Lluis Lopez-Conesa

Gallium nitride (GaN) nanowires (NWs) have been fabricated by top-down etching from GaN heteroepitaxial films, which provides an accurate control of their position and dimensions. However, these NWs contain, similar to the initial GaN films, high density of structural defects such as threading dislocations (TDs). In this work, different strategies to reduce the density of defects along the NWs have been compared based on two different wet etching approaches followed by a rapid thermal annealing (RTA) at 750 °C. The addition of a 30 nm SiN_x coating is also explored. The defects and strain/stress along the NWs have been studied by high resolution transmission electron microscopy, diffraction contrast imaging in two-beam conditions and 4D STEM, as well as strain maps calculated from scanning precession electron diffraction measurements. RTA reduced the density of TDs at the middle of GaN NWs with bare surfaces by approximately 25%. The reduction increased to approximately 70% by RTA of GaN NWs with surfaces coated by amorphous SiN_x, which is attributed to enhancement of dislocation movements by stresses induced from differential thermal expansion of GaN and SiN_x. These results suggest a process route that, if optimized and combined with reduction of NW diameter, could establish etching as an efficient fabrication method for high crystal quality GaN NWs.

The nanoscale magnetic configuration of self-assembled groups of magnetite 40 nm cubic nanoparticles has been investigated by means of electron holography in the transmission electron microscope (TEM). The arrangement of the cubes in the form of chains driven by the alignment of their dipoles of single nanocubes is assessed by the measured in-plane magnetic induction maps, in good agreement with theoretical calculations.

Black TiO₂ has demonstrated a great potential for a variety of renewable energy technologies. However, its practical application is heavily hindered due to lack of efficient hydrogenation methods and a deeper understanding of hydrogenation mechanisms. Here, a simple and straightforward hot wire annealing (HWA) method is presented to prepare black TiO₂ (H–TiO₂) nanorods with enhanced photo‐electrochemical (PEC) activity by means of atomic hydrogen [H]. Compared to conventional molecular hydrogen approaches, the HWA shows remarkable effectiveness without any detrimental side effects on the device structure, and simultaneously the photocurrent density of H–TiO₂ reaches 2.5 mA cm⁻² (at 1.23 V vs reversible hydrogen electrode (RHE)). Due to the controllable and reproducible [H] flux, the HWA can be developed as a standard hydrogenation method for black TiO₂. Meanwhile, the relationships between the wire temperatures, structural, optical, and photo‐electrochemical properties are systematically investigated to verify the improved PEC activity. Furthermore, the density functional theory (DFT) study provides a comprehensive insight not only into the highly efficient mechanism of the HWA approach but also its favorably low‐energy‐barrier hydrogenation pathway. The findings will have a profound impact on the broad energy applications of H–TiO₂ and contribute to the fundamental understanding of its hydrogenation.

Transparent metallic oxides are pivotal materials in information technology, photovoltaics, or even in architecture. They display the rare combination of metallicity and transparency in the visible range because of weak interband photon absorption and weak screening of free carriers to impinging light. However, the workhorse of current technology, indium tin oxide (ITO), is facing severe limitations and alternative approaches are needed. AMO₃ perovskites, M being a nd¹ transition metal, and A an alkaline earth, have a genuine metallic character and, in contrast to conventional metals, the electron–electron correlations within the nd¹ band enhance the carriers effective mass (m*) and bring the transparency window limit (marked by the plasma frequency, ω_p*) down to the infrared. Here, it is shown that epitaxial strain and carrier concentration allow fine tuning of optical properties (ω_p*) of SrVO₃ films by modulating m* due to strain‐induced selective symmetry breaking of 3d‐t_2g(xy, yz, xz) orbitals. Interestingly, the DC electrical properties can be varied by a large extent depending on growth conditions whereas the optical transparency window in the visible is basically preserved. These observations suggest that the harsh conditions required to grow optimal SrVO₃ films may not be a bottleneck for their future application.

