Dong-Ming Sun

Perovskite materials have attracted extensive attention in photodetection owing to their excellent light absorption capability and high carrier generation efficiency. Among them, the lead-free perovskite Cs3Bi2I9 has been widely studied due to its low toxicity and outstanding X-ray sensitivity. However, its relatively low carrier mobility severely restricts the effective transport of photogenerated carriers, thereby limiting key device performance metrics such as responsivity, external quantum efficiency, and detectivity. To address this challenge, a Cs3Bi2I9/carbon nanotubes (CNTs) composite photodetector is developed by introducing CNTs networks as efficient charge transport pathways into the Cs3Bi2I9 photosensitive layer. This hybrid architecture enables a decoupled design of light absorption and carrier transport, where Cs3Bi2I9 serves as the primary light-harvesting medium while CNTs facilitate rapid carrier extraction and transport, effectively suppressing carrier recombination. As a result, the device exhibits excellent performance under 405 nm illumination, achieving a responsivity of 1.44 × 105 A/W and a detectivity of 1.15 × 1016 Jones. In addition, a high X-ray sensitivity of 2.088 × 104 μC/(Gyair·cm2) is achieved. These results demonstrate a new route for advancing lead-free high-performance broadband perovskite optoelectronic devices.

Tellurium (Te) nanowires attracted significant attention due to their unique magneto‐electric effect, thermoelectric properties and strong piezoelectricity. However, their controlled synthesis using traditional methods, including microwave irradiation, thermal evaporation and hydrothermal synthesis, suffers from serious trade‐offs between prolonged processing and limited crystal quality, preventing their widespread applications. Herein, we demonstrate an ultrafast, surfactant‐free strategy that enables scalable synthesis of solution‐processable crystalline Te nanowires within seconds. In this method, lithium‐intercalated MoTe ₂ (denoted as Li _x MoTe ₂ ) _, obtained from the initial synthetic step, undergoes a rapid hydrolysis reaction that completes on a sub‐second timescale at room temperature. Subsequently, the structural expansion induced by in‐situ H ₂ formation breaks Mo─Te bonds, facilitating the uniform and rapid growth of Te nanowires with an average length of ∼824 nm and width of ∼21 nm. These solution‐processed crystalline Te nanowires exhibit a hole mobility of 8.7 cm ² V ⁻¹ s ⁻¹ at room temperature and deliver fast photoresponse across the visible light regime (405–638 nm). They display remarkable weak‐light detection capability, as evidenced by a high specific detectivity of 1×10 ⁸ Jones. This rapid synthetic approach paves the way for further applications of crystalline Te nanowires in electronic devices, energy conversion and optoelectronic devices.

Black phosphorene nanoribbons (PNRs) are unique quasi-1D nanomaterials that have attracted enormous interest due to their properties, such as tunable bandgap, magnetism, and semiconducting ground states at room temperature. However, the scalable synthesis of PNRs has remained a considerable challenge. We report the scalable topochemical synthesis of PNRs by the solid lithiation of black phosphorus (BP) powder and subsequent exfoliation into nanoribbons. The produced PNRs have an average length of 3.48 μm, an aspect ratio up to 137, a minimum thickness of 5 layers for individual nanoribbons, and an average thickness of 14 layers. This method has a high yield of 61%, a powder production scale of 10 g, and a liter-range colloidal dispersion. The PNRs can be easily processed into versatile, flexible devices on a fabric substrate by screen printing. A cellulose/(DMF-dispersed PNR) (Cel/D-PNR) flexible film has excellent flame-retardant properties, with a limiting oxygen index (LOI) reaching 33%. PNR-supported Co nanoparticles (Co_x-PNR) had an outstanding oxygen evolution reaction (OER) performance with an overpotential of only 350 mV at 10 mA/cm². This work allows the scalable production of PNRs in order to explore their potential applications in flexible electronics and energy conversion.

Realising ubiquitous environmental monitoring and smart sensing devices compatible with Internet of Things (IoT) and 6 G networks requires transistors with terahertz (THz) cutoff frequencies (f_T) for efficient signal processing. However, the carrier transit time intrinsically limits conventional devices. Vertical two-dimensional (2D) base transistors offer a way to exceed this limit, yet interface losses typically suppress current gain, degrade high-frequency performance, and hinder THz operation. Here, we report a silicon–graphene–germanium barristor that overcomes these obstacles. Wafer-scale single-crystal graphene was epitaxially grown on germanium and integrated with silicon membranes, forming asymmetric Schottky barriers at the graphene–silicon and graphene–germanium interfaces. Using graphene’s quantum capacitance, the asymmetric barriers enable distinct hot-carrier emission at both terminals and greatly increase the current gain, while graphene’s atomic thickness minimises the perpendicular transit time. As a result, the device achieves a current gain up to 1.8 × 10⁷ and an intrinsic f_T up to 132 GHz, with modelling and simulation indicating scalability into the THz regime. These findings establish a promising high-frequency transistor paradigm for IoT sensors and systems.

