Nicola Zema
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Nicola Zema has a total of 800 co-authors. Here are the top co-authors by number of shared publications:
- Stefano Turchini
CNR-ISM, Area Della Ricerca di Roma Tor Vergata 11 , Via del Fosso del Cavaliere 100, Roma
52 shared publications - Daniele Catone
Istituto di Struttura della Materia -CNR (ISM-CNR) EuroFEL Support Laboratory (EFSL) Via del Fosso del Cavaliere 100 00133 Rome Italy
34 shared publications - Giorgio Contini
National Research Council (CNR), Institute of Structure of Matter (ISM), via del Fosso del Cavaliere, 100, Rome, Italy, 00133
25 shared publications T. Prosperi
Istituto Struttura della Materia-CNR (ISM-CNR), Via del Fosso del Cavaliere 100, 00133, Roma, Italy
22 shared publicationsM. Piacentini
Dipartimento di Energetica, Universitá di Roma, “La Sapienza,” Rome, Italy and Istituto Nazionale di Fisica della Materia, Unità di Roma1, Rome, Italy
16 shared publications- Mauro Stener
Università di Trieste
12 shared publications
Latest Publications
- Open Access
- 22 May 2026
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 164 (20)
Evidence of orbital mixing upon ionization via Cooper minimum photoelectron dynamics in epichlorohydrin. Experiment and theory
A peculiar electron correlation effect, leading to orbital rotation upon ionization, theoretically predicted long ago, was never experimentally characterized. The effect is expected to appear prominently in the photoionization of chiral molecules, due to the lack of symmetry constraints on wave-function mixing. This is observed to have a profound effect on the photoelectron dynamics, as here demonstrated by investigating the β asymmetry parameter and partial cross-section observables in the Cl 3p Cooper minimum region of epichlorohydrin, a chiral prototype system. Angle-resolved photoelectron spectroscopy with tunable synchrotron radiation allowed measuring Cooper minimum β oscillations, which were observed for solely two valence photoionization channels. The nature and number of channels exhibiting such dynamical behavior, along with the extent of the observed oscillation amplitudes, could not be accounted for by predictions based on Hartree–Fock and density functional theory. These features could only be explained by incorporating correlation effects, which mix single-hole configurations of identical symmetry, in the characterization of the four lowest-lying molecular cation states via equation-of-motion coupled-cluster-singles-and-doubles Dyson orbitals.
- 22 May 2026
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 164 (20)
Open AccessEvidence of orbital mixing upon ionization via Cooper minimum photoelectron dynamics in epichlorohydrin. Experiment and theory
A peculiar electron correlation effect, leading to orbital rotation upon ionization, theoretically predicted long ago, was never experimentally characterized. The effect is expected to appear prominently in the photoionization of chiral molecules, due to the lack of symmetry constraints on wave-function mixing. This is observed to have a profound effect on the photoelectron dynamics, as here demonstrated by investigating the β asymmetry parameter and partial cross-section observables in the Cl 3p Cooper minimum region of epichlorohydrin, a chiral prototype system. Angle-resolved photoelectron spectroscopy with tunable synchrotron radiation allowed measuring Cooper minimum β oscillations, which were observed for solely two valence photoionization channels. The nature and number of channels exhibiting such dynamical behavior, along with the extent of the observed oscillation amplitudes, could not be accounted for by predictions based on Hartree–Fock and density functional theory. These features could only be explained by incorporating correlation effects, which mix single-hole configurations of identical symmetry, in the characterization of the four lowest-lying molecular cation states via equation-of-motion coupled-cluster-singles-and-doubles Dyson orbitals.
- Open Access
- 7 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 26 (12) , 18356-18365
Characterization of Hydrogenated Amorphous Silicon Detectors With Clinical Photon and Electron Beams
Flexible hydrogenated amorphous silicon (a-Si:H) detectors are attractive candidates for clinical dosimetry, particularly for applications requiring lightweight devices and operation without external bias. In this work, three flexible a-Si:H detector architectures are experimentally compared under clinical photon and electron beams: a conventional n-i-p diode, a charge selective contact (CSC) detector, and a very thin p-i-n diode. All detectors show excellent dose linearity under both irradiation modalities. However, large differences in sensitivity are observed at zero bias, exceeding two orders of magnitude across architectures. The conventional n-i-p device shows a response that is limited by the internal electric field, while CSC and very thin p-i-n detectors achieve sensitivities in the pC/cGy range without applied bias. Electron beams yield higher charge per unit dose than photons, compatible with a larger local energy deposition in the active layer. The results demonstrate that sensitivity in flexible a-Si:H dosimeters is governed by contact design and intrinsic layer thickness rather than by active volume alone. Taken together, the present results suggest that combining charge selective contacts with thinner intrinsic layers may represent a promising strategy to further enhance zero-bias sensitivity. These findings provide clear design guidelines for the development of flexible dosimeters for surface and transmission measurements in advanced radiotherapy.
