Fabio La Mattina
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Fabio La Mattina has a total of 162 co-authors. Here are the top co-authors by number of shared publications:
- Alexander Shengelaya
Department of Physics, Ivane Javakhishvili Tbilisi State University, Tbilisi, Georgia
7 shared publications H. Keller
Physik-Institut der Universität Zürich, Winterthurerstr. 190, CH-8057 Zürich, Switzerland
7 shared publicationsA. Maisuradze
Physik-Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
5 shared publicationsAyodhya N. Tiwari
Laboratory for Thin Films and Photovoltaics, Empa-Swiss Federal Laboratories for Materials Science and Technology, Ueberlandstrasse 129, 8600, Duebendorf, Switzerland
5 shared publications- Claudia Cancellieri
Laboratory for Joining Technologies and Corrosion Empa, Swiss Federal Laboratories for Materials Science and Technology Dübendorf Switzerland
5 shared publications - Rustem Khasanov
Kazan State Medical Academy – branch of the Russian Medical Academy of Continuing Professional Education
5 shared publications
Latest Publications
- Open Access
- 1 May 2026
- Published by Springer Nature in Welding in the World
- p. 1-5
Nanopaste sinter-bonding for thin-film transfer and integration
Over the last decades, the development of micro- and nanoparticle pastes (nanopastes) for sinter-bonding (sintering) has been a major research effort in the field of micro- and nanojoining, firstly of Ag-based pastes, and more recently also of Cu-based pastes. One classical application scenario is semiconductor die attach for power electronics, where sintering can provide bonds with superior temperature stability as well as thermal and electrical conductivity. A recently proposed novel application field is the use of sinter-bonding for transfer and integration of functional thin films: thin films and 2D materials can offer unique properties, e.g. for sensing, catalysis, and electronics. However, film manufacturing often requires distinct growth conditions. For subsequent film integration into a functional device, the films must be transferred and bonded to a suitable host structure. Current transfer methods often lead to film damage and/or insufficient bond qualities. In this work, we present sinter-bonding with nanopastes as a flexible and easy-to-use method to realise high-quality thin-film transfers and provide an in-depth discussion of the process steps and bonding mechanisms.
- 1 May 2026
- Published by Springer Nature in Welding in the World
- p. 1-5
Open AccessNanopaste sinter-bonding for thin-film transfer and integration
Over the last decades, the development of micro- and nanoparticle pastes (nanopastes) for sinter-bonding (sintering) has been a major research effort in the field of micro- and nanojoining, firstly of Ag-based pastes, and more recently also of Cu-based pastes. One classical application scenario is semiconductor die attach for power electronics, where sintering can provide bonds with superior temperature stability as well as thermal and electrical conductivity. A recently proposed novel application field is the use of sinter-bonding for transfer and integration of functional thin films: thin films and 2D materials can offer unique properties, e.g. for sensing, catalysis, and electronics. However, film manufacturing often requires distinct growth conditions. For subsequent film integration into a functional device, the films must be transferred and bonded to a suitable host structure. Current transfer methods often lead to film damage and/or insufficient bond qualities. In this work, we present sinter-bonding with nanopastes as a flexible and easy-to-use method to realise high-quality thin-film transfers and provide an in-depth discussion of the process steps and bonding mechanisms.
- Open Access
- 26 February 2025
- Published by Swiss Chemical Society in Chimia
- Vol. 79 (1-2) , 25-28
Extending Resonant Inelastic X-ray Scattering to Extreme Ultraviolet
We present α-Al2O3 XAS, XES and RIXS measurements across the Al L2/L3 edges at about 79 eV excitation energy. In the emission spectra, we identify two fluorescence peaks, corresponding to electronic transitions into the 2p core hole from mixed states of Al 3s and Al 3d character, both mixed with O 2p orbitals. Even if the XAS spectrum shows more than one resonance, surprisingly only one clear RIXS signal with energy loss equal to 10.7 eV is present in the data. Nevertheless, this allows us to tentatively extract from the measured high-resolution data the linewidths for fluorescence and RIXS transitions, with the latter being almost a factor of two smaller than the former.
