Lulu Peng
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Lulu Peng has a total of 14 co-authors. Here are the top co-authors by number of shared publications:
- Don Disney
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore 738406, Singapore
2 shared publications - Kiat Seng Yeo
School of Microelectronics, Tianjin University, Tianjin, CHINA
2 shared publications - Mei Yu Soh
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore 738406, Singapore
2 shared publications - S. Lawrence Selvaraj
GLOBALFOUNDRIES Singapore Pte Ltd., Singapore 738406, Singapore
2 shared publications - Ao Zhou
CICS, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
1 shared publication - Bei Liu
Xidian University
1 shared publication
Latest Publications
- Open Access
- 29 March 2020
- Published by MDPI AG in Electronics
- Vol. 9 (4) , 575
92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs
LEDs are highly energy efficient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power efficiency with increased integration level for lighting device should be analysed. This paper proposes a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits. The performance of the proposed design is then compared with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC). The experimental results confirm that the fully on-chip integrated LED driver achieves a consistently higher power efficiency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V. The maximal percentage improvement in the efficiency of the on-chip solution compared with the on-board solution is 18%.
- 29 March 2020
- Published by MDPI AG in Electronics
- Vol. 9 (4) , 575
Open Access92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs
LEDs are highly energy efficient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power efficiency with increased integration level for lighting device should be analysed. This paper proposes a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits. The performance of the proposed design is then compared with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC). The experimental results confirm that the fully on-chip integrated LED driver achieves a consistently higher power efficiency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V. The maximal percentage improvement in the efficiency of the on-chip solution compared with the on-board solution is 18%.
- Open Access
- 22 March 2019
- Published by MDPI AG in Electronics
- Vol. 8 (3) , 351
Heterogeneous Integration of GaN and BCD Technologies
Light-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fabrication process enables LEDs to not only provide illumination, but also find applications in biology and life science research. To enable the new generation of LED devices, methods to improve the energy efficiency for possible battery operation and integration level for miniaturized lighting devices should be explored. This paper presents the first case of the heterogeneous integration of gallium nitride (GaN) power devices, both GaN LED and GaN transistor, with bipolar CMOS DMOS (BCD) circuits that can achieve this. To validate this concept, an LED driver was designed, implemented and verified experimentally. It features an output electrical power of 1.36 W and compact size of 2.4 × 4.4 mm2. The designed fully integrated LED lighting device emits visible light at a wavelength of approximately 454 nm and can therefore be adopted for biology research and life science applications.
- 22 March 2019
- Published by MDPI AG in Electronics
- Vol. 8 (3) , 351
Open AccessHeterogeneous Integration of GaN and BCD Technologies
Light-emitting diodes (LEDs) are solid-state devices that are highly energy efficient, fast switching, have a small form factor, and can emit a specific wavelength of light. The ability to precisely control the wavelength of light emitted with the fabrication process enables LEDs to not only provide illumination, but also find applications in biology and life science research. To enable the new generation of LED devices, methods to improve the energy efficiency for possible battery operation and integration level for miniaturized lighting devices should be explored. This paper presents the first case of the heterogeneous integration of gallium nitride (GaN) power devices, both GaN LED and GaN transistor, with bipolar CMOS DMOS (BCD) circuits that can achieve this. To validate this concept, an LED driver was designed, implemented and verified experimentally. It features an output electrical power of 1.36 W and compact size of 2.4 × 4.4 mm2. The designed fully integrated LED lighting device emits visible light at a wavelength of approximately 454 nm and can therefore be adopted for biology research and life science applications.
- 25 July 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (3) , 1993-1996
Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC
This paper presents a novel technology for the integration of GaN power devices with silicon control circuits. It comprises stacked gallium nitride (GaN) power transistors and Bipolar-CMOS-DMOS (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3V-to-70V DC-DC boost converter is designed, implemented, and verified experimentally. It features conversion efficiency of 70.3%, output power of 1.68 W, and compact size of 0.32 $\times$ 0.18 cm $^{2}$ .- 25 July 2018
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Power Electronics
- Vol. 34 (3) , 1993-1996
Heterogeneous Integration of GaN and BCD Technologies and Its Applications to High Conversion-Ratio DC–DC Boost Converter IC
This paper presents a novel technology for the integration of GaN power devices with silicon control circuits. It comprises stacked gallium nitride (GaN) power transistors and Bipolar-CMOS-DMOS (BCD) circuits. It leverages on both advantages of the high-voltage low-loss GaN devices and the high-integration BCD circuits. Using conventional manufacturing, packaging, and assembly techniques and equipment, the proposed technology is technology transferrable and applicable for commercial power electronic applications. To validate the concept, a 3.3V-to-70V DC-DC boost converter is designed, implemented, and verified experimentally. It features conversion efficiency of 70.3%, output power of 1.68 W, and compact size of 0.32 $\times$ 0.18 cm $^{2}$ .