Arjan J. Houtepen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Arjan J. Houtepen has a total of 451 co-authors. Here are the top co-authors by number of shared publications:
Laurens D. A. Siebbeles
Department of Chemical Engineering Delft University of Technology 2629HZ Delft The Netherlands
24 shared publications- Laurens D. A. Siebbeles
Chemical Engineering Department, Delft University of Technology, Delft, The Netherlands
21 shared publications - Indy du Fossé
Optoelectronic Materials Section, Faculty of Applied Sciences, Delft University of Technology, van der Maasweg 9, 2629 HZ Delft, The Netherlands
16 shared publications Sachin Kinge
Toyota Motor Europe Materials Research & Development 1930 Zaventem Belgium
16 shared publicationsJuleon M. Schins
Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands
13 shared publications- Nicholas Kirkwood
ARC Centre of Excellence in Exciton Science, School of Chemistry, The University of Melbourne, Parkville, Victoria 3010, Australia
12 shared publications
Latest Publications
- Open Access
- 8 November 2026
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
Ambipolar Electrochemical Doping of CsPbBr 3 Nanocrystals
Electronic doping underpins many semiconductor applications but has remained elusive for lead halide perovskite nanocrystals because their high density and low formation energy of defects easily compensate introduced dopants. Here, we use electrochemical doping as a strategy to avoid doping compensation. Electrochemical injection of electrons or holes into the nanocrystal is compensated by surface-adsorbed electrolyte counterions, therefore not compromising crystal structure. We accomplished ambipolar (n- and p-type) doped CsPbBr3 nanocrystals with charge carrier concentrations ranging from intrinsic up to 4.8 × 1017 cm–3 (corresponding to 0.25 charges per nanocrystal). We show that electrochemical doping is reversible and stable at these free carrier concentrations. The extent of doping and stability are enabled by the use of lecithin, a zwitterionic ligand that strongly binds to the surface of the CsPbBr3 nanocrystals while still allowing ion and electron transfer. Lecithin stabilizes the surface atoms by shifting the potentials for Pb2+ reduction and Br– oxidation outside of the bandgap. The inferred surface-chemistry design rules for stable electrochemical doping can also serve as a guideline for developing CsPbBr3 nanocrystals stable under high free-carrier concentrations in optoelectronic devices, such as light-emitting diodes or electronically triggered quantum light sources.
- 8 November 2026
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
Open AccessAmbipolar Electrochemical Doping of CsPbBr 3 Nanocrystals
Electronic doping underpins many semiconductor applications but has remained elusive for lead halide perovskite nanocrystals because their high density and low formation energy of defects easily compensate introduced dopants. Here, we use electrochemical doping as a strategy to avoid doping compensation. Electrochemical injection of electrons or holes into the nanocrystal is compensated by surface-adsorbed electrolyte counterions, therefore not compromising crystal structure. We accomplished ambipolar (n- and p-type) doped CsPbBr3 nanocrystals with charge carrier concentrations ranging from intrinsic up to 4.8 × 1017 cm–3 (corresponding to 0.25 charges per nanocrystal). We show that electrochemical doping is reversible and stable at these free carrier concentrations. The extent of doping and stability are enabled by the use of lecithin, a zwitterionic ligand that strongly binds to the surface of the CsPbBr3 nanocrystals while still allowing ion and electron transfer. Lecithin stabilizes the surface atoms by shifting the potentials for Pb2+ reduction and Br– oxidation outside of the bandgap. The inferred surface-chemistry design rules for stable electrochemical doping can also serve as a guideline for developing CsPbBr3 nanocrystals stable under high free-carrier concentrations in optoelectronic devices, such as light-emitting diodes or electronically triggered quantum light sources.
