Shun-Wei Liu

Vacuum deposition offers a scalable, industry-compatible route for perovskite optoelectronics, yet efficient and spectrally stable emission remains limited by uncontrolled crystallization and defect-mediated nonradiative recombination. Here, we incorporate phenethylammonium bromide into a co-evaporated cesium bromide and lead bromide emissive layer for green vacuum-deposited perovskite light-emitting diodes. Phenethylammonium bromide regulates crystallization, modifies the local coordination environment, suppresses excessive grain growth, and improves film uniformity, thereby reducing trap-assisted recombination and enhancing radiative efficiency. The optimized devices achieve a maximum external quantum efficiency of 10.2%, a current efficiency of 36.5 cd A ⁻¹ , a power efficiency of 35.8 lm W ⁻¹ , and a luminance above 12,600 cd m ⁻² . The emission peaks at 518 nm with a full width at half maximum of 20 nm and remains spectrally stable under varying drive conditions. The devices exhibit an operational lifetime of 4388 s at an initial luminance of 500 cd m ⁻² .

Photodetectors with intrinsic wavelength selectivity could eliminate color filters in imaging systems, but narrowband organic absorbers often exhibit limited efficiency. Here, we report a vacuum-processed organic photodetector that includes color selectivity with carrier amplification. The device combines a narrowband organic absorber with a diluted TAPC:C60 photomultiplication layer, where isolated C60 sites trap electrons, induce interfacial band bending, and promote hole-tunneling injection. This architecture delivers an external quantum efficiency (EQE) of 2394%, a specific detectivity of 3.04 × 1012 Jones, a linear dynamic range of 127 dB, and microsecond response. Replacing only the absorber produces blue-, green-, and red-selective photodetectors with peak EQE of 350, 570, and 783%, respectively. The resulting photodetectors enable full-color image reconstruction with an average color difference of 1.75 relative to the silicon system using a standard 24-color calibration target. Our results provide a versatile route to high-gain color-selective photodetectors for filter-free colorful imaging.

A fully vacuum-deposited 0D Cs ₄ PbI ₅ Br interlayer passivates defects, removes Pb ⁰ , suppresses nonradiative losses, and boosts CsPbI ₂ Br solar-cell efficiency from 9.34% to 13.39%, with 42.6% efficiency under 300 lux.

Perovskite photodiodes have attracted increasing attention for next‐generation imaging and sensing; however, their practical deployment remains hindered by elevated noise, device‐to‐device variability, and limited operational reliability compared to established silicon technologies. These limitations largely originate from interfacial defects and uncontrolled carrier recombination in solution‐processed perovskite films. Here we present a vacuum‐engineered perovskite photodiode architecture that enables ultralow‐noise operation with high reproducibility and imaging‐level performance. By constructing the perovskite structure through a controlled multilayer design, interfacial defect density is effectively suppressed, leading to reduced electrical noise and stable charge transport. The resulting devices exhibit an ultralow dark current density of 2.31 × 10 ⁻¹¹ A cm ⁻² at 0.2 V, external quantum efficiency exceeding 80% across the visible spectrum, and a wide linear dynamic range of 130 dB, together with a −3 dB bandwidth of 0.33 MHz. These performance characteristics enable high‐fidelity full‐color imaging using a single‐pixel scanning approach, demonstrating accurate image reconstruction with low noise. The devices further maintain over 80% of their initial performance after 500 h of continuous illumination, highlighting their operational stability. This work establishes a general strategy for achieving low‐noise and reliable perovskite photodetectors, providing a pathway toward scalable, high performance imaging systems beyond conventional silicon‐based technologies.

We report an ultra-fast Xe photoactivation strategy for rapid activation of SERS substrates, shortening the treatment time from tens to hundreds of minutes to only 6 s, for real-time sensing and large-area nanophotonic applications.

