Peng Sheng

Institute for Materials Research, Tohoku University

*This is an algorithmically generated author record based on publicly available information.

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Peng Sheng has a total of 51 co-authors. Here are the top co-authors by number of shared publications:

Gang Ni
Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
2 shared publications
J.F. Yin
Department of Optics Science and Engineering, Fudan University, Shanghai 200433, PR China
2 shared publications
Jian-Ping Wang
University of Minnesota
2 shared publications
Masaki Mizuguchi
Nagoya University
2 shared publications
Masamitsu Hayashi
The University of Tokyo
2 shared publications
Q.Y. Jin
Department of Optics Science and Engineering, Fudan University, Shanghai 200433, PR China
2 shared publications

Latest Publications

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Cited by 1
- 20 April 2026
- Published by Elsevier in Vacuum
Thermal annealing–induced Ag/WO3/Ag plasmonic nanocavities for emission enhancement
by Shota Takahashi, Yusuke Takahashi, Takayuki Kiba, Midori Kawamura, Naofumi Ohtsu, Peng Sheng, Daisuke Ohori, Kazuhiko Endo
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- 20 April 2026
- Published by Elsevier in Vacuum
Open Access
Thermal annealing–induced Ag/WO3/Ag plasmonic nanocavities for emission enhancement
by Shota Takahashi, Yusuke Takahashi, Takayuki Kiba, Midori Kawamura, Naofumi Ohtsu, Peng Sheng, Daisuke Ohori, Kazuhiko Endo
Cited by 1
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Cited by 1
- 2 March 2026
- Published by IOP Publishing in Japanese Journal of Applied Physics
Ultrathin MgO-Spaced Ag nanocavities for emission enhancement via plasmonic resonance
by Peng Sheng, Shota Takahashi, Koki Kanemitsu, Takayuki Kiba, Midori Kawamura
We demonstrate a plasmon-enhanced photoluminescence platform based on Ag/MgO/Ag nanocavities formed by simple thermal annealing. A 5 nm MgO spacer preserves the flatness and reflectivity of the bottom Ag layer while enabling nanoparticle formation in the top Ag film. The resulting hybrid plasmon–cavity modes are modified by an overlaid Alq ₃ layer, producing spectral matching around 520 nm. Consequently, Alq ₃ emission is enhanced sixfold, exceeding the four-fold enhancement obtained with Ag nanoparticles alone. This lithography-free nanocavity provides a robust route toward efficient plasmon-enhanced light-emitting structures.
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- 2 March 2026
- Published by IOP Publishing in Japanese Journal of Applied Physics
Ultrathin MgO-Spaced Ag nanocavities for emission enhancement via plasmonic resonance
by Peng Sheng, Shota Takahashi, Koki Kanemitsu, Takayuki Kiba, Midori Kawamura
We demonstrate a plasmon-enhanced photoluminescence platform based on Ag/MgO/Ag nanocavities formed by simple thermal annealing. A 5 nm MgO spacer preserves the flatness and reflectivity of the bottom Ag layer while enabling nanoparticle formation in the top Ag film. The resulting hybrid plasmon–cavity modes are modified by an overlaid Alq ₃ layer, producing spectral matching around 520 nm. Consequently, Alq ₃ emission is enhanced sixfold, exceeding the four-fold enhancement obtained with Ag nanoparticles alone. This lithography-free nanocavity provides a robust route toward efficient plasmon-enhanced light-emitting structures.
Cited by 1
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Cited by 9
- 17 August 2022
- Published by AIP Publishing in Journal of Applied Physics
Thermal contribution in the electrical switching experiments with heavy metal/antiferromagnet structures
by Peng Sheng, Zhengyang Zhao, Onri Jay Benally, Delin Zhang, Jian-Ping Wang
We examine the thermal origin of the detected “saw-tooth” shaped Hall resistance ( $R_{xy}$ ) signals in the spin–orbit torque switching experiment for antiferromagnetic MnN. Compared with the results of the heavy metal/antiferromagnet bilayers (MnN/Ta), the qualitatively same “saw-tooth” shaped signals also appear in the samples with the heavy metal layer alone (either Ta or Pt) without the MnN layer. In addition, the $R_{xy}$ signal changes oppositely in the devices with Ta and Pt, due to the opposite temperature coefficient of resistivity of the two materials. All those results are consistent with the “localized Joule heating” mechanism in devices with Hall crosses geometry. Moreover, by utilizing a structure with separated writing current paths and Hall cross area, the quadratic relationship between $Δ R_{xy}$ and the writing current's amplitude is observed, which provides quantitative evidence of the thermal contribution. These results reveal the dominant thermal artifact in the widely used Hall crosses geometry for Néel vector probing and also provide a strategy to semi-quantitatively evaluate the thermal effect, which can shed light on a more conclusive experiment design.