- 7 May 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 26 (12) , 18356-18365
Open AccessCharacterization of Hydrogenated Amorphous Silicon Detectors With Clinical Photon and Electron Beams
Flexible hydrogenated amorphous silicon (a-Si:H) detectors are attractive candidates for clinical dosimetry, particularly for applications requiring lightweight devices and operation without external bias. In this work, three flexible a-Si:H detector architectures are experimentally compared under clinical photon and electron beams: a conventional n-i-p diode, a charge selective contact (CSC) detector, and a very thin p-i-n diode. All detectors show excellent dose linearity under both irradiation modalities. However, large differences in sensitivity are observed at zero bias, exceeding two orders of magnitude across architectures. The conventional n-i-p device shows a response that is limited by the internal electric field, while CSC and very thin p-i-n detectors achieve sensitivities in the pC/cGy range without applied bias. Electron beams yield higher charge per unit dose than photons, compatible with a larger local energy deposition in the active layer. The results demonstrate that sensitivity in flexible a-Si:H dosimeters is governed by contact design and intrinsic layer thickness rather than by active volume alone. Taken together, the present results suggest that combining charge selective contacts with thinner intrinsic layers may represent a promising strategy to further enhance zero-bias sensitivity. These findings provide clear design guidelines for the development of flexible dosimeters for surface and transmission measurements in advanced radiotherapy.
- Open Access
- 3 December 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 10597
On-surface synthesis of tailored organic platforms for single metal atoms
Recent advances in nanomaterials have pushed the boundaries of nanoscale fabrication to the limit of single atoms, particularly in heterogeneous catalysis. Single atom catalysts, comprising minute amounts of transition metals dispersed on inert substrates, have emerged as prominent materials in this domain. However, overcoming the tendency of these single atoms to cluster beyond cryogenic temperatures and precisely arranging them on surfaces with desired local environments pose significant challenges. Employing organic templates for orchestrating and modulating the activity of single atoms holds promise. Here, we introduce an on-surface synthesis of a single atom platform wherein atoms are firmly anchored to specific coordination sites distributed along carbon-based polymers. These platforms exhibit atomic-level structural precision and stability, even at elevated temperatures, offering arrays of undercoordinated metal centers as model active sites for single-atom catalysis. We theoretically reveal the pronounced ability of these architectures to coordinate several gas molecules and experimentally visualize their interaction with CO and CO 2 . Fine-tuning the structure and properties of the coordination sites offers unparalleled flexibility in tailoring functionalities, thus opening avenues for previously untapped potential in catalytic applications.
- 3 December 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 10597
Open AccessOn-surface synthesis of tailored organic platforms for single metal atoms
Recent advances in nanomaterials have pushed the boundaries of nanoscale fabrication to the limit of single atoms, particularly in heterogeneous catalysis. Single atom catalysts, comprising minute amounts of transition metals dispersed on inert substrates, have emerged as prominent materials in this domain. However, overcoming the tendency of these single atoms to cluster beyond cryogenic temperatures and precisely arranging them on surfaces with desired local environments pose significant challenges. Employing organic templates for orchestrating and modulating the activity of single atoms holds promise. Here, we introduce an on-surface synthesis of a single atom platform wherein atoms are firmly anchored to specific coordination sites distributed along carbon-based polymers. These platforms exhibit atomic-level structural precision and stability, even at elevated temperatures, offering arrays of undercoordinated metal centers as model active sites for single-atom catalysis. We theoretically reveal the pronounced ability of these architectures to coordinate several gas molecules and experimentally visualize their interaction with CO and CO 2 . Fine-tuning the structure and properties of the coordination sites offers unparalleled flexibility in tailoring functionalities, thus opening avenues for previously untapped potential in catalytic applications.
