Jing Zhang
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Research Interests
Jing Zhang has a total of 6 co-authors. Here are the top co-authors by number of shared publications:
- Nelson Tansu
Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, USA
2 shared publications - Guangyu Liu
King Abdullah University of Science and Technology (KAUST), Photonics Laboratory, Thuwal 23955-6900, Saudi Arabia
1 shared publication Hongping Zhao
Lehigh University Department of Electrical and Computer Engineering, Center for Optical Technologies Bethlehem, Pennsylvania 18015, USA
1 shared publication- Hongping Zhao
Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA
1 shared publication - Joo Hyung Park
Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin - Madison, Madison, WI, 53706, USA
1 shared publication - Luke J. Mawst
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
1 shared publication
Latest Publications
- Open Access
- 15 April 2011
- Published by Springer Nature in Discover Nano
- Vol. 6 (1) , 342
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN x layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiN x -treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.
- 15 April 2011
- Published by Springer Nature in Discover Nano
- Vol. 6 (1) , 342
Open AccessSelective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN x layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiN x -treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices.
- 13 September 2010
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (11) , 111105
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction–CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at ∼220–230 nm.
- 13 September 2010
- Published by AIP Publishing in Applied Physics Letters
- Vol. 97 (11) , 111105
Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
The optical gain characteristics of high Al-content AlGaN quantum wells (QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaN QW with AlN barriers is analyzed. Attributing to the strong transition between conduction–CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaN QWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaN QWs, which indicates the feasibility of TM lasing for lasers emitting at ∼220–230 nm.