Mariana Amorim Fraga
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Research Subjects
Mariana Amorim Fraga has a total of 248 co-authors. Here are the top co-authors by number of shared publications:
- Rodrigo Sávio Pessoa
Laboratório de Plasmas e Processos (LPP), Instituto Tecnológico de Aeronáutica (ITA), São José dos Campos 12228-900, SP, Brazil
46 shared publications - Marcos Massi
School of Engineering, Mackenzie Presbyterian University, São Paulo 01302-907, SP, Brazil
23 shared publications - Argemiro Soares da Silva Sobrinho
Laboratório de Plasmas e Processos (LPP), Instituto Tecnológico de Aeronáutica (ITA), São José dos Campos 12228-900, SP, Brazil
11 shared publications - William Chiappim
Laboratory of Plasmas and Applications, Department of Physics, Faculty of Engineering and Sciences, São Paulo State University (UNESP), Guaratinguetá 12516-410, Brazil
11 shared publications - N. K. A. M. Galvão
Plasma and Processes Laboratory, Instituto Tecnológico de Aeronáutica (ITA-DCTA), São José dos Campos, SP, 12228-900, Brazil
8 shared publications - Luiz Antonio Rasia
Regional University of the Northwest of the State of Rio Grande do Sul
7 shared publications
Latest Publications
- Open Access
- 30 October 2026
- Published by IOP Publishing in Materials Research Express
- Vol. 13 (21) , 212001
Rethinking MEMS sensors for harsh environments: beyond conventional materials and design approaches
Microelectromechanical systems sensors operating in harsh environments characterized by high temperatures, corrosive atmospheres, radiation, high pressure, and extreme mechanical loads are increasingly critical for aerospace, energy, automotive, nuclear, and industrial systems. Conventional silicon-based materials and standard device architectures, although highly successful under moderate conditions, face coupled limits in carrier leakage, interface stability, drift, and package reliability. This review article, supported by structured evidence mapping and quantitative comparative synthesis, differs from recent material-specific or sensor-specific surveys by organizing the field through an environment-to-system co-design framework that connects five decision levels: material properties, transduction metrics, structural architecture, fabrication and packaging interfaces, and reliability qualification. Quantitative comparison tables report bandgap, coefficient of thermal expansion, demonstrated operating temperature, sensitivity, drift, and quality factor where comparable data are available. The analysis shows that no material is intrinsically a complete harsh-environment solution: the usable envelope is set by the weakest element among the active material, electrodes, interfaces, package, and electronics. The resulting framework provides selection rules, identifies where silicon-on-insulator remains a bounded bridge technology, and highlights research needs in combined-environment qualification, scalable heterogeneous integration, and design.
- 30 October 2026
- Published by IOP Publishing in Materials Research Express
- Vol. 13 (21) , 212001
Open AccessRethinking MEMS sensors for harsh environments: beyond conventional materials and design approaches
Microelectromechanical systems sensors operating in harsh environments characterized by high temperatures, corrosive atmospheres, radiation, high pressure, and extreme mechanical loads are increasingly critical for aerospace, energy, automotive, nuclear, and industrial systems. Conventional silicon-based materials and standard device architectures, although highly successful under moderate conditions, face coupled limits in carrier leakage, interface stability, drift, and package reliability. This review article, supported by structured evidence mapping and quantitative comparative synthesis, differs from recent material-specific or sensor-specific surveys by organizing the field through an environment-to-system co-design framework that connects five decision levels: material properties, transduction metrics, structural architecture, fabrication and packaging interfaces, and reliability qualification. Quantitative comparison tables report bandgap, coefficient of thermal expansion, demonstrated operating temperature, sensitivity, drift, and quality factor where comparable data are available. The analysis shows that no material is intrinsically a complete harsh-environment solution: the usable envelope is set by the weakest element among the active material, electrodes, interfaces, package, and electronics. The resulting framework provides selection rules, identifies where silicon-on-insulator remains a bounded bridge technology, and highlights research needs in combined-environment qualification, scalable heterogeneous integration, and design.
