Brian D. Gerardot
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Brian D. Gerardot has a total of 520 co-authors. Here are the top co-authors by number of shared publications:
P. M. Petroff
Materials Department, University of California, Santa Barbara, California 93106, USA
45 shared publicationsK. Karrai
LMU 2 Department für Physik, Center for Nanoscience Geschwister-Scholl-Platz 1, 80539 Munich, Germany
28 shared publications- Mauro Brotons-Gisbert
Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
28 shared publications R. J. Warburton
27 shared publications- Paul A. Dalgarno
Heriot-Watt Univ. (United Kingdom)
23 shared publications - Antonio Badolato
Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627, USA
20 shared publications
Latest Publications
- 22 October 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (11) , 1722-1723
Wigner crystals get dressed
- 22 October 2026
- Published by Springer Nature in Nature Physics
- Vol. 22 (11) , 1722-1723
Wigner crystals get dressed
- Open Access
- 11 June 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 137 (6)
Decoy-state quantum key distribution over 227 km with a frequency-converted telecom single-photon source
We implement a decoy-state quantum key distribution scheme using a telecom C-band single-emitter source. The decoy states are created by varying the optical excitation of the quantum emitter to modulate the photon-number distribution. We provide an analysis of our scheme based on existing security proofs, allowing the calculation of secret key rates, including finite key effects. This enables us to demonstrate, with a realistic single-photon source, positive secret key rates using our scheme over 227 km of optical fiber, equivalent to a loss tolerance one order of magnitude greater than nondecoy schemes. This Letter broadens the scope of single-photon sources in future quantum networks by enabling long-distance quantum key distribution with realistic levels of single-photon purity.
- 11 June 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 137 (6)
Open AccessDecoy-state quantum key distribution over 227 km with a frequency-converted telecom single-photon source
We implement a decoy-state quantum key distribution scheme using a telecom C-band single-emitter source. The decoy states are created by varying the optical excitation of the quantum emitter to modulate the photon-number distribution. We provide an analysis of our scheme based on existing security proofs, allowing the calculation of secret key rates, including finite key effects. This enables us to demonstrate, with a realistic single-photon source, positive secret key rates using our scheme over 227 km of optical fiber, equivalent to a loss tolerance one order of magnitude greater than nondecoy schemes. This Letter broadens the scope of single-photon sources in future quantum networks by enabling long-distance quantum key distribution with realistic levels of single-photon purity.
- Open Access
- 6 February 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Highly tunable band structure in ferroelectric R-stacked bilayer WSe2
Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric rhombohedral stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of rhombohedral stacked bilayer WSe 2 to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the Λ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of rhombohedral stacked WSe 2 , establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.
- 6 February 2026
- Published by Springer Nature in Nature Communications
- Vol. 17 (1)
Open AccessHighly tunable band structure in ferroelectric R-stacked bilayer WSe2
Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric rhombohedral stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of rhombohedral stacked bilayer WSe 2 to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the Λ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of rhombohedral stacked WSe 2 , establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.
- Open Access
Roadmap: 2D Materials for Quantum Technologies
Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.
Open AccessRoadmap: 2D Materials for Quantum Technologies
Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.
- Open Access
- 4 September 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (3)
Learning the dynamics of Markovian open quantum systems from experimental data
We present a Bayesian algorithm to identify explainable processes generating open quantum system dynamics, described by a Lindblad master equation, that are compatible with measured experimental data. The algorithm, based on a Markov chain Monte Carlo approach, assumes the energy levels of the system are known and outputs a ranked list of interpretable master-equation models that produce predicted measurement traces that closely match experimental data. We benchmark our algorithm on quantum optics experiments performed on single and pairs of quantum emitters. The latter case opens the possibility of cooperative emission effects and additional complexity due to the possible interplay between photon and phonon influences on the dynamics. Our algorithm retrieves various minimal models that are consistent with the experimental data, and which can provide a closer fit to measured data than previously suggested and physically expected approximate models. Our results represent an important step towards automated systems characterization with an approach that is capable of working with diverse and tomographically incomplete input data. This may help with the development of theoretical models for unknown quantum systems as well as providing scientists with alternative interpretations of the data that they might not have originally envisioned and enabling them to challenge their original hypotheses.
- 4 September 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (3)
Open AccessLearning the dynamics of Markovian open quantum systems from experimental data
We present a Bayesian algorithm to identify explainable processes generating open quantum system dynamics, described by a Lindblad master equation, that are compatible with measured experimental data. The algorithm, based on a Markov chain Monte Carlo approach, assumes the energy levels of the system are known and outputs a ranked list of interpretable master-equation models that produce predicted measurement traces that closely match experimental data. We benchmark our algorithm on quantum optics experiments performed on single and pairs of quantum emitters. The latter case opens the possibility of cooperative emission effects and additional complexity due to the possible interplay between photon and phonon influences on the dynamics. Our algorithm retrieves various minimal models that are consistent with the experimental data, and which can provide a closer fit to measured data than previously suggested and physically expected approximate models. Our results represent an important step towards automated systems characterization with an approach that is capable of working with diverse and tomographically incomplete input data. This may help with the development of theoretical models for unknown quantum systems as well as providing scientists with alternative interpretations of the data that they might not have originally envisioned and enabling them to challenge their original hypotheses.
