Wenjie Yu

The surface quality of wafers processed by double-sided polishing (DSP) is significantly influenced by pad morphology. However, quantitative analysis remains challenging due to the complexity of dynamic contact conditions and the coupled effects of pressure and trajectory. To address material removal non-uniformity on wafer surfaces during DSP, this study focuses on the pressure–trajectory coupling mechanism and develops a material removal model incorporating pad topography effects. First, a kinematic model is established to derive the relative velocity of any point on the wafer. Secondly, a 3D elastic contact simulation model is constructed based on a linear elastic small-deformation model to obtain spatial pressure distribution under different pad morphologies. The full-cycle transient process is obtained by averaging typical steady-state conditions. A material removal calculation method is proposed by integrating time-dependent relative velocity and dynamic pressure within a modified Preston framework, and the model is validated against experimental results reported in the literature. Simulations and reported experiments demonstrate that pads with varying radial topographies generate differentiated pressure distribution. The results show that wafer radial within-wafer non-uniformity (WIWNU) can be effectively reduced to 1.002 by adjusting pad shape. This study extends the applicability of material removal rate models and provides a predictive framework for precision control in DSP wafer planarization.

To improve the process controllability and fabrication uniformity of porous silicon (PS)-based electron emission devices (EEDs), we employed an epitaxial (epi) silicon film as the functional layer, leveraging its advantages of high crystalline quality and flexibility of resistivity modulation regardless of the substrate. Precise modulation of the epi film resistivity was achieved via ion implantation. We investigated the effects of resistivity modulation on the fabrication process and device performance. This scheme enabled the formation of PS through electrochemical etching without illumination, and therefore etch self-termination. As a direct result, the etching uniformity in both the vertical and horizontal directions is enhanced. It then facilitated the optimization of the oxidation of the PS surface, which is essential for EED performance. The devices exhibited a maximum electron emission current density (J_e) of 80 μA/cm² with high stability. Driven under DC mode at a bias voltage (V_ps) of 23 V, J_e decreased temporarily to 28 μA/cm² after 4 h of continuous operation. This study provides a new feasible approach for research on PS EEDs.

With the booming development of the 5G market in recent years, super-high frequency (SHF) resonators will play an increasingly critical role in 5G and future communication systems. Facing the growing market demand for miniaturized, high-bandwidth, and low insertion loss filters, the design of SHF resonators and filters with a high effective electromechanical coupling coefficient (K²_eff) and quality factor, low insertion loss, high passband flatness, strong out-of-band rejection, and high power handling capacity has placed high demands on piezoelectric material preparation, process optimization, and resonator design. The polarity-inverted Al(Sc)N multilayer substrate has become one of the key solutions for SHF resonators. This review provides a comprehensive overview of the recent advances in SHF Al(Sc)N bulk acoustic wave (BAW) resonators. It systematically discusses the device design methodologies, structural configurations, and material synthesis techniques for high-quality Al(Sc)N thin films. Particular emphasis is placed on the underlying mechanisms and engineering strategies for polarity control in Al(Sc)N-based periodically poled multilayer structures. The progress in periodically poled piezoelectric film (P3F) BAW resonators is also examined, with special attention to their ability to significantly boost the operating frequency of BAW devices without reducing the thickness of the piezoelectric layer, while maintaining a high K²_eff. Finally, the review outlines current challenges and future directions for achieving a higher quality factor (Q), improved frequency scalability, and greater integration compatibility in SHF acoustic devices, paving the way for next-generation radio frequency (RF) front-end technologies in 5G/6G and beyond.

Cobalt electrochemical deposition, with its bottom–up growth properties, is a core technology for creating metal interconnects. Additives are crucial during electrodeposition to control the quality of deposits by adsorbing onto the Co surface. The functional groups of additive molecules are the key to tailoring the adsorption behavior. This study focuses on heteroaromatic thiol additives, including 2-mercaptobenzimidazole (MBI), 2-mercapto-5-benzimidazolesulfonic acid sodium salt dehydrate (MBIS), and 2-mercaptobenzoxazole (MBO). Cyclic voltammetry, chronopotentiometry, quantum chemical calculations, and characterization tests were employed to investigate the adsorption behavior of additive molecules with different functional groups on cobalt. The results indicate that the inhibitory strength of the three additives on electrodeposition follows the following order: MBI > MBIS > MBO. The strong inhibitory effect of MBI primarily stems from the adsorption of the thiol group, the pyridine-like nitrogen in the heterocycle, and the benzene ring. MBIS exhibits reduced inhibitory capability due to the combined effects of the sulfonic acid group and hydrolysis ionization. MBO, with the introduction of an oxygen atom in the heterocycle, shows the weakest adsorption and inhibitory capability among the three.