- 26 February 2025
- Published by Swiss Chemical Society in Chimia
- Vol. 79 (1-2) , 25-28
Open AccessExtending Resonant Inelastic X-ray Scattering to Extreme Ultraviolet
We present α-Al2O3 XAS, XES and RIXS measurements across the Al L2/L3 edges at about 79 eV excitation energy. In the emission spectra, we identify two fluorescence peaks, corresponding to electronic transitions into the 2p core hole from mixed states of Al 3s and Al 3d character, both mixed with O 2p orbitals. Even if the XAS spectrum shows more than one resonance, surprisingly only one clear RIXS signal with energy loss equal to 10.7 eV is present in the data. Nevertheless, this allows us to tentatively extract from the measured high-resolution data the linewidths for fluorescence and RIXS transitions, with the latter being almost a factor of two smaller than the former.
- Open Access
- 13 August 2023
- Published by American Chemical Society (ACS) in ChemRxiv
Understanding the effects of transition metal intercalation on electronic and electrochemical properties of Ti3C2Tx MXene
MXenes are 2D transition metal carbides, nitrides, and/or carbonitrides, capable of intercalation by various cations through chemical or electrochemical means. Previous research has primarily focused on intercalating alkaline and alkaline earth cations, such as Li+, K+, Na+, Mg2+ or alkylammonium cations, into Ti3C2Tx MXenes. However, the impact of intercalated transition metal (TM) ions on the electronic and electrochemical properties of MXenes remains largely unexplored. In this study, we investigated the effects of pre-intercalated Cu ions on Ti3C2Tx MXenes and vice versa to gain a comprehensive understanding of how the electronic and electrochemical properties of both intercalated TM ion and MXene host are altered. Using in-situ X-ray absorption spectroscopy (XAS), we reveal changes in the oxidation states of intercalated Cu ions and Ti atoms during charging and their corresponding role in charge storage mechanisms. Our findings show that electronic coupling between Ti3C2Tx and Cu ions results in modified electrochemical and electronic properties compared to pristine Ti3C2Tx. These insights lay the foundation for the rational design and utilization of TM ion intercalants to tailor the properties of MXenes for various electrochemical systems and beyond.
- 13 August 2023
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessUnderstanding the effects of transition metal intercalation on electronic and electrochemical properties of Ti3C2Tx MXene
MXenes are 2D transition metal carbides, nitrides, and/or carbonitrides, capable of intercalation by various cations through chemical or electrochemical means. Previous research has primarily focused on intercalating alkaline and alkaline earth cations, such as Li+, K+, Na+, Mg2+ or alkylammonium cations, into Ti3C2Tx MXenes. However, the impact of intercalated transition metal (TM) ions on the electronic and electrochemical properties of MXenes remains largely unexplored. In this study, we investigated the effects of pre-intercalated Cu ions on Ti3C2Tx MXenes and vice versa to gain a comprehensive understanding of how the electronic and electrochemical properties of both intercalated TM ion and MXene host are altered. Using in-situ X-ray absorption spectroscopy (XAS), we reveal changes in the oxidation states of intercalated Cu ions and Ti atoms during charging and their corresponding role in charge storage mechanisms. Our findings show that electronic coupling between Ti3C2Tx and Cu ions results in modified electrochemical and electronic properties compared to pristine Ti3C2Tx. These insights lay the foundation for the rational design and utilization of TM ion intercalants to tailor the properties of MXenes for various electrochemical systems and beyond.
- Open Access
- 30 September 2022
- Published by Wiley in Advanced Materials Interfaces
- Vol. 10 (2)
Advanced Epitaxial Lift‐Off and Transfer Procedure for the Fabrication of High‐Quality Functional Oxide Membranes
In the past 5 years, the transfer of epitaxial oxide thin films has drawn a renewed interest in the scientific community. The major challenge in this technology is to minimize the appearance of extended bulk defects such as plastic deformations, cracks, and delamination, which are induced by the transfer process to a new host substrate. In this work, a procedure for the transfer of epitaxial oxide films where a rigid bond to the final host holder is obtained via a metallic Au/Ag bonding layer is presented. Here, the transfer of SrRuO3 (SRO) and SrRuO3/SrTiO3 (STO) epitaxial films grown on a water‐soluble Sr3Al2O6 sacrificial layer is reported. These epitaxial films are grown on a STO substrate and transferred onto a Si host substrate. Roughness values lower than 1nm are observed for the transferred SRO membranes. Cross‐section analysis shows straight interfaces without plastic deformation of the membranes. X‐ray diffraction rocking‐curve analysis evidences that mechanical damage is minimized and the membranes remain close to their initial quality. This procedure represents an important step forward in the development of advanced technologies for membrane transfer of epitaxial oxides and superstructures.
