Anup Kumar Sahoo

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium tin oxide (ITO) thin films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400 °C, 600 °C and 800 °C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~27% for as-deposited to ~10% and ~39% for ITO films heat-treated at different annealing temperatures (T_a’s). Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude–Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10⁻³ to 10⁻⁴ Ω-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, μ = 47 cm²/V∙s, with carrier concentration, N_c = 1.31 × 10²¹ cm⁻³, was observed for ITO films annealed at T_a = 600 °C. The scattering times of the samples were in the range of 8–21 fs, with c-values of −0.63 to −0.87, indicating strong backscattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin films. For comparison, we have summarized the optical properties of ITO films sputtered onto fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400–800 nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra.

In this study, we explored the manipulation of optical properties in the terahertz (THz) frequency band of radio-frequency (RF) sputtered indium-tin-oxide (ITO) thin-films on highly resistive silicon substrate by rapid thermal annealing (RTA). The optical constants of as-deposited and RTA-processed ITO films annealed at 400°C, 600°C and 800°C are determined in the frequency range of 0.2 to 1.0 THz. The transmittance can be changed from ~ 27% for as-deposited to ~ 10% and ~ 39% for ITO films heat-treated at different annealing temperatures, T_a’s. Such variations of optical properties in the far infrared for the samples under study are correlated with their mobility and carrier concentration, which are extracted from Drude-Smith modeling of THz conductivity with plasma frequency, scattering time and the c-parameters as fitting parameters. Resistivities of the films are in the range of 10^-3 to 10^-4 W-cm, confirming that annealed ITO films can potentially be used as transparent conducting electrodes for photonic devices operating at THz frequencies. The highest mobility, m = 47 cm²/V∙s, with carrier concentration, N_c = 1.31´10²¹ cm^-3, was observed for ITO films annealed at T_a = 600°C. The scattering times of the samples were in the range of 8 – 21 fs, with c-values of -0.63 to -0.87, indicating strong back scattering of the carriers, mainly by grain boundaries in the polycrystalline film. To better understand the nature of these films, we have also characterized the surface morphology, microscopic structural properties and chemical composition of as-deposited and RTA-processed ITO thin-films. For comparison, we have summarized the optical properties of ITO films sputtered on fused silica substrates, as-deposited and RTA-annealed, in the visible transparency window of 400-800nm. The optical bandgaps of the ITO thin films were evaluated with a Tauc plot from the absorption spectra.

We investigate terahertz time-domain spectroscopy (THz-TDS) as a non-destructive and non-contact technique for depth profiling of dopants in semiconductors. THz temporal waveforms transmitted through silicon-ion-implanted semi-insulating gallium arsenide substrates, as-implanted or post-annealed by rapid thermal annealing, were analyzed by assuming a multi-layered Gaussian refractive index profile in the ∼sub-micrometer-thick implantation region. The implantation energy and dosages in this work were 200 KeV, 10¹⁴, 5 × 10¹⁴, and 10¹⁵ ions/cm², respectively. The average values of real (n) and imaginary (κ) parts of refractive indices of an as-implanted sample in the depth range of 0–800 nm are 5.8 and 0.7, respectively, at 0.5 THz and are 6.2 and 0.2, respectively, at 1 THz. On the other hand, the refractive index profile of the post-annealed samples displays a prominent Gaussian-like form, and peak refractive indices (n ∼ 25 and κ ∼ 32.7 at 0.5 THz and n, κ ∼17 at 1 THz) were found to be at the depth of 210 nm. Reconstructed dopant profiles in as-implanted, implanted, and post-annealed substrates were found to be in good agreement with measurements by secondary ion mass spectroscopy as well as simulation by the Monte Carlo method. We were also able to determine accurately the projected range (R_p), straggle (R_s), and concentration of dopants by the analysis of THz-TDS data. The spatial resolution, along the depth direction, of the THz-TDS technique for depth profiling of dopants was estimated to be as small as 8-nm. This work suggests the feasibility of using THz-TDS for nondestructive and non-contact diagnostics for profiling dopants in semiconductors.

