Elmar Mitterreiter

For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab initio theory of chalcogen vacancies in monolayer MoS₂. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

For two-dimensional (2D) layered semiconductors, control over atomic defects and understanding of their electronic and optical functionality represent major challenges towards developing a mature semiconductor technology using such materials. Here, we correlate generation, optical spectroscopy, atomic resolution imaging, and ab-initio theory of chalcogen vacancies in monolayer MoS₂. Chalcogen vacancies are selectively generated by in-vacuo annealing, but also focused ion beam exposure. The defect generation rate, atomic imaging and the optical signatures support this claim. We discriminate the narrow linewidth photoluminescence signatures of vacancies, resulting predominantly from localized defect orbitals, from broad luminescence features in the same spectral range, resulting from adsorbates. Vacancies can be patterned with a precision below 10 nm by ion beams, show single photon emission, and open the possibility for advanced defect engineering of 2D semiconductors at the ultimate scale.

Nanostructured 2D transition metal dichalcogenides play an increasingly important role in heterogeneous catalysis. These materials are abundant (co-)catalysts with tunable properties to catalyze a number of key reactions related to energy provision, for instance the hydrogen evolution reaction (HER). It is vital to understand which surface sites are active in order to maximize their number and to improve the overall (photo-)catalytic behavior of those materials. Here, we visualize these active sites under HER conditions at the surface of molybdenum dichalcogenides (MoX₂, X = Se, S) with lateral resolution on the nanometer scale by means of electrochemical scanning tunneling microscopy. The edges of single MoX₂ flakes show high catalytic activity, whereas their terraces are inactive. We demonstrate how the inert basal planes of these materials can be activated towards the HER with the help of a focused beam of a He-ion microscope. Our findings demonstrate that the He-ion induced defects contribute at lower overpotentials to the HER, while the activity of the edges exceeds the activity of the basal defects for sufficiently high overpotentials. Given the lithographic resolution of the helium ion microscope, our results show the possibility to generate active sites in transition metal dichalcogenides with a spatial resolution below a few nanometers.

Quantum light sources in solid-state systems are of major interest as a basic ingredient for integrated quantum photonic technologies. The ability to tailor quantum emitters via site-selective defect engineering is essential for realizing scalable architectures. However, a major difficulty is that defects need to be controllably positioned within the material. Here, we overcome this challenge by controllably irradiating monolayer MoS₂ using a sub-nm focused helium ion beam to deterministically create defects. Subsequent encapsulation of the ion exposed MoS₂ flake with high-quality hBN reveals spectrally narrow emission lines that produce photons in the visible spectral range. Based on ab-initio calculations we interpret these emission lines as stemming from the recombination of highly localized electron–hole complexes at defect states generated by the local helium ion exposure. Our approach to deterministically write optically active defect states in a single transition metal dichalcogenide layer provides a platform for realizing exotic many-body systems, including coupled single-photon sources and interacting exciton lattices that may allow the exploration of Hubbard physics.