Paulo Henrique Oliveira Rappl
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Paulo Henrique Oliveira Rappl has a total of 170 co-authors. Here are the top co-authors by number of shared publications:
- Eduardo Abramof
Instituto Nacional de Pesquisas Espaciais
64 shared publications - Andre Bohomoletz Henriques
Instituto de Física, Universidade de São Paulo 1 , 05508-090 São Paulo, Brazil
19 shared publications A. Y. Ueta
Instituto Nacional de Pesquisas Espaciais (INPE) Laboratório Associado de Sensores e Materiais (LAS) CP 515, 12245-970 São José dos Campos, SP, Brazil
11 shared publicationsA.Y. Ueta
Laboratório Associado de Sensores e Materiais, Instituto Nacional de Pesquisas Espaciais, PB 515, 12201-970 São José dos Campos, SP, Brazil
10 shared publicationsH. Closs
Instituto Nacional de Pesquisas Espaciais (INPE) Laboratório Associado de Sensores e Materiais (LAS) CP 515, 12245-970 São José dos Campos, SP, Brazil
10 shared publicationsP. Motisuke
Instituto Nacional de Pesquisas Espaciais 1 Laboratório Associado de Sensores e Materiais CP 515, São José dos Campos, São Paulo 12245-970, Brazil
10 shared publications
Latest Publications
- Open Access
- 30 March 2026
- Published by Wiley in Advanced Materials Interfaces
- Vol. 13 (10)
Microwave Absorption for Detection of Dirac Fermions in SnTe Films
This work investigates SnTe thin films using microwave absorption as a probe for the presence of Dirac fermions. Shubnikov–de Haas oscillations observed in the microwave absorption signal were analyzed for both uncapped and capped samples, where a BaF 2 cap layer was employed to protect the topological surface states from degradation. Unexpectedly, signatures of Dirac fermions were also detected in the uncapped sample, despite previous magnetotransport measurements showing no evidence of their presence. This finding provides strong evidence that the topological surface states are robust against deterioration due to atmospheric exposure and that microwave absorption measurements can reveal these states even when they are not accessible through transport measurements. Furthermore, Zeeman splitting was observed in the fast Fourier transform of the oscillations, indicating the presence of low‐mobility channels that had previously been detected only at higher magnetic fields.
- 30 March 2026
- Published by Wiley in Advanced Materials Interfaces
- Vol. 13 (10)
Open AccessMicrowave Absorption for Detection of Dirac Fermions in SnTe Films
This work investigates SnTe thin films using microwave absorption as a probe for the presence of Dirac fermions. Shubnikov–de Haas oscillations observed in the microwave absorption signal were analyzed for both uncapped and capped samples, where a BaF 2 cap layer was employed to protect the topological surface states from degradation. Unexpectedly, signatures of Dirac fermions were also detected in the uncapped sample, despite previous magnetotransport measurements showing no evidence of their presence. This finding provides strong evidence that the topological surface states are robust against deterioration due to atmospheric exposure and that microwave absorption measurements can reveal these states even when they are not accessible through transport measurements. Furthermore, Zeeman splitting was observed in the fast Fourier transform of the oscillations, indicating the presence of low‐mobility channels that had previously been detected only at higher magnetic fields.
- 19 May 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (5)
Comparative analysis of SnTe films: Protecting topological surface states with cap layer- 19 May 2025
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 9 (5)
Comparative analysis of SnTe films: Protecting topological surface states with cap layer- 13 September 2024
- Published by Elsevier in Optical Materials
- Vol. 157
Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films
- 13 September 2024
- Published by Elsevier in Optical Materials
- Vol. 157
Negative and persistent photoconductivity in Bi-doped Pb0.5Sn0.5Te epitaxial films
- Open Access
- 23 May 2024
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 135 (20)
Detection of Dirac fermions in capped SnTe film via magnetotransport measurements
In this work, we present the investigation of the magnetotransport properties of a capped SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the detection of Dirac fermions. The cap layer used was a 10 nm thick Sn0.98Eu0.02Te film, which can also contribute to the transport such that it is mandatory to isolate its contribution from the electrical transport measured in the sample. To separate the contribution from both layers, photoconductivity measurements were performed. A detailed analysis of the Shubnikov–de Haas oscillations is carried out using theoretical expressions and building the Landau-level indexation. We found that Dirac fermions are detected in the SnTe layer, while the cap layer contributes with trivial fermions, protecting SnTe against deterioration due to exposure to the atmosphere.
