Xubing Guo
Current Organizations / Institutes
The organizations/institutes from the scholar's latest article
Xubing Guo has a total of 11 co-authors. Here are the top co-authors by number of shared publications:
- Zhongliang Deng
Beijing University of Posts and Telecommunications
3 shared publications - Hao Wei
The 54th Research Institute of China Electronics Technology Group Corporation, Shijiazhuang 050051, China
2 shared publications - Ke Han
Beijing University of Posts and Telecommunications
2 shared publications Hao Wei
School of Electronic Engineering Beijing University of Posts and Telecommunications 100876 Beijing China
1 shared publicationJun Gan
School of Electronic Engineering Beijing University of Posts and Telecommunications 100876 Beijing China
1 shared publication- Jun Gan
School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China
1 shared publication
Latest Publications
- Open Access
- 6 August 2018
- Published by MDPI AG in Micromachines
- Vol. 9 (8) , 390
Novel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.
- 6 August 2018
- Published by MDPI AG in Micromachines
- Vol. 9 (8) , 390
Open AccessNovel High-Capacitance-Ratio MEMS Switch: Design, Analysis and Performance Verification
This paper proposes a novel high-capacitance-ratio radio frequency micro-electromechanical systems (RF MEMS) switch. The proposed RF MEMS mainly consists of serpentine flexure MEMS metallic beam, comprised of coplanar waveguide (CPW) transmission line, dielectric and metal-insulator-metal (MIM) floating metallic membrane. Comparing the proposed high-capacitance-ratio MEMS switch with the ones in available literature, an acceptable insertion loss insulation, acceptable response time and high capacitance ratio (383.8) are achieved.
- Open Access
- 4 January 2017
- Published by MDPI AG in Micromachines
- Vol. 8 (1) , 11
Design and Analysis of a Silicon-Based Pattern Reconfigurable Antenna Employing an Active Element Pattern Method
In this paper, a silicon-based radio frequency micro-electromechanical systems (RF MEMS) pattern reconfigurable antenna for a Ka-band application was designed, analyzed, fabricated, and measured. The proposed antenna can steer the beam among three radiating patterns (with main lobe directions of −20°, 0°, and +20° approximately) at 35 GHz by switching RF MEMS operating modes. The antenna has a low profile with a small size of 3.7 mm × 4.4 mm × 0.4 mm, and consists of one driven patch, four parasitic patches, two assistant patches, and two RF MEMS switches. The active element pattern method integrated with signal flow diagram was employed to analyze the performances of the proposed antenna. Comparing the measured results with analytical and simulated ones, good agreements are obtained.
- 4 January 2017
- Published by MDPI AG in Micromachines
- Vol. 8 (1) , 11
Open AccessDesign and Analysis of a Silicon-Based Pattern Reconfigurable Antenna Employing an Active Element Pattern Method
In this paper, a silicon-based radio frequency micro-electromechanical systems (RF MEMS) pattern reconfigurable antenna for a Ka-band application was designed, analyzed, fabricated, and measured. The proposed antenna can steer the beam among three radiating patterns (with main lobe directions of −20°, 0°, and +20° approximately) at 35 GHz by switching RF MEMS operating modes. The antenna has a low profile with a small size of 3.7 mm × 4.4 mm × 0.4 mm, and consists of one driven patch, four parasitic patches, two assistant patches, and two RF MEMS switches. The active element pattern method integrated with signal flow diagram was employed to analyze the performances of the proposed antenna. Comparing the measured results with analytical and simulated ones, good agreements are obtained.
