Fabian A. Cuellar
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Fabian A. Cuellar has a total of 150 co-authors. Here are the top co-authors by number of shared publications:
- Jacobo Santamaria
Complutense University of Madrid
16 shared publications - Carlos Leon
Universidad Complutense
12 shared publications - Gabriel Sánchez-Santolino
GFMC Departamento de Física de Materiales Facultad de Física Universidad Complutense Madrid Spain
8 shared publications - David Sanchez-Manzano
Laboratoire Albert Fert
7 shared publications - Zouhair Sefrioui
GFMC, Departamento Física Aplicada III, Universidad Complutense de Madrid, 28040 Madrid, Spain
7 shared publications - Alberto Rivera-Calzada
GFMC Universidad Complutense de Madrid Madrid Spain
6 shared publications
Latest Publications
- 13 January 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (1)
Bipolar spin-valve effect in complex-oxide superconductor/half-metallic ferromagnet junctions
- 13 January 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (1)
Bipolar spin-valve effect in complex-oxide superconductor/half-metallic ferromagnet junctions
- Open Access
- 15 July 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (3)
Publisher's Note: “Long-range superconducting proximity effect in YBa2Cu3O7/La0.7Ca0.3MnO3 weak-link arrays” [Appl. Phys. Lett. 124, 222603 (2024)]
This article was originally published online on 30 May 2024 with an error in affiliation 2 and the acknowledgments. Affiliation 2 is correct as it appears above This article was originally published online on 30 May 2024 with an error in affiliation 2 and the acknowledgments. Affiliation 2 is correct as it appears above
- 15 July 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (3)
Open AccessPublisher's Note: “Long-range superconducting proximity effect in YBa2Cu3O7/La0.7Ca0.3MnO3 weak-link arrays” [Appl. Phys. Lett. 124, 222603 (2024)]
This article was originally published online on 30 May 2024 with an error in affiliation 2 and the acknowledgments. Affiliation 2 is correct as it appears above This article was originally published online on 30 May 2024 with an error in affiliation 2 and the acknowledgments. Affiliation 2 is correct as it appears above
- Open Access
- 27 May 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (22)
Long-range superconducting proximity effect in YBa2Cu3O7/La0.7Ca0.3MnO3 weak-link arrays
The interplay between ferromagnetism and superconductivity has attracted substantial interest due to its potential for exotic quantum phenomena and advanced electronic devices. Although ferromagnetism and superconductivity are antagonistic phenomena, ferromagnets (F) can host spin-triplet superconductivity induced via proximity with superconductors (S). To date, most of the experimental effort has been focused on single S/F/S junctions. Here, we have found the fingerprints of long-range superconducting proximity effect in micrometric weak-link arrays, formed by embedding YBa2Cu3O7 superconducting islands in a half-metallic ferromagnet La0.7Ca0.3MnO3 film. These arrays show magnetoresistance oscillations that appear at temperatures below the critical temperature of YBa2Cu3O7 for currents below a threshold, indicating their superconducting origin. This realization paves the way for device architectures displaying macroscopic quantum interference effects, which are of interest for field sensing applications, among others.
- 27 May 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 124 (22)
Open AccessLong-range superconducting proximity effect in YBa2Cu3O7/La0.7Ca0.3MnO3 weak-link arrays
The interplay between ferromagnetism and superconductivity has attracted substantial interest due to its potential for exotic quantum phenomena and advanced electronic devices. Although ferromagnetism and superconductivity are antagonistic phenomena, ferromagnets (F) can host spin-triplet superconductivity induced via proximity with superconductors (S). To date, most of the experimental effort has been focused on single S/F/S junctions. Here, we have found the fingerprints of long-range superconducting proximity effect in micrometric weak-link arrays, formed by embedding YBa2Cu3O7 superconducting islands in a half-metallic ferromagnet La0.7Ca0.3MnO3 film. These arrays show magnetoresistance oscillations that appear at temperatures below the critical temperature of YBa2Cu3O7 for currents below a threshold, indicating their superconducting origin. This realization paves the way for device architectures displaying macroscopic quantum interference effects, which are of interest for field sensing applications, among others.
