole transport ability of the active layers induced by the change of P3HT molecular arrangem...
- 1 October 2015
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 7 (40) , 22660-22668
Improved Performance of Photomultiplication Polymer Photodetectors by Adjustment of P3HT Molecular Arrangement
A series of photomultiplication (PM)-type polymer photodetectors (PPDs) were fabricated with polymer poly(3-hexylthiophene)–[6,6]-phenyl-C71-butyric acid methyl ester (P3HT–PC71BM) (100:1, w/w) as the active layers, the only difference being the self-assembly time of the active layers for adjusting the P3HT molecular arrangement. The grazing incidence X-ray diffraction (GIXRD) results exhibit that P3HT molecular arrangement can be adjusted between face-on and edge-on structures by controlling the self-assembly time. The champion EQE value of PPDs, based on the active layers without the self-assembly process, arrives at 6380% under 610 nm light illumination at −10 V bias, corresponding to the face-on molecular arrangement of P3HT in the active layers. The EQE values of PPDs were markedly decreased to 1600%, along with the self-assembly time up to 12 min, which should be attributed to the variation of absorption and hole transport ability of the active layers induced by the change of P3HT molecular arrangem...
- 15 June 2015
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 3 (28) , 7386-7393
Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region
Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region based on P3HT : PTB7-Th : PC 71 BM as the active layer are reported.
- 15 June 2015
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 3 (28) , 7386-7393
Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region
Highly sensitive polymer photodetectors with a broad spectral response range from UV light to the near infrared region based on P3HT : PTB7-Th : PC 71 BM as the active layer are reported.