- Open Access
- 24 August 2016
- Published by MDPI AG in Micromachines
- Vol. 7 (9) , 149
21.69–24.36 GHz MEMS Tunable Band-Pass Filter
The K-band microelectromechanical systems (MEMS) tunable band-pass filter, with a wide-frequency tunable range and miniature size, is able to fulfill the requirements of the multiband satellite communication systems. A novel 21.69–24.36 GHz MEMS tunable band-pass filter is designed, analyzed, fabricated and measured. This paper also designs and analyzes an inductively tuned slow-wave resonator, which consists of the MEMS capacitive switch, the MEMS capacitor and the short metal line. The proposed filter has four different work states by changing the capacitance values of the MEMS switches. Measured results demonstrate that, for all four states, the insertion loss is 2.81, 3.27, 3.65 and 4.03 dB at 24.36, 23.2, 22.24 and 21.69 GHz, respectively. The actuation voltage is 0, 20, 16 and 26 V, respectively. The 3 dB bandwidth of the tunable filter is 5.4%, 6.2%, 5.7% and 5.9%, respectively. This study contributes to the design of miniature millimeter tunable filters with a wide-frequency tunable range.
- 24 August 2016
- Published by MDPI AG in Micromachines
- Vol. 7 (9) , 149
Open Access21.69–24.36 GHz MEMS Tunable Band-Pass Filter
The K-band microelectromechanical systems (MEMS) tunable band-pass filter, with a wide-frequency tunable range and miniature size, is able to fulfill the requirements of the multiband satellite communication systems. A novel 21.69–24.36 GHz MEMS tunable band-pass filter is designed, analyzed, fabricated and measured. This paper also designs and analyzes an inductively tuned slow-wave resonator, which consists of the MEMS capacitive switch, the MEMS capacitor and the short metal line. The proposed filter has four different work states by changing the capacitance values of the MEMS switches. Measured results demonstrate that, for all four states, the insertion loss is 2.81, 3.27, 3.65 and 4.03 dB at 24.36, 23.2, 22.24 and 21.69 GHz, respectively. The actuation voltage is 0, 20, 16 and 26 V, respectively. The 3 dB bandwidth of the tunable filter is 5.4%, 6.2%, 5.7% and 5.9%, respectively. This study contributes to the design of miniature millimeter tunable filters with a wide-frequency tunable range.
- Open Access
- 17 August 2016
- Published by MDPI AG in Micromachines
- Vol. 7 (8) , 144
Design, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches
This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS) switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0°) at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.
- 17 August 2016
- Published by MDPI AG in Micromachines
- Vol. 7 (8) , 144
Open AccessDesign, Analysis, and Verification of Ka-Band Pattern Reconfigurable Patch Antenna Using RF MEMS Switches
This paper proposes a radiating pattern reconfigurable antenna by employing RF Micro-electromechanical Systems (RF MEMS) switches. The antenna has a low profile and small size of 4 mm × 5 mm × 0.4 mm, and mainly consists of one main patch, two assistant patches, and two RF MEMS switches. By changing the RF MEMS switches operating modes, the proposed antenna can switch among three radiating patterns (with main lobe directions of approximately −17.0°, 0° and +17.0°) at 35 GHz. The far-field vector addition model is applied to analyse the pattern. Comparing the measured results with analytical and simulated results, good agreements are obtained.
- Open Access
- 1 January 2016
- Published by The Electromagnetics Academy in Progress In Electromagnetics Research M
- Vol. 48, 125-132
PARAMETERS CALCULATION OF ASYMMETRICAL CPW-DGS
In this paper, an analytical method of capacitance and characteristic impedance is proposed, which is for asymmetrical coplanar waveguide with defected ground structure (ACPW-DGS). The capacitance equivalent model of ACPW-DGS is established. Using conformal mapping method and first category of incomplete elliptic integrals F (ϕ, k), the closed-form expressions of capacitance and characteristic impedance are obtained for the first time. Computed results match the simulated ones well.
- 1 January 2016
- Published by The Electromagnetics Academy in Progress In Electromagnetics Research M
- Vol. 48, 125-132
Open AccessPARAMETERS CALCULATION OF ASYMMETRICAL CPW-DGS
In this paper, an analytical method of capacitance and characteristic impedance is proposed, which is for asymmetrical coplanar waveguide with defected ground structure (ACPW-DGS). The capacitance equivalent model of ACPW-DGS is established. Using conformal mapping method and first category of incomplete elliptic integrals F (ϕ, k), the closed-form expressions of capacitance and characteristic impedance are obtained for the first time. Computed results match the simulated ones well.