Dengkui Wang

Physical unclonable functions (PUFs) rely on randomness, stability, and uniqueness of physical systems, thereby protecting information from unauthorized access. This study presents an advanced optical PUF tag that uses Raman signals to detect multiple peaks, creating a multilayered encryption strategy that can enhance security significantly. By employing microwires (MWs) from various materials, this approach enables dual encryption through distinctive Raman peaks. Each PUF tag generates two unique keys (Ga₂O₃ and ZnO) based on Raman mapping, and these keys are dynamically assigned as either key A (primary) or key B (secondary) to further bolster security level. Analysis of the pixel-level data indicates high consistency between keys from the same tag and notable differences between different tags. This dual-encryption strategy combined with dynamic key assignment provides a robust approach for enhancing information security and anticounterfeiting performance.

Photodetectors, based on GaAs nanowires (NWs), hold significant promise in the fields of high integration micro‐ and nano‐optoelectronics applications because of their outstanding electronic and optical properties. To date, significant efforts have been directed toward enhancing the performance of photodetectors, aiming for high detectivity and fast response. However, considerable challenges remain in achieving both efficient separation of carriers and enhancing gain capabilities simultaneously. In this work, we report a high‐performance GaAs core–shell nanowire photodetector featuring a hybrid‐crystallization (HC) Sb ₂ S ₃ shell that incorporates homogeneous crystalline quantum dots (QDs) within an amorphous matrix. The Sb ₂ S ₃ shell reconfigures the valence valley and introduces trap states, thereby effectively separating photo‐generated carriers spatially while serving as a conduit for minority carriers. The unique hybrid‐crystallization shell emerges as a crucial factor in enhancing performance. The core–shell nanowire photodetector presents a high responsivity of 1061.3 A W ⁻¹ , a detectivity of 1.2 × 10 ¹² cm Hz ^0.5 W ⁻¹ , and an external quantum efficiency (EQE) of 1.63 × 10 ⁵ % at 5 V under 808 nm irradiation, surpassing those of conventional GaAs nanowire photodetectors. Moreover, this device demonstrates rapid response characteristics. These findings underscore a unique strategy for designing high‐performance nanowire photodetectors through the incorporation of engineered amorphous quantum dots.

CoP/fs-Mo electrodes with superhydrophilic/aerophobic properties show excellent HER activity over a wide pH range.

Advanced infrared optoelectronic devices fabricated using antimony-based type-II superlattices have progressed significantly in recent years. However, fundamental challenges remain in the understanding of the exciton recombination mechanism associated with these superlattice structures and in the exploration of efficient methods to suppress the effects of native defects and thus prolong carrier lifetimes. We have investigated the optical properties of high-quality InAs/In0.5Ga0.5As0.5Sb0.5 type-II superlattices in the long-wave infrared band (6–9 μm), where a significant carrier localization phenomenon was observed via temperature- and excitation-power-dependent photoluminescence measurements. The carrier distribution with respect to temperature, including the anomalous temperature dependences of the peak energy, the full width at half maximum, and the integrated intensities, were identified and explained using the localized-state ensemble luminescence model. We also observed a large radiative to nonradiative recombination ratio (∼42.6) by analyzing localized-state ensemble equations in type-II superlattices. Finally, the InAs/In0.5Ga0.5As0.5Sb0.5 superlattice showed long minority carrier lifetimes of up to 847 ns. These results show that the prepared InAs/In0.5Ga0.5As0.5Sb0.5 superlattices have excellent optical properties compared with existing type-II superlattices and have great potential for infrared optoelectronic applications.

Based on first-principles density functional theory, crystal structure models of antimony sulfide (Sb2S3) in three distinct crystalline states were constructed and the physical properties of these states were investigated. Special emphasis was placed on analyzing the physical properties of the hybrid amorphous-crystalline disordered structure of Sb2S3 and studying the changes in potential energy within this state. The computational results indicate that as Sb2S3 transitions from an amorphous state to a crystalline state, the material’s bandgap narrows to 0.71 eV and the potential energy varies smoothly. This study highlights the potential applications of Sb2S3 in electronics and optoelectronics, while also laying an important theoretical foundation for a deeper understanding of its fundamental physical properties and its applications in fields such as photocatalysis.