Jierui Liang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Jierui Liang has a total of 76 co-authors. Here are the top co-authors by number of shared publications:
- Susan K. Fullerton-Shirey
Department of Chemical and Petroleum Engineering University of Pittsburgh Pittsburgh Pennsylvania USA
8 shared publications - Ke Xu
Rochester Institute of Technology
7 shared publications - Chris Leighton
Department of Chemical Engineering and Materials Science University of Minnesota Minneapolis Minnesota USA
6 shared publications - Cheng Gong
Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, USA
4 shared publications - Nileena Nandakumaran
University of Minnesota
4 shared publications Hasitha Suriya Arachchige
Department of Physics and Astronomy, University of Tennessee, Knoxville, USA
3 shared publications
Latest Publications
- 23 September 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (9)
Decoupling the high-temperature spin-state and insulator-metal transitions in LaCo O 3 via heteroepitaxial strain
- 23 September 2026
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 10 (9)
Decoupling the high-temperature spin-state and insulator-metal transitions in LaCo O 3 via heteroepitaxial strain
- Open Access
- 4 August 2025
- Published by Springer Nature in Nature Physics
- Vol. 21 (9) , 1497
Author Correction: High-efficiency optical training of itinerant two-dimensional magnets
- 4 August 2025
- Published by Springer Nature in Nature Physics
- Vol. 21 (9) , 1497
Open AccessAuthor Correction: High-efficiency optical training of itinerant two-dimensional magnets
- 23 July 2025
- Published by American Chemical Society (ACS) in ACS Nano
Limits on Topotactic Transformation Speed in Electrolyte-Gate La0.5Sr0.5CoO3-δ Electrochemical Transistors
Voltage-driven electrochemical cycling between fully oxygenated perovskite (P) and oxygen-vacancy-ordered brownmillerite (BM) phases is now well established in electrolyte-gated complex oxides such as perovskite cobaltites (e.g., La0.5Sr0.5CoO3-δ (LSCO)), enabling exceptionally wide-range reversible modulation of electronic, magnetic, thermal, and optical properties. Moving toward applications of such topotactic electrochemical transistors, progress has recently been made with cycling endurance, but the limits on operating speed remain poorly understood. We address this here in ion-gel-gate transistors based on epitaxial LSCO films, using comprehensive source-drain and gate current measurements in both frequency and time domains to assess the impact of gate voltage, side- vs top-gate geometry, and ion gel and LSCO thickness. We first establish how to rigorously define switching times in such transistors, emphasizing the inherent trade-off between ON/OFF ratio and speed. We then show unambiguously that room-temperature switching of these devices is limited by oxygen diffusion in the LSCO, not electric double layer formation in the electrolyte. Under optimized conditions with 10-unit-cell-thick P LSCO films, we thus achieve 4 source-drain current ON/OFF ratio, orders of magnitude improved over prior work. These times scales are analyzed in terms of oxygen diffusivities in the P and BM phases of LSCO, highlighting the clear role of the phase transformation and generating critical insight into routes to improved switching speed.
- 23 July 2025
- Published by American Chemical Society (ACS) in ACS Nano
Limits on Topotactic Transformation Speed in Electrolyte-Gate La0.5Sr0.5CoO3-δ Electrochemical Transistors
Voltage-driven electrochemical cycling between fully oxygenated perovskite (P) and oxygen-vacancy-ordered brownmillerite (BM) phases is now well established in electrolyte-gated complex oxides such as perovskite cobaltites (e.g., La0.5Sr0.5CoO3-δ (LSCO)), enabling exceptionally wide-range reversible modulation of electronic, magnetic, thermal, and optical properties. Moving toward applications of such topotactic electrochemical transistors, progress has recently been made with cycling endurance, but the limits on operating speed remain poorly understood. We address this here in ion-gel-gate transistors based on epitaxial LSCO films, using comprehensive source-drain and gate current measurements in both frequency and time domains to assess the impact of gate voltage, side- vs top-gate geometry, and ion gel and LSCO thickness. We first establish how to rigorously define switching times in such transistors, emphasizing the inherent trade-off between ON/OFF ratio and speed. We then show unambiguously that room-temperature switching of these devices is limited by oxygen diffusion in the LSCO, not electric double layer formation in the electrolyte. Under optimized conditions with 10-unit-cell-thick P LSCO films, we thus achieve 4 source-drain current ON/OFF ratio, orders of magnitude improved over prior work. These times scales are analyzed in terms of oxygen diffusivities in the P and BM phases of LSCO, highlighting the clear role of the phase transformation and generating critical insight into routes to improved switching speed.
