Shuang Gao

Inspired by the pain-perceptual system of human body, the multimode pain-perceptual system (MMPPS) can provide effective protection for electronic skin. Especially after injury, extra care on the periphery of damage will be activated by central sensitization mechanism, during which, touching the wound genially can induce pain. More details can be found in article number 2004208 by Yiwei Liu, Run-Wei Li and co-workers.

All 16 Boolean logic functions in a single Ta/CoFeB/MgO device with perpendicular magnetic anisotropy were experimentally demonstrated based on the spin–orbit torque (SOT) effect. Furthermore, by combining with the voltage-controlled magnetic anisotropy (VCMA) effect, a novel SOT-MTJ (magnetic tunnel junction) prototype device with the assistance of the VCMA effect was further designed to perform magnetic field-independent logic operations. The numerical simulations were carried out, demonstrating the feasibility to realize all 16 Boolean logic functions in a single three-terminal device by applying the bias voltage and current injection as input variables. This approach provides a potential way toward the application of energy efficient spin-based logic, which is beyond the current von Neumann computing architecture.

An artificial photonic nociceptor that can accurately emulate the activation of a human visual nociceptive pathway is highly desired for the development of advanced intelligent optoelectronic information processing systems. However, the realization of such an artificial device needs sophisticated materials design and is pending to date. Herein, we demonstrate a visible light-triggered artificial nociceptor, with a simple ITO/CeO_2−x/Pt sandwich structure, that can well reproduce the pain-perceptual characteristics of the human visual system. The abundant oxygen vacancies in the CeO_2−x layer account for visible light activation, and the notable built-in electric field due to work function difference of the two electrodes enables the device to work even in a self-powered mode. Key nociceptive characteristics, including threshold, no adaptation, relaxation, and sensitization, are realized in the device and are attributed to the oxygen vacancy-associated electron trapping and detrapping processes within the CeO_2−x layer. More importantly, the threshold light intensity to activate the device can be readily manipulated using a sub-1 V external voltage, resembling the ambient luminance-dependent tunability of threshold of the human visual system. This work opens up a new avenue towards the development of next-generation intelligent and low-power perceptual systems, such as visual prostheses, artificial eyes, and humanoid robots.

High‐performance stretchable and twistable nonvolatile memory devices with logic‐in‐memory functionality are highly desired for the development of future wearable electronics such as smart clothing. However, it is challenging to fabricate these memory devices using rigid functional materials based on conventional film deposition and patterning techniques. Herein, the first intrinsically stretchable and twistable resistive switching memory is reported using spin‐coated poly(dimethyl siloxane) elastomer as the storage medium and printed liquid metal as the electrodes. The memory device is found to exhibit a reliable resistive switching behavior under up to 30% stretching strain and 90° torsional deformation, possessing a large memory window (≈10²) and an excellent retention (>10⁴ s). Under 30% strain, stretching–release endurance of >500 cycles as well as excellent data integrity during the dynamic stretching–release process is demonstrated. Beyond data storage, logic‐in‐memory computation prototype represented by a one‐bit full adder is successfully implemented within four operation steps based on three stretched memory cells. This work will be highly valuable in materials and structure design towards the development of high‐performance and multifunctional wearable electronic modules and systems.

Magnetism modulation and conductance quantization are realized simultaneously in a single Gd₂O₃ memristor, which offers a powerful platform for the construction of multifunctional electronic and spintronic devices in the future.

Covalent modification of BP nanosheets with triphenylamine molecules results in better air stability and electrochemical activity, thus enabling its potential use for nonvolatile resistive switching memory.

Quantum‐level manipulation of atomic configuration offers a excellent platform for the construction of exotic nanostructures that exhibit unusual solid‐state physics and electronic properties. One particular example is the memristor, in which the elaborate evolution of atomic point contact via local ionic processes and consequent stepwise device conductance quantization enable bottom‐up design of in‐memory computing with greatly increased data storage density and more efficient multi‐value logic algorithm. In‐depth understanding on the physics of atomic reconfiguration is achieved through comprehensive consideration of the thermodynamics and kinetics of nanoionics in memristors, based on which a general protocol of constructing atomic point contact structure with desired quantized conductance is established. Through energy‐driven single‐atom level oxygen manipulation in the reset process of a Pt/HfO_x/ITO structure, up to 32 consecutive quantized conductance states with an interval of half conductance quantum that can be sustained for over 7000 s and tuned 500 times are demonstrated for the first time, not only allowing the physical implementation of ternary logic‐in‐memory functions, but also providing a universal methodology for building next‐generation quantum electronic devices.

The explosive increase in digital communications in the Big Data and internet of Things era spurs the development of universal memory that can run at high speed with high-density and nonvolatile storage capabilities, as well as demonstrating superior mechanical flexibility for wearable applications. Among various candidates for the next-generation information storage technology, resistive switching memories distinguish themselves with low power consumption, excellent downscaling potential, easy 3D stacking, and high CMOS compatibility, fulfilling key requirements for high-performance data storage. Employing organic and hybrid switching media in addition allows light weight and flexible integration of molecules with tunable device performance via molecular design-cum-synthesis strategy. In this review, we present a timely and comprehensive review of the recent advances in organic and hybrid resistive switching materials and devices, with particular attention on their design principles for electronic property tuning and flexible device performance. The current challenges posed with development of organic and hybrid resistive switching materials and flexible memory devices, together with their future perspectives, are also discussed.

One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO₂/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 10⁴ at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 10⁴ at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO₂/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.