Ying Wang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Ying Wang has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Chan Shan
Jimei University
1 shared publication - Cheng-Hao Yu
Innovation Center for Electronic Design Automation Technology, School of Electronics and Information (School of IC Science and Engineering), Hangzhou Dianzi University, Hangzhou, China
1 shared publication - Fei Cao
Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou, China
1 shared publication - Jianqun Yang
National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology, Harbin 150080, China
1 shared publication - Jianxiang Tang
The Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
1 shared publication - Wei Piao
Key Laboratory of RF Circuits and systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310018, China
1 shared publication
Latest Publications
- Open Access
- 26 January 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (2) , 91
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.
- 26 January 2019
- Published by MDPI AG in Micromachines
- Vol. 10 (2) , 91
Open AccessA Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.
- Open Access
- 14 December 2018
- Published by MDPI AG in Micromachines
- Vol. 9 (12) , 659
3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm−2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (Id-Vg) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.
- 14 December 2018
- Published by MDPI AG in Micromachines
- Vol. 9 (12) , 659
Open Access3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm−2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simulated using the Sentaurus 3D technology computer-aided design (TCAD) software. First, the transfer characteristics curves (Id-Vg) curves of the three layouts are compared to verify the radiation tolerance characteristic of the Z gate layout; then, the threshold voltage and the leakage current of the three layouts are extracted to compare their TID responses. Lastly, the threshold voltage shift and the leakage current increment at different radiation doses for the three layouts are presented and analyzed.