Tian Yu

Conventional von Neumann architectures face fundamental energy-efficiency bottlenecks, while current optoelectronic neuromorphic devices remain confined to simple optoelectronic responses, unable to leverage continuous physical degrees of freedom such as light polarization for continuous, analog synaptic modulation. We report a continuously polarization-tunable photonic memristor based on chiral 2D (R/S-MBA)2PbI4 perovskites, which integrates polarimetric sensing with neuromorphic computing. By incorporating molecular chirality into the inorganic framework, we leverage the chirality-induced spin selectivity effect to regulate synaptic relaxation dynamics via spin-dependent carrier transport. This mechanism enables continuous, polarization-tunable synaptic weight updates, significantly extending the functional dimensionality of neuromorphic hardware. We validate this architecture through noise-resilient modified national institute of standards and technology (MNIST) database classification—where chiroptical filtering improves accuracy from 76% to 88%—and high-precision semantic segmentation, achieving a polarization phase resolution of 5° and a Sørensen–Dice coefficient exceeding 0.9. These results establish a physical foundation for integrating spin-dependent degrees of freedom into optoelectronic neuromorphic systems, offering a robust pathway for next-generation intelligent processing.

The fast development of portable electronics demands electrodes for supercapacitors that are compatible with miniaturized device applications. In this study, an orderly aligned coaxial bilayer nanotube array made of transition metal/transition metal oxides was adopted as a nanostructure-integrated electrode for applications as miniaturized micro-supercapacitors. Using Ni and NiO as our model materials, the corresponding Ni/NiO-CBNTA electrodes were fabricated using templated growth and post-thermal oxidation. The Ni shells served as parts of the 3D nano-architectured collector, providing a large specific surface area, and the pseudocapacitive NiO layers were directly attached and electrically connected to the collector without any additives. The vertical growth of orderly aligned Ni/NiO-CBNTAs successfully avoided the underutilization of capacitive nanomaterials and allowed the electrolyte to be fully accessed, which manifested full charge storage capabilities under the miniaturizing. It was demonstrated that Ni/NiO-CBNTAs can serve as miniaturized electrodes with an improved specific capacitance of 1125 F/g ≅ 3 A/g, which is comparable to that obtained in a massive load electrode prepared by the conventional slurry-coating technique.

The phase-selective controlled synthesis of Cs₄PbBr₆ and CsPbBr₃ nanocrystals was realized by adjusting the dosage of oleic acid.

Extra-factors-controlled ReRAM devices are expected to be used in the manufacture of multistate memory and artificial intelligent sensors.

Diamond based quantum sensing is a fast-emerging field with both scientific and technological importance. The nitrogen-vacancy (NV) center, a crystal defect in diamond, is a unique model system for microwave sensing application due to its excellent photo-stability, long spin coherence time in ambient conditions. In this work, we systematically optimized the measurement parameters for microwave sensing. The system noise is analyzed, and 1/f noise is suppressed by introducing a differential algorithm. The gain of avalanche photodiode and the gating window of the pulsed fluorescence is optimized to further suppress the noise floor. The decoherence of spin is characterized by varying the duration of the laser and microwave. The minimal detectable power on a standard microstrip is characterized with sampling time down to 1 ms, showing flat frequency dependence. The results have important implications toward fast measurement of broadband microwave power, especially in the field of IC testing and radar signal processing under intense electromagnetic interference.

The Weyl antiferromagnet Mn₃Sn has recently attracted significant attention as it is not only a novel magnetic quantum material of fundamental interest, but it also opens opportunities to investigate a number of exotic spin-dependent transports for practical antiferromagnetic devices. Here, we report the large spin to charge conversion observed in YIG/Mn₃Sn. Evidenced by both spin Seebeck and spin pumping measurements, the spin to charge conversion efficiency of Mn₃Sn is found ∼2.5 times of that for the conventional heavy metal Ta. Our results suggest a promising potential for employing a topological non-trivial antiferromagnet to achieve more efficient spin to charge conversion than conventional metallic materials.