MOMartin Oehzelt

Martin Oehzelt

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Previous Organizations / Institutes

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Martin Oehzelt has a total of 221 co-authors. Here are the top co-authors by number of shared publications:


Latest Publications

  • Open Access

    Electronic properties and degradation upon VUV irradiation of sodium chloride on Ag(111) studied by photoelectron spectroscopy

    by Haibo Wang, Martin Oehzelt, Stefanie Winkler, Ruslan Ovsyannikov, Norbert Koch, Patrick Amsalem

    The growth as well as vacuum ultraviolet (VUV) radiation-induced degradation of sodium chloride (NaCl) on Ag(111) is investigated by ultraviolet and x-ray photoelectron spectroscopy. In line with previous scanning tunneling microscopy studies, our results confirm that NaCl grows initially as a bilayer before island growth starts. Simple spectroscopic methods for calibrating the closure of the NaCl bilayer are further presented. In addition, the energy level alignment is studied as a function of NaCl film thickness and VUV-light intensity. When measuring with ultra-low photon flux, a sharp interface dipole lowers the sample work function by 0.65 eV upon adsorption of the first bilayer, which is followed by vacuum level alignment for subsequently deposited layers. In contrast, measurements performed with standard photon fluxes, such as those provided by commercial He discharge lamps, shows ‘downward band-bending’-like characteristics in the NaCl films. Upon extended exposure time to the standard VUV intensity, photoemission measurements further reveal that strong modifications of the electronic properties of the NaCl surface occur. These are likely correlated with halogen emission, eventually resulting in the formation of Na clusters promoting low work function of parts of the sample surface. This study provides general guidelines for obtaining reliable spectroscopic measurements on alkali halide thin films on metals.


  • White fluorescent nano-fibers prepared by periodic organic hetero-epitaxy

    by G. Schwabegger, F. Quochi, G. Hernandez-Sosa, T. Djuric, G. Bongiovanni, A. Vollmer, M. Oehzelt, I. Salzmann, R. Resel, N. Koch, et al.

    To preserve the morphological properties of para-hexaphenyl (p-6P) based nano- bers and simultaneously tune their emission wavelength, periodic organic-organic hetero-epitaxy was utilized. Multilayer structures of p-6P and -sexithiophene (6T) have been prepared by hot wall epitaxy and analyzed by scanning force microscopy, uorescence microscopy, X-ray di raction and time resolved spectroscopy. We demonstrate that organic heteroepitaxy can be applied to produce multilayered nano- bers with high crystallinity, well de ned epitaxial relationships along di erent material phases, molecular azimuthal order, and long-range morphological homogeneity. It is shown, that it is possible to precisely control and tune the highly polarized photoluminescence emission of the nano- bers from the blue to the green and orange spectral regime by a variation of the 6T concentration. Remarkably, it is possible to prepare nano- bers emitting white polarized light.


  • Doping of Organic Semiconductors: Impact of Dopant Strength and Electronic Coupling

    by Henry Méndez, Georg Heimel, Andreas Opitz, Katrein Sauer, Patrick Barkowski, Martin Oehzelt, Junshi Soeda, Toshihiro Okamoto, Jun Takeya, Jean‐Baptiste Arlin, et al.

    Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative model based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible to discriminate the two models. The latter is clearly favored, suggesting strategies for the chemical design of more efficient molecular dopants.


  • A disordered layered phase in thin films of sexithiophene

    by Armin Moser, Ingo Salzmann, Martin Oehzelt, Alfred Neuhold, Heinz-Georg Flesch, Jan Ivanco, Sergiu Pop, Teodor Toader, Dietrich R.T. Zahn, Detlef-Matthias Smilgies, et al.


  • Origin of mechanical strain sensitivity of pentacene thin-film transistors

    by V. Scenev, P. Cosseddu, A. Bonfiglio, I. Salzmann, N. Severin, M. Oehzelt, N. Koch, J.P. Rabe


  • The Impact of Local Work Function Variations on Fermi Level Pinning of Organic Semiconductors

    by Stefanie Winkler, Johannes Frisch, Raphael Schlesinger, Martin Oehzelt, Ralph Rieger, Joachim Räder, Jürgen P. Rabe, Klaus Müllen, Norbert Koch


  • Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

    by Guanghao Lu, James Blakesley, Scott Himmelberger, Patrick Pingel, Johannes Frisch, Ingo Lieberwirth, Ingo Salzmann, Martin Oehzelt, Riccardo Di Pietro, Alberto Salleo, et al.

    Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.


  • Surface Induced Order of Solution Processed Caffeine Needles on Silica and Muscovite Mica

    by O. Werzer, B. Kunert, E. Roblegg, A. Zimmer, M. Oehzelt, R. Resel


  • Open Access

    Epitaxial Growth of π-Stacked Perfluoropentacene on Graphene-Coated Quartz

    by Ingo Salzmann, Armin Moser, Martin Oehzelt, Tobias Breuer, Xinliang Feng, Zhen-Yu Juang, Dmitrii Nabok, Raffaele G. Della Valle, Steffen Duhm, Georg Heimel, et al.

    Chemical-vapor-deposited large-area graphene is employed as the coating of transparent substrates for the growth of the prototypical organic n-type semiconductor perfluoropentacene (PFP). The graphene coating is found to cause face-on growth of PFP in a yet unknown substrate-mediated polymorph, which is solved by combining grazing-incidence X-ray diffraction with theoretical structure modeling. In contrast to the otherwise common herringbone arrangement of PFP in single crystals and “standing” films, we report a π-stacked arrangement of coplanar molecules in “flat-lying” films, which exhibit an exceedingly low π-stacking distance of only 3.07 Å, giving rise to significant electronic band dispersion along the π-stacking direction, as evidenced by ultraviolet photoelectron spectroscopy. Our study underlines the high potential of graphene for use as a transparent electrode in (opto-)electronic applications, where optimized vertical transport through flat-lying conjugated organic molecules is desired.


  • Kinetic Isotope Effect in the Hydrogenation and Deuteration of Graphene

    by Alessio Paris, Nikolay Verbitskiy, Alexei Nefedov, Ying Wang, Alexander Fedorov, Danny Haberer, Martin Oehzelt, Luca Petaccia, Dmitry Usachov, Denis Vyalikh, et al.

    Time‐dependent photoemission spectroscopy is employed to study the kinetics of the hydro‐genation/deuteration reaction of graphene. Resulting in an unusual kinetic isotope effect, the graphene deuteration reaction proceeds faster than hydrogenation and leads to substantially higher maximum coverages of deuterium (D/C≈35% vs H/C≈25%). These results can be explained by the fact that in the atomic state H and D have a lower energy barrier to overcome in order to react with graphene, while in the molecular form the bond between two atoms must be broken before the capture on the graphene layer. More importantly, D has a higher desorption barrier than H due to quantum mechanical zero‐point energy effects related to the C–D or C–H stretch vibration. Molecular dynamics simulations based on a quantum mechanical electronic potential can reproduce the experimental trends and reveal the contribution of the constituent chemisorption, reflection, and associative desorption processes of H or D atoms onto graphene. Regarding the electronic structure changes, a tunable electron energy gap can be induced by both deuteration and hydrogenation.