Su-Di Chen
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Su-Di Chen has a total of 157 co-authors. Here are the top co-authors by number of shared publications:
- Feng Wang
Department of Physics, University of California, Berkeley, USA
8 shared publications - Kenji Watanabe
National Institute for Materials Science
8 shared publications - Takashi Taniguchi
National Institute for Materials Science
8 shared publications - Zhi-Xun Shen
Stanford University
7 shared publications - Donghui Lu
Stanford Synchrotron Radiation Lightsource
6 shared publications - Makoto Hashimoto
SLAC National Accelerator Laboratory
5 shared publications
Latest Publications
- 17 June 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 137 (7) , 076002
Contactless cavity sensing of superfluid stiffness in atomically thin 4Hb-TaS 2
The exceptional tunability of two-dimensional van der Waals materials offers unique opportunities for exploring novel superconducting phases. However, in such systems, the measurement of superfluid phase stiffness, a fundamental property of a superconductor, is challenging because of the mesoscopic sample size. Here, we introduce a contact-free technique for probing the electrodynamic response, and thereby the phase stiffness, of atomically thin superconductors using on-chip superconducting microwave resonators. We demonstrate this technique on 4Hb-TaS_{2}, a van der Waals superconductor whose gap structure under broken mirror symmetry is under debate. In our cleanest few-layer device, we observe a superconducting critical temperature comparable to that of the bulk. The temperature evolution of the phase stiffness features nodeless behavior in the presence of broken mirror symmetry, inconsistent with the scenario of nodal surface superconductivity. With minimal fabrication requirements, our technique enables microwave measurements across wide ranges of two-dimensional superconductors.
- 17 June 2026
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 137 (7) , 076002
Contactless cavity sensing of superfluid stiffness in atomically thin 4Hb-TaS 2
The exceptional tunability of two-dimensional van der Waals materials offers unique opportunities for exploring novel superconducting phases. However, in such systems, the measurement of superfluid phase stiffness, a fundamental property of a superconductor, is challenging because of the mesoscopic sample size. Here, we introduce a contact-free technique for probing the electrodynamic response, and thereby the phase stiffness, of atomically thin superconductors using on-chip superconducting microwave resonators. We demonstrate this technique on 4Hb-TaS_{2}, a van der Waals superconductor whose gap structure under broken mirror symmetry is under debate. In our cleanest few-layer device, we observe a superconducting critical temperature comparable to that of the bulk. The temperature evolution of the phase stiffness features nodeless behavior in the presence of broken mirror symmetry, inconsistent with the scenario of nodal surface superconductivity. With minimal fabrication requirements, our technique enables microwave measurements across wide ranges of two-dimensional superconductors.
- 16 October 2025
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 390 (6770) , 299-303
Electrically controlled interlayer trion fluid in electron-hole bilayers
The combination of repulsive and attractive Coulomb interactions in a quantum electron-hole (e-h) fluid can produce correlated phases of multiparticle charge complexes, such as excitons, trions, and biexcitons. We report an experimental realization of an electrically controlled interlayer trion fluid in van der Waals heterostructures. In strongly coupled e-h bilayers, electrons and holes spontaneously form three-particle trion bound states. The interlayer trions can assume 1e-2h and 2e-1h configurations. We show that the two holes in 1e-2h trions form a spin-singlet with a spin gap of approximately one milli–electron volt. By electrostatic gating, the equilibrium state can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, or a trion-charge mixture. Our work demonstrates a platform to study correlated phases of tunable Bose-Fermi mixtures.
- 16 October 2025
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 390 (6770) , 299-303
Electrically controlled interlayer trion fluid in electron-hole bilayers
The combination of repulsive and attractive Coulomb interactions in a quantum electron-hole (e-h) fluid can produce correlated phases of multiparticle charge complexes, such as excitons, trions, and biexcitons. We report an experimental realization of an electrically controlled interlayer trion fluid in van der Waals heterostructures. In strongly coupled e-h bilayers, electrons and holes spontaneously form three-particle trion bound states. The interlayer trions can assume 1e-2h and 2e-1h configurations. We show that the two holes in 1e-2h trions form a spin-singlet with a spin gap of approximately one milli–electron volt. By electrostatic gating, the equilibrium state can be continuously tuned into an exciton fluid, a trion fluid, an exciton-trion mixture, or a trion-charge mixture. Our work demonstrates a platform to study correlated phases of tunable Bose-Fermi mixtures.