- Open Access
- 21 August 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (34) , 23822-23836
InF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors
Shortwave infrared (SWIR) photodetectors are crucial for emerging technologies such as autonomous driving, smart agriculture, industrial inspection, and eye-safe LiDAR. Colloidal indium arsenide (InAs) quantum dots (QDs) offer a low-cost, RoHS-compliant alternative to epitaxial III–V semiconductors. But their performance is limited by a high density of surface trap states that induce nonradiative recombination and potentially give rise to a high dark current in photodiodes. Here, we demonstrate that InF3 can effectively passivate these surface traps, significantly improving both optical and electronic properties. In nonpolar solvents, a simple InF3 treatment on oleylamine/chloride-capped In(As,P) and oleate-capped InAs QDs increases the photoluminescence quantum yield to 13% and 4%, respectively─the highest reported for core-only InAs QDs. In polar media, the InF3 treatment remains effective but reduces colloidal stability. To overcome this limitation, a solid-state in situ InF3 treatment of QD films was used. The treatment doubles the carrier lifetime and lowers the dark carrier density, confirmed by ultrafast transient absorption spectroscopy, microwave conductivity, and electrochemically gated transistor measurements. In SWIR photodetectors, this leads to an order-of-magnitude reduction in dark current density and a 3-fold increase in the calculated specific detectivity, assuming it is shot-noise-limited. Temperature-dependent dark current density and thermal admittance spectroscopy measurements reveal that deep trap states dominate the dark current in InAs QDs photodetectors. The InF3 treatment strongly suppresses these traps. These findings establish InF3 passivation as a powerful, promising strategy for mitigating surface-trap-induced dark current and advancing high-performance, RoHS-compliant SWIR photodetectors.
- 21 August 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (34) , 23822-23836
Open AccessInF3 Surface Passivation on InAs Quantum Dots Enhances Photoluminescence and Reduces Trap-Induced Dark Current in Shortwave Infrared Photodetectors
Shortwave infrared (SWIR) photodetectors are crucial for emerging technologies such as autonomous driving, smart agriculture, industrial inspection, and eye-safe LiDAR. Colloidal indium arsenide (InAs) quantum dots (QDs) offer a low-cost, RoHS-compliant alternative to epitaxial III–V semiconductors. But their performance is limited by a high density of surface trap states that induce nonradiative recombination and potentially give rise to a high dark current in photodiodes. Here, we demonstrate that InF3 can effectively passivate these surface traps, significantly improving both optical and electronic properties. In nonpolar solvents, a simple InF3 treatment on oleylamine/chloride-capped In(As,P) and oleate-capped InAs QDs increases the photoluminescence quantum yield to 13% and 4%, respectively─the highest reported for core-only InAs QDs. In polar media, the InF3 treatment remains effective but reduces colloidal stability. To overcome this limitation, a solid-state in situ InF3 treatment of QD films was used. The treatment doubles the carrier lifetime and lowers the dark carrier density, confirmed by ultrafast transient absorption spectroscopy, microwave conductivity, and electrochemically gated transistor measurements. In SWIR photodetectors, this leads to an order-of-magnitude reduction in dark current density and a 3-fold increase in the calculated specific detectivity, assuming it is shot-noise-limited. Temperature-dependent dark current density and thermal admittance spectroscopy measurements reveal that deep trap states dominate the dark current in InAs QDs photodetectors. The InF3 treatment strongly suppresses these traps. These findings establish InF3 passivation as a powerful, promising strategy for mitigating surface-trap-induced dark current and advancing high-performance, RoHS-compliant SWIR photodetectors.
- Open Access
- 14 August 2026
- Published by American Chemical Society (ACS) in ChemRxiv
Ultrafast heating with plasmonic nanoparticles: A scaling analysis of particle, interface and medium effects
Metal nanoparticles strongly absorb light at their localized surface plasmon resonance (LSPR). The absorbed energy generates plasmons under femtosecond excitation, which decay and lead to ultrafast heating of the particles. Thus, these materials can be utilized as nanoheaters to increase the temperature of their local environment on picosecond to nanosecond timescales. The temperature increase of the surrounding medium, as well as their cooling timescales are governed by several factors. These include excitation conditions, the optical and thermal properties of both the metal and the medium, as well as the nature of the interface. Despite extensive studies, particularly on interfacial effects in heat transfer dynamics, a framework linking these experimental parameters to key system descriptors such as the particle temperature decay time and the temperature increase in the medium is lacking. Here, we address this issue by identifying the governing parameters controlling heat transfer rates via a scaling analysis using a continuum heat transfer model. We use transient absorption (TA) spectroscopy to probe ultrafast heating in colloidal gold nanoparticles in a liquid solution. We experimentally obtain temperature profiles of both the particles and the medium and determine the interface thermal conductance (ITC), G. The scaling analysis reveals distinct regimes limited by interface thermal conductance or thermal diffusion in the medium. We demonstrate a shift from an interfacial effects dominated heat transfer regime to a thermal diffusion dominated regime by changing particle size, surface ligands, and the surrounding medium. This way, we show that a simple scaling approach captures the tunability of the particle cooling timescales and temperature increases in the medium based on experimental parameters. This provides a basis for rational parameter selection. The approach can be extended to different materials, particle sizes and shapes, and surrounding media under transient heating conditions.