- 23 May 2024
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 135 (20)
Open AccessDetection of Dirac fermions in capped SnTe film via magnetotransport measurements
In this work, we present the investigation of the magnetotransport properties of a capped SnTe film, grown by molecular beam epitaxy, using Shubnikov–de Haas oscillations for the detection of Dirac fermions. The cap layer used was a 10 nm thick Sn0.98Eu0.02Te film, which can also contribute to the transport such that it is mandatory to isolate its contribution from the electrical transport measured in the sample. To separate the contribution from both layers, photoconductivity measurements were performed. A detailed analysis of the Shubnikov–de Haas oscillations is carried out using theoretical expressions and building the Landau-level indexation. We found that Dirac fermions are detected in the SnTe layer, while the cap layer contributes with trivial fermions, protecting SnTe against deterioration due to exposure to the atmosphere.
- Open Access
- 15 December 2023
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
- Vol. 9 (50) , eadj4074
Observation of interplay between phonon chirality and electronic band topology
The recently demonstrated chiral modes of lattice motion carry angular momentum and therefore directly couple to magnetic fields. Notably, their magnetic moments are predicted to be strongly influenced by electronic contributions. Here, we have studied the magnetic response of transverse optical phonons in a set of Pb 1− x Sn x Te films, which is a topological crystalline insulator for x > 0.32 and has a ferroelectric transition at an x -dependent critical temperature. Polarization-dependent terahertz magnetospectroscopy measurements revealed Zeeman splittings and diamagnetic shifts, demonstrating a large phonon magnetic moment. Films in the topological phase exhibited phonon magnetic moment values that were larger than those in the topologically trivial samples by two orders of magnitude. Furthermore, the sign of the effective phonon g -factor was opposite in the two phases, a signature of the topological transition according to our model. These results strongly indicate the existence of interplay between the magnetic properties of chiral phonons and the topology of the electronic band structure.
- 15 December 2023
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
- Vol. 9 (50) , eadj4074
Open AccessObservation of interplay between phonon chirality and electronic band topology
The recently demonstrated chiral modes of lattice motion carry angular momentum and therefore directly couple to magnetic fields. Notably, their magnetic moments are predicted to be strongly influenced by electronic contributions. Here, we have studied the magnetic response of transverse optical phonons in a set of Pb 1− x Sn x Te films, which is a topological crystalline insulator for x > 0.32 and has a ferroelectric transition at an x -dependent critical temperature. Polarization-dependent terahertz magnetospectroscopy measurements revealed Zeeman splittings and diamagnetic shifts, demonstrating a large phonon magnetic moment. Films in the topological phase exhibited phonon magnetic moment values that were larger than those in the topologically trivial samples by two orders of magnitude. Furthermore, the sign of the effective phonon g -factor was opposite in the two phases, a signature of the topological transition according to our model. These results strongly indicate the existence of interplay between the magnetic properties of chiral phonons and the topology of the electronic band structure.