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- 17 August 2022
- Published by AIP Publishing in Journal of Applied Physics
Thermal contribution in the electrical switching experiments with heavy metal/antiferromagnet structures
by Peng Sheng, Zhengyang Zhao, Onri Jay Benally, Delin Zhang, Jian-Ping Wang
We examine the thermal origin of the detected “saw-tooth” shaped Hall resistance ( $R_{xy}$ ) signals in the spin–orbit torque switching experiment for antiferromagnetic MnN. Compared with the results of the heavy metal/antiferromagnet bilayers (MnN/Ta), the qualitatively same “saw-tooth” shaped signals also appear in the samples with the heavy metal layer alone (either Ta or Pt) without the MnN layer. In addition, the $R_{xy}$ signal changes oppositely in the devices with Ta and Pt, due to the opposite temperature coefficient of resistivity of the two materials. All those results are consistent with the “localized Joule heating” mechanism in devices with Hall crosses geometry. Moreover, by utilizing a structure with separated writing current paths and Hall cross area, the quadratic relationship between $Δ R_{xy}$ and the writing current's amplitude is observed, which provides quantitative evidence of the thermal contribution. These results reveal the dominant thermal artifact in the widely used Hall crosses geometry for Néel vector probing and also provide a strategy to semi-quantitatively evaluate the thermal effect, which can shed light on a more conclusive experiment design.
Cited by 9
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Cited by 6
- 16 July 2021
- Published by AIP Publishing in Journal of Applied Physics
Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions
by Dhritiman Bhattacharya, Peng Sheng, Ahsanul Abeed, Zhengyang Zhao, Hongshi Li, Jian-Ping Wang, Supriyo Bandyopadhyay, Bin Ma, Jayasimha Atulasimha
We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease in the tunneling magnetoresistance ratio. The coercivities of the free and fixed layers of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.
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- 16 July 2021
- Published by AIP Publishing in Journal of Applied Physics
Surface acoustic wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions
by Dhritiman Bhattacharya, Peng Sheng, Ahsanul Abeed, Zhengyang Zhao, Hongshi Li, Jian-Ping Wang, Supriyo Bandyopadhyay, Bin Ma, Jayasimha Atulasimha
We show that a surface acoustic wave (SAW) applied across the terminals of a magnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel and antiparallel resistances of the MTJ, with the latter decreasing much more than the former. This results in a decrease in the tunneling magnetoresistance ratio. The coercivities of the free and fixed layers of the MTJ, however, are not affected significantly, suggesting that the SAW does not cause large-angle magnetization rotation in the magnetic layers through the inverse magnetostriction (Villari) effect at the power levels used. This study sheds light on the dynamical behavior of an MTJ under periodic compressive and tensile strain.
Cited by 6
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Cited by 2
- 18 May 2020
- Published by AIP Publishing in Applied Physics Letters
Publisher's Note: “Anomalous Nernst effect in Cox(MgO)1-x granular thin films” [Appl. Phys Lett. 116, 142403 (2020)]
by P. Sheng, T. Fujita, M. Mizuguchi
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- 18 May 2020
- Published by AIP Publishing in Applied Physics Letters
Publisher's Note: “Anomalous Nernst effect in Cox(MgO)1-x granular thin films” [Appl. Phys Lett. 116, 142403 (2020)]
by P. Sheng, T. Fujita, M. Mizuguchi
Cited by 2
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Cited by 16
- 6 April 2020