- 14 August 2026
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessUltrafast heating with plasmonic nanoparticles: A scaling analysis of particle, interface and medium effects
Metal nanoparticles strongly absorb light at their localized surface plasmon resonance (LSPR). The absorbed energy generates plasmons under femtosecond excitation, which decay and lead to ultrafast heating of the particles. Thus, these materials can be utilized as nanoheaters to increase the temperature of their local environment on picosecond to nanosecond timescales. The temperature increase of the surrounding medium, as well as their cooling timescales are governed by several factors. These include excitation conditions, the optical and thermal properties of both the metal and the medium, as well as the nature of the interface. Despite extensive studies, particularly on interfacial effects in heat transfer dynamics, a framework linking these experimental parameters to key system descriptors such as the particle temperature decay time and the temperature increase in the medium is lacking. Here, we address this issue by identifying the governing parameters controlling heat transfer rates via a scaling analysis using a continuum heat transfer model. We use transient absorption (TA) spectroscopy to probe ultrafast heating in colloidal gold nanoparticles in a liquid solution. We experimentally obtain temperature profiles of both the particles and the medium and determine the interface thermal conductance (ITC), G. The scaling analysis reveals distinct regimes limited by interface thermal conductance or thermal diffusion in the medium. We demonstrate a shift from an interfacial effects dominated heat transfer regime to a thermal diffusion dominated regime by changing particle size, surface ligands, and the surrounding medium. This way, we show that a simple scaling approach captures the tunability of the particle cooling timescales and temperature increases in the medium based on experimental parameters. This provides a basis for rational parameter selection. The approach can be extended to different materials, particle sizes and shapes, and surrounding media under transient heating conditions.
- 12 June 2026
- Published by American Chemical Society (ACS) in ACS Nano
Dose-Dependent and Irreversible Photodarkening of InP/ZnSe/ZnS Quantum Dots
Indium phosphide-based quantum dots (QDs) are leading Cd- and Pb-free alternatives for photonic applications spanning 400-920 nm. However, their long-term photostability under prolonged illumination remains poorly understood. In this study, we systematically investigate the optical response of colloidal InP/ZnSe/ZnS core/shell/shell QDs exposed to white light under a dynamic inert atmosphere (glovebox filled with circulating N2 with O2 < 0.1 ppm, H2O < 1.0 ppm). Upon illumination, the QDs exhibit irreversible photodarkening, defined as a reduction in photoluminescence quantum yield with a nearly unchanged absorption spectrum. Photodarkening shows a linear dependence on absorbed photon dose, with photoexcitation deep into the conduction band inducing it more rapidly than resonant photoexcitation. Additionally, prolonged photoexposure leads to an emission redshift and an enhanced delayed-emission component, consistent with the selective photodarkening of individual QDs. Experiments in air and controlled humidity (10% and 90% relative humidity) indicate that photodarkening primarily arises from photooxidation by oxygen, whereas water promotes QD photoetching. This is further corroborated by control experiments in which the QDs are illuminated under dry oxygen (2O) and in a cuvette sealed by fusion under a N2 atmosphere with 2 and 2O. These experiments show that photodarkening does not occur in QDs contained in the fusion-sealed cuvette, while under dry oxygen the photodarkening rates of the QDs are even faster than in dry air. These findings advance understanding of InP-based QD photodegradation and provide a framework for quantifying their stability under light stress.