- 6 October 2026
- Published by Springer Nature
- p. 835-861
Integration of Smart Polymers with Microelectromechanical Systems (MEMS)
- 6 October 2026
- Published by Springer Nature
- p. 835-861
Integration of Smart Polymers with Microelectromechanical Systems (MEMS)
- Open Access
- 27 August 2026
- Published by Frontiers Media SA in Frontiers in Carbon
- Vol. 5, 1924248
Future directions for diamond-like carbon in microsystems and microdevices
Diamond-like carbon (DLC) films have emerged as key materials for enhancing the performance, reliability, and durability of microsystems and microdevices. This perspective article presents an analysis of the scientific and technological evolution of DLC from a conventional protective coating to a multifunctional platform material for microsystems and microdevices. Recent advances in tailoring the mechanical, electrical, chemical, and surface properties of DLC have been discussed, highlighting its potential to mitigate friction, adhesion, and wear in microelectromechanical systems (MEMS), while enabling new functionalities in microsensors, biomedical devices, and microelectronic platforms. Despite significant progress, several challenges continue to hinder broader technological adoption, including residual stress management, low-temperature deposition compatible with complementary metal–oxide–semiconductor (CMOS) processes, large-area scalability, and long-term reliability under demanding operating conditions. Future developments are expected to rely on engineered DLC architectures, such as doped, multilayer, and nanostructured films, combined with advanced surface functionalization and intelligent process optimization to meet application-specific requirements. Furthermore, the need for standardized integration strategies that bridge the gap between laboratory-scale research and industrial manufacturing is emphasized.
- 27 August 2026
- Published by Frontiers Media SA in Frontiers in Carbon
- Vol. 5, 1924248
Open AccessFuture directions for diamond-like carbon in microsystems and microdevices
Diamond-like carbon (DLC) films have emerged as key materials for enhancing the performance, reliability, and durability of microsystems and microdevices. This perspective article presents an analysis of the scientific and technological evolution of DLC from a conventional protective coating to a multifunctional platform material for microsystems and microdevices. Recent advances in tailoring the mechanical, electrical, chemical, and surface properties of DLC have been discussed, highlighting its potential to mitigate friction, adhesion, and wear in microelectromechanical systems (MEMS), while enabling new functionalities in microsensors, biomedical devices, and microelectronic platforms. Despite significant progress, several challenges continue to hinder broader technological adoption, including residual stress management, low-temperature deposition compatible with complementary metal–oxide–semiconductor (CMOS) processes, large-area scalability, and long-term reliability under demanding operating conditions. Future developments are expected to rely on engineered DLC architectures, such as doped, multilayer, and nanostructured films, combined with advanced surface functionalization and intelligent process optimization to meet application-specific requirements. Furthermore, the need for standardized integration strategies that bridge the gap between laboratory-scale research and industrial manufacturing is emphasized.