Copper interconnect technology faces limitations due to the electron’s mean free path and electromigration, driving the adoption of cobalt alternatives. This study proposes a novel mechanism to achieve superfilling by tuning the adsorption energy of additive molecules on cobalt surfaces. The adsorption energies of additives are tailored by changing molecular structures with different functional groups. Computational results reveal that carbon–carbon triple bonds critically strengthen adsorption, while ether bonds further enhance binding on distinct cobalt crystallographic planes. Specifically, 1,4-bis(2-hydroxyethoxy)-2-butyne (BEO) containing both triple bonds and ether groups exhibits the highest adsorption energy (−22.62 eV). Replacing ether with hydroxyl groups in 2-butyne-1,4-diol (BOZ) reduces the adsorption energy to −10.39 eV, while eliminating triple bonds in 1,4-butanediol diglycidyl ether (BDE) further decreases it to −8.43 eV. Experimental studies demonstrate that BOZ and BEO preferentially adsorb on the (101) and (110) planes of hexagonal close-packed cobalt (HCP-Co) due to their differential adsorption energies. This selective suppression promotes preferential growth along the densely packed (002) orientation. This leads to a trench-filling process dominated by the most densely packed plane, resulting in better electrical performance. Superfilling is achieved when molecular adsorption energies are in the range of 5–8 eV. The work establishes a functional group design strategy to regulate additive adsorption, enabling crystallographic control for advanced cobalt electrodeposition processes.

Understanding the mechanism of stress concentration effects on the surface of semiconductor substrate materials—silicon wafers—in Double-Sided Polishing (DSP) is particularly important for improving polishing quality. In this study, a two-dimensional finite element model is established to study the effect of contact state and stress concentration during polishing on edge roll-off (ERO) and polishing rate uniformity. The variation in this contact state is influenced by changes in wafer thickness and the gap between it and the carrier. The model is validated by experiments and helps to further analyze and interpret the experimental results, identifying six stages of contact states during the polishing process. The research indicates that the phenomenon of stress concentration at the edge of a wafer is caused by the pads creating a large amount of compression at the edge of the wafer. Additionally, there appears to be a threshold value during the polishing process, below which the stress concentration on the wafer changes, thereby altering the magnitude of edge roll-off and, ultimately, affecting overall flatness. This study provides a basis for optimizing the process design.

Chelating agents are commonly employed in microelectronic processes to prevent metal ion contamination. The ligand fragments of a chelating agent largely determine its binding strength to metal ions. Identification of ligands with suitable characteristics will facilitate the design of chelating agents to enhance the capture and removal of metal ions from the substrate in microelectronic processes. This study employed quantum chemical calculations to simulate the binding process between eleven ligands and the hydrated forms of Ni²⁺, Cu²⁺, Al³⁺, and Fe³⁺ ions. The binding strength between the metal ions and ligands was quantified using binding energy and binding enthalpy. Additionally, we explored the binding interaction mechanisms and explained the differences in binding abilities of the eleven ligands using frontier molecular orbitals, nucleophilic indexes, electrostatic potentials, and energy decomposition calculations based on molecular force fields. Based on our computational results, promising chelating agent structures are proposed, aiming to guide the design of new chelating agents to address metal ion contamination issues in integrated circuit processes.

Polyamines have become important chemical components used in several integrated circuit manufacturing processes, such as etching, chemical mechanical polishing (CMP), and cleaning. Recently, researchers pointed out that polyamines can be excellent enhancers in promoting the material removal rate (MRR) of Si CMP, but the interaction mechanism between the polyamines and the silicon surface has not been clarified. Here, the micro-interaction mechanisms of polyamines, including ethylenediamine (EDA), diethylenetriamine (DETA), triethylenetetramine (TETA), tetraethylenepentamine (TEPA), and pentaethylenehexamine (PEHA), with the Si(1, 0, 0) surface were investigated through molecular dynamics (MD) simulations using the ReaxFF reactive force field. Polyamines can adsorb onto the Si(1, 0, 0) surface, and the adsorption rate first accelerates and then tends to stabilize with the increase in the quantity of -CH₂CH₂NH-. The close connection between the adsorption properties of polyamines and the polishing rate has been confirmed by CMP experiments on silicon wafers. A comprehensive bond analysis indicates that the adsorption of polyamines can stretch surface Si–Si bonds, which facilitates subsequent material removal by abrasive mechanical wear. This work reveals the adsorption mechanism of polyamines onto the silicon substrate and the understanding of the MRR enhancement in silicon CMP, which provides guidance for the design of CMP slurry.

Despite the dominance of bulk acoustic wave (BAW) filters in the high-frequency market due to their superior performance and compatible integration process, the advent of the 5G era brings up new challenges to meet the ever-growing demands on high-frequency and large bandwidth. Al_1-xSc_xN piezoelectric films with high Sc concentration are particularly desirable to achieve an increased electromechanical coupling (K_t²) for BAW resonators and also a larger bandwidth for filters. In this paper, we designed and fabricated the Al_1-xSc_xN-based BAW resonators with Sc concentrations as high as 30%. The symmetry of the resonance region, border frame structure and thickness ratio of the piezoelectric stack are thoroughly examined for lateral modes suppression and resonant performance optimization. Benefiting from the 30% Sc doping, the fabricated BAW resonators demonstrate a large effective electromechanical coupling (K_eff²) of 17.8% at 4.75 GHz parallel resonant frequency. Moreover, the temperature coefficient of frequency (TCF) of the device is obtained as −22.9 ppm/°C, indicating reasonable temperature stability. Our results show that BAW resonators based on highly doped Al_1-xSc_xN piezoelectric film have great potential for high-frequency and large bandwidth applications.

Aluminum scandium nitride (Al_1−xSc_xN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d₃₃ of Al_1−xSc_xN film. The measurement results quantitatively demonstrated the piezoelectric effect of Al_1−xSc_xN films by lattice spacing variation upon applied external voltage. The as-extracted d₃₃ had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d₃₃ from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d₃₃ of AlN and Al_0.9Sc_0.1N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d₃₃ characterization.