Rongfeng Zhu
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Rongfeng Zhu has a total of 19 co-authors. Here are the top co-authors by number of shared publications:
- Bijun Fang
School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, National Experimental Demonstration Center for Materials Science and Engineering, Changzhou University, Changzhou 213164, China
2 shared publications Haiqing Xu
2 shared publications- Haosu Luo
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
2 shared publications - Jianwei Chen
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201800, China
2 shared publications Jing Zhao
2 shared publications- Xi’aN Wang
Artificial Crystal Research Center, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
2 shared publications
Latest Publications
- Open Access
A Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
Mn:0.15Pb(In1/2Nb1/2)O3-0.55Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 109 cmHz1/2W−1, nearly three times higher than in commercial LiTaO3 detectors.
Open AccessA Two-Step Annealing Method to Enhance the Pyroelectric Properties of Mn:PIMNT Chips for Infrared Detectors
Mn:0.15Pb(In1/2Nb1/2)O3-0.55Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (Mn:PIMNT) pyroelectric chips were prepared by a two-step annealing method. For the two steps, annealing temperatures dependence of microstructure, defects, surface stress, surface roughness, dielectric properties and pyroelectric properties were studied comprehensively. The controlling factors influencing the pyroelectric properties of the Mn:PIMNT crystals were analyzed and the optimum annealing temperature ranges for the two steps were determined: 600–700 °C for the first step and 500–600 °C for the second step. The pyroelectric properties of the thin Mn:PIMNT chips were significantly enhanced by the two-step annealing method via tuning oxygen vacancies and eliminating surface stress. Based on Mn:PIMNT pyroelectric chips annealed at the most favorable conditions (annealed at 600 °C for the first step and 500 °C for the second step), infrared detectors were prepared with specific detectivity D* = 1.63 × 109 cmHz1/2W−1, nearly three times higher than in commercial LiTaO3 detectors.
- 6 December 2019
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 103 (4) , 2575-2586
Achieving single domain in rhombohedral and tetragonal Mn‐doped Pb(In 1/2 Nb 1/2 )‐Pb(Mg 1/3 Nb 2/3 )‐PbTiO 3 crystals for infrared detecting applications
The [111]‐oriented rhombohedral Mn‐doped 0.15Pb(In 1/2 Nb 1/2 )‐0.55Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.30PbTiO 3 (Mn:PIMNT(15/55/30)) crystal and the [001]‐oriented tetragonal Mn‐doped 0.29Pb(In 1/2 Nb 1/2 )‐0.29Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.42PbTiO 3 (Mn:PIMNT(29/29/42)) crystal were poled under different conditions. The pyroelectric performance of the two crystals as a function of poling temperature, as well as the relationship with ferroelectric domain configuration and phase structure was investigated systematically. The pyroelectric properties of the two crystals enhance with rising the poling temperature, which can be attributed to the improvement of the single state. And for the rhombohedral Mn:PIMNT(15/55/30) crystal locating near morphotropic phase boundary (MPB), the increase of tetragonal phase induces the deterioration of pyroelectric properties. Due to more residual tetragonal phase, the pyroelectric coefficient of the Mn:PIMNT(15/55/30) crystal poled at 150°C is lower than that poled at 100°C. In general, both the crystals poled above T C achieve nearly single state, exhibiting the best pyroelectric properties with relatively high Curie temperature ( T C ), where P = 9.71 × 10 −4 C m −2 K −1 , F i = 3.88 × 10 −10 m V −1 , F v = 0.068 m 2 C −1 and F d = 29.7 × 10 −5 Pa −1/2 for the rhombohedral Mn:PIMNT(15/55/30) crystal ( T C = 171°C) and P = 6.78 × 10 −4 C m −2 K −1 , F i = 2.71 ×10 −10 mV −1 , F v = 0.1 m 2 C −1 , F d = 23.54 × 10 −5 Pa −1/2 for the tetragonal Mn:PIMNT(29/29/42) single crystal ( T C = 251°C), meeting the stable operation of infrared detector at relatively high environmental temperatures.
- 6 December 2019
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 103 (4) , 2575-2586
Achieving single domain in rhombohedral and tetragonal Mn‐doped Pb(In 1/2 Nb 1/2 )‐Pb(Mg 1/3 Nb 2/3 )‐PbTiO 3 crystals for infrared detecting applications
The [111]‐oriented rhombohedral Mn‐doped 0.15Pb(In 1/2 Nb 1/2 )‐0.55Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.30PbTiO 3 (Mn:PIMNT(15/55/30)) crystal and the [001]‐oriented tetragonal Mn‐doped 0.29Pb(In 1/2 Nb 1/2 )‐0.29Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.42PbTiO 3 (Mn:PIMNT(29/29/42)) crystal were poled under different conditions. The pyroelectric performance of the two crystals as a function of poling temperature, as well as the relationship with ferroelectric domain configuration and phase structure was investigated systematically. The pyroelectric properties of the two crystals enhance with rising the poling temperature, which can be attributed to the improvement of the single state. And for the rhombohedral Mn:PIMNT(15/55/30) crystal locating near morphotropic phase boundary (MPB), the increase of tetragonal phase induces the deterioration of pyroelectric properties. Due to more residual tetragonal phase, the pyroelectric coefficient of the Mn:PIMNT(15/55/30) crystal poled at 150°C is lower than that poled at 100°C. In general, both the crystals poled above T C achieve nearly single state, exhibiting the best pyroelectric properties with relatively high Curie temperature ( T C ), where P = 9.71 × 10 −4 C m −2 K −1 , F i = 3.88 × 10 −10 m V −1 , F v = 0.068 m 2 C −1 and F d = 29.7 × 10 −5 Pa −1/2 for the rhombohedral Mn:PIMNT(15/55/30) crystal ( T C = 171°C) and P = 6.78 × 10 −4 C m −2 K −1 , F i = 2.71 ×10 −10 mV −1 , F v = 0.1 m 2 C −1 , F d = 23.54 × 10 −5 Pa −1/2 for the tetragonal Mn:PIMNT(29/29/42) single crystal ( T C = 251°C), meeting the stable operation of infrared detector at relatively high environmental temperatures.