- 12 June 2026
- Published by American Chemical Society (ACS) in ACS Nano
Dose-Dependent and Irreversible Photodarkening of InP/ZnSe/ZnS Quantum Dots
Indium phosphide-based quantum dots (QDs) are leading Cd- and Pb-free alternatives for photonic applications spanning 400-920 nm. However, their long-term photostability under prolonged illumination remains poorly understood. In this study, we systematically investigate the optical response of colloidal InP/ZnSe/ZnS core/shell/shell QDs exposed to white light under a dynamic inert atmosphere (glovebox filled with circulating N2 with O2 < 0.1 ppm, H2O < 1.0 ppm). Upon illumination, the QDs exhibit irreversible photodarkening, defined as a reduction in photoluminescence quantum yield with a nearly unchanged absorption spectrum. Photodarkening shows a linear dependence on absorbed photon dose, with photoexcitation deep into the conduction band inducing it more rapidly than resonant photoexcitation. Additionally, prolonged photoexposure leads to an emission redshift and an enhanced delayed-emission component, consistent with the selective photodarkening of individual QDs. Experiments in air and controlled humidity (10% and 90% relative humidity) indicate that photodarkening primarily arises from photooxidation by oxygen, whereas water promotes QD photoetching. This is further corroborated by control experiments in which the QDs are illuminated under dry oxygen (2O) and in a cuvette sealed by fusion under a N2 atmosphere with 2 and 2O. These experiments show that photodarkening does not occur in QDs contained in the fusion-sealed cuvette, while under dry oxygen the photodarkening rates of the QDs are even faster than in dry air. These findings advance understanding of InP-based QD photodegradation and provide a framework for quantifying their stability under light stress.
- 24 April 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (17) , 13223-13234
Ultrafast Thermometry of Gold Nanoparticles: Resolving Particle and Medium Temperature Dynamics via Transient Absorption Spectroscopy
Metal nanoparticles and their environment can be locally heated on an ultrafast time scale using femtosecond pulsed illumination of their plasmon resonance, making them of interest for spatiotemporal temperature control. Here, we propose experimental approaches to obtain time-resolved particle and medium temperatures using gold nanoparticles. 23.5 and 39 nm nanoparticles dispersed in water and DMF:water mixture were heated and probed using transient absorption spectroscopy. Simulations indicate that the change in absorbance >10 ps after excitation arises from temperature-induced alterations in the dielectric functions of the particle and the medium. Thus, we measured the temperature-dependent absorbance spectra of nanoparticles, where the signal reflects the combined response of the particle and the medium to heating for a known temperature. We then disentangled the spectra obtaining the particle (Method 1) and the medium contributions (Method 2) to heating independently, followed by a consistency check between the two approaches (Method 3). Accordingly, the transient absorbance spectrum was resolved to extract particle and medium temperatures at each time delay. The resulting profiles are in line with each other, revealing temperature increases of ∼80 K for the particle and 5-15 K for the medium when excited at 400 nm with ∼4 J/m2 fluence. A faster particle temperature decay was observed with decreasing particle size and a faster medium temperature decay with increasing medium thermal diffusivity, in agreement with expectations. Overall, we demonstrate an experimental methodology for simultaneous determination of particle and medium temperatures under a spatiotemporal gradient which is relevant for studies with transient heating and nanoparticles as sensors.
- 24 April 2026
- Published by American Chemical Society (ACS) in ACS Nano
- Vol. 20 (17) , 13223-13234
Ultrafast Thermometry of Gold Nanoparticles: Resolving Particle and Medium Temperature Dynamics via Transient Absorption Spectroscopy
Metal nanoparticles and their environment can be locally heated on an ultrafast time scale using femtosecond pulsed illumination of their plasmon resonance, making them of interest for spatiotemporal temperature control. Here, we propose experimental approaches to obtain time-resolved particle and medium temperatures using gold nanoparticles. 23.5 and 39 nm nanoparticles dispersed in water and DMF:water mixture were heated and probed using transient absorption spectroscopy. Simulations indicate that the change in absorbance >10 ps after excitation arises from temperature-induced alterations in the dielectric functions of the particle and the medium. Thus, we measured the temperature-dependent absorbance spectra of nanoparticles, where the signal reflects the combined response of the particle and the medium to heating for a known temperature. We then disentangled the spectra obtaining the particle (Method 1) and the medium contributions (Method 2) to heating independently, followed by a consistency check between the two approaches (Method 3). Accordingly, the transient absorbance spectrum was resolved to extract particle and medium temperatures at each time delay. The resulting profiles are in line with each other, revealing temperature increases of ∼80 K for the particle and 5-15 K for the medium when excited at 400 nm with ∼4 J/m2 fluence. A faster particle temperature decay was observed with decreasing particle size and a faster medium temperature decay with increasing medium thermal diffusivity, in agreement with expectations. Overall, we demonstrate an experimental methodology for simultaneous determination of particle and medium temperatures under a spatiotemporal gradient which is relevant for studies with transient heating and nanoparticles as sensors.
