Cher Ming Tan

Early identification of internal short circuits (ISCs) in lithium-ion batteries is essential to prevent catastrophic thermal runaway. However, conventional diagnostic workflows typically require prolonged manufacturing aging or extensive cycle testing. This paper presents a novel, non-destructive safety application of the electrode polarization coefficient (α), a classical mathematical feature originally introduced in the seminal Shepherd battery model. While traditionally used for electrochemical voltage-capacity modeling, we repurpose α as a highly sensitive indicator extracted directly from standard constant-current discharge curves to isolate early-stage ISC signatures.,To validate this diagnostic framework, a targeted proof-of-concept case study was conducted on a batch of commercial lithium-ion cells, one of which exhibited early-stage polarization anomalies. The proposed framework successfully captures the subtle onset of internal shorting within the first one to three aging cycles without requiring extensive historical baseline datasets. While large-scale statistical validation across massive cell populations remains the logical next step for field deployment, this initial methodology disclosure demonstrates how historical electrochemical modeling parameters can bypass time-consuming lifecycle tests. We present this mathematical tracking framework as an open architecture to accelerate early-factory safety screening and integration into next-generation smart Battery Management Systems (BMS).

This article reveals the dynamic characteristics of the 1200 V p-GaN high electron mobility transistor (HEMT) with Schottky-type gate contact. While 650 V GaN HEMTs have been widely adopted in practical applications, 1200 V GaN devices are still in the development stage. Although the static characteristics of 1200 V devices meet the required specifications, new challenges arise in their dynamic behavior. Specifically, when the drain voltage exceeds 600 V, a voltage tail phenomenon occurs when the drain voltage drops to around 200 V, which delays the device turn-off process. Concurrently, the dynamic on-resistance ( R _ON ) of the device exhibits a resistance surge effect, increasing from 204 mΩ at 500 V to 1507 mΩ at 800 V. This degradation in dynamic resistance is primarily attributed to deep-level traps located at the Si ₃ N ₄ /AlGaN interface between the gate and drain region. Furthermore, the dynamic characteristics remain relatively stable with increasing temperature. According to the reverse transfer capacitance ( C _rss ) results at different frequencies, the traps between the gate and drain of the device are activated, resulting in a significant increase in the switching time and dynamic R _ON .

The development of adaptive material platforms that integrate proton radiation shielding with energy storage capabilities is critical for achieving both miniaturization and cost‐effective reliability in space electronics. Here, we present an industrially viable technology for fabricating covalent amorphous alumina‐hydrogenated graphene (AHG) films that can attenuate energetic protons, store electrical energy, and adapt to downsizing. Specifically, the fabrication involves thermal‐driven precipitation and crystallization of carbon species into hydrogenated graphene layers, along with oxidation of aluminum into amorphous alumina, on a nickel‐copper alloy surface. AHG films exhibit effective attenuation of energetic protons (15.2 MeV, 4.3 × 10 ¹² p/cm ² ), primarily attributed to proton trapping via C─H bond formation within the film matrix. Moreover, AHG films are laser‐scribed into interdigitated electrodes for constructing micro‐supercapacitors (µ‐SCs) with impressive energy (8.33 mWh/cm ³ ) and power (130 mW/cm ³ ) densities. Operando measurements of the AHG µ‐SCs demonstrate their dual functions in reducing the incident protons by ∼1.9 MeV in energy and ∼5.8 × 10 ¹¹ protons/cm ² in fluence, while maintaining stable capacitive behavior with ∼93% capacitance retained after the severe irradiation. These findings suggest significant potential for developing single multifunctional products as a replacement for both traditional radiation shields and energy storage devices in next‐generation space electronics.