Justo Miguel Gracia Jiménez
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Justo Miguel Gracia Jiménez has a total of 34 co-authors. Here are the top co-authors by number of shared publications:
- Antonio Coyopol
Instituto de Ciencias
4 shared publications - Enrique Rosendo
Posgrado en Dispositivos Semiconductores (PDS), Benemérita Universidad Autónoma de Puebla (BUAP)
4 shared publications - Fabiola Gabriela Nieto Caballero
BUAP, Fac Ciencias Quim, 14 Sur & Ave San Claudio,CU Edificio IFCQ4 201, Puebla 72570, Mexico
3 shared publications - Crisóforo Morales Ruiz
Centro de Investigación en Dispositivos Semiconductores, Benemérita Universidad Autónoma de Puebla, Ed. IC5, Av. San Claudio y Blvd. 18 Sur, Col. San Manuel, Puebla 72570, Mexico
2 shared publications - Francisco Morales-Morales
Centro de Investigaciones en Óptica A.C., Lomas del Bosque 115, Lomas del Campestre, León 37150, Mexico
2 shared publications - Godofredo García Salgado
Centro de Investigaciones en Dispositivos Semiconductores (CIDS-ICUAP), Benemérita Universidad Autónoma de Puebla (BUAP), Col. San Manuel, Cd. Universitaria, Av. San Claudio y 14 Sur, Edificios IC5 y IC6, Puebla 72570, Mexico
2 shared publications
Latest Publications
- Open Access
Influence of the Incorporation of Nd in ZnO Films Grown by the HFCVD Technique to Enhance Photoluminiscence Due to Defects
In this work, optical–structural and morphological behavior when Nd is incorporated into ZnO is studied. ZnO and Nd-doped ZnO (ZnO-Nd) films were deposited at 900 °C on Silicon n-type substrates (100) by using the Hot Filament Chemical Vapor Deposition (HFCVD) technique. For this, pellets were made by from powders of ZnO(s) and a mixture of ZnO(s):Nd(OH)3(s). The weight percent of the mixture ZnO:Nd(OH)3 in the pellet is 1:3. The gaseous precursor generation was carried out by chemical decomposition of the pellets using atomic hydrogen which was produced by a tungsten filament at 2000 °C. For the ZnO film, diffraction planes (100), (002), (101), (102), (110), and (103) were found by XRD. For the ZnO-Nd film, its planes are displaced, indicating the incorporation of Nd into the ZnO. EDS was used to confirm the Nd in the ZnO-Nd film with an atomic concentration (at%) of Nd = 10.79. An improvement in photoluminescence is observed for the ZnO-Nd film; this improvement is attributed to an increase in oxygen vacancies due to the presence of Nd. The important thing about this study is that by the HFCVD method, ZnO-Nd films can be obtained easily and with very short times; in addition, some oxide compounds can be obtained individually as initial precursors, which reduces the cost compared to other techniques. Something interesting is that the incorporation of Nd into ZnO by this method has not yet been studied, and depending on the method used, the PL of ZnO with Nd can increase or decrease, and by the HFCVD method the PL of the ZnO film, when Nd is incorporated, increases more than 15 times compared to the ZnO film.
