Noriaki Takagi
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Previous Organizations / Institutes
The organizations / institutes from the scholar's other articles in the past ten years
Noriaki Takagi has a total of 162 co-authors. Here are the top co-authors by number of shared publications:
- Maki Kawai
Department of Advanced Materials Science, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
38 shared publications - Ryuichi Arafune
National Institute for Materials Science
28 shared publications M. Nishijima
Department of Chemistry, Graduate School of Science, Kyoto University, Kyoto 606-8502, Japan
24 shared publications- Chun-Liang Lin
National yang Ming Chiao Tung University
21 shared publications - Emi Minamitani
SANKEN, The University of Osaka 1 , Suita, Osaka 567-0047
18 shared publications - Tetsuya Aruga
Kyoto University
16 shared publications
Latest Publications
- Open Access
- 21 November 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (4)
Intertwined orbital distribution of charge density waves in NbSe 2
Charge density wave (CDW) resulting from a periodic distortion in the lattice creates orders beyond the original lattice. In 2 H − NbSe 2 , one of the layered transition metal dichalcogenides, the 3 × 3 charge order appears in two-dimensional (2D) layers. Although CDW can be observed by different techniques, the spatial distribution within a 2D layer has never been systematically visualized. Here, by using scanning tunneling microscopy and density functional theory, we monitored the evolution of CDW along the c axis and found a strong relation with the orbital charges. The results show that the appearance of the CDW varies while tuning the tunneling current and undergoes a transition from Se orbital charges to Nb orbital charges. The calculation of orbital charge distributions shows that both CDW intensity modulation and the transition are strongly intertwined with the distribution of Se 4 p orbitals and Nb 4 d orbitals.
- 21 November 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (4)
Open AccessIntertwined orbital distribution of charge density waves in NbSe 2
Charge density wave (CDW) resulting from a periodic distortion in the lattice creates orders beyond the original lattice. In 2 H − NbSe 2 , one of the layered transition metal dichalcogenides, the 3 × 3 charge order appears in two-dimensional (2D) layers. Although CDW can be observed by different techniques, the spatial distribution within a 2D layer has never been systematically visualized. Here, by using scanning tunneling microscopy and density functional theory, we monitored the evolution of CDW along the c axis and found a strong relation with the orbital charges. The results show that the appearance of the CDW varies while tuning the tunneling current and undergoes a transition from Se orbital charges to Nb orbital charges. The calculation of orbital charge distributions shows that both CDW intensity modulation and the transition are strongly intertwined with the distribution of Se 4 p orbitals and Nb 4 d orbitals.
- 24 October 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (16)
Probing moiré Bloch bands of photoexcited electrons on graphene/Ir(111)
- 24 October 2025
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (16)
Probing moiré Bloch bands of photoexcited electrons on graphene/Ir(111)
- Open Access
- 23 June 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (2)
Gap opening of image potential state on reconstructed Ir(001) surface
