György Molnár
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
György Molnár has a total of 88 co-authors. Here are the top co-authors by number of shared publications:
- András Pálinkás
Centre for Energy Research, Institute of Technical Physics and Materials Science, 1121 Budapest, Hungary
4 shared publications - Gábor Piszter
Institute of Technical Physics and Materials Science, Centre for Energy Research, 29-33 Konkoly Thege Miklós St., 1121 Budapest, Hungary
4 shared publications - János Volk
Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege M. út 29–33, 1121 Budapest, Hungary
4 shared publications - Zoltan Osvath
Centre for Energy Research, Institute of Technical Physics and Materials Science, P.O. Box 49, 1525 Budapest, Hungary
4 shared publications - Judit Budai
ELI ALPS, ELI-HU Non-Profit Ltd., 6728 Szeged, Hungary
3 shared publications - László Pósa
Department of Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rkp. 3, H-1111 Budapest, Hungary
3 shared publications
Latest Publications
- Open Access
- 23 September 2025
- Published by Elsevier in Surfaces and Interfaces
- Vol. 74
Strain-induced modulation of the local conductance in MoS2 layers on gold nanoparticles
- 23 September 2025
- Published by Elsevier in Surfaces and Interfaces
- Vol. 74
Open AccessStrain-induced modulation of the local conductance in MoS2 layers on gold nanoparticles
- Open Access
- 8 August 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (33) , 21966-21974
Picosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
- 8 August 2024
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 18 (33) , 21966-21974
Open AccessPicosecond Femtojoule Resistive Switching in Nanoscale VO2 Memristors
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiting device-level functional complexity at the lowest possible energy consumption. The dynamics of the Mott transition in correlated electron oxides, such as vanadium dioxide, has been identified as a rich and reliable source of such functional complexity. However, its full potential in high-speed and low-power operation has been largely unexplored. We fabricated nanoscale VO2 devices embedded in a broadband test circuit to study the speed and energy limitations of their resistive switching operation. Our picosecond time-resolution, real-time resistive switching experiments and numerical simulations demonstrate that tunable low-resistance states can be set by the application of 20 ps long, <1.7 V amplitude voltage pulses at 15 ps incubation times and switching energies starting from a few femtojoule. Moreover, we demonstrate that at nanometer-scale device sizes not only the electric field induced insulator-to-metal transition but also the thermal conduction limited metal-to-insulator transition can take place at time scales of 100s of picoseconds. These orders of magnitude breakthroughs can be utilized to design high-speed and low-power dynamical circuits for a plethora of neuromorphic computing applications from pattern recognition to numerical optimization.
- Open Access
Hybrid Bio-Nanocomposites by Integrating Nanoscale Au in Butterfly Scales Colored by Photonic Nanoarchitectures
Plasmonic metallic nanoparticles, like Au, can be used to tune the optical properties of photonic nanoarchitectures occurring in butterfly wing scales possessing structural color. The effect of the nanoscale Au depends on the location and the amount deposited in the chitin-based photonic nanoarchitecture. The following three types of Au introduction methods were compared regarding the structural and optical properties of the resulting hybrid bio-nanocomposites: (i) growth of Au nanoparticles inside the nanopores of butterfly wing scales by a light-induced in situ chemical reduction of HAuCl4 in aqueous solution containing sodium citrate, as a new procedure we have developed, (ii) drop-drying of the aqueous Au sol formed during procedure (i) in the bulk liquid phase, and (iii) physical vapor deposition of Au thin film onto the butterfly wing. We investigated all three methods at two different Au concentrations on the wings of laboratory-bred blue-colored male Polyommatus icarus butterflies and characterized the optical properties of the resulting hybrid bio-nanocomposites. We found that the drop-drying and the in situ growth produced comparable redshift in the spectral position of the reflectance maximum associated with the chitin-based photonic nanoarchitecture in the wing scales, while the 5 nm or 15 nm thick Au layers vacuum deposited onto the butterfly wing behaved like an optical filter, without inducing spectral shift. The in situ growth in the photonic nanoarchitecture under intense illumination produced uniform Au nanoparticles located in the pores of the biological template, which is more advantageous for further applications. An additional benefit of this method is that the Au nanoparticles do not aggregate on drying, like in the case of drop-drying of preformed Au nanoparticles from the citrate-stabilized sol.