- 30 September 2022
- Published by Wiley in Advanced Materials Interfaces
- Vol. 10 (2)
Open AccessAdvanced Epitaxial Lift‐Off and Transfer Procedure for the Fabrication of High‐Quality Functional Oxide Membranes
In the past 5 years, the transfer of epitaxial oxide thin films has drawn a renewed interest in the scientific community. The major challenge in this technology is to minimize the appearance of extended bulk defects such as plastic deformations, cracks, and delamination, which are induced by the transfer process to a new host substrate. In this work, a procedure for the transfer of epitaxial oxide films where a rigid bond to the final host holder is obtained via a metallic Au/Ag bonding layer is presented. Here, the transfer of SrRuO3 (SRO) and SrRuO3/SrTiO3 (STO) epitaxial films grown on a water‐soluble Sr3Al2O6 sacrificial layer is reported. These epitaxial films are grown on a STO substrate and transferred onto a Si host substrate. Roughness values lower than 1nm are observed for the transferred SRO membranes. Cross‐section analysis shows straight interfaces without plastic deformation of the membranes. X‐ray diffraction rocking‐curve analysis evidences that mechanical damage is minimized and the membranes remain close to their initial quality. This procedure represents an important step forward in the development of advanced technologies for membrane transfer of epitaxial oxides and superstructures.
- Open Access
- 10 June 2022
- Published by Springer Nature in Journal of Superconductivity and Novel Magnetism
- Vol. 35 (7) , 1801-1805
Coulomb Interaction Engineering at YBa$_{2}$Cu$_3$O$_{7-\delta }$-SrTiO$_{3}$ InterfaceIt has been proposed by Müller and Shengelaya that underdoped ultrathin layers of copper-oxide high-temperature superconductors (HTSs) sandwiched between high-dielectric-constant insulator layers could manifest increased superconducting critical temperature $$T_c$$ . To check this hypothesis, we investigated structural and transport properties of YBa $$_{2}$$ Cu $$_{3}$$ O $$_{7-\delta }$$ (YBCO) thin films sandwiched between SrTiO $$_{3}$$ (STO) layers. Scanning transmission electron microscopy (STEM) showed that a high-quality interface is formed between YBCO and the top STO layers. An increase of $$T_c$$ up to $$\Delta$$ T $$\approx$$ 20 K was observed at these interfaces in case of underdoped YBCO films.- 10 June 2022
- Published by Springer Nature in Journal of Superconductivity and Novel Magnetism
- Vol. 35 (7) , 1801-1805
Open AccessCoulomb Interaction Engineering at YBa$_{2}$Cu$_3$O$_{7-\delta }$-SrTiO$_{3}$ InterfaceIt has been proposed by Müller and Shengelaya that underdoped ultrathin layers of copper-oxide high-temperature superconductors (HTSs) sandwiched between high-dielectric-constant insulator layers could manifest increased superconducting critical temperature $$T_c$$ . To check this hypothesis, we investigated structural and transport properties of YBa $$_{2}$$ Cu $$_{3}$$ O $$_{7-\delta }$$ (YBCO) thin films sandwiched between SrTiO $$_{3}$$ (STO) layers. Scanning transmission electron microscopy (STEM) showed that a high-quality interface is formed between YBCO and the top STO layers. An increase of $$T_c$$ up to $$\Delta$$ T $$\approx$$ 20 K was observed at these interfaces in case of underdoped YBCO films. - Open Access
- 12 January 2022
- Published by Wiley in Advanced Photonics Research
- Vol. 3 (4) , 2100179
Fundamental Loading‐Curve Characteristics of the Persistent Phosphor SrAl2O4:Eu2+,Dy3+,B3+: The Effect of Temperature and Excitation Density
The compound SrAl2O4:Eu2+,Dy3+ is currently one of the best‐performing persistent phosphors and numerous studies have been performed to understand the mechanisms involved in its afterglow process. One aspect which so far has received only limited attention is the dependence of loading curve characteristics on dopant concentrations. Herein, a detailed study of the loading curves of SrAl2O4:Eu2+,Dy3+ as a function of composition, sample temperature, and pump intensity is presented, completed by emission decay and quantum yield measurements. The observed emission decays can be described using the Inokuti−Hirayama equation for a Dexter energy transfer (ET) process. As the Dexter ET rate and the electron transfer rate have a similar radial dependence, the Inokuti−Hirayama equation can also describe the electron transfer process involved for the trapping process. These observations indicate that in this persistent phosphor, the trapping process is a local process; however, different types of traps appear to present different “Dexter” critical radii R0. This electron transfer is also temperature dependent, which requires further investigations.