- 25 August 2025
- Published by Springer Nature in Nature Materials
- Vol. 25 (1) , 35-41
Competition between excitonic insulators and quantum Hall states in correlated electron–hole bilayers
Excitonic insulators represent a unique quantum phase of matter that enables the study of exotic quantum bosonic states. Strongly coupled electron–hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. On the basis of electron–hole bilayers made of MoSe2/hexagonal boron nitride/WSe2 heterostructures, here we study the behaviour of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron–hole interactions and Landau-level quantization, and enable further exploration of quantum phenomena in composite bosonic insulators.
- 25 August 2025
- Published by Springer Nature in Nature Materials
- Vol. 25 (1) , 35-41
Competition between excitonic insulators and quantum Hall states in correlated electron–hole bilayers
Excitonic insulators represent a unique quantum phase of matter that enables the study of exotic quantum bosonic states. Strongly coupled electron–hole bilayers, which host stable dipolar exciton fluids with an exciton density that can be adjusted electrostatically, offer an ideal platform to investigate correlated excitonic insulators. On the basis of electron–hole bilayers made of MoSe2/hexagonal boron nitride/WSe2 heterostructures, here we study the behaviour of excitonic insulators in a perpendicular magnetic field. We report the observation of excitonic quantum oscillations in both Coulomb drag signals and electrical resistance at low to medium magnetic fields. Under a strong magnetic field, we identify multiple quantum phase transitions between the excitonic insulator phase and the bilayer quantum Hall insulator phase. These findings underscore the interplay between the electron–hole interactions and Landau-level quantization, and enable further exploration of quantum phenomena in composite bosonic insulators.
- 15 May 2025
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 388 (6748) , 736-740
Imaging quantum melting in a disordered 2D Wigner solid
Two-dimensional strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at low densities and form a Fermi liquid at high densities. At intermediate densities, the two-dimensional solid evolves into a strongly correlated liquid phase around a critical density. We observed this quantum melting of a disordered Wigner solid in bilayer molybdenum diselenide (MoSe 2 ) using a noninvasive scanning tunneling microscopy imaging technique. At low densities, the Wigner solid forms nanocrystalline domains pinned by local disorder. It exhibits a quantum densification behavior with increased densities in the solid phase. Above a threshold density, the Wigner solid melts locally and enters a mixed phase in which solid and liquid regions coexist. The liquid regions expand and form a percolation network at even higher densities.
- 15 May 2025
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 388 (6748) , 736-740
Imaging quantum melting in a disordered 2D Wigner solid
Two-dimensional strongly interacting electrons crystalize into a solid phase known as the Wigner crystal at low densities and form a Fermi liquid at high densities. At intermediate densities, the two-dimensional solid evolves into a strongly correlated liquid phase around a critical density. We observed this quantum melting of a disordered Wigner solid in bilayer molybdenum diselenide (MoSe 2 ) using a noninvasive scanning tunneling microscopy imaging technique. At low densities, the Wigner solid forms nanocrystalline domains pinned by local disorder. It exhibits a quantum densification behavior with increased densities in the solid phase. Above a threshold density, the Wigner solid melts locally and enters a mixed phase in which solid and liquid regions coexist. The liquid regions expand and form a percolation network at even higher densities.
- 5 May 2025
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (19) , 7998-8002
Direct Measurement of Terahertz Conductivity in a Gated Monolayer Semiconductor
Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe a clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.
- 5 May 2025
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 25 (19) , 7998-8002
Direct Measurement of Terahertz Conductivity in a Gated Monolayer Semiconductor
Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe a clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.
- 11 November 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (20)
Performance of superconducting resonators suspended on SiN membranes
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes are used in many fields including radiation detection using superconducting circuits, there has been less investigation into maximum membrane aspect ratios and achievable suspended device quality, metrics important to establish the applicable scope of the technique. Here, we investigate these metrics by fabricating superconducting coplanar waveguide resonators entirely atop thin (∼110 nm) SiN membranes, where the membrane's shortest length to thickness yields an aspect ratio of approximately 7.4×103. We compare these membrane resonators to on-substrate resonators on the same chip, finding similar internal quality factors ∼105 at single photon levels. Furthermore, we confirm that these membranes do not adversely affect resonator thermalization and conduct further materials characterization. By achieving high quality superconducting circuit devices fully suspended on thin SiN membranes, our results help expand the technique's scope to potential uses including incorporating higher aspect ratio membranes for device suspension and creating larger footprint, high impedance, and high quality devices.