- 28 January 2026
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 38 (3) , 1407-1414
Electrochemical Stability and Trap-State-Mediated Photoluminescence Modulation of InP-Based Quantum Dots
- 28 January 2026
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 38 (3) , 1407-1414
Electrochemical Stability and Trap-State-Mediated Photoluminescence Modulation of InP-Based Quantum Dots
- 22 January 2026
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 148 (4) , 3938-3943
Electrochemical Control over Electron Density of InAs Quantum Dots
Control over the electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows determination of the absolute energy levels. InAs QDs of 4.2 nm in edge length and capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs in which the charge carrier density is precisely controlled electrochemically.
- 22 January 2026
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 148 (4) , 3938-3943
Electrochemical Control over Electron Density of InAs Quantum Dots
Control over the electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows determination of the absolute energy levels. InAs QDs of 4.2 nm in edge length and capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs in which the charge carrier density is precisely controlled electrochemically.
- Open Access
- 2 January 2026
- Published by American Chemical Society (ACS) in ChemRxiv
Ultrafast Thermometry of Gold Nanoparticles: Resolving Particle and Medium Temperature Dynamics via Transient Absorption Spectroscopy
Metal nanoparticles and their environment can be locally heated on an ultrafast timescale using femtosecond pulsed illumination of their plasmon resonance, making them of interest for spatiotemporal temperature control. Here, we propose experimental approaches to obtain time-resolved particle and medium temperatures using gold nanoparticles. 23.5 and 39 nm nanoparticles dispersed in water and DMF:water mixture were heated and probed using transient absorption spectroscopy. Simulations indicate that the change in absorbance >10 ps after excitation arises from temperature-induced alterations in the dielectric functions of the particle and the medium. Thus, we measured the temperature-dependent absorbance spectra of nanoparticles, where the signal reflects the combined response of the particle and the medium to heating for a known temperature. We then disentangled the spectra obtaining the particle (Method 1) and the medium contributions (Method 2) to heating independently, followed by a consistency check between the two approaches (Method 3). Accordingly, transient absorbance spectrum was resolved to extract particle and medium temperatures at each time delay. The resulting profiles are in line with each other, revealing temperature increases of ~80 K for the particle and 5-15 K for the medium when excited at 400 nm with ~4 J/m^2 fluence. A faster particle temperature decay was observed with decreasing particle size, and a faster medium temperature decay with increasing medium thermal diffusivity, in agreement with expectations. Overall, we demonstrate an experimental methodology for simultaneous determination of particle and medium temperatures under spatiotemporal gradient which is relevant for studies with transient heating and nanoparticles as sensors.
- 2 January 2026
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessUltrafast Thermometry of Gold Nanoparticles: Resolving Particle and Medium Temperature Dynamics via Transient Absorption Spectroscopy
Metal nanoparticles and their environment can be locally heated on an ultrafast timescale using femtosecond pulsed illumination of their plasmon resonance, making them of interest for spatiotemporal temperature control. Here, we propose experimental approaches to obtain time-resolved particle and medium temperatures using gold nanoparticles. 23.5 and 39 nm nanoparticles dispersed in water and DMF:water mixture were heated and probed using transient absorption spectroscopy. Simulations indicate that the change in absorbance >10 ps after excitation arises from temperature-induced alterations in the dielectric functions of the particle and the medium. Thus, we measured the temperature-dependent absorbance spectra of nanoparticles, where the signal reflects the combined response of the particle and the medium to heating for a known temperature. We then disentangled the spectra obtaining the particle (Method 1) and the medium contributions (Method 2) to heating independently, followed by a consistency check between the two approaches (Method 3). Accordingly, transient absorbance spectrum was resolved to extract particle and medium temperatures at each time delay. The resulting profiles are in line with each other, revealing temperature increases of ~80 K for the particle and 5-15 K for the medium when excited at 400 nm with ~4 J/m^2 fluence. A faster particle temperature decay was observed with decreasing particle size, and a faster medium temperature decay with increasing medium thermal diffusivity, in agreement with expectations. Overall, we demonstrate an experimental methodology for simultaneous determination of particle and medium temperatures under spatiotemporal gradient which is relevant for studies with transient heating and nanoparticles as sensors.