- Top Cited PapersOpen Access
- 14 February 2024
- Published by Springer Nature in Nature
- Vol. 626 (7999) , 529-534
A 2D ferroelectric vortex pattern in twisted BaTiO3 freestanding layers
The wealth of complex polar topologies1–10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric–dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11–14 domains that evolve into vortex-like structures at the nanoscale15–17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
- 14 February 2024
- Published by Springer Nature in Nature
- Vol. 626 (7999) , 529-534
Top Cited PapersOpen AccessA 2D ferroelectric vortex pattern in twisted BaTiO3 freestanding layers
The wealth of complex polar topologies1–10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric–dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11–14 domains that evolve into vortex-like structures at the nanoscale15–17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
- 5 February 2024
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 132 (6) , 066001
Disentangling Photodoping, Photoconductivity, and Photosuperconductivity in the Cuprates
The normal-state conductivity and superconducting critical temperature of oxygen-deficient can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects—termed persistent photoconductivity and photosuperconductivity (PPS)—has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here, we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms, since they present different wavelength and oxygen-content dependences as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, persistent photoconductivity, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.- 5 February 2024
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 132 (6) , 066001
Disentangling Photodoping, Photoconductivity, and Photosuperconductivity in the Cuprates
The normal-state conductivity and superconducting critical temperature of oxygen-deficient can be persistently enhanced by illumination. Strongly debated for years, the origin of those effects—termed persistent photoconductivity and photosuperconductivity (PPS)—has remained an unsolved critical problem, whose comprehension may provide key insights to harness the origin of high-temperature superconductivity itself. Here, we make essential steps toward understanding PPS. While the models proposed so far assume that it is caused by a carrier-density increase (photodoping) observed concomitantly, our experiments contradict such conventional belief: we demonstrate that it is instead linked to a photo-induced decrease of the electronic scattering rate. Furthermore, we find that the latter effect and photodoping are completely disconnected and originate from different microscopic mechanisms, since they present different wavelength and oxygen-content dependences as well as strikingly different relaxation dynamics. Besides helping disentangle photodoping, persistent photoconductivity, and PPS, our results provide new evidence for the intimate relation between critical temperature and scattering rate, a key ingredient in modern theories on high-temperature superconductivity.- Open Access
- 24 May 2023
- Published by Springer Nature in Communications Materials
- Vol. 4 (1) , 1-10
Reversible metal-insulator transition in SrIrO3 ultrathin layers by field effect control of inversion symmetry breaking
SrIrO3 is a correlated semimetal with narrow t2g d-bands of strong mixed orbital character resulting from the interplay of the spin-orbit interaction due to heavy iridium atoms and the band folding induced by the lattice structure. In ultrathin layers, inversion symmetry breaking, occurring naturally due to the presence of the substrate, opens new orbital hopping channels, which in presence of spin-orbit interaction causes deep modifications in the electronic structure. Here, we show that in SrIrO3 ultrathin films the effect of inversion symmetry breaking on the band structure can be externally manipulated in a field effect experiment. We further prove that the electric field toggles the system reversibly between a metallic and an insulating state with canted antiferromagnetism and an emergent anomalous Hall effect. This is achieved through the spin-orbit driven coupling of the electric field generated in an ionic liquid gate to the electronic structure, where the electric field controls the band structure rather than the usual band filling, thereby enabling electrical control of the effective role of electron correlations. The externally tunable antiferromagnetic insulator, rooted in the strong spin-orbit interaction of iridium, may inspire interesting applications in spintronics.