In this study, we report enhancement of terahertz (THz) radiation with indium-tin-oxide (ITO) thin-film deposited on semi-insulating gallium arsenide substrate (SI-GaAs). The amplitude of THz emission from both ITO/SI-GaAs and bare SI-GaAs substrate as a function of optical pump (i) incident angle, (ii) polarization angle, and (iii) power were investigated. The enhancement of peak amplitude of a THz pulse transmitted through the ITO/SI-GaAs sample in comparison to bare SI-GaAs substrate varied from 100% to 0% when the pump incidence angle changed from 0° to 50°. The maximum enhancement ratio of peak amplitude for a coated sample relative to the bare substrate is approximately up to 2.5 times at the minimum pump intensity of 3.6 TW/m² and gradually decreased to one at the maximum pump intensity of 20 TW/m². From outcomes of these studies, together with data on surface and material characterization of the samples, we show that THz emission originates from the ITO/GaAs interfaces. Further, both interface-field-induced transient current and field-induced optical rectification contribute to the observed THz signal. Observed enhancement was tentatively attributed to surface-plasmon-induced local field enhancement, coupled with constructive interference of forward and retro-reflected backward THz emission from the ITO/GaAs interfaces. The polarity-flip reported previously for very thin Au-coated GaAs was not observed. This was explained by the wide-bandgap, transparency and lower free carriers of ITO. For best results, the incident angle should be in the range of 0 to 30° and the incident polarization should be 0 to 45°. We further predict that the ITO thin film of suitable thickness or with engineered nanostructures, post-annealed under optimum conditions may lead to further enhancement of THz radiation from ITO-coated semiconductor surfaces.

We demonstrate electrically tunable twisted nematic (TN) aligned liquid crystal (LC) terahertz phase shifters with a novel structure, in which a single LC composite polymer thin film is inserted in the middle of the LC cell. For designing such types of phase shifters, we have applied the Mauguin formalism used in LC-based switches for applications in the visible. Experimental results are in good agreement with those predicted by the theoretical model. Using this design, the phase shift has been increased by 14.3° at 1.2 THz in comparison to the conventional design (98.1°). The threshold voltage has been lowered from 0.81 V_RMS to 0.48 V_RMS while the driving voltage for quarter-wave (π/2) phase shift operation has been reduced from 8.4 V_RMS to 6.3 V_RMS at 1.2 THz. The dynamic response of devices also enhances significantly. Such design has also successfully been adopted to demonstrate a 2π phase shifter with similar improvement. Full-wave operation is achieved at a bias of 25 V_RMS at 1.2 THz using a highly birefringent LC material. Order parameter calculations show that the polymer film improves significantly LC molecular alignment in the thick LC cell for THz applications. We have also compared the figure of merits (FOMs) of the present devices with previously reported THz π/2 and 2π phase shifters.

A two-dimensional (2D) nonvolatile memory device architecture to improve the long-term charge retention with the minimum charge loss without compromising storage capacity and the extinction ratio for practical applications has been an imminent demand. To address the current issue, we adopted a novel type-II band-aligned heterobilayer channel comprising vertically stacked monolayer WSe₂ nanodots on monolayer WS₂. The band offset modulation leads to electron doping from WSe₂ nanodots into the WS₂ channel without any external driving electric field. As a result, the tested device outperformed with a memory window as high as 34 V and a negligible charge loss of 7% in a retention period of 10 years while maintaining a high extinction ratio of 10⁶. The doping technique presented in this work provides a feasible route to modulate the electrical properties of 2D channel materials without hampering charge transport, paving the way for high-performance 2D memory devices.

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 10⁶, 0.15 V/decade and 12.3 cm²/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 10⁷ and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.

In this work, we analyzed silicon (Si) ion implanted semi-insulting gallium arsenide substrates (SI-GaAs) by using a terahertz time-domain spectroscopy (THz-TDS) system. The main goal is to determine the ion doping profile via a nondestructive approach by using THz-TDS spectroscopy. This approach will bring a new appliance to replace secondary ion mass spectroscopy (SIMS). For that, we have carried out the ion implantation experiment with an implantation energy of 200 keV at different doses. Then, we analyzed the THz-TDS experimental data of implanted SI-GaAs substrates by the Drude model to achieve depth-dependent dielectric and electrical properties at THz frequencies.

In this work, we observed enhanced terahertz emission from the interface between indium tin oxide (ITO) and semi-insulating gallium arsenide (SI-GaAs) substrate. Further, we investigated the dependence of THz emission on pump power and angle of incident excitation beam. We found more than 3 times of THz emission power enhancement for incident angle below 70°. Besides, we found enhancement of THz radiation at low pump intensity and saturation with increasing peak excitation intensity beyond 20 TW/m ² . The experimental results are well explained by plasmonic effects at the metal-semiconductor interface.