Accurate recognition of low-contrast targets in complex visual environments is essential for advanced intelligent machine vision systems. Conventional photodetectors often suffer from a weak photoresponse and a linear dependence of photocurrent on light intensity, which restricts their ability to capture low-contrast features and makes them susceptible to noise. Inspired by the adaptive mechanisms of the human visual system, we present a molybdenum disulfide (MoS ₂ ) phototransistor with tunable sensitivity, in which the gate stack incorporates a heterostructure diode—composed of O-plasma-treated MoS ₂ and pristine MoS ₂ —that serves as the photosensitive layer. This configuration enables light-intensity-dependent modulation of the diode’s conductance, which dynamically in turn alters the voltage distribution across the gate dielectric and transistor channel, leading to a significant photoresponse. By modulating the gate voltage, the light response range can be finely tuned, maintaining high sensitivity to low-contrast targets while suppressing noise interference. Compared to conventional photodetectors, the proposed device achieves a 1000-fold improvement in sensitivity for low-contrast signal detection and exhibits significantly enhanced noise immunity. The intelligent machine vision system built on this device demonstrates exceptional performance in detecting low-contrast targets, underscoring its promise for next-generation machine vision applications.

The drive for complementary transistors with ultra-steep subthreshold swing (SS) and minimal power consumption has intensified interest in integrating low-dimensional semiconductors with wide-bandgap materials, as silicon scaling approaches its physical limits in the post-Moore era. A central bottleneck, however, lies in dielectric/semiconductor interface engineering: existing strategies based on van der Waals transfer or nonnative dielectric deposition compromise interface quality, wafer-scale uniformity, and process compatibility, preventing practical large-scale integration. Here, we demonstrate a previously unexplored in situ oxidation strategy that directly forms a high-κ gallium oxide (GaO_x) dielectric on heavily doped n-type gallium nitride (GaN) substrates, enabling high-performance, energy-efficient complementary inverters based on n-type molybdenum disulfide (MoS₂) and p-type carbon nanotube transistors. Leveraging the excellent dielectric properties of the GaN/GaO_x heterostructure, MoS₂ field-effect transistors achieve an interface trap density of 1.18 × 10¹¹ cm⁻² eV⁻¹, an SS at the thermionic limit of 60 mV dec⁻¹, an on/off ratio above 10⁸ at 0.87 V, and a voltage gain of 134.5 at 2 V for inverters. These results establish GaN/GaO_x as a native, scalable, and complementary metal-oxide-semiconductor-compatible integration platform, offering a transformative route toward wafer-scale, low-power electronics in the post-Moore era.

Artificial neuromorphic vision systems emulate the biological visual pathway by integrating sensing, storage, and information processing within a unified architecture. Featuring high speed, low power consumption, and superior temporal resolution, they demonstrate significant potential in fields such as autonomous driving, facial recognition, and intelligent perception. As the core building block, the optoelectronic synapse plays a decisive role in determining system performance, which is closely related to its material composition, structural design, and functional characteristics. This review systematically summarizes recent progress in optoelectronic synaptic materials, device architectures, and performance evaluation methodologies. Furthermore, it explores the working mechanisms and network architectures of optoelectronic synapse‐based neuromorphic vision systems, highlighting their capability in image perception, information storage, and target recognition. Current challenges, including environmental stability, large‐scale array fabrication, chip‐level integration, and adaptability of visual functions to real‐world scenarios, are discussed in depth. Finally, the review provides an outlook on future development trends toward stable, scalable, and highly integrated optoelectronic neural vision systems, underscoring their key importance in next‐generation intelligent sensing and information‐processing technologies.

Photodetectors, as the core devices for optical signal conversion, need to balance high efficiency, fast response, and low-cost fabrication. Perovskite, with its advantages of high carrier mobility and tunable band gaps, have become an ideal alternative to silicon-based materials. This paper systematically reviews the progress in the patterned fabrication techniques and device construction of perovskite photodetectors across various dimensional material systems. First, it introduces five mainstream patterned fabrication methods for perovskites: template-confined growth, inkjet printing, vapor deposition, seed-induced growth, and conventional photolithography. Then, the latest research on image sensors based on perovskite materials in different dimensions is discussed. Following this, the paper highlights two promising application directions with great development potential: flexible wearable devices and electrochemical vision systems. Finally, the challenges and potential solutions for the future development of patterned perovskite photodetectors are presented to guide the development of high-performance perovskite optoelectronic devices.

In this paper, a flexible single-point sensor integrated into a fiber-optic path, capable of simultaneously detecting temperature and pressure with inherent crosstalk immunity, is presented through the development of a hybrid tellurite glass/polydimethylsiloxane composite probe. Temperature measurement is achieved through the fluorescence intensity ratio technique utilizing the thermally coupled levels (²H_11/2 and ⁴S3/2) of Er³⁺ ions. Meanwhile, pressure sensing is realized by exploiting the temperature-insensitive characteristic of ²H_11/2 emission within a limited temperature range, combined with the polydimethylsiloxane-induced optical transmission loss under elastic deformation. To the best of our knowledge, this represents the first implementation of simultaneous temperature and pressure sensing based on upconversion fluorescence in Er³⁺-doped tellurite glass. Compared with conventional dual-parameter fiber-optic sensors, our design eliminates the requirement for complex dual-sensing configurations or sophisticated signal decoupling algorithms, accomplishing dual-parameter detection using a single sensing element. The developed sensor exhibits outstanding features including compact structure, low-cost fabrication, simple signal interrogation, and excellent flexibility for wearable applications, showing great potential in healthcare monitoring, human-machine interfaces, and motion recognition systems.