Open AccessInfluence of the Incorporation of Nd in ZnO Films Grown by the HFCVD Technique to Enhance Photoluminiscence Due to Defects
In this work, optical–structural and morphological behavior when Nd is incorporated into ZnO is studied. ZnO and Nd-doped ZnO (ZnO-Nd) films were deposited at 900 °C on Silicon n-type substrates (100) by using the Hot Filament Chemical Vapor Deposition (HFCVD) technique. For this, pellets were made by from powders of ZnO(s) and a mixture of ZnO(s):Nd(OH)3(s). The weight percent of the mixture ZnO:Nd(OH)3 in the pellet is 1:3. The gaseous precursor generation was carried out by chemical decomposition of the pellets using atomic hydrogen which was produced by a tungsten filament at 2000 °C. For the ZnO film, diffraction planes (100), (002), (101), (102), (110), and (103) were found by XRD. For the ZnO-Nd film, its planes are displaced, indicating the incorporation of Nd into the ZnO. EDS was used to confirm the Nd in the ZnO-Nd film with an atomic concentration (at%) of Nd = 10.79. An improvement in photoluminescence is observed for the ZnO-Nd film; this improvement is attributed to an increase in oxygen vacancies due to the presence of Nd. The important thing about this study is that by the HFCVD method, ZnO-Nd films can be obtained easily and with very short times; in addition, some oxide compounds can be obtained individually as initial precursors, which reduces the cost compared to other techniques. Something interesting is that the incorporation of Nd into ZnO by this method has not yet been studied, and depending on the method used, the PL of ZnO with Nd can increase or decrease, and by the HFCVD method the PL of the ZnO film, when Nd is incorporated, increases more than 15 times compared to the ZnO film.
- Open Access
- 29 January 2024
- Published by Asociacion Latinoamericana para el Avance de la Ciencia in Ciencia Latina Revista Científica Multidisciplinar
- Vol. 8 (1) , 10970-10981
Aproximación de Parámetros Físicos en Silicio Poroso Infiltrado con Óxido de Titanio
Titanium oxide infiltrated in porous silicon system is studied using infrared spectroscopy (FTIR), photoluminescence (FL), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). The results of characterization and a model proposed in the literature, the parameters of material were determined, such as residual silicon particle size, pore diameter, density of the porous layer, specific surface area and concentration of surface bonds in this. These results allow us to have an idea of what characterizes the material, considering that these depend on several factors during synthesis. The incorporation of titanium oxide was carried out during the process synthesis of porous silicon, this oxide is located on the surface in agglomerates according to the results of SEM and EDS. In this way, the surface of material presents SiHx, TiOx, SiOH and SiOx type bonds according to the FTIR result that participate in the emission of material. Se estudia el sistema silicio poroso infiltrado con óxido de titanio mediante espectroscopia infrarroja con transformada de Fourier (FTIR), fotoluminiscencia (FL), microscopia electrónica de barrido (SEM) y espectroscopia de rayos X por dispersión en energía (EDS). Con los resultados de la caracterización y utilizando un modelo propuesto en la literatura se determinaron los parámetros del material, como tamaño de partícula de silicio residual, diámetro de poro, densidad de la capa porosa, superficie específica y concentración de enlaces superficiales en este; estos resultados permiten tener una idea de lo que caracteriza al material, considerando que estos dependen de varios factores durante la síntesis. La incorporación del óxido de titanio se llevó a cabo durante el proceso de síntesis del silicio poroso, este óxido se localiza sobre la superficie en aglomerados de acuerdo con los resultados de SEM y EDS. De esta forma la superficie del material presenta enlaces de tipo SiHx, TiOx, SiOH y SiOx de acuerdo con el resultado de FTIR que participan en la emisión del material.
