Akmaral Seitkhan

The performance of perovskite solar cells with inverted polarity (p-i-n) is still limited by recombination at their electron extraction interface, which also lowers the power conversion efficiency (PCE) of p-i-n perovskite-silicon tandem solar cells. A MgF _x interlayer with thickness of ~1 nanometer at the perovskite/C ₆₀ interface favorably adjusts the surface energy of the perovskite layer through thermal evaporation, which facilitates efficient electron extraction and displaces C ₆₀ from the perovskite surface to mitigate nonradiative recombination. These effects enable a champion open-circuit voltage of 1.92 volts, an improved fill factor of 80.7%, and an independently certified stabilized PCE of 29.3% for a monolithic perovskite-silicon tandem solar cell ~1 square centimeter in area. The tandem retained ~95% of its initial performance after damp-heat testing (85°C at 85% relative humidity) for >1000 hours.

If perovskite solar cells (PSCs) with high power conversion efficiencies (PCEs) are to be commercialized, they must achieve long-term stability, which is usually assessed with accelerated degradation tests. One of the persistent obstacles for PSCs has been successfully passing the damp-heat test (85°C and 85% relative humidity), which is the standard for verifying the stability of commercial photovoltaic (PV) modules. We fabricated damp heat–stable PSCs by tailoring the dimensional fragments of two-dimensional perovskite layers formed at room temperature with oleylammonium iodide molecules; these layers passivate the perovskite surface at the electron-selective contact. The resulting inverted PSCs deliver a 24.3% PCE and retain >95% of their initial value after >1000 hours at damp-heat test conditions, thereby meeting one of the critical industrial stability standards for PV modules.

Solid-state transistor sensors that can detect biomolecules in real time are highly attractive for emerging bioanalytical applications. However, combining cost-effective manufacturing with high sensitivity, specificity and fast sensing response, remains challenging. Here we develop low-temperature solution-processed In ₂ O ₃ /ZnO heterojunction transistors featuring a geometrically engineered tri-channel architecture for rapid real-time detection of different biomolecules. The sensor combines a high electron mobility channel, attributed to the quasi-two-dimensional electron gas (q2DEG) at the buried In ₂ O ₃ /ZnO heterointerface, in close proximity to a sensing surface featuring tethered analyte receptors. The unusual tri-channel design enables strong coupling between the buried q2DEG and the minute electronic perturbations occurring during receptor-analyte interactions allowing for robust, real-time detection of biomolecules down to attomolar (aM) concentrations. By functionalizing the tri-channel surface with SARS-CoV-2 (Severe Acute Respiratory Syndrome Coronavirus 2) antibody receptors, we demonstrate real-time detection of the SARS-CoV-2 spike S1 protein down to attomolar concentrations in under two minutes.

Solution‐processed metal oxide thin‐film transistors (TFTs) represent a promising technology for applications in existing but also emerging large‐area electronics. However, high process temperatures and lengthy annealing times represent two remaining technical challenges. Different approaches aiming to address these challenges have been proposed but progress remains modest. Here, the development of high electron mobility metal oxide TFTs based on photonically converted Al₂O₃/ZrO₂ and In₂O₃/ZnO bilayers acting as the high‐k dielectric and electron‐transporting channel, respectively is described. Sequential solution‐phase deposition and photonic processing lead to low substrate temperature (10⁶), and low subthreshold swing (108 mV dec⁻¹), that can be manufactured even onto thermally sensitive polymer substrates. The work is a significant step toward all‐photonic processed metal oxide electronics.

Molecular doping is often used in organic semiconductors to tune their (opto)electronic properties. Despite its versatility, however, its application in organic photovoltaics (OPVs) remains limited and restricted to p‐type dopants. In an effort to control the charge transport within the bulk‐heterojunction (BHJ) of OPVs, the n‐type dopant benzyl viologen (BV) is incorporated in a BHJ composed of the donor polymer PM6 and the small‐molecule acceptor IT‐4F. The power conversion efficiency (PCE) of the cells is found to increase from 13.2% to 14.4% upon addition of 0.004 wt% BV. Analysis of the photoactive materials and devices reveals that BV acts simultaneously as n‐type dopant and microstructure modifier for the BHJ. Under optimal BV concentrations, these synergistic effects result in balanced hole and electron mobilities, higher absorption coefficients and increased charge‐carrier density within the BHJ, while significantly extending the cells' shelf‐lifetime. The n‐type doping strategy is applied to five additional BHJ systems, for which similarly remarkable performance improvements are obtained. OPVs of particular interest are based on the ternary PM6:Y6:PC₇₁BM:BV(0.004 wt%) blend for which a maximum PCE of 17.1%, is obtained. The effectiveness of the n‐doping strategy highlights electron transport in NFA‐based OPVs as being a key issue.

Ferroelectric tunnel junctions (FTJs) are ideal resistance‐switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current‐voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography‐based device fabrication method that would allow for their mass production. Co‐planar FTJs that are fabricated using wafer‐scale adhesion lithography technique are demonstrated, and a bi‐stable rectifying behavior with colossal TER approaching 10⁶% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)], and employ asymmetric co‐planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography‐based nano‐patterning technique and could pave the way to new and exciting memory device concepts.

The power conversion efficiency (PCE) of tandem organic photovoltaics (OPVs) is currently limited by the lack of suitable wide-bandgap materials for the front-cell. Here, two new acceptor molecules, namely IDTA and IDTTA, with optical bandgaps (E^opt _g) of 1.90 and 1.75 eV, respectively, are synthesized and studied for application in OPVs. When PBDB-T is used as the donor polymer, single-junction cells with PCE of 7.4%, for IDTA, and 10.8%, for IDTTA, are demonstrated. The latter value is the highest PCE reported to date for wide-bandgap (E^opt _g ≥ 1.7 eV) bulk-heterojunction OPV cells. The higher carrier mobility in IDTTA-based cells leads to improved charge extraction and higher fill-factor than IDTA-based devices. Moreover, IDTTA-based OPVs show significantly improved shelf-lifetime and thermal stability, both critical for any practical applications. With the aid of optical-electrical device modelling, we combined PBDB-T:IDTTA, as the front-cell, with PTB7-Th:IEICO-4F, as the back-cell, to realize tandem OPVs with open circuit voltage of 1.66 V, short circuit current of 13.6 mA cm⁻² and a PCE of 15%; in excellent agreement with our theoretical predictions. The work highlights IDTTA as a promising wide-bandgap acceptor for high-performance tandem OPVs.

A bilayer of Nb-TiO₂ and bathocuproine forms a highly ohmic contact between a wide variety of semiconducting materials and metal electrodes. This enables performance and stability improvements in a range of electronic devices.