- 11 November 2024
- Published by AIP Publishing in Applied Physics Letters
- Vol. 125 (20)
Performance of superconducting resonators suspended on SiN membranes
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes are used in many fields including radiation detection using superconducting circuits, there has been less investigation into maximum membrane aspect ratios and achievable suspended device quality, metrics important to establish the applicable scope of the technique. Here, we investigate these metrics by fabricating superconducting coplanar waveguide resonators entirely atop thin (∼110 nm) SiN membranes, where the membrane's shortest length to thickness yields an aspect ratio of approximately 7.4×103. We compare these membrane resonators to on-substrate resonators on the same chip, finding similar internal quality factors ∼105 at single photon levels. Furthermore, we confirm that these membranes do not adversely affect resonator thermalization and conduct further materials characterization. By achieving high quality superconducting circuit devices fully suspended on thin SiN membranes, our results help expand the technique's scope to potential uses including incorporating higher aspect ratio membranes for device suspension and creating larger footprint, high impedance, and high quality devices.
- 16 August 2024
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 385 (6710) , 796-800
Anomalous normal-state gap in an electron-doped cuprate
In the underdoped n-type cuprate Nd 2- x Ce x CuO 4 , long-range antiferromagnetic order reconstructs the Fermi surface, resulting in a putative antiferromagnetic metal with small Fermi pockets. Using angle-resolved photoemission spectroscopy, we observe an anomalous energy gap, an order of magnitude smaller than the antiferromagnetic gap, in a wide portion of the underdoped regime and smoothly connecting to the superconducting gap at optimal doping. After considering all the known ordering tendencies in tandem with the phase diagram, we hypothesize that the normal-state gap in the underdoped n-type cuprates originates from Cooper pairing. The high temperature scale of the normal-state gap raises the prospect of engineering higher transition temperatures in the n-type cuprates comparable to those of the p-type cuprates.
- 16 August 2024
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 385 (6710) , 796-800
Anomalous normal-state gap in an electron-doped cuprate
In the underdoped n-type cuprate Nd 2- x Ce x CuO 4 , long-range antiferromagnetic order reconstructs the Fermi surface, resulting in a putative antiferromagnetic metal with small Fermi pockets. Using angle-resolved photoemission spectroscopy, we observe an anomalous energy gap, an order of magnitude smaller than the antiferromagnetic gap, in a wide portion of the underdoped regime and smoothly connecting to the superconducting gap at optimal doping. After considering all the known ordering tendencies in tandem with the phase diagram, we hypothesize that the normal-state gap in the underdoped n-type cuprates originates from Cooper pairing. The high temperature scale of the normal-state gap raises the prospect of engineering higher transition temperatures in the n-type cuprates comparable to those of the p-type cuprates.
- 26 June 2024
- Published by Springer Nature in Nature
- Vol. 631 (8022) , 771-776
Terahertz phonon engineering with van der Waals heterostructures
Phonon engineering at gigahertz frequencies forms the foundation of microwave acoustic filters1, acousto-optic modulators2 and quantum transducers3,4. Terahertz phonon engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite their potential, methods for engineering terahertz phonons have been limited due to the challenges of achieving the required material control at subnanometre precision and efficient phonon coupling at terahertz frequencies. Here we demonstrate the efficient generation, detection and manipulation of terahertz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We used few-layer graphene as an ultrabroadband phonon transducer that converts femtosecond near-infrared pulses to acoustic-phonon pulses with spectral content up to 3 THz. A monolayer WSe2 is used as a sensor. The high-fidelity readout was enabled by the exciton–phonon coupling and strong light–matter interactions. By combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we performed terahertz phononic spectroscopy. Using this platform, we demonstrate high-Q terahertz phononic cavities and show that a WSe2 monolayer embedded in hexagonal boron nitride can efficiently block the transmission of terahertz phonons. By comparing our measurements to a nanomechanical model, we obtained the force constants at the heterointerfaces. Our results could enable terahertz phononic metamaterials for ultrabroadband acoustic filters and modulators and could open new routes for thermal engineering.
- 26 June 2024
- Published by Springer Nature in Nature
- Vol. 631 (8022) , 771-776
Terahertz phonon engineering with van der Waals heterostructures
Phonon engineering at gigahertz frequencies forms the foundation of microwave acoustic filters1, acousto-optic modulators2 and quantum transducers3,4. Terahertz phonon engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite their potential, methods for engineering terahertz phonons have been limited due to the challenges of achieving the required material control at subnanometre precision and efficient phonon coupling at terahertz frequencies. Here we demonstrate the efficient generation, detection and manipulation of terahertz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We used few-layer graphene as an ultrabroadband phonon transducer that converts femtosecond near-infrared pulses to acoustic-phonon pulses with spectral content up to 3 THz. A monolayer WSe2 is used as a sensor. The high-fidelity readout was enabled by the exciton–phonon coupling and strong light–matter interactions. By combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we performed terahertz phononic spectroscopy. Using this platform, we demonstrate high-Q terahertz phononic cavities and show that a WSe2 monolayer embedded in hexagonal boron nitride can efficiently block the transmission of terahertz phonons. By comparing our measurements to a nanomechanical model, we obtained the force constants at the heterointerfaces. Our results could enable terahertz phononic metamaterials for ultrabroadband acoustic filters and modulators and could open new routes for thermal engineering.