Multilayers consisting of silicon nanocrystals (Si NCs) and SiO₂ are successfully fabricated by electron beam evaporation, using pure Si and SiO₂ targets in an oxygen‐rich atmosphere for alternately depositing silicon‐rich oxide (SRO) layers and SiO₂ barriers, respectively. A post‐deposition annealing process is carried out at different temperatures in order to achieve the Si precipitation in the form of nanocrystals. The stoichiometry of the layers is determined by X‐ray photoelectron spectroscopy, which confirms the controlled silicon oxidation in order to attain SRO layers. Transmission electron microscopy and Raman‐scattering measurements confirm the presence of crystalline Si‐nanoprecipitates. Photoluminescence spectra from the Si NC samples can be deconvolved into two contributions, whose dynamics suggest that two different luminescent centers are responsible for the optical emission of the samples.

Interface‐dominated materials such as nanocrystalline thin films have emerged as an enthralling class of materials able to engineer functional properties of transition metal oxides widely used in energy and information technologies. In particular, it has been proven that strain‐induced defects in grain boundaries of manganites deeply impact their functional properties by boosting their oxygen mass transport while abating their electronic and magnetic order. In this work, the origin of these dramatic changes is correlated for the first time with strong modifications of the anionic and cationic composition in the vicinity of strained grain boundary regions. We are also able to alter the grain boundary composition by tuning the overall cationic content in the films, which represents a new and powerful tool, beyond the classical space charge layer effect, for engineering electronic and mass transport properties of metal oxide thin films useful for a collection of relevant solid‐state devices.

The atomic structure of nanoparticles can be easily determined by transmission electron microscopy. However, obtaining atomic-resolution chemical information about the individual atomic columns is a rather challenging endeavor. Here, crystalline monodispersed spinel Fe₃O₄/Mn₃O₄ core–shell nanoparticles have been thoroughly characterized in a high-resolution scanning transmission electron microscope. Electron energy-loss spectroscopy (EELS) measurements performed with atomic resolution allow the direct mapping of the Mn²⁺/Mn³⁺ ions in the shell and the Fe²⁺/Fe³⁺ in the core structure. This enables a precise understanding of the core–shell interface and of the cation distribution in the crystalline lattice of the nanoparticles. Considering how the different oxidation states of transition metals are reflected in EELS, two methods of performing a local evaluation of the cation inversion in spinel lattices are introduced. Both methods allow the determination of the inversion parameter in the iron oxide core and manganese oxide shell, as well as detecting spatial variations in this parameter, with atomic resolution. X-ray absorption measurements on the whole sample confirm the presence of cation inversion. These results present a significant advance toward a better correlation of the structural and functional properties of nanostructured spinel oxides.

In this work, through high resolution transmission electron microscopy (HRTEM) and image simulation, the origins of the reduced reflectivity values measured for a nearly lattice‐matched GaN/InAlN distributed Bragg reflector (DBR) are investigated. HRTEM images reveal significant structural defects in the GaN semiperiods, such as coexistence of wurtzite and zinc blende phases and zinc‐blende twinned domains, which contribute to the experimentally observed decrease in reflectivity. Contact regions arising because of the superposition of both cubic and hexagonal GaN polytypes and/or cubic twinned domains are modeled and used to simulate HRTEM images that confirm the experimental phase contrast and hence the validity of the proposed models.

The achievement of an efficient all‐Si electrically‐pumped light emitter is a major milestone in present optoelectronics still to be fulfilled. Silicon nanocrystals (Si NCs) are an attractive material which, by means of the quantum confinement effect, allow attaining engineered bandgap visible emission from Si by controlling the NC size. In this work, SiO₂‐embedded Si NCs are employed as an active layer within a light‐emitting device structure. It is demonstrated that the use of an additional thin Si₃N₄ interlayer within the metal–insulator–semiconductor device design induces an enhanced minority carrier injection from the substrate, which in turn increases the efficiency of sequential carrier injection under pulsed electrical excitation. This results in a substantial increase in the electroluminescence efficiency of the device. Here, the effect of this Si₃N₄ interlayer on the structural, optical, electrical, and electro‐optical properties of a Si NC‐based light emitter is reported, and the physics underlying these results is discussed.