Andreas Markwitz
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Andreas Markwitz has a total of 470 co-authors. Here are the top co-authors by number of shared publications:
- John Kennedy
National Isotope Centre, Earth Sciences New Zealand Lower Hutt New Zealand
79 shared publications H. Baumann
National Isotope Centre, GNS Science, 30 Gracefield Road, P.O. Box 31-312, Lower Hutt, New Zealand
31 shared publications- William Joseph Trompetter
GNS Science, Lower Hutt, New Zealand
26 shared publications - Fang Fang
National Isotope Centre, GNS Science, 30 Gracefield Road, Lower Hutt, New Zealand
19 shared publications - Perry K. Davy
New Zealand Institute for Earth Science Limited, Wellington, New Zealand
17 shared publications K. Bethge
16 shared publications
Latest Publications
- 1 April 2019
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 127, 158-163
Observation of multiple magnetic phases and complex nanostructures in Co implanted amorphous carbon films
- 1 April 2019
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 127, 158-163
Observation of multiple magnetic phases and complex nanostructures in Co implanted amorphous carbon films
- 3 April 2017
- Published by AIP Publishing in Applied Physics Letters
- Vol. 110 (14)
Self-assembly of magnetic nanoclusters in diamond-like carbon by diffusion processes enhanced by collision cascades
Mono-energetic cobalt implantation into hydrogenated diamond-like carbon at room temperature results in a bimodal distribution of implanted atoms without any thermal treatment. The ∼100 nm thin films were synthesised by mass selective ion beam deposition. The films were implanted with cobalt at an energy of 30 keV and an ion current density of ∼5 μA cm−2. Simulations suggest the implantation profile to be single Gaussian with a projected range of ∼37 nm. High resolution Rutherford backscattering measurements reveal that a bimodal distribution evolves from a single near-Gaussian distribution as the fluence increases from 1.2 to 7 × 1016 cm−2. Cross-sectional transmission electron microscopy further reveals that the implanted atoms cluster into nanoparticles. At high implantation doses, the nanoparticles assemble primarily in two bands: one near the surface with nanoparticle diameters of up to 5 nm and the other beyond the projected range with ∼2 nm nanoparticles. The bimodal distribution along with the nanoparticle formation is explained with diffusion enhanced by energy deposited during collision cascades, relaxation of thermal spikes, and defects formed during ion implantation. This unique distribution of magnetic nanoparticles with the bimodal size and range is of significant interest to magnetic semiconductor and sensor applications.
- 3 April 2017
- Published by AIP Publishing in Applied Physics Letters
- Vol. 110 (14)
Self-assembly of magnetic nanoclusters in diamond-like carbon by diffusion processes enhanced by collision cascades
Mono-energetic cobalt implantation into hydrogenated diamond-like carbon at room temperature results in a bimodal distribution of implanted atoms without any thermal treatment. The ∼100 nm thin films were synthesised by mass selective ion beam deposition. The films were implanted with cobalt at an energy of 30 keV and an ion current density of ∼5 μA cm−2. Simulations suggest the implantation profile to be single Gaussian with a projected range of ∼37 nm. High resolution Rutherford backscattering measurements reveal that a bimodal distribution evolves from a single near-Gaussian distribution as the fluence increases from 1.2 to 7 × 1016 cm−2. Cross-sectional transmission electron microscopy further reveals that the implanted atoms cluster into nanoparticles. At high implantation doses, the nanoparticles assemble primarily in two bands: one near the surface with nanoparticle diameters of up to 5 nm and the other beyond the projected range with ∼2 nm nanoparticles. The bimodal distribution along with the nanoparticle formation is explained with diffusion enhanced by energy deposited during collision cascades, relaxation of thermal spikes, and defects formed during ion implantation. This unique distribution of magnetic nanoparticles with the bimodal size and range is of significant interest to magnetic semiconductor and sensor applications.