- 29 January 2024
- Published by Asociacion Latinoamericana para el Avance de la Ciencia in Ciencia Latina Revista Científica Multidisciplinar
- Vol. 8 (1) , 10970-10981
Open AccessAproximación de Parámetros Físicos en Silicio Poroso Infiltrado con Óxido de Titanio
Titanium oxide infiltrated in porous silicon system is studied using infrared spectroscopy (FTIR), photoluminescence (FL), scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDS). The results of characterization and a model proposed in the literature, the parameters of material were determined, such as residual silicon particle size, pore diameter, density of the porous layer, specific surface area and concentration of surface bonds in this. These results allow us to have an idea of what characterizes the material, considering that these depend on several factors during synthesis. The incorporation of titanium oxide was carried out during the process synthesis of porous silicon, this oxide is located on the surface in agglomerates according to the results of SEM and EDS. In this way, the surface of material presents SiHx, TiOx, SiOH and SiOx type bonds according to the FTIR result that participate in the emission of material. Se estudia el sistema silicio poroso infiltrado con óxido de titanio mediante espectroscopia infrarroja con transformada de Fourier (FTIR), fotoluminiscencia (FL), microscopia electrónica de barrido (SEM) y espectroscopia de rayos X por dispersión en energía (EDS). Con los resultados de la caracterización y utilizando un modelo propuesto en la literatura se determinaron los parámetros del material, como tamaño de partícula de silicio residual, diámetro de poro, densidad de la capa porosa, superficie específica y concentración de enlaces superficiales en este; estos resultados permiten tener una idea de lo que caracteriza al material, considerando que estos dependen de varios factores durante la síntesis. La incorporación del óxido de titanio se llevó a cabo durante el proceso de síntesis del silicio poroso, este óxido se localiza sobre la superficie en aglomerados de acuerdo con los resultados de SEM y EDS. De esta forma la superficie del material presenta enlaces de tipo SiHx, TiOx, SiOH y SiOx de acuerdo con el resultado de FTIR que participan en la emisión del material.
- Open Access
Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia () environment is reported. The GaAs films were grown at 800, 900, and 1000 C, and the nitridation process was carried out at 900 C with an : gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in corresponding to . The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, , Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source.Open AccessStudy of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique
In this work, Gallium Arsenide (GaAs) films growth via Close Space Vapor Transport (CSVT) technique on n-type Silicon (Si) substrates (100) and its nitridation effect in the ammonia () environment is reported. The GaAs films were grown at 800, 900, and 1000 C, and the nitridation process was carried out at 900 C with an : gasses ratio. The GaAs films with and without nitridation process were analyzed using X-ray diffraction (XRD), Raman spectroscopy, Diffuse Reflectance Spectroscopy, and Scanning Electron Microscopy with Energy Dispersive X-ray analysis (SEM-EDX). Grazing incidence X-ray diffraction measurements of GaAs films nitrided confirm a polycrystalline GaN wurtzite structure with preferential orientation along (002), and additionality, a crystallographic plane (310) of low intensity is observed in corresponding to . The average quantification results in weight (Wt. %) of GaAs films nitrided was determined by EDS; Ga∼79, N∼17.1, O∼2 and As∼1.8 Wt. %. The presence of GaN, , Si, and GaAs modes were found by Raman measurements, demonstrating a partial nitriding. The band gap estimation by diffuse reflectance was between 3.2 and 3.38 eV such values are close to that reported for bulk GaN (3.4 eV). The presence of oxygen in the structure could be related to substrates or the GaAs source. - Open Access
- 28 April 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (9) , 1501
Blue Titania: The Outcome of Defects, Crystalline-Disordered Core-Shell Structure, and Hydrophilicity Change
In this research, changes in several characteristics of partially reduced titania were studied. The reduction process used made it possible to gradually observe changes in the material depending on the amount of reducing agent used. We used NaBH4 to impregnate commercial TiO2 with isopropyl alcohol. Impregnated TiO2 nanoparticles were dried and thermally treated in a nitrogen flow to obtain blue titania samples. Thorough spectroscopic characterization showed that oxygen atoms from hydroxyl groups, as well as from the surface, and the lattice of TiO2 was consumed. This caused changes in the surface and even in the bulk of TiO2 when the amount of reducing agent used was increased. Structural, optical, superficial, and textural characteristics were studied using XRD, Raman, DRS UV-Vis-NIR, Mid-DRIFT, XPS, and nitrogen adsorption/desorption isotherms. A photocatalytic test of the degradation of methylene blue dye was performed. Among different effects on the mentioned characteristics, we found evidence of changes in the surface properties of the blue titania samples and their probable effect on the photocatalytic properties. The reduction process implied a preponderant decrease in the surface hydrophilicity of the reduced samples, an effect shown for the first time in this type of material.