- 24 May 2023
- Published by Springer Nature in Communications Materials
- Vol. 4 (1) , 1-10
Open AccessReversible metal-insulator transition in SrIrO3 ultrathin layers by field effect control of inversion symmetry breaking
SrIrO3 is a correlated semimetal with narrow t2g d-bands of strong mixed orbital character resulting from the interplay of the spin-orbit interaction due to heavy iridium atoms and the band folding induced by the lattice structure. In ultrathin layers, inversion symmetry breaking, occurring naturally due to the presence of the substrate, opens new orbital hopping channels, which in presence of spin-orbit interaction causes deep modifications in the electronic structure. Here, we show that in SrIrO3 ultrathin films the effect of inversion symmetry breaking on the band structure can be externally manipulated in a field effect experiment. We further prove that the electric field toggles the system reversibly between a metallic and an insulating state with canted antiferromagnetism and an emergent anomalous Hall effect. This is achieved through the spin-orbit driven coupling of the electric field generated in an ionic liquid gate to the electronic structure, where the electric field controls the band structure rather than the usual band filling, thereby enabling electrical control of the effective role of electron correlations. The externally tunable antiferromagnetic insulator, rooted in the strong spin-orbit interaction of iridium, may inspire interesting applications in spintronics.
- Open Access
- 6 January 2023
- Published by Springer Nature in Research Square
A 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers
The wealth of complex polar topologies [1- 6] recently found in nanoscale ferroelectrics result from a delicate balance between the materials’ intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary conditions imposed upon them. Ferroelectric–dielectric interfaces are model systems where polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure [7-11] domains that evolve into vortex-like structures at the nanoscale [12-14]. Interestingly, while ferroelectricity is known to couple strongly to strain (both homogeneous [15] and inhomogeneous [16, 17]), the effect of mechanical constraints [18] on thin film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles opens an unprecedented opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated to the twisting. Interestingly, we find that a peculiar pattern of polarization vortices emerges from a so far unreported reciprocal converse flexoelectric coupling of polarization gradients to strain, with an estimated magnitude that is typical of ferroelectric perovskites. This finding opens exciting opportunities to create two-dimensional high density vortex crystals that would allow us to explore novel physical effects and functionalities.
- 6 January 2023
- Published by Springer Nature in Research Square
Open AccessA 2D ferroelectric vortex lattice in twisted BaTiO3 freestanding layers
The wealth of complex polar topologies [1- 6] recently found in nanoscale ferroelectrics result from a delicate balance between the materials’ intrinsic tendency to develop a homogeneous polarization and the electric and mechanic boundary conditions imposed upon them. Ferroelectric–dielectric interfaces are model systems where polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure [7-11] domains that evolve into vortex-like structures at the nanoscale [12-14]. Interestingly, while ferroelectricity is known to couple strongly to strain (both homogeneous [15] and inhomogeneous [16, 17]), the effect of mechanical constraints [18] on thin film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles opens an unprecedented opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated to the twisting. Interestingly, we find that a peculiar pattern of polarization vortices emerges from a so far unreported reciprocal converse flexoelectric coupling of polarization gradients to strain, with an estimated magnitude that is typical of ferroelectric perovskites. This finding opens exciting opportunities to create two-dimensional high density vortex crystals that would allow us to explore novel physical effects and functionalities.
- 2 December 2021
- Published by Springer Nature in Nature Materials
- Vol. 21 (2) , 188-194
Extremely long-range, high-temperature Josephson coupling across a half-metallic ferromagnet
The Josephson effect results from the coupling of two superconductors across a spacer such as an insulator, a normal metal or a ferromagnet to yield a phase coherent quantum state. However, in junctions with ferromagnetic spacers, very long-range Josephson effects have remained elusive. Here we demonstrate extremely long-range (micrometric) high-temperature (tens of kelvins) Josephson coupling across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7. These planar junctions, in addition to large critical currents, display the hallmarks of Josephson physics, such as critical current oscillations driven by magnetic flux quantization and quantum phase locking effects under microwave excitation (Shapiro steps). The latter display an anomalous doubling of the Josephson frequency predicted by several theories. In addition to its fundamental interest, the marriage between high-temperature, dissipationless quantum coherent transport and full spin polarization brings opportunities for the practical realization of superconducting spintronics, and opens new perspectives for quantum computing.
