Hualiang Lv

Electromagnetic (EM) low‐observable technology is increasingly expected to simultaneously deliver ultrathin geometry, broadband response, dynamic adaptability, and multispectral compatibility ‐capabilities that conventional stealth materials struggle to achieve because of intrinsic constraints such as the Rozanov and Snoek limits and their largely static responses. This review systematically examines recent advances in two‐dimensional metamaterials (metasurfaces) from the perspective of cross‐scale material–structure synergy, with particular emphasis on customizable and intelligent electromagnetic manipulation across multiphysics domains. We first discuss conventional lossy and signature‐controllable materials and identify their performance bottlenecks. We then examine the fundamental mechanisms underlying metasurface‐enabled regulation, including wavefront shaping, localized resonance, and spatial dispersion, and review representative advances in EM, thermal, optical, and acoustic stealth. Particular attention is given to active tuning through electrical, optical, thermal, magnetic, and mechanical stimuli, as well as programmable coding, data‐driven inverse design, artificial intelligence, multispectral compatibility, and multifunctional integration. Finally, key challenges in conformal integration, environmental robustness, scalable fabrication, and coordinated multifunctionality are identified, and future opportunities in embodied intelligence, bionic design, embedded sensing‐control, low‐cost manufacturing, and standardization are discussed toward adaptive, intelligent, and multifunctional low‐observable systems.

Reconfigurable electronic states in insulating materials enable metal‐like transport while preserving the intrinsic robustness and functional versatility of insulating hosts, thereby redefining materials beyond the conventional metal–insulator dichotomy. However, obtaining such states remains extremely challenging owing to strong electronic localization inherent in insulating materials. We demonstrate a universal surface single‐atom engineering strategy for linear and deep programming of electronic transport in insulating oxides and nitrides, including SiO ₂ , Al ₂ O ₃ , and BN, by selectively inducing local symmetry breaking, effective bandgap compression, and impurity‐band percolation. Consequently, this strategy continuously narrows the bandgap and ultimately yields metallic transport characteristics with anomalously minimal temperature dependence. Furthermore, we apply single‐atom‐anchored SiO ₂ , an intrinsically electromagnetic wave‐transparent material, to shielding with a record‐high effectiveness of 98.6% for an ultrathin 80 µm film that also maintains stable performance over a temperature range of 300–800 K. This counterintuitive performance defies the conventional paradigm, demonstrating that an intrinsically insulating material can achieve electromagnetic shielding comparable to state‐of‐the‐art metals while avoiding the temperature‐induced performance degradation of metallic shielding materials. Overall, we believe that this study establishes single‐atom band engineering as a general strategy for programming electronic transport in insulating materials, with broad implications for advanced electronics and unconventional functionalities.

Lattice mismatch has long constrained alloy compositional design. Governed by the Hume-Rothery rules, severe atomic radius differences (δ) between the constituent elements of nano-alloys can lead to excessive lattice distortions or even phase separation. Therefore, synthesizing alloy nanoparticles with large δ-factors (>15%) is almost impossible, restricting structural and functional tunability. Here, we report a general plasma-assisted carbothermal flash sintering (PCFS) synthesis strategy to obtain sub-5 nm high-entropy alloys (HEAs) nanoparticles with δ-factors exceeding 15%. Plasma treatment helps compensate for the entropy reduction caused by high-δ, while non-equilibrium ultrafast synthesis prevents slow nucleation under thermodynamic steady-state conditions. Utilizing high-entropy to introduce medium-sized bridging elements, large atoms (lanthanides, >180 pm) and small atoms (Al) are successfully accommodated in a single-phase nanolattice with ordered lattice distortions. The resulting quasi-periodic lattice distortions (QPLD) formed via stress relief minimize structural defects and enable anomalous electronic and thermal transport properties. These nanoscale HEAs achieve an exceptional electromagnetic interference (EMI) shielding efficiency of ~99% at a thickness of only ~1.8 μm, which is two orders of magnitude thinner than conventional materials. This general strategy unlocks thousands of possible element combinations, providing a broad materials platform for advanced electronics, energy, and device applications.

Metal single atoms have long been recognized for their catalytic activity through strong local interactions with host substrates. Beyond catalysis, their potential to reconfigure substrate electronic structures surpassing the host's intrinsic limits remains largely unexplored. Here, we develop an atomically engineered band‐modulation strategy, in which representative d ‐series (Fe, Co, Ni, Cu) and p ‐series (In, Sn, Sb, Te) atoms are anchored on 2D frameworks, including MXenes, graphene, g‐C ₃ N ₄ , and MoS ₂ . These atoms act as quantum modulators, precisely reconfiguring substrate structures and inducing anomalous quantum effects, which yield distinctive phenomena, including band inversion, flattening, and van Hove singularities, features rarely attainable through conventional band‐engineering strategies. The tailored electronic landscape enables linear, voltage‐driven tuning of electrical behavior, achieving several tens of times enhancement in dielectric permittivity and a dynamic and continuous transition from semiconducting to conductive states, all realized under an exceptionally low bias (<1.0 V). These functionalities are extended to a flexible electromagnetic switch that achieves programmable control of signal transmission, absorption, and reflection, overcoming the persistent difficulty of dynamic electromagnetic regulation while operating at a record‐thin microscale thickness (∼600 µm). This work establishes an atomically engineered band‐modulation strategy as a versatile platform, paving the way for reconfigurable electronics and quantum devices.