- 9 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 72 (12) , 3824-3829
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 μm thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 μm thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
- 9 October 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 72 (12) , 3824-3829
Proton Irradiation on Hydrogenated Amorphous Silicon Flexible Devices
Radiation damage tests in hydrogenated amorphous silicon (a-Si:H) flexible flux and dose-measuring devices have been performed with a 3 MeV proton beam, to evaluate combined displacement and total ionizing dose damage. The tested devices had two different configurations and thicknesses. The first device was a 2 μm thick n-i-p diode having a 5 mm x 5 mm area. The second device was a 5 μm thick charge selective contact detector having the same area. Both the devices were deposited on a flexible polyimide substrate and were irradiated up to the fluence of 1016 neq/cm2. The response to different proton fluxes has been measured before irradiation and after irradiation at 1016 neq/cm2 for charge-selective contacts and n-i-p devices. The effect of annealing for partial performance recovery at 100°C for 12 hours was also studied and a final characterization on annealed devices was performed. This test is the first combined displacement and total ionizing dose test on flexible a-Si:H devices.
- Open Access
Hydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements
Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (7 to 2.49 × 1010 p/(cm2 s).
Open AccessHydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements
Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. For this reason, a thin (7 to 2.49 × 1010 p/(cm2 s).
- Open Access
- 25 September 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (19) , 1551
Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.
- 25 September 2024
- Published by MDPI AG in Nanomaterials
- Vol. 14 (19) , 1551
Open AccessMobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance
This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked interest in its application for radiation detection in both physics and medicine. Although amorphous silicon (a-Si) is inherently a highly defective material, hydrogenation significantly reduces defect density, enabling its use in radiation detector devices. Spectroscopic measurements provide insights into the intricate relationship between the structure and electronic properties of a-Si, enhancing our understanding of how specific configurations, such as the choice of substrate, can markedly influence detector performance. In this study, we compare the performance of a-Si detectors deposited on two different substrates: crystalline silicon (c-Si) and flexible Kapton. Our findings suggest that detectors deposited on Kapton exhibit reduced sensitivity, despite having comparable noise and leakage current levels to those on crystalline silicon. We hypothesize that this discrepancy may be attributed to the substrate material, differences in film morphology, and/or the alignment of energy levels. Further measurements are planned to substantiate these hypotheses.
- Open Access
- 26 July 2024
- Published by IOP Publishing in Physics in Medicine & Biology
- Vol. 69 (15) , 155022
Dosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors
Objective. Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silicon detectors for MRT dosimetry, presenting a novel combination of flexible, ultra-thin and radiation-hard features. Approach. Two detectors are explored: an n-type/intrinsic/p-type planar diode (NIP) and an NIP with an additional charge selective layer (NIP + CSC). Results. The sensitivity of the NIP + CSC detector was greater than the NIP detector for all measurement conditions. At 1 V and 0 kGy under the 3T Cu–Cu synchrotron broadbeam, the NIP + CSC detector sensitivity of (7.76 ± 0.01) pC cGy−1 outperformed the NIP detector sensitivity of (3.55 ± 0.23) pC cGy−1 by 219%. The energy dependence of both detectors matches closely to the attenuation coefficient ratio of silicon against water. Radiation damage measurements of both detectors out to 40 kGy revealed a higher radiation tolerance in the NIP detector compared to the NIP + CSC (17.2% and 33.5% degradations, respectively). Percentage depth dose profiles matched the PTW microDiamond detector’s performance to within ±6% for all beam filtrations except in 3T Al–Al due to energy dependence. The 3T Cu–Cu microbeam field profile was reconstructed and returned microbeam width and peak-to-peak values of (51 ± 1) μm and (405 ± 5) μm, respectively. The peak-to-valley dose ratio was measured as a function of depth and agrees within error to the values obtained with the PTW microDiamond. X-ray beam induced charge mapping of the detector revealed minimal dose perturbations from extra-cameral materials. Significance. The detectors are comparable to commercially available dosimeters for quality assurance in MRT. With added benefits of being micron-sized and possessing a flexible water-equivalent substrate, these detectors are attractive candidates for quality assurance, in-vivo dosimetry and in-line beam monitoring for MRT and FLASH therapy.