- Published by AIP Publishing in Applied Physics Letters
Anomalous Nernst effect in Cox(MgO)1-x granular thin films
by P. Sheng, T. Fujita, M. Mizuguchi
The anomalous Nernst effect (ANE) is investigated for 100 nm Co_x(MgO)_1-_x granular films as a function of the Co volume fraction (x) changes. The results show that by slightly adding MgO into the Co matrix, the anomalous Nernst angle (θ_AN) can be largely enhanced more than three times compared with that of pure Co, which also results in the obvious change in ANE voltage. The transverse conductivity $σ_{X Y}^{A H}$ vs the longitudinal conductivity $σ_{X X}$ shows distinct linear behavior in three regimes, which indicates different anomalous Hall effect (AHE) mechanisms. By qualitative Mott-relation analysis, we found that the non-monotonic dependence of ANE on x is associated with the change in AHE mechanisms.
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- 6 April 2020
- Published by AIP Publishing in Applied Physics Letters
Anomalous Nernst effect in Cox(MgO)1-x granular thin films
by P. Sheng, T. Fujita, M. Mizuguchi
The anomalous Nernst effect (ANE) is investigated for 100 nm Co_x(MgO)_1-_x granular films as a function of the Co volume fraction (x) changes. The results show that by slightly adding MgO into the Co matrix, the anomalous Nernst angle (θ_AN) can be largely enhanced more than three times compared with that of pure Co, which also results in the obvious change in ANE voltage. The transverse conductivity $σ_{X Y}^{A H}$ vs the longitudinal conductivity $σ_{X X}$ shows distinct linear behavior in three regimes, which indicates different anomalous Hall effect (AHE) mechanisms. By qualitative Mott-relation analysis, we found that the non-monotonic dependence of ANE on x is associated with the change in AHE mechanisms.
Cited by 16
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Cited by 176
- 3 November 2017
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
The spin Nernst effect in tungsten
by Peng Sheng, Yuya Sakuraba, Yong-Chang Lau, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi
The spin Nernst effect, direct conversion of heat current to spin current, is observed in W/CoFeB/MgO heterostructures.
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- 3 November 2017
- Published by American Association for the Advancement of Science (AAAS) in Science Advances
Top Cited Papers
Open Access
The spin Nernst effect in tungsten
by Peng Sheng, Yuya Sakuraba, Yong-Chang Lau, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi
The spin Nernst effect, direct conversion of heat current to spin current, is observed in W/CoFeB/MgO heterostructures.
Cited by 176
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Cited by 34
- 9 January 2017
- Published by AIP Publishing in Applied Physics Letters
Electric field modulation of the non-linear areal magnetic anisotropy energy
by Yong-Chang Lau, Peng Sheng, Seiji Mitani, Daichi Chiba, Masamitsu Hayashi
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ∼1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe the thickness dependence of the areal magnetic anisotropy energy can also account for the change in the areal VCMA efficiency. In this structure, the higher order term competes against the common interfacial VCMA, thereby reducing the efficiency at lower CoFeB thickness. The areal VCMA efficiency does not saturate even when the effective CoFeB thickness exceeds ∼1 nm. We consider the higher order term is related to the strain that develops at the CoFeB/MgO interface: as the average strain of the CoFeB layer changes with its thickness, the electronic structure of the CoFeB/MgO interface varies, leading to changes in areal magnetic anisotropy energy and VCMA efficiency.
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- 9 January 2017
- Published by AIP Publishing in Applied Physics Letters
Electric field modulation of the non-linear areal magnetic anisotropy energy
by Yong-Chang Lau, Peng Sheng, Seiji Mitani, Daichi Chiba, Masamitsu Hayashi
