SMSakib Muhtadi
Sakib Muhtadi
*This is an algorithmically generated author record based on publicly available information.
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Sakib Muhtadi has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
Antwon Coleman
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publicationAsif Khan
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publicationFatima Asif
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publicationGrigory Simin
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publicationMvs Chandrashekhar
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publicationSeong Mo Hwang
Department of Electrical Engineering, University of South Carolina, Columbia, SC, USA
1 shared publication
Latest Publications
- 5 May 2017
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (7) , 914-917
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
We report Al0.85 Ga0.15 N/Al0.65 Ga0.35N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as$1800~\Omega /\Box $ . Devices with the source–drain spacing of$5.5~\mu \text{m}$ and a gate length of 1.8$\mu \text{m}$ exhibited peak drain–currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-$\mu \text{m}$ thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.- 5 May 2017
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (7) , 914-917
High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates
We report Al0.85 Ga0.15 N/Al0.65 Ga0.35N high-electron mobility transistors on low-defect AlN buffer layers over basal plane sapphire substrates. A new epilayer design consisting of a doped barrier layer yielded sheet resistivity values as low as$1800~\Omega /\Box $ . Devices with the source–drain spacing of$5.5~\mu \text{m}$ and a gate length of 1.8$\mu \text{m}$ exhibited peak drain–currents as high as 250 mA/mm at a gate bias of +4 V. We also show that the 3-$\mu \text{m}$ thick low-defect AlN buffer layers over sapphire to provide sufficient thermal conduction which enables stable device operation up to at least 40 V at 250 mA/mm with no current droop.