Open AccessHybrid Bio-Nanocomposites by Integrating Nanoscale Au in Butterfly Scales Colored by Photonic Nanoarchitectures
Plasmonic metallic nanoparticles, like Au, can be used to tune the optical properties of photonic nanoarchitectures occurring in butterfly wing scales possessing structural color. The effect of the nanoscale Au depends on the location and the amount deposited in the chitin-based photonic nanoarchitecture. The following three types of Au introduction methods were compared regarding the structural and optical properties of the resulting hybrid bio-nanocomposites: (i) growth of Au nanoparticles inside the nanopores of butterfly wing scales by a light-induced in situ chemical reduction of HAuCl4 in aqueous solution containing sodium citrate, as a new procedure we have developed, (ii) drop-drying of the aqueous Au sol formed during procedure (i) in the bulk liquid phase, and (iii) physical vapor deposition of Au thin film onto the butterfly wing. We investigated all three methods at two different Au concentrations on the wings of laboratory-bred blue-colored male Polyommatus icarus butterflies and characterized the optical properties of the resulting hybrid bio-nanocomposites. We found that the drop-drying and the in situ growth produced comparable redshift in the spectral position of the reflectance maximum associated with the chitin-based photonic nanoarchitecture in the wing scales, while the 5 nm or 15 nm thick Au layers vacuum deposited onto the butterfly wing behaved like an optical filter, without inducing spectral shift. The in situ growth in the photonic nanoarchitecture under intense illumination produced uniform Au nanoparticles located in the pores of the biological template, which is more advantageous for further applications. An additional benefit of this method is that the Au nanoparticles do not aggregate on drying, like in the case of drop-drying of preformed Au nanoparticles from the citrate-stabilized sol.
- Open Access
- 25 May 2023
- Published by American Chemical Society (ACS) in ACS Applied Nano Materials
- Vol. 6 (11) , 9137-9147
Interplay of Thermal and Electronic Effects in the Mott Transition of Nanosized VO2 Phase Change Memory Devices
- 25 May 2023
- Published by American Chemical Society (ACS) in ACS Applied Nano Materials
- Vol. 6 (11) , 9137-9147
Open AccessInterplay of Thermal and Electronic Effects in the Mott Transition of Nanosized VO2 Phase Change Memory Devices
- Open Access
- 1 December 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (23) , 4276
Spacer Layer Thickness Dependence of the Giant Magnetoresistance in Electrodeposited Ni-Co/Cu Multilayers
Electrodeposited Ni65Co35/Cu multilayers were prepared with Cu spacer layer thicknesses between 0.5 nm and 7 nm. Their structure and magnetic and magnetoresistance properties were investigated. An important feature was that the Cu layers were deposited at the electrochemically optimized Cu deposition potential, ensuring a reliable control of the spacer layer thickness to reveal the true evolution of the giant magnetoresistance (GMR). X-ray diffraction indicated satellite reflections, demonstrating the highly coherent growth of these multilayer stacks. All of the multilayers exhibited a GMR effect, the magnitude of which did not show an oscillatory behavior with spacer layer thickness, just a steep rise of GMR around 1.5 nm and then, after 3 nm, it remained nearly constant, with a value around 4%. The high relative remanence of the magnetization hinted at the lack of an antiferromagnetic coupling between the magnetic layers, explaining the absence of oscillatory GMR. The occurrence of GMR can be attributed to the fact that, for spacer layer thicknesses above about 1.5 nm, the adjacent magnetic layers become uncoupled and their magnetization orientation is random, giving rise to a GMR effect. The coercive field and magnetoresistance peak field data also corroborate this picture: with increasing spacer layer thickness, both parameters progressively approached values characteristic of individual magnetic layers. At the end, a critical analysis of previously reported GMR data on electrodeposited Ni-Co/Cu multilayers is provided in view of the present results. A discussion of the layer formation processes in electrodeposited multilayers is also included, together with a comparison with physically deposited multilayers.