- 28 April 2022
- Published by MDPI AG in Nanomaterials
- Vol. 12 (9) , 1501
Open AccessBlue Titania: The Outcome of Defects, Crystalline-Disordered Core-Shell Structure, and Hydrophilicity Change
In this research, changes in several characteristics of partially reduced titania were studied. The reduction process used made it possible to gradually observe changes in the material depending on the amount of reducing agent used. We used NaBH4 to impregnate commercial TiO2 with isopropyl alcohol. Impregnated TiO2 nanoparticles were dried and thermally treated in a nitrogen flow to obtain blue titania samples. Thorough spectroscopic characterization showed that oxygen atoms from hydroxyl groups, as well as from the surface, and the lattice of TiO2 was consumed. This caused changes in the surface and even in the bulk of TiO2 when the amount of reducing agent used was increased. Structural, optical, superficial, and textural characteristics were studied using XRD, Raman, DRS UV-Vis-NIR, Mid-DRIFT, XPS, and nitrogen adsorption/desorption isotherms. A photocatalytic test of the degradation of methylene blue dye was performed. Among different effects on the mentioned characteristics, we found evidence of changes in the surface properties of the blue titania samples and their probable effect on the photocatalytic properties. The reduction process implied a preponderant decrease in the surface hydrophilicity of the reduced samples, an effect shown for the first time in this type of material.
- Open Access
- 28 January 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (2) , 222
Porous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
- 28 January 2020
- Published by MDPI AG in Nanomaterials
- Vol. 10 (2) , 222
Open AccessPorous Si-SiO2 UV Microcavities to Modulate the Responsivity of a Broadband Photodetector
Porous Si-SiO2 UV microcavities are used to modulate a broad responsivity photodetector (GVGR-T10GD) with a detection range from 300 to 510 nm. The UV microcavity filters modified the responsivity at short wavelengths, while in the visible range the filters only attenuated the responsivity. All microcavities had a localized mode close to 360 nm in the UV-A range, and this meant that porous Si-SiO2 filters cut off the photodetection range of the photodetector from 300 to 350 nm, where microcavities showed low transmission. In the short-wavelength range, the photons were absorbed and did not contribute to the photocurrent. Therefore, the density of recombination centers was very high, and the photodetector sensitivity with a filter was lower than the photodetector without a filter. The maximum transmission measured at the localized mode (between 356 and 364 nm) was dominant in the UV-A range and enabled the flow of high energy photons. Moreover, the filters favored light transmission with a wavelength from 390 nm to 510 nm, where photons contributed to the photocurrent. Our filters made the photodetector more selective inside the specific UV range of wavelengths. This was a novel result to the best of our knowledge.
- Open Access
Effect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique
The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the transport agent. An important point about the gaseous atmosphere is the ease in creating volatile compounds when it makes contact with the GaAs source, this favors the transport of material in a CSVT system. Chemical reactions are proposed in order to understand the significant difference produced from the gaseous atmosphere. The films grown with hydrogen are (almost) continuous and have homogeneous layers with preferential orientation (111). The films grown with nitrogen are granular and rough layers with the coexistence of the orientations (111), (220) and (311) in the crystals. The incorporation of impurities in the films was corroborated by energy dispersive spectroscopy (EDS) showing traces of oxygen and nitrogen for the case of the samples obtained with nitrogen. Films grown in a hydrogen atmosphere show a higher band gap than those grown in a nitrogen atmosphere. With the results of XRD and micro-Raman we observe a displacement and broadening of the peaks, characteristic of a structural disorder. The calculations of the FWHM allow us to observe the crystallinity degree and determine an approximate crystallite size using the Scherrer’s equation.
