Evgenii M. Trukhanov

It is established for the first time in the physics of condensed matter that the transitions of superstructural phases on the surface of an epitaxial nanof

A new mechanism of misfit stress relaxation in nanofilms with variable density of surface phases is established. This phenomenon is ensured by ordered mass transfer of atoms from the strained...

The crystallography of a quadrangular contour confining dislocation etch pits in the plane of the surface of a film is investigated via the structural-sensitive etching of GeSi epitaxial...

Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is...

A theoretical analysis of the process of introducing misfit dislocations into a semiconductor heterostructure with a (013) interface is performed by assuming conditions of quasi-equilibrium process....

A way of calculating the structural parameters of semiconductor epitaxial layers grown on miscut (0 0 1) substrates is developed. It is shown that the difference between the tensor of film elastic strains and the spherical tensor of strains translating the film’s crystal lattice into the substrate’s lattice is a tensor whose components are proportional to X-ray strains. The technique is used to analyze GaAs and Ge_0.2Si_0.8 films grown on (1 1 13) Si substrates. The anisotropy of the degree of plastic relaxation is established for lateral directions perpendicular and parallel to the interfacial steps in the GeSi film. It is proposed that noninteger Miller indices be used to denote the direction and value of the rotation of the film’s crystal lattice with respect to the substrate lattice.

Dislocations in heterostructures CdTe/ZnTe/GaAs(013) and CdTe/ZnTe/Si(013) were investigated using selective etching and transmission electron microscopy. The calculations of critical film thickness h_c were fulfilled for 12 various slip systems, the experimental results were obtained for 4 of them. Misfit dislocations are introduced in a ZnTe film at the stage of formation of the first monolayers. With their introduction, the crystal lattices of the substrate and the film unfold relative each other that is confirmed by X‐ray diffraction measurements. An increase in the dislocation density into the CdTe and HgCdTe films was observed using layer‐by‐layer etching. That is testifies to the annihilation of threading dislocations during the growth of CdTe and MCT films. The dislocation annihilation rate is higher in films grown on GaAs(013) than on Si(013). Perhaps this is due to the higher proportion of gliding dislocations in CdTe films on GaAs substrates (013). It was made annealing of MCT films under cyclic temperature change in such way that activity of MCT components was changed to enhance the non‐conservative motion of dislocations. As a result, the density of penetrating dislocations in the active areas in MCT films on silicon substrates was decreased to the value of 2.5×10⁶ cm^‐2.

Исследовано структурное состояние пленок GexSi1−x, выращенных на подложках Si вицинальной ориентации (1 1 13), отклоненной вокруг направления [11−0] на угол 6,2° от сингулярной ориентации (001). В пленках GexSi1−x содержание германия х в различных образцах составляло от 0,083 до 0,268. С помощью развитой авторами методики определения структурных параметров эпитаксиальных слоев по данным рентгеновской дифрактомерии проанализированы триклинные искажения, возникающие в кристаллической решетке пленки. Установлено, что в процессе эпитаксии решетка пленки поворачивается вокруг направления поверхностных ступеней в результате накопления в границе раздела дислокаций несоответствия, скользящих в плоскости (111). Дислокации с общим вектором Бюргерса типа а/2, не параллельным границе раздела, формируют аналог малоугловой границы. Значение угла разворота ψ прямо пропорционально плотности дислокаций несоответствия. Природа этого явления связана с уменьшением симметрии границы раздела, что приводит к изменению эффективности снятия несоответствия дислокациями, принадлежащими к разным дислокационным семействам. Рассмотрено участие этих семейств в процессе образования малоугловой границы. Для направлений [13 13 2−] и [1−10], лежащих в границе раздела (1 1 13), определены экспериментальные значения углов разворота ψ и сдвиговой деформации. Представлено сравнение экспериментальных и расчетных значений ψ для направления [13 13 2−].