- Open Access
Thickness-Dependent Terahertz Permittivity of Epitaxially Grown PbTe Thin Films
The exceptional thermoelectric properties of PbTe are believed to be associated with the incipient ferroelectricity of this material, which is caused by strong electron–phonon coupling that connects phononic and electronic dynamics. Here, we have used terahertz time-domain spectroscopy measurements to generate complex permittivity spectra for a set of epitaxially grown PbTe thin films with thicknesses between 100 nm and 500 nm at temperatures from 10 to 300 . Using a Drude–Lorentz model, we retrieved the physical parameters of both the phononic and electronic contributions to the THz permittivity. We observed a strong decrease, or softening, of the transverse optical phonon mode frequency with decreasing temperature, determining a thickness-independent negative ferroelectric-transition critical temperature, while we found a thickness-dependent anharmonic phonon decay lifetime. The electronic contribution to the permittivity was larger in thinner films, and both the carrier density and mobility increased with decreasing temperature in all films. Finally, we detected a thickness-dependent longitudinal optical phonon mode frequency, indicating the presence of plasmon–phonon coupling.Open AccessThickness-Dependent Terahertz Permittivity of Epitaxially Grown PbTe Thin Films
The exceptional thermoelectric properties of PbTe are believed to be associated with the incipient ferroelectricity of this material, which is caused by strong electron–phonon coupling that connects phononic and electronic dynamics. Here, we have used terahertz time-domain spectroscopy measurements to generate complex permittivity spectra for a set of epitaxially grown PbTe thin films with thicknesses between 100 nm and 500 nm at temperatures from 10 to 300 . Using a Drude–Lorentz model, we retrieved the physical parameters of both the phononic and electronic contributions to the THz permittivity. We observed a strong decrease, or softening, of the transverse optical phonon mode frequency with decreasing temperature, determining a thickness-independent negative ferroelectric-transition critical temperature, while we found a thickness-dependent anharmonic phonon decay lifetime. The electronic contribution to the permittivity was larger in thinner films, and both the carrier density and mobility increased with decreasing temperature in all films. Finally, we detected a thickness-dependent longitudinal optical phonon mode frequency, indicating the presence of plasmon–phonon coupling. - 16 May 2022
- Published by AIP Publishing in Applied Physics Letters
- Vol. 120 (20) , 203102
Weak antilocalization effect and multi-channel transport in SnTe quantum well
Magnetoresistance measurements were performed on a 30 nm-thick SnTe quantum well (QW) grown by molecular beam epitaxy on the BaF2 substrate in the temperature range of 1.9–50 K. The weak antilocalization (WAL) effect was observed at low temperatures and low magnetic fields as a result of the strong spin–orbit coupling present in the QW. Using the Hikami–Larkin–Nagaoka equation, we analyzed the experimental data and found that the WAL effect is not purely 2D but composed of 2D and 3D channels that exist within the QW structure. The spin–orbit and phase coherence mechanisms are also extracted, and a general view of the transport properties of the QW is also provided.
- 16 May 2022
- Published by AIP Publishing in Applied Physics Letters
- Vol. 120 (20) , 203102
Weak antilocalization effect and multi-channel transport in SnTe quantum well
Magnetoresistance measurements were performed on a 30 nm-thick SnTe quantum well (QW) grown by molecular beam epitaxy on the BaF2 substrate in the temperature range of 1.9–50 K. The weak antilocalization (WAL) effect was observed at low temperatures and low magnetic fields as a result of the strong spin–orbit coupling present in the QW. Using the Hikami–Larkin–Nagaoka equation, we analyzed the experimental data and found that the WAL effect is not purely 2D but composed of 2D and 3D channels that exist within the QW structure. The spin–orbit and phase coherence mechanisms are also extracted, and a general view of the transport properties of the QW is also provided.
- 25 February 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (8) , 085302
Properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth
We report here on the properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth at levels from 0% (undoped) to 0.15%. The undoped film exhibits a p-type character due to metal vacancies. As the doping level rises, the hole concentration reduces. At a level of 0.06%, the electrical character inverts to n-type and the electron density continues to increase for rising doping level up to 0.15%. This result demonstrates an effective extrinsic n-type doping of Pb0.5Sn0.5Te crystal with bismuth due to substitutional Bi atoms in metal sites. High-resolution x-ray diffraction and reciprocal space mapping show that fully relaxed high-quality films are obtained. A pristine (111) film surface is revealed after removal of the Te cover layer using a method combining Ar+ sputtering and thermal desorption. Angle-resolved photoemission spectroscopy (ARPES) data acquired at 30 K near the point of the undoped film surface show a parabolic-like dispersion of the bulk valence band close to the Fermi level. Now, the ARPES data for a sample doped with 0.1% of Bi reveal that the chemical potential is shifted by 40 meV upwards in the direction of the conduction band. The ARPES results also indicate that there might be a discrepancy between surface and bulk chemical potential in the doped sample. This divergence suggests that Te atoms diffuse into the surface during the thermal process to desorb the protective layer, inverting the surface to p-type.- 25 February 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (8) , 085302
Properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth
We report here on the properties of topological crystalline insulator Pb0.5Sn0.5Te epitaxial films doped with bismuth at levels from 0% (undoped) to 0.15%. The undoped film exhibits a p-type character due to metal vacancies. As the doping level rises, the hole concentration reduces. At a level of 0.06%, the electrical character inverts to n-type and the electron density continues to increase for rising doping level up to 0.15%. This result demonstrates an effective extrinsic n-type doping of Pb0.5Sn0.5Te crystal with bismuth due to substitutional Bi atoms in metal sites. High-resolution x-ray diffraction and reciprocal space mapping show that fully relaxed high-quality films are obtained. A pristine (111) film surface is revealed after removal of the Te cover layer using a method combining Ar+ sputtering and thermal desorption. Angle-resolved photoemission spectroscopy (ARPES) data acquired at 30 K near the point of the undoped film surface show a parabolic-like dispersion of the bulk valence band close to the Fermi level. Now, the ARPES data for a sample doped with 0.1% of Bi reveal that the chemical potential is shifted by 40 meV upwards in the direction of the conduction band. The ARPES results also indicate that there might be a discrepancy between surface and bulk chemical potential in the doped sample. This divergence suggests that Te atoms diffuse into the surface during the thermal process to desorb the protective layer, inverting the surface to p-type.- 15 February 2022
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 128 (7) , 075901
Magnetic Control of Soft Chiral Phonons in PbTe
PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this phonon via polarization-dependent terahertz spectroscopy. We observed softening of this mode with decreasing temperature, indicative of incipient ferroelectricity, which we explain through a model including strong anharmonicity with a quartic displacement term. In magnetic fields up to 25 T, the phonon mode splits into two modes with opposite handedness, exhibiting circular dichroism. Their frequencies display Zeeman splitting together with an overall diamagnetic shift with increasing magnetic field. Using a group-theoretical approach, we demonstrate that these observations are the result of magnetic field-induced morphic changes in the crystal symmetries through the Lorentz force exerted on the lattice ions. Thus, our Letter reveals a novel process of controlling phonon properties in a soft ionic lattice by a strong magnetic field.
- 15 February 2022
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 128 (7) , 075901
Magnetic Control of Soft Chiral Phonons in PbTe
PbTe crystals have a soft transverse optical phonon mode in the terahertz frequency range, which is known to efficiently decay into heat-carrying acoustic phonons, resulting in anomalously low thermal conductivity. Here, we studied this phonon via polarization-dependent terahertz spectroscopy. We observed softening of this mode with decreasing temperature, indicative of incipient ferroelectricity, which we explain through a model including strong anharmonicity with a quartic displacement term. In magnetic fields up to 25 T, the phonon mode splits into two modes with opposite handedness, exhibiting circular dichroism. Their frequencies display Zeeman splitting together with an overall diamagnetic shift with increasing magnetic field. Using a group-theoretical approach, we demonstrate that these observations are the result of magnetic field-induced morphic changes in the crystal symmetries through the Lorentz force exerted on the lattice ions. Thus, our Letter reveals a novel process of controlling phonon properties in a soft ionic lattice by a strong magnetic field.
- 25 January 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (4) , 043903
Bound photoinduced giant spin polaron in EuTe
Previously, we showed that at low temperatures and very low excitation powers, EuTe displays band-edge photoluminescence with a well-resolved phonon structure, the so-called band, which is associated with the recombination of giant spin polarons (SPs) of magnetic moments of several hundred Bohr magnetons. Here, we investigate the band both experimentally and by Monte Carlo simulations. Results indicate that the SPs are bound to defects, with a localization energy of 0.29 eV. The density of defects harboring the SPs is estimated to be cm .- 25 January 2022
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 131 (4) , 043903
Bound photoinduced giant spin polaron in EuTe
Previously, we showed that at low temperatures and very low excitation powers, EuTe displays band-edge photoluminescence with a well-resolved phonon structure, the so-called band, which is associated with the recombination of giant spin polarons (SPs) of magnetic moments of several hundred Bohr magnetons. Here, we investigate the band both experimentally and by Monte Carlo simulations. Results indicate that the SPs are bound to defects, with a localization energy of 0.29 eV. The density of defects harboring the SPs is estimated to be cm .