Mitigating detrimental surface effects in nanometals is crucial for advancing applications in quantum magnetic storage and integrated circuits, as size reduction often experiences atomic distortion and vacancy formation, disrupting magnetic domains and electronic transport. Herein, we synthesize nano–high-entropy alloys (HEAs) anchored on two-dimensional high-entropy oxide nanosheets. By leveraging interfacial entropy compensation and the high-entropy effect, the triggered atomic rearrangements alleviate the inhomogeneous stress distribution in magnetic nanoparticles by mitigating unsaturated coordination and surface defects and reinforcing internal distortion, thereby suppressing surface effects. The anchored HEAs demonstrate stable sub–20-nanometer vortex magnetic domains, achieving an 80% enhancement in saturation magnetization and a 135% improvement in permeability, surpassing isolated HEAs and conventional ferromagnetic metals. Moreover, this enhancement enables more than 50% absorption efficiency across the wireless communication spectrum (3.3 to 6.0 gigahertz) with superior thermal stability (300 to 800 kelvins). This study establishes a pathway to enhance nanometal magnetoelectric properties for flexible, high-performance electromagnetic devices.

Dielectric materials are crucial in various fields, including catalysis, energy storage, flexible electronics, and biosensing, and have consequently attracted sustained research interest. Recent reviews have summarized advances in dielectric materials, emphasizing synthesis strategies and applications in specific fields. In practical operations, dielectric materials are often subjected to external physical stimuli such as temperature gradients, electric fields, and mechanical stresses, which drive coupled processes involving polarization, charge transport, and structural reconfiguration. These processes, typically occurring at the nano or atomic scale, decisively influence device performance and reliability. However, reviews on the dynamic dielectric properties of multi‐stimuli‐responsive composites are scarce, particularly from a nanoscale composition–structure–mechanism–function perspective. To bridge this gap, this review outlines the intrinsic properties of representative dielectric constituents and multidimensional design strategies. In addition, it provides a nanoscale analysis of the dynamic response mechanisms induced by external stimuli and their impact on performance, highlighting key challenges such as dielectric reversibility, long‐term stability, and controlled tuning under multiphysics conditions. The review concludes by emphasizing the opportunities for the use of dielectrics in artificial‐intelligence‐driven material discovery, predictive modeling, and multiphysics integration to guide the design of next‐generation responsive dielectric materials for adaptive devices.

Heterostructures, particularly those with inhomogeneous interfaces, are plagued by interface defects, energy level quantization, and increased electron localization, which result in poor electrical properties and limited applications. The development of interfacial electrical‐enhanced inhomogeneous heterostructures is highly desirable, yet remains a challenge. Herein, a general method is presented for synthesizing bimetallic sulfide inhomogeneous heterostructures through a 3d metal(M)‐induced entropy‐enhancement approach (M = Ni, Fe, Cu, Mn, and Zn). The entropy‐enhanced heterointerfaces, with dimensions less than 10 nm, promote the coexistence of multiple valence states in a random distribution at the interface, facilitating electron hopping between different metal ions. This phenomenon generates high‐density interface carriers and enables low‐loss electron transport, leading to the anomalous enhancement of interfacial electrical properties. It is demonstrated that the electrically enhanced interfacial behavior of the CoS₂/NiCo₂S₄ heterostructure results in a 100–200% improvement in dielectric properties compared to its single‐component counterparts. This enhancement broadens its potential as an effective electromagnetic wave absorber, helping to alleviate electromagnetic pollution. Effective electromagnetic absorption with a bandwidth of 4.64 GHz is achieved at a thickness of 1.5 mm. The work provides new insights into the study of anomalous physical behaviors at high‐entropy interfaces, such as topological states and magnetic properties.

Amorphous materials possess abundant local dipoles, however, spatial disorder leads to random orientations and restricted mobility, suppressing macroscopic polarization and limiting dielectric performance, thereby severely constraining their use in ferroelectrics, electromagnetic shielding, energy storage, and related applications. To address this challenge, a template‐assisted phase evolution strategy is proposed by loading monodispersed Fe ₃ O ₄ nanoparticles (≈10 nm) onto representative biomass‐derived amorphous carbon, followed by controlled carbothermal treatment. Interfacial reactions between the oxide and carbon generated nanopores, with pore edges enriched in quantifiable, highly oriented polar bonds. Meanwhile, the oxide nanoparticles evolved into yolk–shell structures with adjustable internal voids. These oriented dipoles enabled an active response to external high‐frequency EM fields, resulting in pronounced dielectric relaxation behavior and a sharp ≈60% enhancement in permittivity, as confirmed by frequency‐dependent dielectric measurements and theoretical calculations. The significantly improved dielectric polarization broadened their application in EM protection, achieving >90% absorption efficiency over a 5.6 GHz bandwidth and far exceeding that of typical carbon‐based composites. This work provides a versatile strategy for unlocking orientational polarization in amorphous systems, paving the way for advanced applications in electromagnetic wave absorption, energy storage, and adaptive electronics.

Halide perovskite materials excel in broad optoelectronic applications, and there is an urgent demand to develop perovskite-based integrated optoelectronic devices. However, the limitations posed by the incompatibility of perovskite thin film with wet lithography greatly hinder its potential in many important applications, including ultrahigh-density displays, high-resolution image sensors, high-density memristors, and integrated photonic circuitry. To tackle this bottleneck problem, we develop the self-aligned close-spaced sublimation growth of perovskite quantum wires and demonstrate 0.18-micrometer feature size perovskite patterns, meanwhile achieving a pixel density of 63,500 pixels per inch, the highest reported for perovskite. We showcase pixelation of perovskite quantum wires with color conversion films, addressing the need for full-color microdisplays. In addition, we demonstrate these films on curved substrates, holding promise for near-eye microdisplays. Processes shown here can also apply to other perovskite devices such as high-resolution displays, image sensing, and memristor arrays.