Fully vacuum‐evaporated perovskite solar cells (PSCs) offer a solvent‐free, scalable platform for indoor photovoltaics, yet performance is often limited by incomplete phase conversion and high defect densities. Here, we report a sequential vacuum‐evaporation strategy that enables the formation of high‐quality perovskite absorbers specifically optimized for low‐intensity indoor light harvesting. By co‐evaporating PbI ₂ with a controlled fraction of PbCl ₂ , the dense stacking characteristic of thermally deposited PbI ₂ is effectively disrupted, promoting homogeneous organic–inorganic interdiffusion and near‐complete perovskite phase conversion. Additionally, a thin CsI interlayer introduced prior to thermal annealing stabilizes the photoactive phase and suppresses defect formation at both the bulk and interfacial levels. Consequently, the optimized fully evaporated PSCs deliver record indoor power conversion efficiencies of 41.60% at 900 lux and 41.22% at 300 lux under TL84 illumination. Transient photovoltage and photocurrent analyses reveal prolonged carrier lifetimes and accelerated charge extraction, indicative of substantially reduced nonradiative recombination. Importantly, the devices exhibit markedly enhanced operational stability and enable a perovskite mini module (3.9 cm ² ), achieving over 38% efficiency at 900 lux under indoor lighting. Collectively, this work establishes a practical and industrially compatible pathway toward high‐performance, scalable, fully evaporated perovskite photovoltaics, advancing their deployment in next‐generation self‐powered indoor electronic systems.

Despite being one of the most promising candidates for emerging market opportunities, all‐vacuum‐deposited perovskite solar cells (PSCs) still suffer from significant efficiency limitations, primarily due to open‐circuit voltage ( V _OC ) losses caused by interfacial defects at the top surface of the perovskite layer. In this work, we demonstrate PSCs fabricated via a simple, sandwich‐type all‐vacuum thermal evaporation process, incorporating an ultrathin (6 nm) MS‐OC (spiro[fluorene‐9,9′‐phenanthrene‐10′‐one] incorporated with o ‐phenylcarbazole) hole transport layer (HTL) as a growth template for hybrid metal–halide perovskites. To mitigate V _OC losses and better understand the interfacial charge dynamics, we systematically investigate various electron transport materials (ETMs), with a particular focus on C ₆₀ , LiF, and coevaporated C ₆₀ :LiF (1:1). Our results reveal that the C ₆₀ :LiF (1:1) coevaporation strategy not only suppresses fullerene aggregation but also effectively passivates the perovskite surface, thereby reducing nonradiative recombination and enhancing V _OC by 23.37%. As a result, the power conversion efficiency (PCE) of the PSCs improved by 29.34%, reaching a PCE of 13.4% with low nonradiative loss (~135 mV). More importantly, this composite passivation approach significantly enhanced the device's environmental stability, maintaining 90% of its initial efficiency after 600 h of operation.

The advancement of all-inorganic metal halide perovskites for visible light detection has been constrained by challenges in scalable, continuous fabrication that ensure both high-quality film formation and robust device stability. Here, we report one of the few all-inorganic perovskite photodetectors (PDs) fabricated entirely through a fully vacuum-based, continuous deposition process, without any solution processing, using a bilayer-engineered substrate to promote uniform crystallization and optimal interface formation. The CsPbI₂Br PD achieves a dark current density of 9.2 × 10^-10 A cm^-2, a specific detectivity (D*) of 2.0 × 10¹³ Jones, and a fast response time of ∼2 μs, along with a linear dynamic range of 109 dB and a cutoff frequency exceeding 300 kHz, underscoring its utility in high-speed optical communication and real-time audio transmission. Long-term operational stability is also demonstrated, with the device retaining 70% of its initial photocurrent after 30 days under continuous AM 1.5G illumination. Importantly, we integrated the PD into a functional Li-Fi system, successfully validating its data transmission capability. Notably, the proposed fabrication route is fully compatible with existing OLED manufacturing processes, providing a clear pathway for future integration of perovskite-based photodetectors into mature optoelectronic production lines. This work establishes a rare, continuous, and fully vacuum-deposited fabrication strategy for all-inorganic perovskite PDs, advancing their readiness for scalable, high-speed optoelectronic applications.