We have investigated the image potential states (IPSs) for the unreconstructed Ir ( 001 ) − ( 1 × 1 ) and the reconstructed Ir ( 001 ) − ( 5 × 1 ) surfaces by using two-photon photoemission spectroscopy. We reveal that the Ir ( 001 ) − ( 5 × 1 ) reconstructed surface covered by Xe adatoms exhibits a band gap of 100 meV, which arises from the new periodic potential created by the reconstruction, whereas no band gap was observed on the Ir ( 001 ) − ( 1 × 1 ) surface within the measured momentum range. The experimental results are compared with the theoretical ones obtained within density functional theory for both the clean and Xe-covered Ir ( 001 ) − ( 5 × 1 ) reconstructed surfaces. The planar averaged charge density distributions of the IPS for both the surfaces show that the Xe adsorption does not significantly alter the positions of charge density maxima, which rationalizes why the band gap arising from the substrate superlattice potential does not change significantly upon Xe adsorption. The agreement between the experimentally observed band gap for the IPS on the Xe-covered surface and the theoretical calculations highlights the robustness of IPS behavior under Xe adsorption. Published by the American Physical Society 2025
- 23 June 2025
- Published by American Physical Society (APS) in Physical Review Research
- Vol. 7 (2)
Open AccessGap opening of image potential state on reconstructed Ir(001) surface
We have investigated the image potential states (IPSs) for the unreconstructed Ir ( 001 ) − ( 1 × 1 ) and the reconstructed Ir ( 001 ) − ( 5 × 1 ) surfaces by using two-photon photoemission spectroscopy. We reveal that the Ir ( 001 ) − ( 5 × 1 ) reconstructed surface covered by Xe adatoms exhibits a band gap of 100 meV, which arises from the new periodic potential created by the reconstruction, whereas no band gap was observed on the Ir ( 001 ) − ( 1 × 1 ) surface within the measured momentum range. The experimental results are compared with the theoretical ones obtained within density functional theory for both the clean and Xe-covered Ir ( 001 ) − ( 5 × 1 ) reconstructed surfaces. The planar averaged charge density distributions of the IPS for both the surfaces show that the Xe adsorption does not significantly alter the positions of charge density maxima, which rationalizes why the band gap arising from the substrate superlattice potential does not change significantly upon Xe adsorption. The agreement between the experimentally observed band gap for the IPS on the Xe-covered surface and the theoretical calculations highlights the robustness of IPS behavior under Xe adsorption. Published by the American Physical Society 2025
- Open Access
- 1 June 2025
- Published by IOP Publishing in Applied Physics Express
- Vol. 18 (6) , 062001
Coherent multiphoton photoemission spectroscopy of image-potential state on Ir(111) surface
Multiphoton photoemission provides a means to investigate unoccupied electronic states via nonlinear light-matter interactions. In this work, we employ five-photon photoemission spectroscopy to identify, for the first time, the image-potential state (IPS) on the Ir(111) surface. Distinct from commonly studied noble metals such as Cu and Ag, the Ir(111) electronic structure leads to a strong sensitivity to excitation energy: a reduction from 1.57 eV to 1.49 eV significantly diminishes the signal. The theoretical analysis attributes this effect to the d-band proximity to the Fermi level, which influences the initial-state population and transition probabilities governing the multiphoton excitation pathways.
- 1 June 2025
- Published by IOP Publishing in Applied Physics Express
- Vol. 18 (6) , 062001
Open AccessCoherent multiphoton photoemission spectroscopy of image-potential state on Ir(111) surface
Multiphoton photoemission provides a means to investigate unoccupied electronic states via nonlinear light-matter interactions. In this work, we employ five-photon photoemission spectroscopy to identify, for the first time, the image-potential state (IPS) on the Ir(111) surface. Distinct from commonly studied noble metals such as Cu and Ag, the Ir(111) electronic structure leads to a strong sensitivity to excitation energy: a reduction from 1.57 eV to 1.49 eV significantly diminishes the signal. The theoretical analysis attributes this effect to the d-band proximity to the Fermi level, which influences the initial-state population and transition probabilities governing the multiphoton excitation pathways.