Open AccessEffect of the Gaseous Atmosphere in GaAs Films Grown by Close-Spaced Vapor Transport Technique
The effect of the gaseous atmosphere in the growth of gallium arsenide (GaAs) films was studied. The films have been grown by close-spaced vapor transport (CSVT) technique in a home-made hot filament chemical vapor deposition (HFCVD) reactor using molecular hydrogen and molecular nitrogen as the transport agent. An important point about the gaseous atmosphere is the ease in creating volatile compounds when it makes contact with the GaAs source, this favors the transport of material in a CSVT system. Chemical reactions are proposed in order to understand the significant difference produced from the gaseous atmosphere. The films grown with hydrogen are (almost) continuous and have homogeneous layers with preferential orientation (111). The films grown with nitrogen are granular and rough layers with the coexistence of the orientations (111), (220) and (311) in the crystals. The incorporation of impurities in the films was corroborated by energy dispersive spectroscopy (EDS) showing traces of oxygen and nitrogen for the case of the samples obtained with nitrogen. Films grown in a hydrogen atmosphere show a higher band gap than those grown in a nitrogen atmosphere. With the results of XRD and micro-Raman we observe a displacement and broadening of the peaks, characteristic of a structural disorder. The calculations of the FWHM allow us to observe the crystallinity degree and determine an approximate crystallite size using the Scherrer’s equation.
- Top Cited PapersOpen Access
- 3 January 2012
- Published by Springer Nature in Discover Nano
- Vol. 7 (1) , 1
Effects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors
Uniform, spherical-shaped TiO2:Eu nanoparticles with different doping concentrations have been synthesized through controlled hydrolysis of titanium tetrabutoxide under appropriate pH and temperature in the presence of EuCl3·6H2O. Through air annealing at 500°C for 2 h, the amorphous, as-grown nanoparticles could be converted to a pure anatase phase. The morphology, structural, and optical properties of the annealed nanostructures were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy [EDS], and UV-Visible diffuse reflectance spectroscopy techniques. Optoelectronic behaviors of the nanostructures were studied using micro-Raman and photoluminescence [PL] spectroscopies at room temperature. EDS results confirmed a systematic increase of Eu content in the as-prepared samples with the increase of nominal europium content in the reaction solution. With the increasing dopant concentration, crystallinity and crystallite size of the titania particles decreased gradually. Incorporation of europium in the titania particles induced a structural deformation and a blueshift of their absorption edge. While the room-temperature PL emission of the as-grown samples is dominated by the 5D0 - 7Fj transition of Eu+3 ions, the emission intensity reduced drastically after thermal annealing due to outwards segregation of dopant ions.
- 3 January 2012
- Published by Springer Nature in Discover Nano
- Vol. 7 (1) , 1
Top Cited PapersOpen AccessEffects of crystallization and dopant concentration on the emission behavior of TiO2:Eu nanophosphors
Uniform, spherical-shaped TiO2:Eu nanoparticles with different doping concentrations have been synthesized through controlled hydrolysis of titanium tetrabutoxide under appropriate pH and temperature in the presence of EuCl3·6H2O. Through air annealing at 500°C for 2 h, the amorphous, as-grown nanoparticles could be converted to a pure anatase phase. The morphology, structural, and optical properties of the annealed nanostructures were studied using X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy [EDS], and UV-Visible diffuse reflectance spectroscopy techniques. Optoelectronic behaviors of the nanostructures were studied using micro-Raman and photoluminescence [PL] spectroscopies at room temperature. EDS results confirmed a systematic increase of Eu content in the as-prepared samples with the increase of nominal europium content in the reaction solution. With the increasing dopant concentration, crystallinity and crystallite size of the titania particles decreased gradually. Incorporation of europium in the titania particles induced a structural deformation and a blueshift of their absorption edge. While the room-temperature PL emission of the as-grown samples is dominated by the 5D0 - 7Fj transition of Eu+3 ions, the emission intensity reduced drastically after thermal annealing due to outwards segregation of dopant ions.