- 12 January 2022
- Published by Wiley in Advanced Photonics Research
- Vol. 3 (4) , 2100179
Open AccessFundamental Loading‐Curve Characteristics of the Persistent Phosphor SrAl2O4:Eu2+,Dy3+,B3+: The Effect of Temperature and Excitation Density
The compound SrAl2O4:Eu2+,Dy3+ is currently one of the best‐performing persistent phosphors and numerous studies have been performed to understand the mechanisms involved in its afterglow process. One aspect which so far has received only limited attention is the dependence of loading curve characteristics on dopant concentrations. Herein, a detailed study of the loading curves of SrAl2O4:Eu2+,Dy3+ as a function of composition, sample temperature, and pump intensity is presented, completed by emission decay and quantum yield measurements. The observed emission decays can be described using the Inokuti−Hirayama equation for a Dexter energy transfer (ET) process. As the Dexter ET rate and the electron transfer rate have a similar radial dependence, the Inokuti−Hirayama equation can also describe the electron transfer process involved for the trapping process. These observations indicate that in this persistent phosphor, the trapping process is a local process; however, different types of traps appear to present different “Dexter” critical radii R0. This electron transfer is also temperature dependent, which requires further investigations.
- 19 November 2020
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 128 (19) , 195302
Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers
Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as thermal barriers and by changing their thickness, it is possible to manipulate interfacial effects on thermal transport. In this work, we report on the thermal conductivity of Cu/W, Cu/Ta, and Cu/TaN sputter deposited nanomultilayers with different thicknesses. The resistive interfacial effects are rationalized and discussed also in relation to the structural transformation into a nano-composite upon high-temperature annealing.
- 19 November 2020
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 128 (19) , 195302
Interface and layer periodicity effects on the thermal conductivity of copper-based nanomultilayers with tungsten, tantalum, and tantalum nitride diffusion barriers
Nanomultilayers are complex architectures of materials stacked in sequence with layer thicknesses in the nanometer range. Their application in microelectronics is challenged by their thermal stability, conductivity, and interface reactivity, which can compromise their performance and usability. By using different materials as thermal barriers and by changing their thickness, it is possible to manipulate interfacial effects on thermal transport. In this work, we report on the thermal conductivity of Cu/W, Cu/Ta, and Cu/TaN sputter deposited nanomultilayers with different thicknesses. The resistive interfacial effects are rationalized and discussed also in relation to the structural transformation into a nano-composite upon high-temperature annealing.
- Open Access
- 16 October 2020
- Published by MDPI AG in Condensed Matter
- Vol. 5 (4) , 63
Unconventional Transport Properties of Reduced Tungsten Oxide WO2.9
The temperature and magnetic field dependence of resistivity in WO2.9 was investigated. The variation of resistivity with temperature displayed unusual features, such as a broad maximum around 230 K and a logarithmic increase of resistivity below 16 K. In the temperature range 16–230 K, we observed metallic-like behavior with a positive temperature coefficient. The combined analysis of resistivity and magnetoresistance (MR) data shows that these unusual transport properties of WO2.9 can be understood by considering the (bi)polaronic nature of charge carriers. In contrast to magnetization data, superconducting transition below Tc = 80 K was not detected in resistivity measurements, indicating that the superconductivity is localized in small regions that do not percolate. We found a strong increase in positive MR below 80 K. This effect is similar to that observed in underdoped cuprates, where the substantial increase of MR is attributed to superconducting fluctuations in small clusters. Therefore, the temperature dependence of MR indicates the presence of non-percolating superconducting clusters in WO2.9 below 80 K in agreement with magnetization data.
