Salvatore Cascino
Salvatore Cascino has a total of 49 co-authors. Here are the top co-authors by number of shared publications:
- Alberto Fazzi
Politecnico di Milano, Department of Energy, Via R. Lambruschini 4, 20156 Milano, Italy
1 shared publication - Andrea Stefanini
Sezione INFN and Università di Firenze, Via G. Sansone 1, I-50019 Sesto Fiorentino, Italy
1 shared publication - Angelo Giuseppe Sciacca
ST Microelectronics s.r.l., 95121 Catania, Italy
1 shared publication - Annamaria Muoio
Istituto Nazionale di Fisica Nucleare (INFN), Laboratori Nazionali del Sud (LNS), Via S. Sofia 62, 95123 Catania, Italy
1 shared publication - Antonello Santangelo
STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy
1 shared publication - Antonio Laudani
Department of Electrical Electronic and Computer Engineering (DIEEI), University of Catania, 95125 Catania, Italy
1 shared publication
Latest Publications
- Open Access
Investigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Qrr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Qrr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Qrr varies with the forward current only.
Open AccessInvestigation of SiC MOSFET Body Diode Reverse Recovery and Snappy Recovery Conditions
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function of different operating conditions. The knowledge of their effects is crucial to properly designing and driving power converters based on SiC devices, in order to optimize the MOSFETs commutations aiming at improving efficiency. Indeed, reverse recovery is a part of the switching transient, but it has a significant role due to its impact on recovery energy and charge. The set of different operating conditions has been properly chosen to prevent or force the snappy recovery of the device under testing. The experimental results and specific software simulations have revealed phenomena unknown in the literature. More specifically, the analysis of the reverse recovery charge, Qrr, revealed two unexpected phenomena at high temperatures: it decreased with increasing gate voltage; the higher the device threshold, the higher the Qrr. TCAD-Silvaco (ATLAS v. 5.29.0.C) simulations have shown that this is due to a displacement current flowing in the drift region due to the output capacitance voltage variation during commutation. From the analysis of the snappy recovery, it has emerged that there is a minimum forward current slope, below which the reverse recovery cannot be snappy, even for a high current level. Once this current slope is reached, Qrr varies with the forward current only.
- Open Access
SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.
Open AccessSiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.