- 4 June 2025
- Published by Springer Nature in Nature Physics
- Vol. 21 (7) , 1118-1124
High-efficiency optical training of itinerant two-dimensional magnets
- 4 June 2025
- Published by Springer Nature in Nature Physics
- Vol. 21 (7) , 1118-1124
High-efficiency optical training of itinerant two-dimensional magnets
- 2 May 2025
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 19 (18) , 17627-17639
High Metal–Insulator Topotactic Cycling Endurance in Electrochemically Gated La0.5Sr0.5CoO3−δ Probed by Humidity-Dependent Operando Fourier Transform Infrared Spectroscopy
Electrochemical gating of perovskite La0.5Sr0.5CoO3-δ (LSCO) films yields large room-temperature, low-power, nonvolatile, complex refractive index changes across a metal-insulator transition. However, the underlying topotactic perovskite to brownmillerite phase transformation has demonstrated limited cycling endurance, and the role of H2O in this electrochemical cycling is not well established. Here, we explore extended cycling endurance in ion-gel-gate LSCO electrochemical transistors through relative-humidity-dependent operando FTIR transmittance measurements, enabling correlation of the metal-insulator optical changes in LSCO to corresponding electrochemical features. We show that higher-humidity gating significantly lowers the threshold voltage for oxygen reinsertion into LSCO and thus improves optical property reversibility, but concurrently induces LSCO etching and Pt contact dewetting that limit prolonged cycling. With informed selection of a 15% relative humidity environment and Au device contacts, we then demonstrate sustained cycling of LSCO films between distinct metallic and insulating optical states for over 40 cycles, with sustained but dampened optical modulation to 100 cycles. These findings set a metal-insulator optical property endurance record for an electrochemically gated perovskite oxide undergoing a topotactic perovskite ↔ brownmillerite phase change, further motivate the use of ion-gel-gated LSCO films for tunable infrared photonic applications such as thermal camouflage and thermoregulation, and establish useful guiding principles to enhance cycling endurance in electrochemically tunable functional oxides.
- 2 May 2025
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 19 (18) , 17627-17639
High Metal–Insulator Topotactic Cycling Endurance in Electrochemically Gated La0.5Sr0.5CoO3−δ Probed by Humidity-Dependent Operando Fourier Transform Infrared Spectroscopy
Electrochemical gating of perovskite La0.5Sr0.5CoO3-δ (LSCO) films yields large room-temperature, low-power, nonvolatile, complex refractive index changes across a metal-insulator transition. However, the underlying topotactic perovskite to brownmillerite phase transformation has demonstrated limited cycling endurance, and the role of H2O in this electrochemical cycling is not well established. Here, we explore extended cycling endurance in ion-gel-gate LSCO electrochemical transistors through relative-humidity-dependent operando FTIR transmittance measurements, enabling correlation of the metal-insulator optical changes in LSCO to corresponding electrochemical features. We show that higher-humidity gating significantly lowers the threshold voltage for oxygen reinsertion into LSCO and thus improves optical property reversibility, but concurrently induces LSCO etching and Pt contact dewetting that limit prolonged cycling. With informed selection of a 15% relative humidity environment and Au device contacts, we then demonstrate sustained cycling of LSCO films between distinct metallic and insulating optical states for over 40 cycles, with sustained but dampened optical modulation to 100 cycles. These findings set a metal-insulator optical property endurance record for an electrochemically gated perovskite oxide undergoing a topotactic perovskite ↔ brownmillerite phase change, further motivate the use of ion-gel-gated LSCO films for tunable infrared photonic applications such as thermal camouflage and thermoregulation, and establish useful guiding principles to enhance cycling endurance in electrochemically tunable functional oxides.