- 1 December 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (23) , 4276
Open AccessSpacer Layer Thickness Dependence of the Giant Magnetoresistance in Electrodeposited Ni-Co/Cu Multilayers
Electrodeposited Ni65Co35/Cu multilayers were prepared with Cu spacer layer thicknesses between 0.5 nm and 7 nm. Their structure and magnetic and magnetoresistance properties were investigated. An important feature was that the Cu layers were deposited at the electrochemically optimized Cu deposition potential, ensuring a reliable control of the spacer layer thickness to reveal the true evolution of the giant magnetoresistance (GMR). X-ray diffraction indicated satellite reflections, demonstrating the highly coherent growth of these multilayer stacks. All of the multilayers exhibited a GMR effect, the magnitude of which did not show an oscillatory behavior with spacer layer thickness, just a steep rise of GMR around 1.5 nm and then, after 3 nm, it remained nearly constant, with a value around 4%. The high relative remanence of the magnetization hinted at the lack of an antiferromagnetic coupling between the magnetic layers, explaining the absence of oscillatory GMR. The occurrence of GMR can be attributed to the fact that, for spacer layer thicknesses above about 1.5 nm, the adjacent magnetic layers become uncoupled and their magnetization orientation is random, giving rise to a GMR effect. The coercive field and magnetoresistance peak field data also corroborate this picture: with increasing spacer layer thickness, both parameters progressively approached values characteristic of individual magnetic layers. At the end, a critical analysis of previously reported GMR data on electrodeposited Ni-Co/Cu multilayers is provided in view of the present results. A discussion of the layer formation processes in electrodeposited multilayers is also included, together with a comparison with physically deposited multilayers.
- Open Access
- 19 July 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (14) , 2473
Graphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing
Graphene-covered silver nanoparticles were prepared directly on highly oriented pyrolytic graphite substrates and characterized by atomic force microscopy. UV–Vis reflectance spectroscopy was used to measure the shift in the local surface plasmon resonance (LSPR) upon exposure to acetone, ethanol, 2-propanol, toluene, and water vapor. The optical responses were found to be substance-specific, as also demonstrated by principal component analysis. Point defects were introduced in the structure of the graphene overlayer by O2 plasma. The LSPR was affected by the plasma treatment, but it was completely recovered using subsequent annealing. It was found that the presence of defects increased the response for toluene and water while decreasing it for acetone.
- 19 July 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (14) , 2473
Open AccessGraphene-Encapsulated Silver Nanoparticles for Plasmonic Vapor Sensing
Graphene-covered silver nanoparticles were prepared directly on highly oriented pyrolytic graphite substrates and characterized by atomic force microscopy. UV–Vis reflectance spectroscopy was used to measure the shift in the local surface plasmon resonance (LSPR) upon exposure to acetone, ethanol, 2-propanol, toluene, and water vapor. The optical responses were found to be substance-specific, as also demonstrated by principal component analysis. Point defects were introduced in the structure of the graphene overlayer by O2 plasma. The LSPR was affected by the plasma treatment, but it was completely recovered using subsequent annealing. It was found that the presence of defects increased the response for toluene and water while decreasing it for acetone.
- 21 June 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1
Light-Field-Driven Current Control in Dielectrics with pJ-Level Laser Pulses at 80 MHz Repetition Rate
Solid-state devices capable to react on the sub-cycle evolution of optical fields can pave the way towards petahertz electronics or provide new diagnostic devices for few-cycle lasers [1] . Such devices might rely on an effect of a transient metallization of wide-bandgap materials demonstrated in dielectrics [2] and semiconductors [3] . The observation of optical current control so far has been limited to millijoule-class laser systems which hinders the development towards the miniaturization and mass availability of the potential devices as these high-pulse-energy systems are bulky and have low repetition rate. Here, we report on the transient metallization and CEP-driven current control induced in a compact setup at 80 MHz repetition rate in dielectric SiO 2 , HfO 2 and semiconducting GaN with pJ-class pulses for the first time to our knowledge.
