Akitoshi Okino

Plasma-mediated vapor generation atomic absorption spectrometry (PMVG-AAS) is an environmentally friendly and highly matrix-resistant technique for determining mercury (Hg).

Zirconia orthodontic brackets exhibit favorable mechanical and esthetic properties; however, their chemically inert surfaces can limit adhesion to resin cements. This study evaluated the effect of multi-gas atmospheric plasma irradiation on the shear bond strength (SBS) of zirconia brackets. Zirconia brackets were treated with nitrogen (N₂), argon (Ar), or air plasma for 3 and 10 s and compared with untreated controls and conventional alumina-sandblasted specimens. Surface wettability was assessed by contact angle measurements, and surface chemical changes were analyzed using Fourier transform infrared (FT-IR) spectroscopy. After 10 s of plasma treatment, the water-contact angle decreased from 64.3° ± 8.4° in the untreated group to 17.9° ± 6.4°, 18.8° ± 2.7°, and 16.8° ± 5.3° with Ar, N₂, and air, respectively. For SBS testing, zirconia brackets were bonded to bovine enamel, stored in distilled water at 37 °C for 24 h, and subsequently tested (n = 12–15 per group). The mean SBS was 20.99 ± 2.87 MPa for the untreated group, 25.50 ± 2.40 MPa for the sandblasted group, and 23.63 ± 3.33, 23.99 ± 3.26, and 23.98 ± 3.58 MPa after 10-s Ar, N₂, and air plasma treatment, respectively. FT-IR revealed no new absorption peaks. Within the limitations of this study, multi-gas atmospheric plasma treatment markedly reduced the apparent water-contact angle measured on flat zirconia specimens, whereas its effect on SBS relative to the untreated group was not statistically significant.

This study investigates the formation mechanism of lactic-acid-derived coatings produced by open-air atmospheric-pressure plasma polymerization. A comparison of nebulization and bubbling precursor-delivery methods using FT-IR and XPS showed that the bubbling method facilitated plasma-assisted chemical bonding, including the possible formation of copper(II) lactate-like interfacial species and the retention of carbonyl-containing functional groups. However, the present dataset does not provide direct, discriminating evidence for a specific metal-lactate interfacial species, and alternative interpretations such as adsorption, oxidation, hydroxylation, or generic oxygenated carbon deposition cannot be excluded. Time-dependent analysis revealed a transition from oxygen-rich functional layers at short plasma exposure to carbon-rich overlayers at longer exposure, suggesting a fragmentation-recombination mechanism that is consistent with the formation of a metal-lactate-like interfacial region and a carbon-rich overlayer, while alternative interpretations related to signal attenuation and non-uniform coverage remain possible. Antibacterial testing revealed that the observed bacterial responses were not attributable to an intrinsic antibacterial property of the deposited films, but were instead strongly dependent on the underlying substrate chemistry and exposure time. C1100 retained the inherent antibacterial activity of copper, SUS430 showed no activity due to the absence of film formation, and SPCC exhibited only a transient effect attributed to lactic-acid-induced local acidification. Overall, the study elucidates the plasma-assisted deposition mechanism of lactic-acid-derived coatings under open-air conditions and highlights the critical role of interface chemistry in achieving stable and substrate-independent functional properties.

Atmospheric-pressure plasma-enhanced chemical vapor deposition (AP-PECVD) enables low-temperature coating in open air, yet the interplay between precursor activation and ambient-derived species remains unclear. Here, thin films from an amine precursor are deposited using a helium plasma and characterized by gas chromatography–mass spectrometry (GC-MS), a quartz crystal microbalance (QCM), and X-ray photoelectron spectroscopy (XPS). GC-MS indicates partial precursor conversion and formation of oxygen- and nitrogen-containing products, consistent with participation of ambient air and moisture. QCM identifies a limited precursor-concentration window in which mass increases monotonically during plasma exposure and remains constant after shutdown; outside this window, post-discharge mass loss occurs, indicating desorption of weakly bound species. XPS confirms carbon-rich films incorporating oxygen- and nitrogen-containing functionalities and complete substrate coverage at higher precursor concentrations.