- 1 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Devices Magazine
- Vol. 4 (2) , 13-14
The Semiconductor Capability Gap Beyond Natural Resource Abundance [Women in Electronic Devices]
- 1 June 2026
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Devices Magazine
- Vol. 4 (2) , 13-14
The Semiconductor Capability Gap Beyond Natural Resource Abundance [Women in Electronic Devices]
- 1 January 2026
- Published by International Solar Energy Society (ISES)
- p. 1-8
Teaching Renewable Energy Concepts with Portable Solar Panels: A Hands-On Learning Project
- 1 January 2026
- Published by International Solar Energy Society (ISES)
- p. 1-8
Teaching Renewable Energy Concepts with Portable Solar Panels: A Hands-On Learning Project
- 10 November 2025
- Published by Springer Nature in Journal of Materials Research
- Vol. 40 (22) , 3107-3118
Next-generation nanomaterials for biomedical integration: Synergy, function, and translation
- 10 November 2025
- Published by Springer Nature in Journal of Materials Research
- Vol. 40 (22) , 3107-3118
Next-generation nanomaterials for biomedical integration: Synergy, function, and translation
- Open Access
- 6 November 2025
- Published by IntechOpen
Silicon Carbide in Photoelectrochemical Water Splitting: Advances, Applications, and Future Horizons
Hydrogen is emerging as an outstanding sustainable energy alternative in the global shift toward renewable energy innovations. Photoelectrochemical (PEC) water splitting has gained attention as an environmentally friendly and efficient method for hydrogen production by harnessing solar energy. Among the various semiconductors investigated for PEC applications, silicon carbide (SiC) stands out due to its favorable energy band structure aligned with water redox potentials and exceptional chemical stability. Specifically, cubic SiC (3C-SiC) has drawn significant attention owing to its optimal bandgap of 2.36 eV, which allows for absorption of a portion of the visible spectrum. This chapter explores the recent advancements in SiC nanostructures, such as thin films, nanoparticles, and nanowires, for PEC water splitting applications. We highlight advanced fabrication techniques, examine the challenges encountered in integrating SiC into PEC systems, and discuss the practical outcomes. Focusing on future opportunities, this chapter aims to provide an overview of the current status of SiC technology’s role in PEC water splitting, inspiring further exploration and innovation in this emerging field.
- 6 November 2025
- Published by IntechOpen
Open AccessSilicon Carbide in Photoelectrochemical Water Splitting: Advances, Applications, and Future Horizons
Hydrogen is emerging as an outstanding sustainable energy alternative in the global shift toward renewable energy innovations. Photoelectrochemical (PEC) water splitting has gained attention as an environmentally friendly and efficient method for hydrogen production by harnessing solar energy. Among the various semiconductors investigated for PEC applications, silicon carbide (SiC) stands out due to its favorable energy band structure aligned with water redox potentials and exceptional chemical stability. Specifically, cubic SiC (3C-SiC) has drawn significant attention owing to its optimal bandgap of 2.36 eV, which allows for absorption of a portion of the visible spectrum. This chapter explores the recent advancements in SiC nanostructures, such as thin films, nanoparticles, and nanowires, for PEC water splitting applications. We highlight advanced fabrication techniques, examine the challenges encountered in integrating SiC into PEC systems, and discuss the practical outcomes. Focusing on future opportunities, this chapter aims to provide an overview of the current status of SiC technology’s role in PEC water splitting, inspiring further exploration and innovation in this emerging field.
- Open Access
- 24 April 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Reviews
- Vol. 2, 112-121
The Role of Semiconductor Thin Films in Advancing MEMS Sensor Technology
Semiconductor thin films are more than just materials—they are catalysts driving MEMS sensor technology toward enhanced performance, miniaturization, and cost-effectiveness. Recent innovations have highlighted their use, such as flexible transparent conductors and wide-bandgap materials, opening new possibilities—from wearable devices for medical applications to robust solutions for harsh environments. This perspective article explores the critical contributions of semiconductor thin films, including amorphous silicon (a-Si), polysilicon, silicon carbide (SiC), gallium nitride (GaN), and indium tin oxide (ITO), across a wide range of applications, from automotive systems to IoT-enabled smart technologies. SiC and GaN, known for their resilience in extreme conditions, and ITO, crucial for transparent, conductive devices, exemplify the expanding capabilities of these materials in industry 4.0 applications. Moreover, the transition from MEMS to NEMS is gaining attention, driven by advances in semiconductor thin film synthesis and design, which enable unprecedented device scaling and sensitivity. We also address emerging challenges, such as scalability and material consistency, and future directions for these materials in the development of future smart, interconnected and high-performance electronics systems.