- Open Access
Highly tunable band structure in ferroelectric R-stacked bilayer WSe$_2$
Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of R-stacked bilayer WSe$_2$ to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the $Λ$ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of R-stacked WSe$_2$, establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities.Open AccessHighly tunable band structure in ferroelectric R-stacked bilayer WSe$_2$
Transition metal dichalcogenide homobilayers unite two frontiers of quantum materials research: sliding ferroelectricity, arising from rhombohedral (R) stacking, and moiré quantum matter, emerging from small-angle twisting. The spontaneous polarization of ferroelectric R-stacked homobilayers produces a highly tunable band structure, which, together with strain-induced piezoelectricity, governs the topology and correlated electronic phases of twisted bilayers. Here we present a systematic low-temperature optical spectroscopy study of R-stacked bilayer WSe$_2$ to quantitatively establish its fundamental electronic and ferroelectric properties. Exciton and exciton-polaron spectroscopy under doping reveals a pronounced electron-hole asymmetry that confirms type-II band alignment, with the conduction and valence band edges located at the $Λ$ and K valleys, respectively. Through distinct excitonic responses and tunable interlayer-intralayer exciton hybridization under displacement fields, we uncover the coexistence of AB and BA ferroelectric domains. Using exciton-polarons as a probe, we directly measure the intrinsic polarization field and extract the interlayer potential. Finally, we demonstrate electric-field-driven symmetric switching of the valence band maximum, attributed to ferroelectric domain switching. These results provide a complete experimental picture of the band alignment, spontaneous polarization field, and domain dynamics of R-stacked WSe$_2$, establishing key parameters to understand twisted bilayers and enabling new ferroelectric and excitonic device opportunities. - Open Access
- 25 April 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 134 (16) , 166901
Quadrupolar and Dipolar Excitons in BilayerWe report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2 H -stacked bilayer MoSe 2 . The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe 2 . We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intra- and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe 2 bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena.
- 25 April 2025
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 134 (16) , 166901
Open AccessQuadrupolar and Dipolar Excitons in BilayerWe report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2 H -stacked bilayer MoSe 2 . The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe 2 . We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intra- and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe 2 bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena.
- Open Access
Quadrupolar and Dipolar Excitons in Bilayer 2$H$-MoSe$_2$
We report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2$H$-stacked bilayer MoSe$_2$. The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe$_2$. We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intravalley and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe$_2$ bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena.
Open AccessQuadrupolar and Dipolar Excitons in Bilayer 2$H$-MoSe$_2$
We report the experimental observation of quadrupolar exciton states in the reflectance contrast spectrum of 2$H$-stacked bilayer MoSe$_2$. The application of a vertical electric field results in a quadratic energy redshift of these quadrupolar excitons, in contrast to the linear energy splitting observed in the coexisting dipolar excitons within the bilayer MoSe$_2$. We perform helicity-resolved reflectance contrast measurements to investigate the spin and valley configurations of the quadrupolar exciton states as a function of applied vertical electric and magnetic fields. Comparing our results with a phenomenological coupled-oscillator model indicates that the electric- and magnetic-field dependence of the quadrupolar exciton states can be attributed to the intravalley and intervalley hybridization of spin-triplet interlayer excitons with opposite permanent dipole moments, mediated by interlayer hole tunneling. These results position naturally stacked MoSe$_2$ bilayers as a promising platform to explore electric-field-tunable many-body exciton phenomena.
- Open Access
Interlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles
Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist angle constraints leads to layer hybridized and moiré excitons which can be widely engineered. This review covers fundamental aspects of IXs including correlation phenomena as well as the consequence of moiré superlattices with a strong focus on TMD homo- and hetero-bilayers.
Open AccessInterlayer and moiré excitons in atomically thin double layers: from individual quantum emitters to degenerate ensembles
Interlayer excitons (IXs), composed of electron and hole states localized in different layers, excel in bilayers composed of atomically thin van der Waals materials such as semiconducting transition metal dichalcogenides (TMDs) due to drastically enlarged exciton binding energies, exciting spin-valley properties, elongated lifetimes, and large permanent dipoles. The latter allows modification by electric fields and the study of thermalized bosonic quasiparticles, from the single particle level to interacting degenerate dense ensembles. Additionally, the freedom to combine bilayers of different van der Waals materials without lattice or relative twist angle constraints leads to layer hybridized and moiré excitons which can be widely engineered. This review covers fundamental aspects of IXs including correlation phenomena as well as the consequence of moiré superlattices with a strong focus on TMD homo- and hetero-bilayers.
- Open Access
- 1 July 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (7)
Optical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers
α-RuCl3, a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl3 nanoflakes with thicknesses below 100 nm on SiO2/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of −0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl3 thickness.
- 1 July 2024
- Published by AIP Publishing in APL Materials
- Vol. 12 (7)
Open AccessOptical contrast analysis of α-RuCl3 nanoflakes on oxidized silicon wafers
α-RuCl3, a narrow-band Mott insulator with a large work function, offers intriguing potential as a quantum material or as a charge acceptor for electrical contacts in van der Waals devices. In this work, we perform a systematic study of the optical reflection contrast of α-RuCl3 nanoflakes on oxidized silicon wafers and estimate the accuracy of this imaging technique to assess the crystal thickness. Via spectroscopic micro-ellipsometry measurements, we characterize the wavelength-dependent complex refractive index of α-RuCl3 nanoflakes of varying thickness in the visible and near-infrared. Building on these results, we simulate the optical contrast of α-RuCl3 nanoflakes with thicknesses below 100 nm on SiO2/Si substrates under different illumination conditions. We compare the simulated optical contrast with experimental values extracted from optical microscopy images and obtain good agreement. Finally, we show that optical contrast imaging allows us to retrieve the thickness of the RuCl3 nanoflakes exfoliated on an oxidized silicon substrate with a mean deviation of −0.2 nm for thicknesses below 100 nm with a standard deviation of only 1 nm. Our results demonstrate that optical contrast can be used as a non-invasive, fast, and reliable technique to estimate the α-RuCl3 thickness.