High-sensitivity multi-element analysis of low-volume samples remains a challenge in plasma-based analytical methods because optimal excitation conditions differ among elements and conventional steady-state plasma require relatively large sample volumes. In this study, we developed a voltage-modulated helium plasma in which the applied voltage was continuously varied over short time intervals to dynamically control the plasma energy state. The fundamental characteristics of plasma were evaluated in terms of gas temperature, emission spectrum, and excitation temperature. Under steady-state operation, plasma length, gas temperature, and excitation temperature increased with increasing applied voltage, confirming that the plasma energy state can be controlled by applied voltage. In the voltage-modulated plasma, emission intensity and excitation temperature responded rapidly to voltage changes, enabling the generation of plasma with different energy states within a short time. Notably, the excitation temperature, one of the key indicators of the plasma energy state, was dynamically varied over a wide range of approximately 1900–3600 K. In addition, voltage modulation effectively suppressed the overall increase in plasma gas temperature caused by Joule heating, while maintaining high-energy plasma states during high-voltage periods. These results demonstrate that voltage-modulated plasma generation enables rapid switching between energy states optimized for different elements, offering a practical strategy for high-sensitivity multi-element analysis with significantly reduced sample consumption. The proposed method is particularly suitable for the analysis of small-volume and heat-sensitive samples. AbstractSection Graphical abstract

We developed a low-particle emission linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.

We developed a particle-free linear atmospheric plasma device for hydrophilizing silicon wafers, aiming to improve semiconductor manufacturing processes. The device generates a stable plasma curtain using argon or helium gas under specific frequency and power conditions, enabling large-area surface treatment without causing damage. Experimental results demonstrated uniform hydrophilization, characterized by a substantial reduction in water contact angle and minimal particle emission, outperforming conventional jet-type plasma systems. TOF-SIMS analysis confirmed the absence of metal contamination, validating the device’s cleanliness. This technology offers a promising alternative to wet chemical treatments, contributing to environmentally friendly and efficient wafer bonding processes.

Cholesterol is a primary lipid molecule in the brain that contains one-fourth of the total body cholesterol. Abnormal cholesterol homeostasis is associated with neurodegenerative disorders. Mass spectrometry imaging (MSI) technique is a powerful tool for studying lipidomics and metabolomics. Among the MSI techniques, desorption electrospray ionization-MSI (DESI-MSI) has been used advantageously to study brain lipidomics due to its soft and ambient ionization nature. However, brain cholesterol is poorly ionized. To this end, we have developed a new method for detecting brain cholesterol by DESI-MSI using low-temperature plasma (LTP) pretreatment as an ionization enhancement. In this method, the brain sections were treated with LTP for 1 and 2 min prior to DESI-MSI analyses. Interestingly, the MS signal intensity of cholesterol (at m/z 369.35 [M + H - H₂O]⁺) was more than 2-fold higher in the 1 min LTP-treated brain section compared to the untreated section. In addition, we detected cholesterol, more specifically excluding isomers by targeted-DESI-MSI in multiple reaction monitoring (MRM) mode and similar results were observed: the signal intensity of each cholesterol transition (m/z 369.4 → 95.1, 109.1, 135.1, 147.1, and 161.1) was increased by more than 2-fold due to 1 min LTP treatment. Cholesterol showed characteristic distributions in the fiber tract region, including the corpus callosum and anterior commissure, anterior part of the brain where LTP markedly (p < 0.001) enhanced the cholesterol intensity. In addition, the distributions of some unknown analytes were exclusively detected in the LTP-treated section. Our study revealed LTP pretreatment as a potential strategy to ionize molecules that show poor ionization efficiency in the MSI technique.

Dielectric barrier discharge (DBD)-based technology is considered a promising alternative for controlling indoor air pollutants. However, its limited processing capacity and lack of design techniques have restricted its use in practical applications. This paper introduces a methodology for designing upscaled DBD reactors with a processing capacity of up to 1000 L/min for treating high-flow-rate gases to mitigate indoor air pollution. A ten-layer high-flow-rate DBD reactor was constructed, with fundamental characterizations, including electrical and spectroscopic measurements, conducted to verify the feasibility of the proposed methodology. In particular, the flow paths of the ten-layer DBD reactor were optimized by incorporating an air diffuser and perforated metal plates, all without significant modifications. Computational fluid dynamics simulations showed a remarkably improved velocity uniformity (0.35 m/s to 0.04 m/s, as evidenced by the velocity standard deviation) in the 10 flow channels. These simulation results were consistent with the experimental results, wherein the velocity standard deviation reduced from 1.38 m/s to 0.13 m/s. Moreover, multi-gas plasma ignition for up to six gas species and high-flow-rate plasma generation of up to 1000 L/min were achieved. These results provide the foundation for developing DBD technologies for practical applications in high-flow-rate gas treatment, particularly for controlling indoor air pollution.

Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.