- 24 April 2025
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Sensors Reviews
- Vol. 2, 112-121
Open AccessThe Role of Semiconductor Thin Films in Advancing MEMS Sensor Technology
Semiconductor thin films are more than just materials—they are catalysts driving MEMS sensor technology toward enhanced performance, miniaturization, and cost-effectiveness. Recent innovations have highlighted their use, such as flexible transparent conductors and wide-bandgap materials, opening new possibilities—from wearable devices for medical applications to robust solutions for harsh environments. This perspective article explores the critical contributions of semiconductor thin films, including amorphous silicon (a-Si), polysilicon, silicon carbide (SiC), gallium nitride (GaN), and indium tin oxide (ITO), across a wide range of applications, from automotive systems to IoT-enabled smart technologies. SiC and GaN, known for their resilience in extreme conditions, and ITO, crucial for transparent, conductive devices, exemplify the expanding capabilities of these materials in industry 4.0 applications. Moreover, the transition from MEMS to NEMS is gaining attention, driven by advances in semiconductor thin film synthesis and design, which enable unprecedented device scaling and sensitivity. We also address emerging challenges, such as scalability and material consistency, and future directions for these materials in the development of future smart, interconnected and high-performance electronics systems.
- Open Access
- 1 March 2025
- Published by IOP Publishing in Materials Research Express
- Vol. 12 (3) , 030201
Focus on women’s achievements and perspectives in materials sciences
- 1 March 2025
- Published by IOP Publishing in Materials Research Express
- Vol. 12 (3) , 030201
Open AccessFocus on women’s achievements and perspectives in materials sciences
- 1 December 2024
- Published by Universidade Brasil
- p. 300-303
CONSTRUÇÃO DE UM DISPOSITIVO PARA TRATAMENTO DE EPICONDILITE LATERAL COM LEDS INFRAVERMELHOS E VERMELHOS POR IMPRESSÃO 3D
A epicondilite lateral é caracterizada por microlesões e inflamação nos tendões dos músculos extensores. Vários métodos terapêuticos estão disponíveis para o manejo da epicondilite lateral, mas não há consenso sobre qual é o melhor. A Terapia de Fotobiomodulação (TFBM) vem sendo uma ótima opção de tratamento para essa afecção, pois sua ação age diretamente na modulação da inflamação e reparação tecidual. Trata-se de um estudo de revisão integrativa da literatura com estratégia direta de busca na plataforma PubMed. Foram incluídos artigos publicados no período de 2006 a 2023. Uma pesquisa avaliou a eficácia de um dispositivo desenvolvido com luz LED na região do epicôndilo lateral e direcionado para região do cotovelo. Os resultados deste estudo demonstraram melhorias significativas nos sintomas álgicos, da função, pressão e pinça após 6 semanas de uso da órtese e necessita de mais pesquisas para avançar no tratamento da epicondilite lateral, sugerindo uma ótima ferramenta para continuar com a pesquisas para essa afecção.
- 1 December 2024
- Published by Universidade Brasil
- p. 300-303
CONSTRUÇÃO DE UM DISPOSITIVO PARA TRATAMENTO DE EPICONDILITE LATERAL COM LEDS INFRAVERMELHOS E VERMELHOS POR IMPRESSÃO 3D
A epicondilite lateral é caracterizada por microlesões e inflamação nos tendões dos músculos extensores. Vários métodos terapêuticos estão disponíveis para o manejo da epicondilite lateral, mas não há consenso sobre qual é o melhor. A Terapia de Fotobiomodulação (TFBM) vem sendo uma ótima opção de tratamento para essa afecção, pois sua ação age diretamente na modulação da inflamação e reparação tecidual. Trata-se de um estudo de revisão integrativa da literatura com estratégia direta de busca na plataforma PubMed. Foram incluídos artigos publicados no período de 2006 a 2023. Uma pesquisa avaliou a eficácia de um dispositivo desenvolvido com luz LED na região do epicôndilo lateral e direcionado para região do cotovelo. Os resultados deste estudo demonstraram melhorias significativas nos sintomas álgicos, da função, pressão e pinça após 6 semanas de uso da órtese e necessita de mais pesquisas para avançar no tratamento da epicondilite lateral, sugerindo uma ótima ferramenta para continuar com a pesquisas para essa afecção.