- 16 October 2020
- Published by MDPI AG in Condensed Matter
- Vol. 5 (4) , 63
Open AccessUnconventional Transport Properties of Reduced Tungsten Oxide WO2.9
The temperature and magnetic field dependence of resistivity in WO2.9 was investigated. The variation of resistivity with temperature displayed unusual features, such as a broad maximum around 230 K and a logarithmic increase of resistivity below 16 K. In the temperature range 16–230 K, we observed metallic-like behavior with a positive temperature coefficient. The combined analysis of resistivity and magnetoresistance (MR) data shows that these unusual transport properties of WO2.9 can be understood by considering the (bi)polaronic nature of charge carriers. In contrast to magnetization data, superconducting transition below Tc = 80 K was not detected in resistivity measurements, indicating that the superconductivity is localized in small regions that do not percolate. We found a strong increase in positive MR below 80 K. This effect is similar to that observed in underdoped cuprates, where the substantial increase of MR is attributed to superconducting fluctuations in small clusters. Therefore, the temperature dependence of MR indicates the presence of non-percolating superconducting clusters in WO2.9 below 80 K in agreement with magnetization data.
- 1 October 2019
- Published by Elsevier in Applied Surface Science
- Vol. 491, 53-59
Direct-epitaxial growth of SrAl2O4:Eu,Dy thin films on Al2O3 substrate by pulsed laser deposition
- 1 October 2019
- Published by Elsevier in Applied Surface Science
- Vol. 491, 53-59
Direct-epitaxial growth of SrAl2O4:Eu,Dy thin films on Al2O3 substrate by pulsed laser deposition
- Open Access
- 20 May 2019
- Published by Taylor & Francis in Science and Technology of Advanced Materials
- Vol. 20 (1) , 456-463
Structural properties of ultrathin SrO film deposited on SrTiO3
The role of epitaxial strain and chemical termination in selected interfaces of perovskite oxide heterostructures is under intensive investigation because of emerging novel electronic properties. SrTiO (STO) is one of the most used substrates for these compounds, and along its direction allows for two nonpolar chemical terminations: TiO2 and SrO. In this paper, we investigate the surface morphology and crystal structure of SrO epitaxial ultrathin films: from 1 to about 25 layers grown onto TiO -terminated STO substrates. X-ray diffraction and transmission electron microscopy analysis reveal that SrO grows along its direction with a 4% out-of-plane elongation. This large strain may underlay the mechanism of the formation of self-organized pattern of stripes that we observed in the initial growth. We found that the distance between the TiO plane and the first deposited SrO layer is nm, a value which is about 40% bigger than in the STO bulk. We demonstrate that a single SrO-deposited layer has a different morphology compared to an ideal atomically flat chemical termination. GRAPHICAL ABSTRACT- 20 May 2019
- Published by Taylor & Francis in Science and Technology of Advanced Materials
- Vol. 20 (1) , 456-463
Open AccessStructural properties of ultrathin SrO film deposited on SrTiO3
The role of epitaxial strain and chemical termination in selected interfaces of perovskite oxide heterostructures is under intensive investigation because of emerging novel electronic properties. SrTiO (STO) is one of the most used substrates for these compounds, and along its direction allows for two nonpolar chemical terminations: TiO2 and SrO. In this paper, we investigate the surface morphology and crystal structure of SrO epitaxial ultrathin films: from 1 to about 25 layers grown onto TiO -terminated STO substrates. X-ray diffraction and transmission electron microscopy analysis reveal that SrO grows along its direction with a 4% out-of-plane elongation. This large strain may underlay the mechanism of the formation of self-organized pattern of stripes that we observed in the initial growth. We found that the distance between the TiO plane and the first deposited SrO layer is nm, a value which is about 40% bigger than in the STO bulk. We demonstrate that a single SrO-deposited layer has a different morphology compared to an ideal atomically flat chemical termination. GRAPHICAL ABSTRACT