- Open Access
- 13 June 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-8
Johnson-noise-limited cancellation-free microwave impedance microscopy with monolithic silicon cantilever probes
Microwave impedance microscopy (MIM) is an emerging scanning probe technique for nanoscale complex permittivity mapping and has made significant impacts in diverse fields. To date, the most significant hurdles that limit its widespread use are the requirements of specialized microwave probes and high-precision cancellation circuits. Here, we show that forgoing both elements not only is feasible but also enhances performance. Using monolithic silicon cantilever probes and a cancellation-free architecture, we demonstrate Johnson-noise-limited, drift-free MIM operation with 15 nm spatial resolution, minimal topography crosstalk, and an unprecedented sensitivity of 0.26 zF/√Hz. We accomplish this by taking advantage of the high mechanical resonant frequency and spatial resolution of silicon probes, the inherent common-mode phase noise rejection of self-referenced homodyne detection, and the exceptional stability of the streamlined architecture. Our approach makes MIM drastically more accessible and paves the way for advanced operation modes as well as integration with complementary techniques.
- 13 June 2024
- Published by Springer Nature in Nature Communications
- Vol. 15 (1) , 1-8
Open AccessJohnson-noise-limited cancellation-free microwave impedance microscopy with monolithic silicon cantilever probes
Microwave impedance microscopy (MIM) is an emerging scanning probe technique for nanoscale complex permittivity mapping and has made significant impacts in diverse fields. To date, the most significant hurdles that limit its widespread use are the requirements of specialized microwave probes and high-precision cancellation circuits. Here, we show that forgoing both elements not only is feasible but also enhances performance. Using monolithic silicon cantilever probes and a cancellation-free architecture, we demonstrate Johnson-noise-limited, drift-free MIM operation with 15 nm spatial resolution, minimal topography crosstalk, and an unprecedented sensitivity of 0.26 zF/√Hz. We accomplish this by taking advantage of the high mechanical resonant frequency and spatial resolution of silicon probes, the inherent common-mode phase noise rejection of self-referenced homodyne detection, and the exceptional stability of the streamlined architecture. Our approach makes MIM drastically more accessible and paves the way for advanced operation modes as well as integration with complementary techniques.
- Open Access
- 11 June 2024
- Published by American Physical Society (APS) in Physical Review X
- Vol. 14 (2) , 021043
Orbital Ingredients and Persistent Dirac Surface State for the Topological Band Structure in(FTS) occupies a special spot in modern condensed matter physics at the intersections of electron correlation, topology, and unconventional superconductivity. The bulk electronic structure of FTS is predicted to be topologically nontrivial due to the band inversion between the and bands along . However, there remain debates in both the authenticity of the Dirac surface states (DSSs) and the experimental deviations of band structure from the theoretical band inversion picture. Here we resolve these debates through a comprehensive angle-resolved photoemission spectroscopy investigation. We first observe a persistent DSS independent of . Then, by comparing FTS with FeSe, which has no band inversion along , we identify the spectral weight fingerprint of both the presence of the band and the inversion between the and bands. Furthermore, we propose a renormalization scheme for the band structure under the framework of a tight-binding model preserving crystal symmetry. Our results highlight the significant influence of correlation on modifying the band structure and make a strong case for the existence of topological band structure in this unconventional superconductor.- 11 June 2024
- Published by American Physical Society (APS) in Physical Review X
- Vol. 14 (2) , 021043
Open AccessOrbital Ingredients and Persistent Dirac Surface State for the Topological Band Structure in(FTS) occupies a special spot in modern condensed matter physics at the intersections of electron correlation, topology, and unconventional superconductivity. The bulk electronic structure of FTS is predicted to be topologically nontrivial due to the band inversion between the and bands along . However, there remain debates in both the authenticity of the Dirac surface states (DSSs) and the experimental deviations of band structure from the theoretical band inversion picture. Here we resolve these debates through a comprehensive angle-resolved photoemission spectroscopy investigation. We first observe a persistent DSS independent of . Then, by comparing FTS with FeSe, which has no band inversion along , we identify the spectral weight fingerprint of both the presence of the band and the inversion between the and bands. Furthermore, we propose a renormalization scheme for the band structure under the framework of a tight-binding model preserving crystal symmetry. Our results highlight the significant influence of correlation on modifying the band structure and make a strong case for the existence of topological band structure in this unconventional superconductor.