Martin Oehzelt
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Martin Oehzelt has a total of 221 co-authors. Here are the top co-authors by number of shared publications:
- Roland Resel
Institute of Solid State Physics, Graz University of Technology, 8010 Graz, Austria
35 shared publications - Ingo Salzmann
Concordia University
21 shared publications - Norbert Koch
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
19 shared publications - Claudia Draxl
Humboldt-Universität zu Berlin
12 shared publications - Peter Puschnig
University of Graz
12 shared publications - Steffen Duhm
Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, People’s Republic of China
10 shared publications
Latest Publications
- Open Access
- 1 September 2021
- Published by IOP Publishing in Electronic Structure
- Vol. 3 (3) , 034008
Electronic properties and degradation upon VUV irradiation of sodium chloride on Ag(111) studied by photoelectron spectroscopy
The growth as well as vacuum ultraviolet (VUV) radiation-induced degradation of sodium chloride (NaCl) on Ag(111) is investigated by ultraviolet and x-ray photoelectron spectroscopy. In line with previous scanning tunneling microscopy studies, our results confirm that NaCl grows initially as a bilayer before island growth starts. Simple spectroscopic methods for calibrating the closure of the NaCl bilayer are further presented. In addition, the energy level alignment is studied as a function of NaCl film thickness and VUV-light intensity. When measuring with ultra-low photon flux, a sharp interface dipole lowers the sample work function by 0.65 eV upon adsorption of the first bilayer, which is followed by vacuum level alignment for subsequently deposited layers. In contrast, measurements performed with standard photon fluxes, such as those provided by commercial He discharge lamps, shows ‘downward band-bending’-like characteristics in the NaCl films. Upon extended exposure time to the standard VUV intensity, photoemission measurements further reveal that strong modifications of the electronic properties of the NaCl surface occur. These are likely correlated with halogen emission, eventually resulting in the formation of Na clusters promoting low work function of parts of the sample surface. This study provides general guidelines for obtaining reliable spectroscopic measurements on alkali halide thin films on metals.
- 1 September 2021
- Published by IOP Publishing in Electronic Structure
- Vol. 3 (3) , 034008
Open AccessElectronic properties and degradation upon VUV irradiation of sodium chloride on Ag(111) studied by photoelectron spectroscopy
The growth as well as vacuum ultraviolet (VUV) radiation-induced degradation of sodium chloride (NaCl) on Ag(111) is investigated by ultraviolet and x-ray photoelectron spectroscopy. In line with previous scanning tunneling microscopy studies, our results confirm that NaCl grows initially as a bilayer before island growth starts. Simple spectroscopic methods for calibrating the closure of the NaCl bilayer are further presented. In addition, the energy level alignment is studied as a function of NaCl film thickness and VUV-light intensity. When measuring with ultra-low photon flux, a sharp interface dipole lowers the sample work function by 0.65 eV upon adsorption of the first bilayer, which is followed by vacuum level alignment for subsequently deposited layers. In contrast, measurements performed with standard photon fluxes, such as those provided by commercial He discharge lamps, shows ‘downward band-bending’-like characteristics in the NaCl films. Upon extended exposure time to the standard VUV intensity, photoemission measurements further reveal that strong modifications of the electronic properties of the NaCl surface occur. These are likely correlated with halogen emission, eventually resulting in the formation of Na clusters promoting low work function of parts of the sample surface. This study provides general guidelines for obtaining reliable spectroscopic measurements on alkali halide thin films on metals.
- 10 September 2013
- Published by SPIE-Intl Soc Optical Eng
- Vol. 8827, 882707
White fluorescent nano-fibers prepared by periodic organic hetero-epitaxy
To preserve the morphological properties of para-hexaphenyl (p-6P) based nano- bers and simultaneously tune their emission wavelength, periodic organic-organic hetero-epitaxy was utilized. Multilayer structures of p-6P and -sexithiophene (6T) have been prepared by hot wall epitaxy and analyzed by scanning force microscopy, uorescence microscopy, X-ray di raction and time resolved spectroscopy. We demonstrate that organic heteroepitaxy can be applied to produce multilayered nano- bers with high crystallinity, well de ned epitaxial relationships along di erent material phases, molecular azimuthal order, and long-range morphological homogeneity. It is shown, that it is possible to precisely control and tune the highly polarized photoluminescence emission of the nano- bers from the blue to the green and orange spectral regime by a variation of the 6T concentration. Remarkably, it is possible to prepare nano- bers emitting white polarized light.
- 10 September 2013
- Published by SPIE-Intl Soc Optical Eng
- Vol. 8827, 882707
White fluorescent nano-fibers prepared by periodic organic hetero-epitaxy
To preserve the morphological properties of para-hexaphenyl (p-6P) based nano- bers and simultaneously tune their emission wavelength, periodic organic-organic hetero-epitaxy was utilized. Multilayer structures of p-6P and -sexithiophene (6T) have been prepared by hot wall epitaxy and analyzed by scanning force microscopy, uorescence microscopy, X-ray di raction and time resolved spectroscopy. We demonstrate that organic heteroepitaxy can be applied to produce multilayered nano- bers with high crystallinity, well de ned epitaxial relationships along di erent material phases, molecular azimuthal order, and long-range morphological homogeneity. It is shown, that it is possible to precisely control and tune the highly polarized photoluminescence emission of the nano- bers from the blue to the green and orange spectral regime by a variation of the 6T concentration. Remarkably, it is possible to prepare nano- bers emitting white polarized light.