We study the ferromagnetic layer thickness dependence of the voltage-controlled magnetic anisotropy (VCMA) in gated CoFeB/MgO heterostructures with heavy metal underlayers. When the effective CoFeB thickness is below ∼1 nm, the VCMA efficiency of Ta/CoFeB/MgO heterostructures considerably decreases with decreasing CoFeB thickness. We find that a high order phenomenological term used to describe the thickness dependence of the areal magnetic anisotropy energy can also account for the change in the areal VCMA efficiency. In this structure, the higher order term competes against the common interfacial VCMA, thereby reducing the efficiency at lower CoFeB thickness. The areal VCMA efficiency does not saturate even when the effective CoFeB thickness exceeds ∼1 nm. We consider the higher order term is related to the strain that develops at the CoFeB/MgO interface: as the average strain of the CoFeB layer changes with its thickness, the electronic structure of the CoFeB/MgO interface varies, leading to changes in areal magnetic anisotropy energy and VCMA efficiency.
Cited by 34
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Cited by 403
- 29 February 2016
- Published by American Physical Society (APS) in Physical Review Letters
Spin Hall Magnetoresistance in Metallic Bilayers
by Junyeon Kim, Peng Sheng, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in $W / CoFeB$ compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the $HM / FM$ interface.
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- 29 February 2016
- Published by American Physical Society (APS) in Physical Review Letters
Top Cited Papers
Spin Hall Magnetoresistance in Metallic Bilayers
by Junyeon Kim, Peng Sheng, Saburo Takahashi, Seiji Mitani, Masamitsu Hayashi
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of a heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find a nearly tenfold increase of SMR in $W / CoFeB$ compared to previously studied HM/ferromagnetic insulator systems. The SMR increases with decreasing temperature despite the negligible change in the W layer resistivity. A model is developed to account for the absorption of the longitudinal spin current to the FM layer, one of the key characteristics of a metallic ferromagnet. We find that the model not only quantitatively describes the HM layer thickness dependence of SMR, allowing accurate estimation of the spin Hall angle and the spin diffusion length of the HM layer, but also can account for the temperature dependence of SMR by assuming a temperature dependent spin polarization of the FM layer. These results illustrate the unique role a metallic ferromagnetic layer plays in defining spin transmission across the $HM / FM$ interface.
Cited by 403
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Cited by 15
- 21 January 2013
- Published by AIP Publishing in Applied Physics Letters
Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells
by P. Sheng, F. Bonell, S. Miwa, T. Nakamura, Y. Shiota, S. Murakami, D. D. Lam, S. Yoshida, Y. Suzuki
We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW) states in the ultrathin Fe (001) electrode. However, resonant positions of QW states were systematically shifted by one monolayer when compared with the first-principles calculation results. X-ray absorption spectroscopy and magnetic circular dichroism measurements were also performed. While Fe oxide presence at Fe/MgO interface was ruled out, Fe/Cr intermixing could not be excluded. Hence, controlling the Fe/Cr interface may affect QW state.
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- 21 January 2013
- Published by AIP Publishing in Applied Physics Letters
Detailed analysis of spin-dependent quantum interference effects in magnetic tunnel junctions with Fe quantum wells
by P. Sheng, F. Bonell, S. Miwa, T. Nakamura, Y. Shiota, S. Murakami, D. D. Lam, S. Yoshida, Y. Suzuki
We investigated spin-dependent quantum interference effects in Cr(001)/wedge Fe(001)/MgO(001)/Fe(001) magnetic tunnel junctions by dI/dV measurements. dI/dV intensities were mapped two-dimensionally as a function of applied voltage and Fe thickness, indicating a clear signature of quantum well (QW) states in the ultrathin Fe (001) electrode. However, resonant positions of QW states were systematically shifted by one monolayer when compared with the first-principles calculation results. X-ray absorption spectroscopy and magnetic circular dichroism measurements were also performed. While Fe oxide presence at Fe/MgO interface was ruled out, Fe/Cr intermixing could not be excluded. Hence, controlling the Fe/Cr interface may affect QW state.
Cited by 15

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