Dong Zhong

We theoretically analyze the spatial Goos-Hänchen (GH) shifts in symmetric Graphene-Integrated Bragg Gratings (GIBGs), where monolayer graphene arrays act as tunable input/output couplers, and a periodically inserted dielectric layer forms a resonant cavity. By optimizing the cavity design, we achieve a GH shift of 1766λ, surpassing the conventional limit of hundreds of wavelengths under single-parameter tuning. The direction and magnitude can be actively controlled by the graphene’s chemical potential, grating geometry, or dielectric thickness. This mechanism may enable high-sensitivity refractive index sensors or adaptive optical devices.

Laser direct lithography allows for the maskless production and alignment of nanocrystals. However, laser-induced crystal growth requires a complex process of nucleation followed by growth that takes a long time, resulting in low efficiency. Here, we used a laser explosion to pre-grow silicon seed crystals in a silicon precursor solution, simplified crystal growth and increased the lithography efficiency. By operating the laser exposure time, the crystal size can be controlled, and even inducing the fusion of nanocrystalline into single crystal grains. As a proof of concept, we fabricated silicon quantum dot architectures with a direct lithography rate of 350 µm/s by this strategy, achieving quantum dot growth within ∼0.54 milliseconds time in an ambient environment. The silicon quantum dots could be contact and fusion through a laser modulation, ultimately forming single silicon microcrystals within the architectures of lithography.

We investigate the photonic bandgaps in graphene-pair arrays. Graphene sheets are installed in a bulk substrate to form periodical graphene photonic crystal. The compound system approves a photonic band structure as a light impinges on it. Multiple stopbands are induced by changing the incident frequency of light. The stopbands widths and their central frequencies could be modulated through the graphene chemical potential. The number of stopbands decreases with the increase in the spatial period of graphene pairs. Otherwise, two full passbands are realized in the parameter space composed of the incident angle and the light frequency. This investigation has potentials applied in tunable multi-stopbands filters.

The optical bistability, tristability and multistability are explored in arrays of graphene. The arrays are periodically arranged spatially by single sheets of graphene. Optical bistability could be achieved with a strong enough incident intensity of light wave. The thresholds of optical bistability and the intervals between the upper and lower thresholds change with the surface conductivity of graphene and the incident wavelength. By increasing the intensity of incident light, tristability and multistability can be induced as well. Furthermore, the thresholds of bistability, tristability and multistability can be regulated via the chemical potential of graphene. This study may have potential applications in optical logic gates, all-optical switches and photomemory.

We explore the optical bistability in aperiodic parity–time-symmetric (PT-symmetric) photonic lattices that are composed of Fibonacci sequence dielectrics and graphene at terahertz frequencies. Two Fibonacci sequence dielectrics, viz. aperiodic photonic lattices, are utilized for enhancing band-edge resonances and achieving the electric field localization that can enhance the nonlinearity of graphene. Modulating the gain-loss factor of dielectrics in the PT symmetry lattices further strengthens the nonlinearity effect and, consequently, low threshold bistability is realized. The interval between the upper and lower bistability thresholds enlarges as the momentum relaxation time of graphene changes. Moreover, we show that the bistability threshold can also be flexibly tuned by modulating the graphene chemical potential. The study might be applied in photomemories and optical switches.

Complex anti-parity-time symmetric periodic lattices, in a wide frequency band, can act as unidirectional invisible media. The reflection from one end is suppressed while it is enhanced from the other. Furthermore, unidirectional laser points (ULPs) which correspond to the poles of reflection from one end, arise in the parameter space composed of the permittivity and angular frequency. The phase of the reflection coefficient changes sharply near the ULPs. Subsequently, large lateral shift which is proportional to the slope of phase could be induced for the reflected beam. The study may find great applications in unidirectional invisibility, unidirectional lasers and highly sensitive sensors.

We investigate the coherent perfect absorption laser points (CPA-LPs) in anti-parity–time-symmetric photonic crystals. CPA-LPs, which correspond to the poles of reflection and transmission, can be found in the parameter space composed of gain–loss factor and angular frequency. Discrete exceptional points (EPs) split as the gain–loss factor increases. The CPA-LPs sandwiched between the EPs are proved to be defective modes. The localization of light field and the bulk effect of gain/loss in materials induce a sharp change in phase of the reflection coefficient near the CPA-LPs. Consequently, a large spatial Goos–Hänchen shift, which is proportional to the slope of phase, can be achieved around the CPA-LPs. The study may find great applications in highly sensitive sensors.

This study investigates the reflectance of the defective mode (DM) and the lateral shift of reflected beam in defective photonic crystals incorporated with single-layer graphene by the transfer matrix method (TMM). Graphene, treated as an equivalent dielectric with a thickness of 0.34 nm, was embedded in the center of a defect layer. The reflectance of the DM was greatly enhanced as the intraband transition of electrons was converted to an interband transition in graphene. The reflectance of the DM could be further enhanced by increasing the Bragg periodic number. Furthermore, a large lateral shift of the reflected beam could also be induced around the DM. This study may find great applications in highly sensitive sensors.