Jesse James Lutz

Simulations are performed to consider several spectrometric and spectroscopic candidates for elucidating the mechanism of the hydrolysis of uranium hexafluoride (UF6). This study is among the first to benchmark the def-mTZVP basis sets for actinide-containing molecules, and it is shown to be a suitable basis set for surveying geometrical structures and vibrational spectra when used in conjunction with density functional theory. An experiment is proposed coupling mass spectrometric ion selection with vibrational spectroscopy, and supporting infrared and Raman spectral simulations demonstrate that ionization blue-shifts bands and can change their qualitative features. Ultraviolet resonance Raman is shown to have good prospects for discriminating U–O–U bridged intermediates, evidence for which was observed recently [L. E. McNamara et al., J. Phys. Chem. A 130, 775–786 (2026)]. As a more speculative approach, we also consider the prospect of addressing 233U or 235U nuclei by quadrupole resonance (NQR) spectroscopy for assigning early stage intermediate complexes. In doing so, we provide a first order-of-magnitude estimate for the collision-induced NQR signal for the UF6 dimer, which is of interest for the interpretation of a fast decoherence time observed in liquid-phase nuclear magnetic resonance. Having provided critical insights into the formation and stability of UF6 hydrolysis intermediates in previous studies, this computational spectroscopy survey is expected to help guide and expedite future laboratory campaigns.

Irradiation of gallium arsenide (GaAs) produces immobile vacancies and mobile interstitials. Yet, after decades of experimental investigation, the immobile Ga vacancy continues to evade detection, raising the question: where is the Ga vacancy? Static first-principles calculations predict a Ga vacancy should be readily observed. We find that short-time dynamical evolution of primary defects is the key to explaining this conundrum. Using a dynamical multiscale atomistically informed device engineering (AIDE) method, we discover that during the initial displacement damage, the Ga vacancy (3-/2-) defect level pins the Fermi level near the midgap, producing oppositely charged vacancies and interstitials. Driven by Coulomb attraction, fast As interstitials preferentially annihilate Ga vacancies. The Ga vacancy population plummets below detectable limits—and the now unpinned Fermi level recovers—before being experimentally observed. This dynamical model solves the mystery of the missing Ga vacancy and reveals the importance of a multiscale approach to explore the dynamical chemical behavior in experimentally inaccessible short-time regimes.

Using ground state density functional theory (DFT) and implementing an occupation-constrained DFT (occ-DFT) for self-consistent excited state calculations, we decipher the electronic structure of the Mn dopant and other 3d defects in GaN across the band gap. Our analysis, validated with broad agreement with defect levels (ground-state calculations) and photoluminescence data (excited-state calculations), mandates reinterpretation and reassignment of 3d defect data in GaN. The Mn_Ga defect is determined to span stable charge states from (1−) in n-type GaN through (2+) in p-type GaN. The Mn(2+) is predicted to be a d ² ground state spin triplet defect with a singlet excited state, isoelectronic with the defect associated with the 1.19 eV photoluminescence in n-type GaN. The combined analysis of defect levels and excited states invites reassessment of all d ²-capable dopants in GaN. We demonstrate that the 1.19 eV defect, a candidate defect for optically controlled quantum applications, cannot be the Cr(1+) assumed in literature and instead must be the V(0). The combined ground-state/excited-state DFT analysis is shown to be able to chemically fingerprint defects.

Metal hexafluorides hydrolyze at ambient temperature to deposit compounds having fluorine-to-oxygen ratios that depend upon the identity of the metal. Uranium-hexafluoride hydrolysis, for example, deposits uranyl fluoride (UO2F2), whereas molybdenum hexafluoride (MoF6) and tungsten hexafluoride deposit trioxides. Here, we pursue general strategies enabling the prediction of depositing compounds resulting from multi-step gas-phase reactions. To compare among the three metal-hexafluoride hydrolyses, we first investigate the mechanism of MoF6 hydrolysis using hybrid density functional theory (DFT). Intermediates are then validated by performing anharmonic vibrational simulations and comparing with infrared spectra [McNamara et al., Phys. Chem. Chem. Phys. 25, 2990 (2023)]. Conceptual DFT, which is leveraged here to quantitatively evaluate site-specific electrophilicity and nucleophilicity metrics, is found to reliably predict qualitative deposition propensities for each intermediate. In addition to the nucleophilic potential of the oxygen ligands, several other contributing characteristics are discussed, including amphoterism, polyvalency, fluxionality, steric hindrance, dipolar strength, and solubility. To investigate the structure and composition of pre-nucleation clusters, an automated workflow is presented for the simulation of particle growth. The workflow entails a conformer search at the density functional tight-binding level, structural refinement at the hybrid DFT level, and computation of a composite free-energy profile. Such profiles can be used to estimate particle nucleation kinetics. Droplet formation is also considered, which helps to rationalize the different UO2F2 particle morphologies observed under varying levels of humidity. Development of predictive methods for simulating physical and chemical deposition processes is important for the advancement of material manufacturing involving coatings and thin films.