- 21 June 2021
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1
Light-Field-Driven Current Control in Dielectrics with pJ-Level Laser Pulses at 80 MHz Repetition Rate
Solid-state devices capable to react on the sub-cycle evolution of optical fields can pave the way towards petahertz electronics or provide new diagnostic devices for few-cycle lasers [1] . Such devices might rely on an effect of a transient metallization of wide-bandgap materials demonstrated in dielectrics [2] and semiconductors [3] . The observation of optical current control so far has been limited to millijoule-class laser systems which hinders the development towards the miniaturization and mass availability of the potential devices as these high-pulse-energy systems are bulky and have low repetition rate. Here, we report on the transient metallization and CEP-driven current control induced in a compact setup at 80 MHz repetition rate in dielectric SiO 2 , HfO 2 and semiconducting GaN with pJ-class pulses for the first time to our knowledge.
- Open Access
- 15 January 2021
- Published by MDPI AG in Nanomaterials
- Vol. 11 (1) , 212
A Rational Fabrication Method for Low Switching-Temperature VO2
Due to its remarkable switching effect in electrical and optical properties, VO is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with a rational deposition technique, is still challenging. Here, we propose and optimize a simple fabrication method for VO rich layers by the oxidation of metallic vanadium in atmospheric air. It was shown that a sufficiently broad annealing time window of 3.0–3.5 h can be obtained at an optimal oxidation temperature of 400 °C. The presence of VO was detected by selected area diffraction in a transmission electron microscope. According to the temperature dependent electrical measurements, the resistance contrast (R30 °C/R100 °C) varied between 44 and 68, whereas the optical switching was confirmed using in situ spectroscopic ellipsometric measurement by monitoring the complex refractive indices. The obtained phase transition temperature, both for the electrical resistance and for the ellipsometric angles, was found to be 49 ± 7 °C, i.e., significantly lower than that of the bulk VO2 of 68 ± 6 °C.- 15 January 2021
- Published by MDPI AG in Nanomaterials
- Vol. 11 (1) , 212
Open AccessA Rational Fabrication Method for Low Switching-Temperature VO2
Due to its remarkable switching effect in electrical and optical properties, VO is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with a rational deposition technique, is still challenging. Here, we propose and optimize a simple fabrication method for VO rich layers by the oxidation of metallic vanadium in atmospheric air. It was shown that a sufficiently broad annealing time window of 3.0–3.5 h can be obtained at an optimal oxidation temperature of 400 °C. The presence of VO was detected by selected area diffraction in a transmission electron microscope. According to the temperature dependent electrical measurements, the resistance contrast (R30 °C/R100 °C) varied between 44 and 68, whereas the optical switching was confirmed using in situ spectroscopic ellipsometric measurement by monitoring the complex refractive indices. The obtained phase transition temperature, both for the electrical resistance and for the ellipsometric angles, was found to be 49 ± 7 °C, i.e., significantly lower than that of the bulk VO2 of 68 ± 6 °C. - 1 January 2021
- Published by Optica Publishing Group
- p. FTh4B.5
Light-Field-Driven Current Control in Dielectrics with pJ-Level Laser Pulses at 80 MHz Repetition Rate
We report detection of optically induced lightwave-driven currents in GaN, HfO2 and SiO2 achieved with laser oscillator pulses (80 MHz repetition rate). We demonstrate sensitivity of the current direction on the CEP of the pulses.
- 1 January 2021
- Published by Optica Publishing Group
- p. FTh4B.5
Light-Field-Driven Current Control in Dielectrics with pJ-Level Laser Pulses at 80 MHz Repetition Rate
We report detection of optically induced lightwave-driven currents in GaN, HfO2 and SiO2 achieved with laser oscillator pulses (80 MHz repetition rate). We demonstrate sensitivity of the current direction on the CEP of the pulses.
- Open Access
- 1 January 2021
- Published by Óbuda University in Acta Polytechnica Hungarica
- Vol. 18 (1) , 7-12
Preface
- 1 January 2021
- Published by Óbuda University in Acta Polytechnica Hungarica
- Vol. 18 (1) , 7-12
Open AccessPreface