- 28 February 2025
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 17 (10) , 15603-15612
Role of Hidden Grenier Phases in Topotactic Phase Transitions in La1–xSrxCoO3−δ
The perovskite cobaltites La1-xSrxCoO3-δ have been proposed as promising candidates for neuromorphic devices, since in this class of materials a topotactically driven metal-insulator transition (MIT) can be triggered by a moderate applied voltage. The control and minimization of such voltages is important to optimize the efficiency of neuromorphic devices. By using a combination of density functional theory calculations and operando X-ray diffraction measurements on electrolyte-gated epitaxial films, here we investigate the impact of hidden Grenier phases on the nonmonotonic change in threshold voltage for varying Sr concentrations. We show that the threshold voltage for the reduction of La1-xSrxCoO3 to brownmillerite La1-xSrxCoO2.5 is influenced by the presence of intermediate La1-xSrxCoO2.67 Grenier phases, which are challenging to detect. We discuss how the stability of these Grenier phases depends on the Sr concentration, cation ordering and the epitaxial strain applied to La1-xSrxCoO3-δ films. In particular, our calculations show that by applying a biaxial strain of varied strength, one may obtain either metallic or insulating intermediate Grenier phases, which in turn may be controlled by the choice of the substrate. Our findings provide fresh insights into the importance of atomic scale control of topotactic transitions in La1-xSrxCoO3-δ films for neuromorphic computing applications.
- 28 February 2025
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 17 (10) , 15603-15612
Role of Hidden Grenier Phases in Topotactic Phase Transitions in La1–xSrxCoO3−δ
The perovskite cobaltites La1-xSrxCoO3-δ have been proposed as promising candidates for neuromorphic devices, since in this class of materials a topotactically driven metal-insulator transition (MIT) can be triggered by a moderate applied voltage. The control and minimization of such voltages is important to optimize the efficiency of neuromorphic devices. By using a combination of density functional theory calculations and operando X-ray diffraction measurements on electrolyte-gated epitaxial films, here we investigate the impact of hidden Grenier phases on the nonmonotonic change in threshold voltage for varying Sr concentrations. We show that the threshold voltage for the reduction of La1-xSrxCoO3 to brownmillerite La1-xSrxCoO2.5 is influenced by the presence of intermediate La1-xSrxCoO2.67 Grenier phases, which are challenging to detect. We discuss how the stability of these Grenier phases depends on the Sr concentration, cation ordering and the epitaxial strain applied to La1-xSrxCoO3-δ films. In particular, our calculations show that by applying a biaxial strain of varied strength, one may obtain either metallic or insulating intermediate Grenier phases, which in turn may be controlled by the choice of the substrate. Our findings provide fresh insights into the importance of atomic scale control of topotactic transitions in La1-xSrxCoO3-δ films for neuromorphic computing applications.
