Beata Ewa Kardynał

Control of magnetic order through optical manipulation of orbital states can be realized in a wide range of materials, including insulators. In the latter case, electrons are excited into different electronic states, whose character may be a complex result of spin-orbit-lattice coupling. Here, we use a combination of polarization-resolved photoluminescence spectroscopy and density functional theory calculations to study excited Cr ³⁺ ions in bulk, insulating, antiferromagnetic CrCl ₃ . Our results demonstrate a temperature-dependent preferential polarization direction below ~17 K, which reorients in the presence of an applied in-plane magnetic field. Density functional theory calculations reveal a local distortion of the ligand field and the generation of out-of-plane spin and orbital moments, following the excitation of Cr ³⁺ ion. These changes link the photoluminescence polarization to the magnetic state of CrCl ₃ . Our findings provide insight into the electronic structure of excited-state Cr ³⁺ ions and suggest that CrCl ₃ is a promising candidate for opto-orbitronic applications.

The gas sensitivity of field-effect structures with 2D-MoS ₂ channels selectively grown between Mo electrodes using the Mo-CVD method was investigated by measuring the effect of molecular adsorption from air on the device source-drain current ( I _sd ).

Cryogenic confocal microscopy is a powerful method for studying solid state quantum devices such as single photon sources and optically controlled qubits. While the vast majority of such studies have been conducted at temperatures of a few Kelvin, experiments involving fragile quantum effects often require lower operating temperatures. To also allow for electrical dynamic control, microwave connectivity is required. For polarization-sensitive studies, free space optical access is advantageous compared to fiber coupling. Here we present a confocal microscope in a dilution refrigerator providing all the above features at temperatures below 100 mK. The installed high frequency cabling meets the requirements for state-of-the-art spin qubit experiments. As another unique advantage of our system, the sample fitting inside a large puck can be exchanged while keeping the cryostat cold with minimal realignment. Assessing the performance of the instrument, we demonstrate confocal imaging, sub-nanosecond modulation of the emission wavelength of a suitable sample, and an electron temperature of 76 mK. While the instrument was constructed primarily with the development of optical interfaces to electrically controlled qubits in mind, it can be used for many experiments involving quantum transport, solid state quantum optics, and microwave-optical transducers.

Surface phonon-polaritons propagating along interfaces of polar dielectrics coexist with excitons in many van der Waals heterostructures, so understanding their mutual interactions is of great interest. Here, we investigate the type I surface phonon polariton of hBN via low-temperature resonant-Raman spectroscopy in hBN/WSe2 heterostructures. The resonantly enhanced hBN surface phonon polariton (SPhP) Raman signal, when laser energy is such that the scattered photons have energy close to that of the WSe2 excitons, enables detailed characterization of type I SPhP in hBN even when hBN is one monolayer thick. We find that the measured bandwidth of the SPhP Raman signal depends on the thicknesses of the hBN layer. We are able explain the experimental data using transfer matrix method simulations of SPhP dispersions providing that we assume the Raman scattering to be momentum non-conserving, as could be the case if localized WSe2 exciton states participated in the process. We further show that resonant Raman scattering from SiO2 SPhP can also be mediated by WSe$_2$.

Self-assembled quantum dots (QDs) based on III–V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer (WL) which forms during the Stranski–Krastanov growth of QDs can limit their performance. Here, we investigate WL formation during QD growth by the droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs WL in these droplet epitaxy QDs, even in the absence of distinguishable WL luminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs QDs leads to a significant reduction in the emission wavelength of the WL to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements. However increasing the amount of Ga deposited does not suppress the formation of a WL under the growth conditions used here.

In this work, we study ultra-low energy implantation into MoS₂ monolayers to evaluate the potential of the technique in two-dimensional materials technology. We use ⁸⁰Se⁺ ions at the energy of 20 eV and with fluences up to 5.0·10¹⁴ cm⁻². Raman spectra of the implanted films show that the implanted ions are predominantly incorporated at the sulfur sites and MoS_2−2xSe_2x alloys are formed, indicating high ion retention rates, in agreement with the predictions of molecular dynamics simulations of Se ion irradiation on MoS₂ monolayers. We found that the ion retention rate is improved when implantation is performed at an elevated temperature of the target monolayers. Photoluminescence spectra reveal the presence of defects, which are mostly removed by post-implantation annealing at 200 °C, suggesting that, in addition to the Se atoms in the substitutional positions, weakly bound Se adatoms are the most common defects introduced by implantation at this ion energy.

The rich optical properties of transition metal dichalcogenide monolayers (TMD-MLs) render these materials promising candidates for the design of new optoelectronic devices. Despite the large number of excitonic complexes in TMD-MLs, the main focus has been placed on optically bright neutral excitons. Spin-forbidden dark excitonic complexes have been addressed for basic science purposes, but not for applications. We report on spin-forbidden dark excitonic complexes in ML WSe₂ as an ideal system for the facile generation of radially polarized light beams. Furthermore, the spatially resolved polarization of photoluminescence beams can be exploited for basic research on excitons in two-dimensional materials.