- 26 July 2024
- Published by IOP Publishing in Physics in Medicine & Biology
- Vol. 69 (15) , 155022
Open AccessDosimetry of microbeam radiotherapy by flexible hydrogenated amorphous silicon detectors
Objective. Detectors that can provide accurate dosimetry for microbeam radiation therapy (MRT) must possess intrinsic radiation hardness, a high dynamic range, and a micron-scale spatial resolution. In this work we characterize hydrogenated amorphous silicon detectors for MRT dosimetry, presenting a novel combination of flexible, ultra-thin and radiation-hard features. Approach. Two detectors are explored: an n-type/intrinsic/p-type planar diode (NIP) and an NIP with an additional charge selective layer (NIP + CSC). Results. The sensitivity of the NIP + CSC detector was greater than the NIP detector for all measurement conditions. At 1 V and 0 kGy under the 3T Cu–Cu synchrotron broadbeam, the NIP + CSC detector sensitivity of (7.76 ± 0.01) pC cGy−1 outperformed the NIP detector sensitivity of (3.55 ± 0.23) pC cGy−1 by 219%. The energy dependence of both detectors matches closely to the attenuation coefficient ratio of silicon against water. Radiation damage measurements of both detectors out to 40 kGy revealed a higher radiation tolerance in the NIP detector compared to the NIP + CSC (17.2% and 33.5% degradations, respectively). Percentage depth dose profiles matched the PTW microDiamond detector’s performance to within ±6% for all beam filtrations except in 3T Al–Al due to energy dependence. The 3T Cu–Cu microbeam field profile was reconstructed and returned microbeam width and peak-to-peak values of (51 ± 1) μm and (405 ± 5) μm, respectively. The peak-to-valley dose ratio was measured as a function of depth and agrees within error to the values obtained with the PTW microDiamond. X-ray beam induced charge mapping of the detector revealed minimal dose perturbations from extra-cameral materials. Significance. The detectors are comparable to commercially available dosimeters for quality assurance in MRT. With added benefits of being micron-sized and possessing a flexible water-equivalent substrate, these detectors are attractive candidates for quality assurance, in-vivo dosimetry and in-line beam monitoring for MRT and FLASH therapy.
- 22 February 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 24 (8) , 12466-12471
Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.
- 22 February 2024
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Journal
- Vol. 24 (8) , 12466-12471
Characterization of Hydrogenated Amorphous Silicon Sensors on Polyimide Flexible Substrate
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H sensors can be successfully utilized in dosimetry, beam monitoring for particle physics (x-ray, electron, gamma-ray and proton detection) and radiotherapy, radiation flux measurement for space applications (study of solar energetic particles and stellar events) and neutron flux measurements. In this paper we have studied the dosimetric x-ray response of n-i-p diodes deposited on Polyimide. We measured the linearity of the photocurrent response to x-rays versus dose-rate from which we have extracted the dosimetric x-ray sensitivity at various bias voltages. In particular low bias voltage operation has been studied to assess the high energy efficiency of these kind of sensor. A measurement of stability of x-ray response versus time has been shown. The effect of detectors annealing has been studied. Operation under bending at various bending radii is also shown.
- 12 January 2024
- Published by IOP Publishing in Journal of Physics B: Atomic, Molecular and Optical Physics
- Vol. 57 (1) , 015201
Electron and ion spectroscopy of camphor doped helium nanodroplets in the extreme UV and soft x-ray regime
We investigate the ionisation and fragmentation dynamics of free camphor molecules and camphor-doped helium nanodroplets by extreme ultraviolet (EUV) and soft x-ray photons using velocity map imaging combined with photoelectron-photoion coincidence (VMI-PEPICO) spectroscopy. We notably find that the Penning ionisation of camphor in He nanodroplets at h ν = 21.43 eV is soft with nearly identical Penning ionised electron spectra correlated to different molecular fragments. Further, fragmentation following ionisation at all photon energies exhibit a droplet-specific mass peak equivalent to the missing mass of CO, suggesting suppression of further fragmentation inside the droplet. This work reveals unusual features of photoionisation of organic molecules doped in He nanodroplet motivating further experimental and theoretical explorations.
- 12 January 2024
- Published by IOP Publishing in Journal of Physics B: Atomic, Molecular and Optical Physics
- Vol. 57 (1) , 015201
Electron and ion spectroscopy of camphor doped helium nanodroplets in the extreme UV and soft x-ray regime
We investigate the ionisation and fragmentation dynamics of free camphor molecules and camphor-doped helium nanodroplets by extreme ultraviolet (EUV) and soft x-ray photons using velocity map imaging combined with photoelectron-photoion coincidence (VMI-PEPICO) spectroscopy. We notably find that the Penning ionisation of camphor in He nanodroplets at h ν = 21.43 eV is soft with nearly identical Penning ionised electron spectra correlated to different molecular fragments. Further, fragmentation following ionisation at all photon energies exhibit a droplet-specific mass peak equivalent to the missing mass of CO, suggesting suppression of further fragmentation inside the droplet. This work reveals unusual features of photoionisation of organic molecules doped in He nanodroplet motivating further experimental and theoretical explorations.
- Open Access
- 6 October 2023
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 169
TCAD modelling of a-Si:H devices for particle detection applications
- 6 October 2023
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 169
Open AccessTCAD modelling of a-Si:H devices for particle detection applications