- 2 December 2021
- Published by Springer Nature in Nature Materials
- Vol. 21 (2) , 188-194
Extremely long-range, high-temperature Josephson coupling across a half-metallic ferromagnet
The Josephson effect results from the coupling of two superconductors across a spacer such as an insulator, a normal metal or a ferromagnet to yield a phase coherent quantum state. However, in junctions with ferromagnetic spacers, very long-range Josephson effects have remained elusive. Here we demonstrate extremely long-range (micrometric) high-temperature (tens of kelvins) Josephson coupling across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7. These planar junctions, in addition to large critical currents, display the hallmarks of Josephson physics, such as critical current oscillations driven by magnetic flux quantization and quantum phase locking effects under microwave excitation (Shapiro steps). The latter display an anomalous doubling of the Josephson frequency predicted by several theories. In addition to its fundamental interest, the marriage between high-temperature, dissipationless quantum coherent transport and full spin polarization brings opportunities for the practical realization of superconducting spintronics, and opens new perspectives for quantum computing.
- Open Access
- 1 March 2021
- Published by AIP Publishing in APL Materials
- Vol. 9 (3) , 031110
Ferroionic inversion of spin polarization in a spin-memristor
Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La0.7Sr0.3MnO3 bottom electrode, a BaTiO3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.
- 1 March 2021
- Published by AIP Publishing in APL Materials
- Vol. 9 (3) , 031110
Open AccessFerroionic inversion of spin polarization in a spin-memristor
Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling both effects is of major importance toward exploiting these effects in practical spintronic or spinorbitronic devices. We report on the independent control of ferroelectric and oxygen vacancy switching in multiferroic tunnel junctions with a La0.7Sr0.3MnO3 bottom electrode, a BaTiO3 ferroelectric barrier, and a Ni top electrode. We show that the concurrence of interface oxidation and ferroelectric switching allows for the controlled inversion of the interface spin polarization. Moreover, we show the possibility of a spin-memristor where the controlled oxidation of the interface allows for a continuum of memresistance states in the tunneling magnetoresistance. These results signal interesting new avenues toward neuromorphic devices where, as in practical neurons, the electronic response is controlled by electrochemical degrees of freedom.
- 30 December 2020
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 125 (26) , 266802
Controlled Sign Reversal of Electroresistance in Oxide Tunnel Junctions by Electrochemical-Ferroelectric Coupling
The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometer-thick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a bottom electrode and ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphic computing.- 30 December 2020
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 125 (26) , 266802
Controlled Sign Reversal of Electroresistance in Oxide Tunnel Junctions by Electrochemical-Ferroelectric Coupling
The persistence of ferroelectricity in ultrathin layers relies critically on screening or compensation of polarization charges which otherwise destabilize the ferroelectric state. At surfaces, charged defects play a crucial role in the screening mechanism triggering novel mixed electrochemical-ferroelectric states. At interfaces, however, the coupling between ferroelectric and electrochemical states has remained unexplored. Here, we make use of the dynamic formation of the oxygen vacancy profile in the nanometer-thick barrier of a ferroelectric tunnel junction to demonstrate the interplay between electrochemical and ferroelectric degrees of freedom at an oxide interface. We fabricate ferroelectric tunnel junctions with a bottom electrode and ferroelectric barrier. We use poling strategies to promote the generation and transport of oxygen vacancies at the metallic top electrode. Generated oxygen vacancies control the stability of the ferroelectric polarization and modify its coercive fields. The ferroelectric polarization, in turn, controls the ionization of oxygen vacancies well above the limits of thermodynamic equilibrium, triggering the build up of a Schottky barrier at the interface which can be turned on and off with ferroelectric switching. This interplay between electronic and electrochemical degrees of freedom yields very large values of the electroresistance (more than at low temperatures) and enables a controlled switching between clockwise and counterclockwise switching modes in the same junction (and consequently, a change of the sign of the electroresistance). The strong coupling found between electrochemical and electronic degrees of freedom sheds light on the growing debate between resistive and ferroelectric switching in ferroelectric tunnel junctions, and moreover, can be the source of novel concepts in memory devices and neuromorphic computing.