Juha T. Muhonen

Large power consumption of silicon CMOS electronics is a challenge in very large-scale integrated circuits and a major roadblock to fault-tolerant quantum computation. Matching the power dissipation of Si-MOSFETs to the thermal budget at deep cryogenic temperatures, below 1 K, requires switching performance beyond the levels facilitated by currently available CMOS technologies. We have manufactured fully depleted silicon-on-insulator MOSFETs tailored to overcome the power dissipation barrier toward sub-1 K applications. With these cryo-optimized transistors we achieve a major milestone of reaching subthreshold swing of 0.3 mV/dec at 420 mK. This is a significant step toward realizing the very large-scale integration of cryo-CMOS electronics for ultra-low temperature applications.

We investigate the use of driven qubits coupled to a harmonic oscillator to implement a i SWAP gate. By dressing the qubits through an external driving field, the qubits and the harmonic oscillator can be selectively coupled, allowing for the measurement of individual qubit states, as well as leading to effective qubit-qubit interactions. We compare the qubit readout on bare and dressed qubits, and demonstrate that when coupled to low-frequency resonators, dressed qubits provide a more robust readout than bare qubits in the presence of damping and thermal effects. Furthermore, we study the impact of various system parameters on the fidelity of the two-qubit gate, identifying an optimal range for quantum computation. Our findings guide the implementation of high-fidelity quantum gates in experimental setups, for example, those employing nanoscale mechanical resonators.

Optomechanical devices based on sliced silicon photonic crystal nanobeams could have several use cases in future quantum technologies, especially as quantum transducers between different quantum systems. To create the required pure mechanical states at low temperatures, an understanding of photon absorption, thermal relaxation, and the associated photothermal force is crucial. Here, we characterize the strength of the photothermal force in sliced silicon nanobeam resonators. We extract the thermal relaxation time separately from phonon ray tracing simulations, allowing us to study the strength of the photothermal optomechanical effect without the uncertainty from the thermal relaxation time. With this information, we can put strict upper bounds to the photothermal force and photon absorption (β parameter) in the devices without knowledge of the cavity photon population. The methods we employ can easily be adapted to other geometries and devices for the study of the photothermal effects.

Balanced homodyne interferometry is a well-known detection technique that allows for sensitive characterization of light fields. Conventionally a homodyne interferometer is operated by locking the relative phase of a reference beam to the signal beam by means of an active feedback loop. A less often used method is to perform a slow continuous modulation of the reference beam arm length that corresponds to averaging all relative phases during the measurement. Here we show theoretically and experimentally that this quadrature averaging can be advantageous in estimating the parameters of a resonant optical cavity. We demonstrate that the averaging turns the transduction function, from cavity frequency fluctuations into the interferometer signal, into a simple function of the laser detuning that, notably, does not depend on the parameters of possible nonresonant channels present in the system. The method needs no active feedback and gives results that are easy to interpret. Moreover, the phase-averaged measurement allows characterization of the absolute magnitude of a cavity frequency modulation.

Donor spin states in silicon are a promising candidate for quantum information processing. One possible donor spin readout mechanism is the bound exciton transition that can be excited optically and creates an electrical signal when it decays. This transition has been extensively studied in bulk, but in order to scale towards localized spin readout, microfabricated structures are needed for detection. As these electrodes will inevitably cause strain in the silicon lattice, it will be crucial to understand how strain affects the exciton transitions. Here we study the phosphorous donor bound exciton transitions in silicon using hybrid electro-optical readout with microfabricated electrodes. We observe a significant zero-field splitting as well mixing of the hole states due to strain. We can model these effects assuming the known asymmetry of the hole g-factors and the Pikus-Bir Hamiltonian describing the strain. In addition, we describe the temperature, laser power and light polarization dependence of the transitions. Importantly, the hole-mixing should not prevent donor electron spin readout and using our measured parameters and numerical simulations we anticipate that hybrid spin readout in a silicon-on-insulator platform should be possible, allowing integration to silicon photonics platforms.

Optomechanical resonators were fabricated on a silicon-on-insulator substrate that had been implanted with phosphorus donors. The resonators’ mechanical and optical properties were then measured (at 6 K and room temperature) before and after the substrate was annealed. All measured resonators survived the annealing and their mechanical linewidths decreased while their optical and mechanical frequencies increased. This is consistent with crystal lattice damage from the ion implantation causing the optical and mechanical properties to degrade and then subsequently being repaired by the annealing. We explain these effects qualitatively with changes in the silicon crystal lattice structure. We also report on some unexplained features in the pre-anneal samples. In addition, we report partial fabrication of optomechanical resonators with neon ion milling.

Quantum phenomena are typically observable at length and time scales smaller than those of our everyday experience, often involving individual particles or excitations. The past few decades have seen a revolution in the ability to structure matter at the nanoscale, and experiments at the single particle level have become commonplace. This has opened wide new avenues for exploring and harnessing quantum mechanical effects in condensed matter. These quantum phenomena, in turn, have the potential to revolutionize the way we communicate, compute and probe the nanoscale world. Here, we review developments in key areas of quantum research in light of the nanotechnologies that enable them, with a view to what the future holds. Materials and devices with nanoscale features are used for quantum metrology and sensing, as building blocks for quantum computing, and as sources and detectors for quantum communication. They enable explorations of quantum behaviour and unconventional states in nano- and opto-mechanical systems, low-dimensional systems, molecular devices, nano-plasmonics, quantum electrodynamics, scanning tunnelling microscopy, and more. This rapidly expanding intersection of nanotechnology and quantum science/technology is mutually beneficial to both fields, laying claim to some of the most exciting scientific leaps of the last decade, with more on the horizon.