- 19 June 2013
- Published by Wiley in Angewandte Chemie International Edition
- Vol. 52 (30) , 7751-7755
Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling
Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.
- 19 June 2013
- Published by Wiley in Angewandte Chemie International Edition
- Vol. 52 (30) , 7751-7755
Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling
Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.
- 1 June 2013
- Published by Elsevier in Chemical Physics Letters
- Vol. 574, 51-55
A disordered layered phase in thin films of sexithiophene
- 1 June 2013
- Published by Elsevier in Chemical Physics Letters
- Vol. 574, 51-55
A disordered layered phase in thin films of sexithiophene
- 1 May 2013
- Published by Elsevier in Organic Electronics
- Vol. 14 (5) , 1323-1329
Origin of mechanical strain sensitivity of pentacene thin-film transistors
- 1 May 2013
- Published by Elsevier in Organic Electronics
- Vol. 14 (5) , 1323-1329
Origin of mechanical strain sensitivity of pentacene thin-film transistors
- 29 April 2013
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 117 (43) , 22285-22289
The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors
- 29 April 2013
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 117 (43) , 22285-22289
The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors
- 12 March 2013
- Published by Springer Nature in Nature Communications
- Vol. 4 (1) , 1588
Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
- 12 March 2013
- Published by Springer Nature in Nature Communications
- Vol. 4 (1) , 1588
Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors
Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.
- 4 February 2013
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 13 (3) , 1322-1328
Surface Induced Order of Solution Processed Caffeine Needles on Silica and Muscovite Mica
- 4 February 2013
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 13 (3) , 1322-1328
Surface Induced Order of Solution Processed Caffeine Needles on Silica and Muscovite Mica
- Open Access
- 26 November 2012
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 6 (12) , 10874-10883
Epitaxial Growth of π-Stacked Perfluoropentacene on Graphene-Coated Quartz
Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and “standing” films, we report a π-stacked arrangement of coplanar molecules in “flat-lying” films, which exhibit an exceedingly low π-stacking distance of only 3.07 Å, giving rise to significant electronic band dispersion along the π-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.
- 26 November 2012
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 6 (12) , 10874-10883
Open AccessEpitaxial Growth of π-Stacked Perfluoropentacene on Graphene-Coated Quartz
Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and “standing” films, we report a π-stacked arrangement of coplanar molecules in “flat-lying” films, which exhibit an exceedingly low π-stacking distance of only 3.07 Å, giving rise to significant electronic band dispersion along the π-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.
- 2 November 2012
- Published by Wiley in Advanced Functional Materials
- Vol. 23 (13) , 1628-1635
Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene
Time‐dependent photoemission spectroscopy is employed to study the kinetics of the hydro‐genation/deuteration reaction of graphene. Resulting in an unusual kinetic isotope effect, the graphene deuteration reaction proceeds faster than hydrogenation and leads to substantially higher maximum coverages of deuterium (D/C≈35% vs H/C≈25%). These results can be explained by the fact that in the atomic state H and D have a lower energy barrier to overcome in order to react with graphene, while in the molecular form the bond between two atoms must be broken before the capture on the graphene layer. More importantly, D has a higher desorption barrier than H due to quantum mechanical zero‐point energy effects related to the C–D or C–H stretch vibration. Molecular dynamics simulations based on a quantum mechanical electronic potential can reproduce the experimental trends and reveal the contribution of the constituent chemisorption, reflection, and associative desorption processes of H or D atoms onto graphene. Regarding the electronic structure changes, a tunable electron energy gap can be induced by both deuteration and hydrogenation.
- 2 November 2012
- Published by Wiley in Advanced Functional Materials
- Vol. 23 (13) , 1628-1635
Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene
Time‐dependent photoemission spectroscopy is employed to study the kinetics of the hydro‐genation/deuteration reaction of graphene. Resulting in an unusual kinetic isotope effect, the graphene deuteration reaction proceeds faster than hydrogenation and leads to substantially higher maximum coverages of deuterium (D/C≈35% vs H/C≈25%). These results can be explained by the fact that in the atomic state H and D have a lower energy barrier to overcome in order to react with graphene, while in the molecular form the bond between two atoms must be broken before the capture on the graphene layer. More importantly, D has a higher desorption barrier than H due to quantum mechanical zero‐point energy effects related to the C–D or C–H stretch vibration. Molecular dynamics simulations based on a quantum mechanical electronic potential can reproduce the experimental trends and reveal the contribution of the constituent chemisorption, reflection, and associative desorption processes of H or D atoms onto graphene. Regarding the electronic structure changes, a tunable electron energy gap can be induced by both deuteration and hydrogenation.