- Open Access
- 1 May 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (5)
Publisher’s Note: “Direct neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO2.5 and La0.5Sr0.5CoO2.5 thin films” [APL Mater. 12, 041123 (2024)]
This article was originally published online on 18 April 2024 with an unnecessary period included in the chemical compounds La0.5Sr0.5CoO2.5 and La0.5Sr0.5CoO3− This article was originally published online on 18 April 2024 with an unnecessary period included in the chemical compounds La0.5Sr0.5CoO2.5 and La0.5Sr0.5CoO3−
- 1 May 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (5)
Open AccessPublisher’s Note: “Direct neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO2.5 and La0.5Sr0.5CoO2.5 thin films” [APL Mater. 12, 041123 (2024)]
This article was originally published online on 18 April 2024 with an unnecessary period included in the chemical compounds La0.5Sr0.5CoO2.5 and La0.5Sr0.5CoO3− This article was originally published online on 18 April 2024 with an unnecessary period included in the chemical compounds La0.5Sr0.5CoO2.5 and La0.5Sr0.5CoO3−
- Open Access
- 1 April 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (4)
Direct neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO2.5 and La0.5Sr0.5CoO2.5 thin films
Epitaxial cobaltites have emerged as exemplary materials for electrochemical gating, in large part due to their topotactic perovskite (P) ↔ brownmillerite (BM) transformations. SrCoO3−δ, for example, can be cycled between metallic ferromagnetic P SrCoO3 and insulating BM SrCoO2.5, realizing exceptional modulation of electronic, thermal, and optical properties. It is often presumed that such cycling also generates ferromagnetic–antiferromagnetic (F-AF) modulation due to the G-type AF order in bulk SrCoO2.5. Little is understood about magnetism in thin-film BM SrCoO2.5, however, meaning that the true magnetic property modulation is unclear. We address this here through a neutron diffraction study of BM La1−xSrxCoO2.5 films at x = 0.5 and 1.0. Lightly compressively strained SrCoO2.5 films are shown to retain G-type AF order, albeit with suppressed Néel temperature (∼340 K). Of high interest for AF spintronics, room-temperature F–AF cycling is thus possible across the SrCoO3-δ P ↔ BM transformation. At x = 0.5, however, BM La0.5Sr0.5CoO2.5 films are found to exhibit no detectable G-type AF order but instead weak F order (Curie temperature ∼115 K), unveiling a La0.5Sr0.5CoO3−δ phase diagram with two distinct F phases. These results thus uncover new, unanticipated magnetic phase behavior in these materials, in addition to being directly relevant to cobaltite-based magnetoionics.
- 1 April 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (4)
Open AccessDirect neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO2.5 and La0.5Sr0.5CoO2.5 thin films
Epitaxial cobaltites have emerged as exemplary materials for electrochemical gating, in large part due to their topotactic perovskite (P) ↔ brownmillerite (BM) transformations. SrCoO3−δ, for example, can be cycled between metallic ferromagnetic P SrCoO3 and insulating BM SrCoO2.5, realizing exceptional modulation of electronic, thermal, and optical properties. It is often presumed that such cycling also generates ferromagnetic–antiferromagnetic (F-AF) modulation due to the G-type AF order in bulk SrCoO2.5. Little is understood about magnetism in thin-film BM SrCoO2.5, however, meaning that the true magnetic property modulation is unclear. We address this here through a neutron diffraction study of BM La1−xSrxCoO2.5 films at x = 0.5 and 1.0. Lightly compressively strained SrCoO2.5 films are shown to retain G-type AF order, albeit with suppressed Néel temperature (∼340 K). Of high interest for AF spintronics, room-temperature F–AF cycling is thus possible across the SrCoO3-δ P ↔ BM transformation. At x = 0.5, however, BM La0.5Sr0.5CoO2.5 films are found to exhibit no detectable G-type AF order but instead weak F order (Curie temperature ∼115 K), unveiling a La0.5Sr0.5CoO3−δ phase diagram with two distinct F phases. These results thus uncover new, unanticipated magnetic phase behavior in these materials, in addition to being directly relevant to cobaltite-based magnetoionics.