- 26 August 2022
- Published by American Physical Society (APS) in Physical Review B
- Vol. 106 (7) , 075428
Noncentrosymmetric characteristics of defects onTungsten ditelluride is a transition metal dichalcogenide with novel electronic structures and unique properties for application to next-generation devices. Defects in can impact its properties in both positive and negative ways. Therefore, it urgently requires a precise classification to help understand the possible impacts. Here we report on both geometric and electronic characteristics of the defects in identified by the combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculation. We found four types of defects derived from a missing Te atom; two of them are located at the topmost surface while the others are under the surface. The former are imaged topographically and are ascribed to point vacancies of surface Te atoms. The DFT calculations reveal the noncentrosymmetric displacements of atoms around the defects and reasonably reproduce the STM images. Interestingly, the latter defects are hardly observed but they are dressed with the noncentrosymmetric quasiparticle interference (QPI) fringes which enable us to identify them. These findings demonstrate that STM-QPI can be a feasible method to characterize the defects in layered materials.- 26 August 2022
- Published by American Physical Society (APS) in Physical Review B
- Vol. 106 (7) , 075428
Noncentrosymmetric characteristics of defects onTungsten ditelluride is a transition metal dichalcogenide with novel electronic structures and unique properties for application to next-generation devices. Defects in can impact its properties in both positive and negative ways. Therefore, it urgently requires a precise classification to help understand the possible impacts. Here we report on both geometric and electronic characteristics of the defects in identified by the combination of scanning tunneling microscopy (STM) and density functional theory (DFT) calculation. We found four types of defects derived from a missing Te atom; two of them are located at the topmost surface while the others are under the surface. The former are imaged topographically and are ascribed to point vacancies of surface Te atoms. The DFT calculations reveal the noncentrosymmetric displacements of atoms around the defects and reasonably reproduce the STM images. Interestingly, the latter defects are hardly observed but they are dressed with the noncentrosymmetric quasiparticle interference (QPI) fringes which enable us to identify them. These findings demonstrate that STM-QPI can be a feasible method to characterize the defects in layered materials.- Open Access
- 20 November 2020
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (19) , 195425
First-principles calculation of the graphene Dirac band on semi-infinite Ir(111)
We study the energy dispersion relation of the and bands in epitaxial monolayer graphene on a semi-infinite Ir(111) substrate by a first-principles density-functional calculation. For this purpose, we employ a realistic surface structure in which the unit cell of graphene matches a cell of Ir(111). We determine the surface geometry by using a slab model containing four Ir layers, and the optimized structure is used as input for the subsequent surface embedded Green's function calculation. By taking advantage of semi-infinite calculations, we discuss mini energy gaps at the crossing of the band and its replicas, the Rashba-type spin splitting of the and bands, and also the energy width of both bands arising from interactions with the energy continuum of bulk Ir bands.- 20 November 2020
- Published by American Physical Society (APS) in Physical Review B
- Vol. 102 (19) , 195425
Open AccessFirst-principles calculation of the graphene Dirac band on semi-infinite Ir(111)
We study the energy dispersion relation of the and bands in epitaxial monolayer graphene on a semi-infinite Ir(111) substrate by a first-principles density-functional calculation. For this purpose, we employ a realistic surface structure in which the unit cell of graphene matches a cell of Ir(111). We determine the surface geometry by using a slab model containing four Ir layers, and the optimized structure is used as input for the subsequent surface embedded Green's function calculation. By taking advantage of semi-infinite calculations, we discuss mini energy gaps at the crossing of the band and its replicas, the Rashba-type spin splitting of the and bands, and also the energy width of both bands arising from interactions with the energy continuum of bulk Ir bands. - 18 March 2020
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 32 (24) , 243001
Scanning tunneling spectroscopy studies of topological materials
Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe 2 and MoTe 2 ) to two dimensional topological insulators ( layered bismuth and silicene ). The electronic characteristics of these layered topological materials are experimentally identified.
- 18 March 2020
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 32 (24) , 243001
Scanning tunneling spectroscopy studies of topological materials
Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe 2 and MoTe 2 ) to two dimensional topological insulators ( layered bismuth and silicene ). The electronic characteristics of these layered topological materials are experimentally identified.
- 26 December 2019
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 124 (3) , 2008-2012
Mechanically Tunable Spontaneous Vertical Charge Redistribution in Few-Layer WTe2
- 26 December 2019
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry C
- Vol. 124 (3) , 2008-2012
Mechanically Tunable Spontaneous Vertical Charge Redistribution in Few-Layer WTe2
- 1 December 2018
- Published by Elsevier in Progress in Surface Science
- Vol. 93 (4) , 177-188
Spin-orbit interaction in unoccupied surface states
- 1 December 2018
- Published by Elsevier in Progress in Surface Science
- Vol. 93 (4) , 177-188
Spin-orbit interaction in unoccupied surface states