Petr Praus

Interfaces and contacts critically influence the performance and stability of semiconductor devices, yet direct experimental access to charge accumulation and release processes near biased interfaces remains limited. Here, we introduce the Bias Polarity Switching (BiPS) technique as a transient method for probing carrier dynamics in the sub‐/micrometer‐scale near‐interface region under realistic operating conditions. We show that BiPS enables distinction between free‐ and trapped‐carrier contributions to the transient response, allowing extraction of carrier mobility, characteristic trapping and detrapping times, and an effective interfacial extraction rate. Applied to representative single‐crystal semiconductor systems with different contact configurations, including melt‐grown CsPbBr ₃ (Cr/Cr) and solution‐grown MAPbBr ₃ (Cr, SnO ₂ /Cr), BiPS reveals interfacial barriers that drive carrier accumulation and defect filling. CsPbBr ₃ exhibits long‐lived space charge densities in the order of ∼3 × 10 ¹¹ cm ⁻³ . Analysis of the BiPS transients yields trapping times of 1–100 µs, detrapping times of 20 µs–3 ms, and activation energies of 280–450 meV for interfacial defect states. Finally, a proof‐of‐feasibility experiment on CdZnTe demonstrates the feasibility of extending BiPS beyond perovskite materials.

In this work, we studied the free-carrier transport properties and space-charge formation/polarization in a CdZnTe bar-shaped radiation detector using the Laser-Induced Transient Current technique. We found out that a steady-state space charge ranging from 8 × 108 to 2.1 × 109 cm−3 is formed throughout the detector at about 0.5 s following biasing. The measured current waveforms were modeled by Monte Carlo simulations after taking into account the electric and weighting fields inside the detector and shielding box. Modeling of the unpolarized waveforms revealed an exceptionally high electron mobility-lifetime product μeτe≥0.095cm2V−1. The observed formation of positive space charge in the biased detector and linear scaling of the current waveform shapes on applied bias revealed that the detector polarization is attributed to carrier injection at the anode. Measurements in pulsed and DC bias in modified electrode geometry proved the surface-charge formation.

Laser-induced transient currents were measured after applying pulsed or direct-current bias to a CdZnTe quasi-hemispherical radiation detector with gold contacts. The temporal evolution of current transients was analyzed to evaluate the dynamics of the space charge formation and its spatial distribution. The observed effects were explained by a model involving hole injection from positively biased contacts. Experimental results were complemented by numerical simulations, which supported the model. This paper discusses how the detected phenomena affect the detector performance and proposes an improved detector design.

The performance of the CdTe radiation detectors heavily relies on the method of contact preparation. A convenient research method addressing this problem is the laser-induced transient current technique. In this paper, we compare the performance of two CdTe crystals which underwent different metallization processes. We showed that appropriately designed Au/Al contacts induce much less bulk polarization than commercial Pt/In electrodes under the same working conditions and can thus provide a convenient alternative to the industry standard. The comparison was based on the monitoring of the time-dependent sensor polarization measuring transient currents excited by above-bandgap laser illumination complemented by the Am 241 gamma spectroscopy. The theoretical analysis of current waveforms and radiation spectra enabled us to determine the charge carrier mobility, mobility-lifetime products of electrons and holes, and temporal and bias dependence of the space charge formation.

Halide perovskites have undergone remarkable developments as highly efficient optoelectronic materials for a variety of applications. Several studies indicated the critical role of defects on the performance of perovskite devices. However, the parameters of defects and their interplay with free charge carriers remain unclear. In this study, we explored the dynamics of free holes in methylammonium lead tribromide (MAPbBr₃) single crystals using the time-of-flight (ToF) current spectroscopy. By combining ToF spectroscopy and Monte Carlo simulation, three energy states were detected in the bandgap of MAPbBr₃. In addition, we found the trapping and detrapping rates of free holes ranging from a few microseconds to hundreds of microseconds. Contrary to previous studies, we revealed a strong detrapping activity of traps. We showed that these traps substantially affect the transport properties of MAPbBr₃, including mobility and mobility-lifetime product. Our results provide an insight on charge transport properties of perovskite semiconductors.

Surface-enhanced fluorescence (SEF) requires the absorption/emission band of the fluorophore, the localized surface plasmon resonance (LSPR) of the nanostructure and the excitation wavelength to fall in the same (or very close) spectral range. In this paper, we monitor the SEF intensity and lifetime dependence of riboflavin (vitamin B2) adsorbed on a spacer-modified Ag substrate with respect to the thickness of the spacer. The substrates were formed by silver nanoislands deposited onto magnetron-sputtered polytetrafluoroethylene (ms-PTFE). The spacer was formed by the ms-PTFE layer with the thickness ranging from ~5 to 25 nm. The riboflavin dissolved in dimethylsulfoxide (DMSO) at a 10 µM concentration forms, at the ms-PTFE surface, a homogeneous layer of adsorbed molecules corresponding to a monomolecular layer. The microspectroscopic measurements of the adsorbed layer were performed through a sessile droplet; our study has shown the advantages and limitations of this approach. Time-resolved fluorescence enabled us to determine the enhanced fluorescence quantum yield due to the shortening of the radiative decay in the vicinity of the plasmonic surface. For the 5 nm ms-PTFE layer possessing the largest (estimated 4×) fluorescence enhancement, the quantum yield was increased 2.3×.

In this paper we compare suitability of three different semi-insulating bulk silicon carbide (SiC) materials for fabrication of radiation detectors. We prepared planar sensors with various metal contact combination and characterized detector quality by the alpha spectroscopy and I-V characteristic measurements. We observed that 4H-SiC material from the II-VI company is not suitable for radiation detector fabrication due to high concentration of vanadium doping. We also present a poor charge collection efficiency of the 4H-SiC Norstel material due to high concentration of residual impurities and we evaluated low mobility-lifetime product (alpha)= 3.5E-7 cm2/V from the alpha spectroscopy. We demonstrate that the 4H-SiC material from the Cree company is the best candidate for the production of radiation detectors. We evaluated mobility-lifetime product (alpha)= 5.4E-6 cm2/V using AuTi/SiC/TiAu contact structure.

Performance of the (CdZn)Te pixelated detectors heavily relies on the quality of the underlying material. Modern laser-induced transient current technique addresses this problem as a convenient tool for characterizing the associated charge distribution. In this paper, we investigated the charge sharing phenomenon in (CdZn)Te pixel detector as a function of the charge collected on adjacent pixels. The current transients were generated in the defined 4 mm² spots using 660 nm laser illumination. Waveforms measured on the pixel of interest and its surroundings were used to build the maps of the collected charge at different biases. The detailed study of the maps allowed us to distinguish the charge sharing region, the region with a defect, and the finest part in terms of the performance part of the pixelated anode. We observed the principal inhomogeneity complicating the assignment of the illuminated spot to the nearest pixel.