- 7 June 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (6) , L061001
New coercivities and Curie temperatures emerged in van der Waals homostructures ofStacking of two-dimensional van der Waals (vdW) materials has emerged as a vital approach for investigating the complex interplay between coexisting materials, leading to novel electronic, photonic, and spintronic phenomena such as strong electronic correlation, enhanced Zeeman splitting of excitons, and the magnetic proximity effect. While most of the previous focus was on the electronic and photonic properties of vdW hetero-/homostructures, the study of magnetism in hetero-/homostructures remains lacking, though phenomena such as layer-dependent magnetism already highlighted the critical role of interlayer coupling in magnetism of layered systems. Here, we report an interesting two-step magnetic hysteresis loop in the homostructure of the layered vdW magnet (FGT). The two coercivities in the homostructure differ from that of each constituent FGT layer, indicating that the two constituents interact mutually but do not merge into a thicker uniform material. The Curie temperature () of the homostructure is in between that of the thinner and thicker constituents, further implying that the two constituent layers interact yet without forming a naturally occurring thicker layer. Our results highlight the unexplored opportunities that the rich interplay within vdW magnet homostructures can be employed to create emerging magnetic properties and develop novel multistate devices.- 7 June 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (6) , L061001
New coercivities and Curie temperatures emerged in van der Waals homostructures ofStacking of two-dimensional van der Waals (vdW) materials has emerged as a vital approach for investigating the complex interplay between coexisting materials, leading to novel electronic, photonic, and spintronic phenomena such as strong electronic correlation, enhanced Zeeman splitting of excitons, and the magnetic proximity effect. While most of the previous focus was on the electronic and photonic properties of vdW hetero-/homostructures, the study of magnetism in hetero-/homostructures remains lacking, though phenomena such as layer-dependent magnetism already highlighted the critical role of interlayer coupling in magnetism of layered systems. Here, we report an interesting two-step magnetic hysteresis loop in the homostructure of the layered vdW magnet (FGT). The two coercivities in the homostructure differ from that of each constituent FGT layer, indicating that the two constituents interact mutually but do not merge into a thicker uniform material. The Curie temperature () of the homostructure is in between that of the thinner and thicker constituents, further implying that the two constituent layers interact yet without forming a naturally occurring thicker layer. Our results highlight the unexplored opportunities that the rich interplay within vdW magnet homostructures can be employed to create emerging magnetic properties and develop novel multistate devices.- 31 January 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (1) , 014008
Facile integration of giant exchange bias in heterostructures by atomic layer depositionExchange bias arises from the interfacial exchange coupling in ferromagnet-antiferromagnet bilayers and manifests as a horizontal shift of the magnetic hysteresis loop, constituting a critical component underpinning a broad range of magnetoresistive logic and memory devices. The facile implementation of exchange bias in van der Waals (vdW) magnets would be a key step towards practical devices for emerging vdW spintronics. Here, we report an easy approach to establishing strong exchange bias in the vdW magnet by a single-step process—atomic layer deposition (ALD) of oxides on . We successfully created exchange bias of 300–1500 Oe in , and heterostructures, at 130 K. Control experiments showed that increasing the oxidant pulse duration in each ALD cycle or utilizing the stronger oxidant can enhance the exchange bias strength, revealing the key role of the ALD oxidants. Our systematic work elucidates the essential role of ALD-enabled oxidization of in the formation of exchange bias, and establishes ALD of oxides as a facile, controllable, and generally effective approach to creating giant exchange bias in vdW magnets, representing an integral advance towards practical vdW spintronic devices.- 31 January 2023
- Published by American Physical Society (APS) in Physical Review Materials
- Vol. 7 (1) , 014008
Facile integration of giant exchange bias in heterostructures by atomic layer depositionExchange bias arises from the interfacial exchange coupling in ferromagnet-antiferromagnet bilayers and manifests as a horizontal shift of the magnetic hysteresis loop, constituting a critical component underpinning a broad range of magnetoresistive logic and memory devices. The facile implementation of exchange bias in van der Waals (vdW) magnets would be a key step towards practical devices for emerging vdW spintronics. Here, we report an easy approach to establishing strong exchange bias in the vdW magnet by a single-step process—atomic layer deposition (ALD) of oxides on . We successfully created exchange bias of 300–1500 Oe in , and heterostructures, at 130 K. Control experiments showed that increasing the oxidant pulse duration in each ALD cycle or utilizing the stronger oxidant can enhance the exchange bias strength, revealing the key role of the ALD oxidants. Our systematic work elucidates the essential role of ALD-enabled oxidization of in the formation of exchange bias, and establishes ALD of oxides as a facile, controllable, and generally effective approach to creating giant exchange bias in vdW magnets, representing an integral advance towards practical vdW spintronic devices.