Sylvie Menezo
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Research Subjects
Sylvie Menezo has a total of 25 co-authors. Here are the top co-authors by number of shared publications:
A Souhaite
CEA, Leti, Minatec-Campus, DOPT, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
1 shared publicationA. Leliepvre
III-V lab, III-V Lab, a joint lab of 'Alcatel-Lucent Bell Labs France', 'Thales Research and Technology' and 'CEA Leti', Campus Polytechnique, 1, Avenue A. Fresnel, 91767 Palaiseau cedex, France
1 shared publicationA. Myko
CEA, Leti, Minatec-Campus, DOPT, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
1 shared publicationB. Ben Bakir
CEA, Leti, Minatec-Campus, DOPT, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
1 shared publicationB. Caire
CEA, Leti, Minatec-Campus, DOPT, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
1 shared publicationBertrand Szelag
CEA-Leti, 17 rue des Martyrs, 38000 Grenoble, France
1 shared publication
Latest Publications
- 2 January 2019
- Published by Optica Publishing Group in Optics Express
- Vol. 27 (1) , 102-109
30 GHz heterogeneously integrated capacitive InP-on-Si Mach–Zehnder modulators
We demonstrate high-bandwidth O-band Mach–Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 Vcm and a 3 dB bandwidth of up to 30 GHz was observed for a phase modulator length of 250 μm at a 0 V bias. Open eye patterns were observed at up to 25 Gb/s.- 2 January 2019
- Published by Optica Publishing Group in Optics Express
- Vol. 27 (1) , 102-109
30 GHz heterogeneously integrated capacitive InP-on-Si Mach–Zehnder modulators
We demonstrate high-bandwidth O-band Mach–Zehnder modulators with indium phosphide-on-silicon (InP-on-Si) capacitive phase shifters that are compatible with heterogeneous laser fabrication processes. An electro-optic conversion efficiency of 1.3 Vcm and a 3 dB bandwidth of up to 30 GHz was observed for a phase modulator length of 250 μm at a 0 V bias. Open eye patterns were observed at up to 25 Gb/s.- 26 October 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 28 (3) , 280-283
Simulation and Measurements of Chirp Penalties for Silicon Ring Resonator Modulators
Due to its compact size and its ability for wavelength dense multiplexing (WDM) implementation with low-insertion-loss, silicon ring resonator modulator (Si-RRM) is acknowledged to be a good candidate for off-board escape with demand for increased bandwidth densities (>1000 Gb/s/cm2) up to 2 km (intradata centers). Passive optical network with transmission reach up to ~50 km is another application where Si-RRMs could be of great interest (WDM and NGPON2 PONs). Nevertheless, one known characteristic of the Si-RRM is its inherent phase modulation when achieving intensity modulation, which leads to a modification of the transmission properties after propagation over a few kilometers of single-mode fiber (SMF). In this letter, we propose a model for simulating chirp effects of modulated Si-RRMs, and measure the associated transmission penalties over several SMF lengths. Simulations and measurements show to be in good agreement.
- 26 October 2015
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 28 (3) , 280-283
Simulation and Measurements of Chirp Penalties for Silicon Ring Resonator Modulators
Due to its compact size and its ability for wavelength dense multiplexing (WDM) implementation with low-insertion-loss, silicon ring resonator modulator (Si-RRM) is acknowledged to be a good candidate for off-board escape with demand for increased bandwidth densities (>1000 Gb/s/cm2) up to 2 km (intradata centers). Passive optical network with transmission reach up to ~50 km is another application where Si-RRMs could be of great interest (WDM and NGPON2 PONs). Nevertheless, one known characteristic of the Si-RRM is its inherent phase modulation when achieving intensity modulation, which leads to a modification of the transmission properties after propagation over a few kilometers of single-mode fiber (SMF). In this letter, we propose a model for simulating chirp effects of modulated Si-RRMs, and measure the associated transmission penalties over several SMF lengths. Simulations and measurements show to be in good agreement.
- 1 January 2014
- Published by Optica Publishing Group
- p. Th2A.22
Complete Si-Photonics Device-library on 300mm wafers
We report performances of active and passive devices in a Silicon-Photonic library on a 300mm-CMOS-platform, showing highly uniform behavior of passive WDM devices, Mach-Zehnder modulators and germanium photo-detectors with state of the art performances.
- 1 January 2014
- Published by Optica Publishing Group
- p. Th2A.22
Complete Si-Photonics Device-library on 300mm wafers
We report performances of active and passive devices in a Silicon-Photonic library on a 300mm-CMOS-platform, showing highly uniform behavior of passive WDM devices, Mach-Zehnder modulators and germanium photo-detectors with state of the art performances.