- 23 February 2017
- Published by American Physical Society (APS) in Physical Review B
- Vol. 95 (5) , 054120
Hydrogen-related excitons and their excited-state transitions in ZnO
The role of hydrogen in the photoluminescence (PL) of ZnO was investigated using four different types of bulk ZnO single crystal, with varying concentrations of unintentional hydrogen donor and Group I acceptor impurities. Photoluminescence spectra were measured at 3 K, with emission energies determined to ±50 μeV, before and after separate annealing in , , and atmospheres. Using this approach, several new hydrogen-related neutral-donor-bound excitons, and their corresponding B exciton, ionized donor, and two electron satellite (TES) excited state transitions were identified and their properties further investigated using hydrogen and deuterium ion implantation. The commonly observed (3.36272 eV) emission due to excitons bound to multicoordinated hydrogen inside an oxygen vacancy (), that is present in most ZnO material, was noticeably absent in hydrothermally grown (HT) ZnO and instead was replaced by a doublet of two closely lying recombination lines (3.36219, 3.36237 eV) due to a hydrogen-related donor with a binding energy () of 47.7 meV. A new and usually dominant recombination line (3.36085 eV) due to a different hydrogen-related defect complex with an of 49.5 meV was also identified in HT ZnO. Here, and were stable up to approximately 400 and 600 °C, respectively, indicating that they are likely to contribute to the unintentional -type conductivity of ZnO. Another doublet (3.36137, 3.36148 eV) was identified in hydrogenated HT ZnO single crystals with low Li concentrations, and this was associated with a defect complex with an of 49.1 meV. A broad near band edge (NBE) emission centered at 3.366 eV was associated with excitons bound to subsurface hydrogen. We further demonstrate that hydrogen incorporates on different lattice sites for different annealing conditions and show that the new features , , and most likely originate from the lithium-hydrogen defect complexes , , and , respectively.- 23 February 2017
- Published by American Physical Society (APS) in Physical Review B
- Vol. 95 (5) , 054120
Hydrogen-related excitons and their excited-state transitions in ZnO
The role of hydrogen in the photoluminescence (PL) of ZnO was investigated using four different types of bulk ZnO single crystal, with varying concentrations of unintentional hydrogen donor and Group I acceptor impurities. Photoluminescence spectra were measured at 3 K, with emission energies determined to ±50 μeV, before and after separate annealing in , , and atmospheres. Using this approach, several new hydrogen-related neutral-donor-bound excitons, and their corresponding B exciton, ionized donor, and two electron satellite (TES) excited state transitions were identified and their properties further investigated using hydrogen and deuterium ion implantation. The commonly observed (3.36272 eV) emission due to excitons bound to multicoordinated hydrogen inside an oxygen vacancy (), that is present in most ZnO material, was noticeably absent in hydrothermally grown (HT) ZnO and instead was replaced by a doublet of two closely lying recombination lines (3.36219, 3.36237 eV) due to a hydrogen-related donor with a binding energy () of 47.7 meV. A new and usually dominant recombination line (3.36085 eV) due to a different hydrogen-related defect complex with an of 49.5 meV was also identified in HT ZnO. Here, and were stable up to approximately 400 and 600 °C, respectively, indicating that they are likely to contribute to the unintentional -type conductivity of ZnO. Another doublet (3.36137, 3.36148 eV) was identified in hydrogenated HT ZnO single crystals with low Li concentrations, and this was associated with a defect complex with an of 49.1 meV. A broad near band edge (NBE) emission centered at 3.366 eV was associated with excitons bound to subsurface hydrogen. We further demonstrate that hydrogen incorporates on different lattice sites for different annealing conditions and show that the new features , , and most likely originate from the lithium-hydrogen defect complexes , , and , respectively.- 1 January 2017
- Published by Inderscience Publishers in International Journal of Nanotechnology
- Vol. 14 (1/2/3/4/5/) , 100
Ferromagnetism in a diamond-like carbon film after nickel implantation
Mass selective ion beam deposited diamond-like carbon (DLC) films were implanted with Ni
- 1 January 2017
- Published by Inderscience Publishers in International Journal of Nanotechnology
- Vol. 14 (1/2/3/4/5/) , 100
Ferromagnetism in a diamond-like carbon film after nickel implantation
Mass selective ion beam deposited diamond-like carbon (DLC) films were implanted with Ni
- Top Cited Papers
- 1 March 2016
- Published by Elsevier in Applied Surface Science
- Vol. 367, 52-58
Controlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment
- 1 March 2016
- Published by Elsevier in Applied Surface Science
- Vol. 367, 52-58
Top Cited PapersControlling preferred orientation and electrical conductivity of zinc oxide thin films by post growth annealing treatment