- Open Access
- 2 December 2025
- Published by American Chemical Society (ACS) in ChemRxiv
Electrochemical control over electron density of InAs quantum dots
Control over electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of 2 states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows to determine the absolute energy levels. InAs QDs capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs. vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs where the charge carrier density is precisely controlled electrochemically.
- 2 December 2025
- Published by American Chemical Society (ACS) in ChemRxiv
Open AccessElectrochemical control over electron density of InAs quantum dots
Control over electron density and conductivity is a cornerstone of semiconductor technology. Here, we report electrochemical control over electron density and conductivity in films of InAs colloidal quantum dots (QDs) capped with ethanedithiol ligands. The quantum-confined twofold degenerate 1S1/2(e) electron state can be reversibly and completely filled. Increasing the electron population yields four bleach features in the optical-absorption spectrum associated transitions to the 1S1/2(e) state, and state-resolved electronic conductivity which follows the 1S1/2(e) density of 2 states, reaching a maximum of 0.45 S/m at 0.5 electrons per QD. The absence of 1P(e) bleach features and state-resolved conductivity imply a wide separation between the 1S1/2(e) and 1P(e) states resulting in electronic transport between 1S(e) states exclusively. The reversible electrochemistry of InAs QDs films allows to determine the absolute energy levels. InAs QDs capped with ethanedithiol ligands are natively n-doped with the Fermi level at -4.6 eV, the 1S1/2(e) state at -4.28 eV and the 1S3/2(h) state at -5.54 eV vs. vacuum. This work establishes a way to precisely control the charge carrier density and conductivity and gives insights into the charge transport properties and electronic structure of InAs QD films, opening the possibility of making devices with InAs QDs where the charge carrier density is precisely controlled electrochemically.
- Open Access
- 7 July 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 1-9
Hot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots
Indium phosphide is the leading material for commercial applications of colloidal quantum dots. To date, however, the community has failed to achieve successful operation under strong excitation conditions, contrasting sharply with other materials. Here, we report unusual photophysics of state-of-the-art InP-based quantum dots, which makes them unattractive as a laser gain material despite a near-unity quantum yield. A combination of ensemble-based time-resolved spectroscopy over timescales from femtoseconds to microseconds and single-quantum-dot spectroscopy reveals ultrafast trapping of hot charge carriers. This process reduces the achievable population inversion and limits light amplification for lasing applications. However, it does not quench fluorescence. Instead, trapped carriers can recombine radiatively, leading to delayed—but bright—fluorescence. Single-quantum-dot experiments confirm the direct link between hot-carrier trapping and delayed fluorescence. Hot-carrier trapping thus explains why the latest generation of InP-based quantum dots struggle to support optical gain, although the quantum yield is near unity for low-intensity applications. Comparison with other popular quantum-dot materials—CdSe, Pb–halide perovskites, and CuInS2—indicate that the hot-carrier dynamics observed are unique to InP.
- 7 July 2025
- Published by Springer Nature in Nature Communications
- Vol. 16 (1) , 1-9
Open AccessHot-carrier trapping preserves high quantum yields but limits optical gain in InP-based quantum dots
Indium phosphide is the leading material for commercial applications of colloidal quantum dots. To date, however, the community has failed to achieve successful operation under strong excitation conditions, contrasting sharply with other materials. Here, we report unusual photophysics of state-of-the-art InP-based quantum dots, which makes them unattractive as a laser gain material despite a near-unity quantum yield. A combination of ensemble-based time-resolved spectroscopy over timescales from femtoseconds to microseconds and single-quantum-dot spectroscopy reveals ultrafast trapping of hot charge carriers. This process reduces the achievable population inversion and limits light amplification for lasing applications. However, it does not quench fluorescence. Instead, trapped carriers can recombine radiatively, leading to delayed—but bright—fluorescence. Single-quantum-dot experiments confirm the direct link between hot-carrier trapping and delayed fluorescence. Hot-carrier trapping thus explains why the latest generation of InP-based quantum dots struggle to support optical gain, although the quantum yield is near unity for low-intensity applications. Comparison with other popular quantum-dot materials—CdSe, Pb–halide perovskites, and CuInS2—indicate that the hot-carrier dynamics observed are unique to InP.